JPH0459946U - - Google Patents
Info
- Publication number
- JPH0459946U JPH0459946U JP10395690U JP10395690U JPH0459946U JP H0459946 U JPH0459946 U JP H0459946U JP 10395690 U JP10395690 U JP 10395690U JP 10395690 U JP10395690 U JP 10395690U JP H0459946 U JPH0459946 U JP H0459946U
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- wiring
- effect transistor
- channel field
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims description 2
- 230000005669 field effect Effects 0.000 claims 4
- 230000000295 complement effect Effects 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
第１図ａ，ｂは本考案の一実施例を示す平面図
及びＡ−Ａ′線断面図、第２図ａ，ｂは従来の半
導体装置の一例を示す平面図及びＢ−Ｂ′線断面
図である。
１……Ｐ型シリコン基板、２……Ｎ型ウエル、
３……ソース領域、４，５……ドレイン領域、６
……ソース領域、７……フイールド酸化膜、１０
……ゲート酸化膜、１２……ゲート電極、１４…
…層間絶縁膜、１７，１８，１９……配線、２３
，２５……コンタクトホール、３１……信号検出
用電極。
Figures 1a and b are a plan view and a cross-sectional view taken along the line A-A' showing an embodiment of the present invention, and Figures 2 a and b are a plan view and a cross-sectional view taken along the line B-B' showing an example of a conventional semiconductor device. It is a diagram. 1...P-type silicon substrate, 2...N-type well,
3... Source region, 4, 5... Drain region, 6
... Source region, 7 ... Field oxide film, 10
... Gate oxide film, 12 ... Gate electrode, 14 ...
...Interlayer insulating film, 17, 18, 19...Wiring, 23
, 25...Contact hole, 31...Signal detection electrode.
Claims (1)
る半導体装置において、Ｐチヤンネル型電界効果
トランジスタのドレイン領域とＮチヤンネル型電
界効果トランジスタのドレイン領域とを接続して
設けた配線と、前記配線を含む表面に設けた絶縁
膜と、前記絶縁膜に設けたコンタクトホールを介
して前記配線と接続して設けた前記Ｐチヤンネル
型及びＮチヤンネル型電界効果トランジスタのド
レイン信号を検出するための信号検出用電極を備
えたことを特徴とする半導体装置。 In a semiconductor device having a complementary insulated gate field effect transistor, a wiring provided to connect a drain region of a P-channel field effect transistor and a drain region of an N-channel field effect transistor, and a wiring provided on a surface including the wiring. comprising an insulating film and a signal detection electrode for detecting drain signals of the P-channel type and N-channel field effect transistors connected to the wiring through a contact hole provided in the insulating film; A semiconductor device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10395690U JPH0459946U (en) | 1990-10-01 | 1990-10-01 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10395690U JPH0459946U (en) | 1990-10-01 | 1990-10-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0459946U true JPH0459946U (en) | 1992-05-22 |
Family
ID=31849039
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10395690U Pending JPH0459946U (en) | 1990-10-01 | 1990-10-01 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0459946U (en) |
-
1990
- 1990-10-01 JP JP10395690U patent/JPH0459946U/ja active Pending
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