JPH0464174B2 - - Google Patents
Info
- Publication number
- JPH0464174B2 JPH0464174B2 JP59000603A JP60384A JPH0464174B2 JP H0464174 B2 JPH0464174 B2 JP H0464174B2 JP 59000603 A JP59000603 A JP 59000603A JP 60384 A JP60384 A JP 60384A JP H0464174 B2 JPH0464174 B2 JP H0464174B2
- Authority
- JP
- Japan
- Prior art keywords
- solution
- growth
- supersaturation
- degree
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000007791 liquid phase Substances 0.000 claims description 8
- 239000002904 solvent Substances 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 17
- 239000000758 substrate Substances 0.000 description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 239000007788 liquid Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 235000015067 sauces Nutrition 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000000155 melt Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02392—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
Description
【発明の詳細な説明】
〔技術分野〕
本発明は光半導体素子等に用いられる液相エピ
タキシヤル層の成長装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to an apparatus for growing a liquid phase epitaxial layer used for optical semiconductor devices and the like.
光半導体素子も実用化の段階となり、液相成長
の安定性すなわち均一性、再現性が強く要求され
てきた。
Optical semiconductor devices have also entered the stage of practical application, and stability, ie, uniformity and reproducibility of liquid phase growth has been strongly required.
従来、液相成長の均一性、再現性を向上させる
方法として、基板と類似のシードウエハースをカ
ーボンボート内に仕込み、基板とシードウエハー
スとの間に厚さの均一な溶液を形成する方法、す
なわちオーバーシード法が用いられていた。これ
により、溶液の過飽和度は適当な値になり、溶液
の厚さも均一になるので均一な成長層を再現よく
得ることが出来る。しかし、この方法ではカーボ
ンボートが複雑になり破損しやすく寿命が短いと
いう欠点、基板とシードウエハースの間の狭い隙
間に溶液を入れることの不安定性を有するという
欠点、及び基板とシードウエハースとの間隔を任
意に変更出来ない欠点を持つている。又、過剰の
ソースウエハースを投入し溶液の上にシードウエ
ハースが乗つた状態を作り出し、過飽和度を制御
しようという方法もあるが、シードウエハースが
溶液の上で片寄つたり、傾いたために溶液厚が不
均一になったりし、均一な成長層が得られない。 Conventionally, as a method to improve the uniformity and reproducibility of liquid phase growth, a seed wafer similar to the substrate is placed in a carbon boat, and a solution with a uniform thickness is formed between the substrate and the seed wafer. An overseeding method was used. As a result, the degree of supersaturation of the solution becomes an appropriate value and the thickness of the solution becomes uniform, so that a uniform growth layer can be obtained with good reproducibility. However, this method has the drawbacks that the carbon boat is complicated, easily damaged, and has a short lifespan, instability due to introducing the solution into the narrow gap between the substrate and the seed wafer, and the distance between the substrate and the seed wafer. It has the disadvantage that it cannot be changed arbitrarily. Another method is to control the degree of supersaturation by adding an excess of source wafers to create a state where the seed wafers are on top of the solution, but this may cause the seed wafers to be lopsided or tilted on top of the solution, resulting in a decrease in the thickness of the solution. The growth layer may become non-uniform and a uniform growth layer cannot be obtained.
本発明の目的は、単純な構造で、均一性、再現
性のよい液相エピタキシヤル成長の出来る装置を
提供することにある。
An object of the present invention is to provide an apparatus that has a simple structure and can perform liquid phase epitaxial growth with good uniformity and reproducibility.
本発明は、溶媒を入れる溶液溜にはめ合の蓋を
つけ、その蓋の下部に溶液溜と同等に近い面積を
有するソースウエハースを取り付け、かつソース
ウエハースが溶液に全面的に接触する構造を有す
ることを特徴とする。
The present invention has a structure in which a fitting lid is attached to a solution reservoir containing a solvent, a source wafer having an area close to that of the solution reservoir is attached to the bottom of the lid, and the source wafer is in full contact with the solution. It is characterized by
液相成長において、溶媒中の溶質の飽和状態は
最も重要な要素の一つである。一般に高温に保持
している場合、ぼほ飽和に近い状態が保たれてお
り、降温を始めることにより過飽和状態になり、
過飽和状態で基板を接触させることにより成長が
開始する。この時、過飽和度が低い状態の場合は
成長速度が小さく薄い層の成長がやりやすく、過
飽和度が高い状態の場合は成長速度が大きく厚い
層の成長がやりやすいという特徴がある。又、基
板に設した加工形状の変形は過飽和度が高い程起
りにくい。 In liquid phase growth, the saturation state of the solute in the solvent is one of the most important factors. Generally, when kept at a high temperature, a state close to saturation is maintained, and when the temperature starts to decrease, it becomes supersaturated,
Growth is initiated by contacting the substrate in a supersaturated state. At this time, when the degree of supersaturation is low, the growth rate is low and it is easy to grow a thin layer, and when the degree of supersaturation is high, the growth rate is high and it is easy to grow a thick layer. Further, the higher the degree of supersaturation, the less likely deformation of the processed shape provided on the substrate occurs.
