JPS61291488A - Method growing liquid-phase epitaxial growth and device therefor - Google Patents

Abstract

PURPOSE:To prevent obstacles caused by intake of a growing material solution during sliding of a base, by setting another second through hole between plural first through holes of a solution reservoir having the first through holes to store the growing mate rial solution and laying a semiconductor substrate having improved contacting proper ties with the growing material solution in the second hole. CONSTITUTION:Liquid-phase epitaxial growth is carried out by using both the freely sliding base 1 provided with the semiconductor substrate setting part 2 and the solution reservoir 4 having plural first through holes to store the growing material solution of semiconductor layer to be grown on the semiconductor substrate 3. Another second through hole is set between the first through holes of the solution reservoir 4. Then, the semiconductor substrates 7b-7f having improved contacting properties with the growing material solution are laid in the second through holes. When the base 1 is slid, the growth is carried out while retaining the brought growing material solution in the second through hole (e.g., bottom of the substrate 7c). The brought growing solution is taken in the space the base 1 and it by surface tension between the substrate 7c. Thus, variation of composition of the growing material solution is prevented to give a high-quality growth layer.

Description

DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a liquid phase epitaxial growth method used in the production of compound semiconductor devices such as semiconductor lasers, and an apparatus therefor.〇 (Prior Art) Conventionally, semiconductor lasers The liquid phase epitaxial growth process used in the production of compound semiconductor devices is generally called the parallel sliding method, and uses tate made of carbon material. Conventional liquid phase epitaxial growth method,
Particularly regarding the growth of InP/InGaAsP system, the fourth
This will be explained based on the figure and FIG. In Figure 4,
11 is a base, 12 is a board installation part, 13 is an InP board, 1
4 is a solution reservoir, 15a to 15e are growth material solutions, 1
6a to 16f are lids, and 17 is an InP cover.

The InP cover 17 is for preventing evaporation of P atoms from the InP substrate 13 at high temperatures. Also, the lid 16a
to 16f are also for preventing evaporation of V group such as P and As from the growth material solutions 15a to 15e. In the carbon hoard having such a configuration, first, the temperature is raised to a temperature higher than the saturation temperature of each of the growth material solutions 15a to 15e and maintained for a certain period of time to uniformly dissolve the growth material solutions.

After that, the temperature is lowered at a constant rate, and the base 11 is slid at a predetermined growth start temperature, and the InP substrate 1
2 is moved directly below the growth material solution 15a. At this point, the first layer is grown by maintaining the predetermined time.

Subsequently, the InP substrate 12 is grown using a material solution 15 b +
15 c... by moving it under the second layer,
Grow the third layer...

Reference: Latest Compound Semiconductor Handbook, Supervised by Toshiaki Ikoma, Science Forum 2.98 Figure-4゜ (Problem to be Solved by the Invention) In the above configuration, when the base 11 is slid, the growth This often causes a so-called carry IJ-over in which a portion of the growth material solution is drawn into the next growth material solution, causing fluctuations in the growth material solution composition. That is, as shown in FIG. 5, for example, Ir! P board 1
3 from the growth material solution 15c to 15d, if the relationship between the depth of the substrate installation part 12 and the thickness of the InP substrate 13 is not appropriate, or if the growth material solutions 15c and 15a
If there is a scratch on the lower part of the partition wall, add growth material solution 15c.
is drawn in. In particular, scratches on the lower part of the partition wall are often caused by edge growth of the substrate, and as the scratches become larger, the number of scratches increases.

An object of the present invention is to provide a liquid phase epitaxial growth method and apparatus for eliminating the conventional drawbacks, preventing fluctuations in the composition of the growth material solution due to the drawing of the growth material solution, and obtaining a grown layer with a uniform composition and film thickness. It is to provide.

(Means for Solving the Problems) The liquid phase epitaxial growth method and apparatus of the present invention includes a slidable base provided with a semiconductor substrate installation portion, and a material solution for growing a semiconductor layer on the semiconductor substrate. A solution reservoir having a plurality of through holes for accommodating the solution reservoir is used, another through hole is provided between each through hole of the solution reservoir, and a semiconductor substrate having good contact with the growth material solution is provided in each of the through holes. This is done by setting up a

Further, an appropriate space is provided between the semiconductor substrate placed in another through hole and the base.

(Function) The present invention provides another through-hole between each through-hole that accommodates the growth material solution, and provides an appropriate space between the through-hole and the base so that the growth material solution can come in contact with the through-hole. By setting up a good semiconductor substrate, when the growth material solution is drawn in when the base slides, the growth material solution drawn into the appropriate space can be drawn in by the semiconductor substrate that has good contact with the growth material solution. This is to prevent contamination with the next growth material solution.

