JPH0463839B2 - - Google Patents

Info

Publication number
JPH0463839B2
JPH0463839B2 JP61044077A JP4407786A JPH0463839B2 JP H0463839 B2 JPH0463839 B2 JP H0463839B2 JP 61044077 A JP61044077 A JP 61044077A JP 4407786 A JP4407786 A JP 4407786A JP H0463839 B2 JPH0463839 B2 JP H0463839B2
Authority
JP
Japan
Prior art keywords
wafer
value
less
semiconductor silicon
silicon wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61044077A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62202900A (ja
Inventor
Yoshiaki Matsushita
Atsuko Kubota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP4407786A priority Critical patent/JPS62202900A/ja
Publication of JPS62202900A publication Critical patent/JPS62202900A/ja
Publication of JPH0463839B2 publication Critical patent/JPH0463839B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP4407786A 1986-03-03 1986-03-03 半導体シリコンウエハ及びその製造方法 Granted JPS62202900A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4407786A JPS62202900A (ja) 1986-03-03 1986-03-03 半導体シリコンウエハ及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4407786A JPS62202900A (ja) 1986-03-03 1986-03-03 半導体シリコンウエハ及びその製造方法

Publications (2)

Publication Number Publication Date
JPS62202900A JPS62202900A (ja) 1987-09-07
JPH0463839B2 true JPH0463839B2 (enrdf_load_stackoverflow) 1992-10-13

Family

ID=12681560

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4407786A Granted JPS62202900A (ja) 1986-03-03 1986-03-03 半導体シリコンウエハ及びその製造方法

Country Status (1)

Country Link
JP (1) JPS62202900A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02263793A (ja) * 1989-04-05 1990-10-26 Nippon Steel Corp 酸化誘起積層欠陥の発生し難いシリコン単結晶及びその製造方法
JPH0729878B2 (ja) * 1990-06-07 1995-04-05 三菱マテリアル株式会社 シリコンウエーハ

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56104799A (en) * 1980-01-22 1981-08-20 Nec Corp Production of si single crystal and device therefor
JPS58197716A (ja) * 1982-05-13 1983-11-17 Fujitsu Ltd シリコンウエハ−
JPS6097619A (ja) * 1983-11-02 1985-05-31 Hitachi Ltd 半導体製造方法
JPS60191095A (ja) * 1984-03-07 1985-09-28 Toshiba Corp シリコン単結晶体の製造方法及びその装置

Also Published As

Publication number Publication date
JPS62202900A (ja) 1987-09-07

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