次に図面を用いて本発明の実施例を詳細に説明
する。実施例としては溝を堀つたIoＰ基板上に溝
を埋め込んだ形のダブルヘテロ構造のエピタキシ
ヤル層を液相で連続成長する場合について述べ
る。
Next, embodiments of the present invention will be described in detail using the drawings. As an example, a case will be described in which an epitaxial layer of a double heterostructure with grooves buried therein is continuously grown in a liquid phase on an I o P substrate with grooves dug therein.
すなわち、第１図に示すように、カーボンのス
ライダー板１の所定位置にあらかじめ処理された
IoＰ基板２を置きカーボンの浴槽板３を載せる。
あらかじめ秤量したIo４等のソースを所定の浴槽
５に投入する。次に浴槽５とはめ合いになつてい
るカーボンの蓋６の下部にIoＰのシードウエハー
ス７を挿入し、これらを各槽のIoソース４上に落
し込む。この状態で炉の内に入れ、温度を上げて
ゆくと、第２図のように、Ioソース４は溶解して
それぞれに仕込んだソースの量で決まる液厚とな
る。その状態で一定温度に保持しておくことによ
りIoＰのシードウエハース７が一部Ioソース４に
溶け込む。これにより溶媒Ioに対し溶質Ｐはほぼ
飽和の状態になる。 That is, as shown in FIG.
Place the I o P board 2 and place the carbon bathtub board 3 on it.
A pre-weighed sauce such as I o 4 is poured into a predetermined bathtub 5 . Next, I o P seed wafers 7 are inserted into the lower part of the carbon lid 6 that fits into the bathtub 5, and these are dropped onto the I o source 4 of each bath. In this state, when placed in a furnace and the temperature is raised, the I o sauce 4 melts and becomes a liquid with a thickness determined by the amount of sauce charged in each, as shown in Figure 2. By keeping the temperature constant in this state, a portion of the I o P seed wafer 7 melts into the I o source 4 . As a result, the solute P becomes almost saturated with respect to the solvent Io .
第２図に示した第１浴の溶液８の液厚は３mm、
第２浴の溶液９の液厚は２mmとなり、それぞれ溶
け残つたシードウエハース７を載せた状態で均一
な厚さを保つている。この状態で、炉の温度を
0.5℃／分の一定速度で降下させる。Io溶液８，
９中のＰは飽和点を通り越し過飽和状態となる。
Io溶液８，９中で過飽和状態となつたＰはシード
ウエハース７に析出を始める。このため、シード
ウエハース７の近くでの過飽和度は非常に小さな
値となり、シードウエハース７から離れる程Io溶
液８，９中の過飽和度は大きくなり、スライダー
１表面で最大となる。この過飽和度はIo溶液８，
９中における濃度勾配によるＰの輸送で決まり、
温度の降下速度及びIo溶液８，９の液厚で決ま
る。温度の降下速度を一定とすると各浴槽のIo溶
液８，９におけるスライダー１の表面での過飽和
度はIo溶液８，９の液厚で決まる。シードウエハ
ース７と反対側の液面での過飽和度は液厚の２乗
比例する。従つて第１浴槽のIo溶液８の過飽和度
は第２浴槽のIo溶液９の過飽和度の2.25位とな
る。 The thickness of the solution 8 in the first bath shown in Fig. 2 is 3 mm.
The liquid thickness of the solution 9 in the second bath is 2 mm, and the thickness is maintained uniform with the undissolved seed wafers 7 placed thereon. In this state, the temperature of the furnace is
Decrease at a constant rate of 0.5°C/min. I o solution 8,
P in 9 passes the saturation point and becomes supersaturated.
P, which has become supersaturated in the I o solutions 8 and 9, begins to precipitate on the seed wafer 7. Therefore, the degree of supersaturation near the seed wafer 7 becomes a very small value, and the further away from the seed wafer 7 the more the degree of supersaturation in the I o solutions 8 and 9 increases, reaching a maximum on the surface of the slider 1. This supersaturation is I o solution 8,
Determined by the transport of P due to the concentration gradient in 9,
It is determined by the rate of temperature drop and the thickness of the Io solutions 8 and 9. Assuming that the rate of temperature drop is constant, the degree of supersaturation on the surface of the slider 1 in the I o solutions 8 and 9 of each bathtub is determined by the thickness of the I o solutions 8 and 9. The degree of supersaturation at the liquid surface on the side opposite to the seed wafer 7 is proportional to the square of the liquid thickness. Therefore, the degree of supersaturation of the I o solution 8 in the first bath is 2.25th of the degree of supersaturation of the I o solution 9 in the second bath.
