JPS60144933A - 液相成長装置 - Google Patents

液相成長装置

Info

Publication number
JPS60144933A
JPS60144933A JP59000603A JP60384A JPS60144933A JP S60144933 A JPS60144933 A JP S60144933A JP 59000603 A JP59000603 A JP 59000603A JP 60384 A JP60384 A JP 60384A JP S60144933 A JPS60144933 A JP S60144933A
Authority
JP
Japan
Prior art keywords
solution
liquid phase
supersaturation
degree
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59000603A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0464174B2 (enExample
Inventor
Yasuo Shinohara
篠原　庸雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP59000603A priority Critical patent/JPS60144933A/ja
Publication of JPS60144933A publication Critical patent/JPS60144933A/ja
Publication of JPH0464174B2 publication Critical patent/JPH0464174B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2909—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
JP59000603A 1984-01-06 1984-01-06 液相成長装置 Granted JPS60144933A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59000603A JPS60144933A (ja) 1984-01-06 1984-01-06 液相成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59000603A JPS60144933A (ja) 1984-01-06 1984-01-06 液相成長装置

Publications (2)

Publication Number Publication Date
JPS60144933A true JPS60144933A (ja) 1985-07-31
JPH0464174B2 JPH0464174B2 (enExample) 1992-10-14

Family

ID=11478305

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59000603A Granted JPS60144933A (ja) 1984-01-06 1984-01-06 液相成長装置

Country Status (1)

Country Link
JP (1) JPS60144933A (enExample)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4840806A (enExample) * 1971-09-21 1973-06-15

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4840806A (enExample) * 1971-09-21 1973-06-15

Also Published As

Publication number Publication date
JPH0464174B2 (enExample) 1992-10-14

Similar Documents

Publication Publication Date Title
US4689109A (en) String stabilized ribbon growth a method for seeding same
JPS6482615A (en) Manufacture of semiconductor element
JPS60144933A (ja) 液相成長装置
US3879235A (en) Method of growing from solution materials exhibiting a peltier effect at the solid-melt interface
JPH0217519B2 (enExample)
JPS57183091A (en) Manufacture of optical integrated circuit
JP2932787B2 (ja) 化合物半導体ウェハの製造方法
van Oirschot et al. LPE growth of DH laser structures with the double source method
JPS61181124A (ja) 液相成長方法
JPS5742598A (en) Liquid-phase epitaxial growing method
JPS6153192A (ja) 液相エピタキシヤル成長方法
Kanai et al. LPE growth of GaAs by yo-yo solute feeding method
JPS59225518A (ja) 液相エピタキシヤル成長方法
JPS6131390A (ja) ＧａＡｓ液相エピタキシヤル成長法
JPS60192339A (ja) 液相エピタキシヤル成長方法
JPS63207119A (ja) 気相成長方法
JPS60134417A (ja) 液相成長法
JPS63164309A (ja) 液相成長方法
JPH01246193A (ja) 液相エピタキシャル成長装置
JPS57155727A (en) Manufacture of semiconductor device
JPS5749227A (en) Liquid phase epitaxially growing method
JPS6286884A (ja) 半導体装置の製造方法
JPS57181186A (en) Semiconductor light emission device
JPS6398122A (ja) 液相エピタキシヤル成長方法
JPS6129122A (ja) ＧａＡｓ液相エピタキシヤル成長法