JPS62202900A - 半導体シリコンウエハ及びその製造方法 - Google Patents
半導体シリコンウエハ及びその製造方法Info
- Publication number
- JPS62202900A JPS62202900A JP4407786A JP4407786A JPS62202900A JP S62202900 A JPS62202900 A JP S62202900A JP 4407786 A JP4407786 A JP 4407786A JP 4407786 A JP4407786 A JP 4407786A JP S62202900 A JPS62202900 A JP S62202900A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- semiconductor silicon
- silicon wafer
- less
- value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 32
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 32
- 239000010703 silicon Substances 0.000 title claims abstract description 32
- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000000034 method Methods 0.000 claims abstract description 38
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 27
- 239000001301 oxygen Substances 0.000 claims abstract description 27
- 238000010521 absorption reaction Methods 0.000 claims abstract description 18
- 239000013078 crystal Substances 0.000 claims abstract description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000010583 slow cooling Methods 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 22
- 239000000758 substrate Substances 0.000 abstract description 4
- 238000000137 annealing Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 46
- 230000014759 maintenance of location Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 150000002926 oxygen Chemical class 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000004793 poor memory Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4407786A JPS62202900A (ja) | 1986-03-03 | 1986-03-03 | 半導体シリコンウエハ及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4407786A JPS62202900A (ja) | 1986-03-03 | 1986-03-03 | 半導体シリコンウエハ及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62202900A true JPS62202900A (ja) | 1987-09-07 |
| JPH0463839B2 JPH0463839B2 (enrdf_load_stackoverflow) | 1992-10-13 |
Family
ID=12681560
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4407786A Granted JPS62202900A (ja) | 1986-03-03 | 1986-03-03 | 半導体シリコンウエハ及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62202900A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0442893A (ja) * | 1990-06-07 | 1992-02-13 | Mitsubishi Materials Corp | シリコンウエーハ |
| US5373804A (en) * | 1989-04-05 | 1994-12-20 | Nippon Steel Corporation | Single silicon crystal having low OSF density induced by oxidation and method for production thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56104799A (en) * | 1980-01-22 | 1981-08-20 | Nec Corp | Production of si single crystal and device therefor |
| JPS58197716A (ja) * | 1982-05-13 | 1983-11-17 | Fujitsu Ltd | シリコンウエハ− |
| JPS6097619A (ja) * | 1983-11-02 | 1985-05-31 | Hitachi Ltd | 半導体製造方法 |
| JPS60191095A (ja) * | 1984-03-07 | 1985-09-28 | Toshiba Corp | シリコン単結晶体の製造方法及びその装置 |
-
1986
- 1986-03-03 JP JP4407786A patent/JPS62202900A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56104799A (en) * | 1980-01-22 | 1981-08-20 | Nec Corp | Production of si single crystal and device therefor |
| JPS58197716A (ja) * | 1982-05-13 | 1983-11-17 | Fujitsu Ltd | シリコンウエハ− |
| JPS6097619A (ja) * | 1983-11-02 | 1985-05-31 | Hitachi Ltd | 半導体製造方法 |
| JPS60191095A (ja) * | 1984-03-07 | 1985-09-28 | Toshiba Corp | シリコン単結晶体の製造方法及びその装置 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5373804A (en) * | 1989-04-05 | 1994-12-20 | Nippon Steel Corporation | Single silicon crystal having low OSF density induced by oxidation and method for production thereof |
| JPH0442893A (ja) * | 1990-06-07 | 1992-02-13 | Mitsubishi Materials Corp | シリコンウエーハ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0463839B2 (enrdf_load_stackoverflow) | 1992-10-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0503816B1 (en) | Heat treatment of Si single crystal | |
| US6413310B1 (en) | Method for producing silicon single crystal wafer and silicon single crystal wafer | |
| JP5993550B2 (ja) | シリコン単結晶ウェーハの製造方法 | |
| CN103003927A (zh) | 硅基板的制造方法及硅基板 | |
| US6365461B1 (en) | Method of manufacturing epitaxial wafer | |
| US6569237B2 (en) | Method of pulling up silicon single crystal and method of manufacturing epitaxial wafer | |
| US6337219B1 (en) | Method of producing silicon single and single crystal silicon wafer | |
| KR102661941B1 (ko) | 웨이퍼의 결함 영역의 평가 방법 | |
| JP2936916B2 (ja) | シリコン単結晶の品質評価方法 | |
| KR20050019845A (ko) | 에피텍셜 성장용 실리콘 웨이퍼 및 에피텍셜 웨이퍼 및 그제조방법 | |
| JP2003243404A (ja) | アニールウエーハの製造方法及びアニールウエーハ | |
| JPS62202900A (ja) | 半導体シリコンウエハ及びその製造方法 | |
| JP2002016071A (ja) | シリコンウェーハの製造方法及びその方法により製造されたシリコンウェーハ | |
| US20030008447A1 (en) | Method of producing epitaxial wafers | |
| JP4573282B2 (ja) | エピタキシャルシリコンウェーハの製造方法 | |
| JP4089137B2 (ja) | シリコン単結晶の製造方法およびエピタキシャルウェーハの製造方法 | |
| CN117219508A (zh) | 处理外延片的方法和装置以及检测外延片的方法 | |
| US6544332B1 (en) | Method for manufacturing silicon single crystal, silicon single crystal manufactured by the method, and silicon wafer | |
| JP5282762B2 (ja) | シリコン単結晶の製造方法 | |
| JPH0528900B2 (enrdf_load_stackoverflow) | ||
| JP4683171B2 (ja) | 半導体ウェーハの評価方法 | |
| JPS6097619A (ja) | 半導体製造方法 | |
| US6461447B1 (en) | Substrate for epitaxial growth | |
| JP3731553B2 (ja) | シリコンウェーハの窒素濃度の評価方法 | |
| WO2024009659A1 (ja) | シリコンウェーハ及びその製造方法 |