すなわち、第１層の成長では基板に設けた溝形
状を保存する成長が出来、第２層の成長では薄い
活性層の層厚の制御をする成長が出来る。第３層
以後の説明は略すが、それぞれの目的に合わせた
In溶液の厚みを秤量におけるIoの量で調整出来
る。 That is, the growth of the first layer allows growth that preserves the groove shape provided in the substrate, and the growth of the second layer allows growth that controls the thickness of the thin active layer. I will omit the explanation of the third layer onwards, but it is necessary to
The thickness of the In solution can be adjusted by adjusting the amount of Io in the weighing.
このようにして、各Io溶液８，９のスライダー
１の表面における過飽和度を調整し定常状態にし
た所で、スライダー１を所定のプログラムに沿つ
て動かして基板２をそれぞれの浴槽の下に所定の
時間保持する。この結果、基板２上に多層エピタ
キシヤル層が成長される。 In this way, the degree of supersaturation of each I O solution 8, 9 on the surface of the slider 1 is adjusted and brought to a steady state, and then the slider 1 is moved according to a predetermined program to place the substrate 2 under each bath. Hold for a predetermined time. As a result, a multilayer epitaxial layer is grown on the substrate 2.
以上のように、Io溶液の過飽和度を任意の値に
調整することにより、それぞれの層を成長する場
合の最良の条件が得られ、液相成長の再現性を向
上させることが出来る。 As described above, by adjusting the degree of supersaturation of the I 2 O solution to an arbitrary value, the best conditions for growing each layer can be obtained, and the reproducibility of liquid phase growth can be improved.
この実施例ではIo溶液を用いたIoＰ／InGaAsP
系の成長について述べたが、Ga溶液を用いた
GaAs／ＡGaAs系の成長に関しても同様の効
果が得られることは明らかである。 In this example, I o P/InGaAsP using I o solution
We have described the growth of the system, but using G a solution
It is clear that similar effects can be obtained with respect to the growth of GaAs/AGaAs systems.
第１図および第２図は本発明の一実施例を示す
図で、特に第１図は室温においてソースを投入し
た所の図、第２図は温度を上げてIoが溶解した所
の図である。
１……カーボンスライダー板、２……IoＰ基
板、３……浴槽板、４……Ioソース、５……浴
槽、６……蓋、７……シードウエハース、８……
第１層Io溶液、９……第２層Io溶液。
Figures 1 and 2 are diagrams showing an embodiment of the present invention. In particular, Figure 1 is a diagram where sauce is added at room temperature, and Figure 2 is a diagram where Io is dissolved by increasing the temperature. It is. DESCRIPTION OF SYMBOLS 1... Carbon slider plate, 2... IoP substrate, 3... Bathtub board, 4... Io source, 5... Bathtub, 6... Lid, 7... Seed wafer, 8...
First layer Io solution, 9...Second layer Io solution.
Claims (1)
成された溶媒の溶液溜に、該側面にはめ合いにな
つている蓋を設け、該蓋の下部に該溶液溜と同等
に近い面積のシードウエハースを取付け、該シー
ドウエハースを下部に取付けた該蓋を該シードウ
エハースを下にして該溶液溜にはめ合せて落し込
むようにしたことを特徴とする液相成長装置。1. A solvent solution reservoir formed by a linear side surface from the bottom surface to the top surface is provided with a lid that fits on the side surface, and a seed wafer with an area close to the same as that of the solution reservoir is placed below the lid. A liquid phase growth apparatus characterized in that the lid, with the seed wafer attached at the bottom thereof, is fitted into the solution reservoir with the seed wafer facing down and dropped into the solution reservoir.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60384A JPS60144933A (en) | 1984-01-06 | 1984-01-06 | Liquid phase growth apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60384A JPS60144933A (en) | 1984-01-06 | 1984-01-06 | Liquid phase growth apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60144933A JPS60144933A (en) | 1985-07-31 |
| JPH0464174B2 true JPH0464174B2 (en) | 1992-10-14 |
Family
ID=11478305
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60384A Granted JPS60144933A (en) | 1984-01-06 | 1984-01-06 | Liquid phase growth apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60144933A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4840806A (en) * | 1971-09-21 | 1973-06-15 |
-
1984
- 1984-01-06 JP JP60384A patent/JPS60144933A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4840806A (en) * | 1971-09-21 | 1973-06-15 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60144933A (en) | 1985-07-31 |
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