(Example) An example of the present invention will be described based on FIGS. 1 to 3. FIG. 1 shows a car used for growing InP/InGaAs based on the liquid phase epitaxial growth method of the present invention. FIG. In the figure, 1 is a base, 2 is a substrate installation part, 3 is an InP substrate, 4 is a solution reservoir, 5a to 5e are growth material solutions, 6a to 6 are lids, and 7a to 7f are PoLi InP substrates. . PoLi I
The np substrate 7a is used to prevent evaporation of P atoms from the InP substrate 3, and 7b to 7f are used to prevent the drawn-in growth material solution from being mixed into the next solution when the growth material solution is drawn in. This is to prevent this.

Phthalos a to 6 contain P and A from the growth material solution.
This is to prevent evaporation of s atoms or evaporation of phosphorus atoms from the PoLi engineered np substrates 7a to 7f.

A car configured like this? hmm? For example, if the InP substrate 3 is moved from the growth material solution 5b to the growth material solution 5C, the growth material solution is drawn in, as shown in FIG. , the drawn-in growth material solution comes into contact with the PoLiInp substrate 7c. When the slide continues, as shown in FIG.
It is drawn into the space between the base 1 and the base 1 due to the surface tension between the base 1 and the base 1.

Here, even if there is a large amount of withdrawal, PoLi
If a space is provided between the InP substrate 7C and the phthalo e, the PoLi Inp substrate 7C can be lifted up and taken in entirely.

In general, in conventional cargin bonding, the thickness of the partition wall between the growth material solutions is adjusted to avoid thermal damage when the InP substrate or the surface of the growth layer is directly exposed to the growth atmosphere (generally H2 atmosphere) during sliding. However, in this embodiment, there is an advantage that the PoLi InP substrates 7a to 7f are saturated with P vapor and protected.

With the above configuration, a composition is formed on the InP substrate 3.

A good InP, InP, or InGaAsP layer with uniform thickness can be grown.

In the case of the InP/InGaAsP system as in this example, a PoLi InP substrate was used as the substrate installed in the through hole between the growth material solutions.
A similar effect can be obtained with an aA+s substrate.

Furthermore, in the growth of other systems such as the GaAs/GaAtAs system, similar effects can be obtained by using a substrate that has good contact with the growth material solution.

(Effects of the Invention) According to the present invention, another second through hole is provided between each of the first through holes that accommodate the growth material solution, and the second through hole has contact with the growth material solution. By installing a good semiconductor substrate with an appropriate space between it and the base, when sliding, the growth material is drawn into the space of the second through hole and the primary growth material is drawn in. It has the effect of preventing mixing into the solution and preventing fluctuations in the composition of the growth material solution, and also provides a uniform growth layer, so it is highly effective in improving yields in the production of compound semiconductor devices such as semiconductor lasers. It is.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional view of a carbon hoard used for liquid phase epitaxial growth in one embodiment of the present invention, and FIGS. 2 and 3 are explanatory diagrams of the phenomenon that occurs during the process of sliding the base when the carbon hoard is at one time. , FIG. 4 is a cross-sectional view of a carbon sheet used in conventional liquid phase epitaxial growth, and FIG. 5 is an explanatory diagram of a phenomenon that occurs in the process of base sliding in the carbon sheet. 1.11...Base, 2.12...Substrate installation part, 3゜13...InP substrate, 4,14...Solution reservoir, 5a to 5e*15a to 15e...Growth material solution, 6m to 6, 16a to 16f...lid, 7a to 7f - PoLiInP substrate, 17-
InP cover. Figure 1 Figure 2 Figure 3 Figure 4

Claims (4)

[Claims] (1) A slidable base provided with a semiconductor substrate installation part, and a plurality of first through holes for storing a growth material solution for a semiconductor layer to be grown on the semiconductor substrate installed in the semiconductor substrate installation part. In a liquid phase epitaxial growth method using a solution reservoir, another second through hole is provided between each of the first through holes of the solution reservoir, and the second through hole has a contact property with the growth material solution. A liquid phase epitaxial growth method, characterized in that a semiconductor substrate with a good temperature is installed, and the growth material solution drawn in when the base is slid is retained in a second through hole. (2) A suitable space is created between the outer peripheral surface of the semiconductor substrate installed in another through hole and the inner surface of the second through hole of the base. The liquid phase epitaxial growth method described in section 1). (3) A slidable base provided with a semiconductor substrate installation part, and a plurality of first through holes for storing a material solution for growing a semiconductor layer to be grown on the semiconductor substrate installed in the semiconductor substrate installation part. In a liquid phase epitaxial growth apparatus, a second through hole is provided between each of the first through holes, and the second through hole is in contact with the growth material solution. 1. A liquid phase epitaxial growth apparatus, characterized in that a semiconductor substrate having good properties is installed such that there is some space between the lower surface of the semiconductor substrate and the contact surface of the base with the solution reservoir. (4) Claim (3) characterized in that the semiconductor substrate within the second through hole is freely slidable up and down.
The liquid phase epitaxial growth apparatus described in Section 1.