JPH0463839B2 - - Google Patents
Info
- Publication number
- JPH0463839B2 JPH0463839B2 JP61044077A JP4407786A JPH0463839B2 JP H0463839 B2 JPH0463839 B2 JP H0463839B2 JP 61044077 A JP61044077 A JP 61044077A JP 4407786 A JP4407786 A JP 4407786A JP H0463839 B2 JPH0463839 B2 JP H0463839B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- value
- less
- semiconductor silicon
- silicon wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4407786A JPS62202900A (ja) | 1986-03-03 | 1986-03-03 | 半導体シリコンウエハ及びその製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4407786A JPS62202900A (ja) | 1986-03-03 | 1986-03-03 | 半導体シリコンウエハ及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62202900A JPS62202900A (ja) | 1987-09-07 |
JPH0463839B2 true JPH0463839B2 (enrdf_load_stackoverflow) | 1992-10-13 |
Family
ID=12681560
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4407786A Granted JPS62202900A (ja) | 1986-03-03 | 1986-03-03 | 半導体シリコンウエハ及びその製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62202900A (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02263793A (ja) * | 1989-04-05 | 1990-10-26 | Nippon Steel Corp | 酸化誘起積層欠陥の発生し難いシリコン単結晶及びその製造方法 |
JPH0729878B2 (ja) * | 1990-06-07 | 1995-04-05 | 三菱マテリアル株式会社 | シリコンウエーハ |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56104799A (en) * | 1980-01-22 | 1981-08-20 | Nec Corp | Production of si single crystal and device therefor |
JPS58197716A (ja) * | 1982-05-13 | 1983-11-17 | Fujitsu Ltd | シリコンウエハ− |
JPS6097619A (ja) * | 1983-11-02 | 1985-05-31 | Hitachi Ltd | 半導体製造方法 |
JPS60191095A (ja) * | 1984-03-07 | 1985-09-28 | Toshiba Corp | シリコン単結晶体の製造方法及びその装置 |
-
1986
- 1986-03-03 JP JP4407786A patent/JPS62202900A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS62202900A (ja) | 1987-09-07 |
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