JPH04595B2 - - Google Patents

Info

Publication number
JPH04595B2
JPH04595B2 JP60166504A JP16650485A JPH04595B2 JP H04595 B2 JPH04595 B2 JP H04595B2 JP 60166504 A JP60166504 A JP 60166504A JP 16650485 A JP16650485 A JP 16650485A JP H04595 B2 JPH04595 B2 JP H04595B2
Authority
JP
Japan
Prior art keywords
oxide film
internal wiring
bonding
sputtering
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60166504A
Other languages
English (en)
Other versions
JPS6226834A (ja
Inventor
Shingo Ikeda
Shigeru Harada
Takeshi Noguchi
Reiji Tamaki
Mitsuyoshi Nakamura
Hiroshi Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP60166504A priority Critical patent/JPS6226834A/ja
Publication of JPS6226834A publication Critical patent/JPS6226834A/ja
Publication of JPH04595B2 publication Critical patent/JPH04595B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165—Reinforcing structures
    • H01L2224/02166—Collar structures
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01—Chemical elements
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    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は劣化防止を施こした半導体装置の製
造方法に関するものである。
〔従来の技術〕
第２図は従来の半導体装置を示す断面図であ
り、１は半導体チツプ、２は半導体チツプの素子
形成部分、３は素子形成部分２上に設けられた内
部配線であつて、こゝではアルミニウム配線、４
は素子形成部分２と内部配線３の上に形成され後
者を湿気等から守る保護用絶縁膜、４Ａは保護用
絶縁膜４のボンデイングのための開口部、３Ａは
内部配線３の一部で開口部４Ａの下にあるボンデ
イングパツド、５Ａはチツプ１を固定するリード
フレームのダイ部分、５Ｂは半導体装置のリード
となるリードフレームのリード部分、６は金属細
線であつて、こゝでは金線、７はパツケージであ
りこゝではプラスチツクパツケージのプラスチツ
ク充填部分、３Ｘは内部配線３のチツプ１の外部
に露出している露出部分である。
従来の半導体装置は上記の如く構成されていた
ので、内部配線の露出部分３Ｘはプラスチツク充
填部分７で保護され、短時間酸につかる程度では
劣化しないようになつていた。
〔発明が解決しようとする問題点〕
上記のような従来の半導体装置では、長時間を
かけてリード部分５Ｂとプラスチツク充填部分の
すき間から侵入して来る湿気等による劣化に露出
部分３Ｘは無力であり、導通不良を起すといつた
問題点があつた。
この発明はパツケージが湿気等の腐蝕の原因に
なるものの侵入を食い止められない場合でも、劣
化を生じない半導体装置の製造方法を提供するこ
とを目的としている。
〔問題点を解決するための手段〕
この発明に係る半導体装置の製造方法は、チツ
プの内部配線の一部であるボンデイングパツトに
金属細線をボンデイングする工程と、この工程に
続いて前記内部配線の露出部分を不活性元素を含
むガスでスパツタリングする工程とを有し、これ
に引き続いて前記内部配線の露出する表面層を酸
化するようにした方法である。
〔作用〕
この発明においては、ボンデイングする工程に
引き続いてスパツタリングする工程を入れた後
に、酸化する工程を施こすことにより、内部配線
の露出部分にその酸化被膜の成長する部分を限定
すると共に、その成長を容易にする。
〔実施例〕
第１図はこの発明の一実施例を示す断面図であ
り、８は内部配線３の金属等の材料の酸化膜、そ
の他の符号は第２図のものと同一のものである。
この酸化膜８はワイヤボンデイングの後にアルゴ
ンガスによるスパツタリングを第１図において露
出部分３Ｘに施こし、後に約80℃の温水に数分な
いし数10分間浸すことにより、露出部分３Ｘの表
面上に化学式にして、Al2O3・H2Oなる成分の絶
縁膜８として形成される。
この実施例は上記のようにして形成した絶縁膜
８が安定なため酸化膜８が長時間の内にパツケー
ジ内に侵入して来る湿気等による残りのボンデイ
ンパツド３Ａ等の内部配線３を腐触から保護する
ことは明らかである。
なお上記実施例ではアルゴンガスでスパツタリ
ングする例について述べたが他の不活性元素ガス
であつてもよく、さらにこれらのガスに他のガス
が含まれていてもよい。
また、上記実施例では約80℃の熱水で酸化する
場合について述べたがこれは最適条件であつてこ
れより低温でもまた高温でも同様の効果が期待で
きることは云うまでもない。
また、上記実施例は熱水で酸化する場合であつ
たが他の方法で酸化してもよく例えば過酸化水素
水に浸したり、陽極酸化したり、高温の水蒸気に
さらしたり、酸化性プラズマにさらしたりしても
よい。
また、上記実施例では内部配線の材料がアルミ
ニウムである場合について述べたが、その酸化膜
が安定な絶縁膜となるものなら他の材料でもよ
い。
したがつて、この発明によれば、内部配線の露
出部分に絶縁膜が形成されているので、長時間の
内にパツケージ内に浸入して来る湿気等から、パ
ツト部の内部配線を腐触から保護することがで
き、特に、金属細線をボンデイングした後に不活
性元素を含むガスでスパツタリングして、その後
に内部配線の表面を酸化するようにしているの
で、金属細線をボンデイングするとき、加熱され
ること等で内部配線の表面に生成される不均一な
自然酸化膜を除去してから、該部に酸化膜を形成
するようにでき、この形成される酸化膜は、均一
にかつ高い成長速度で形成され、外部からの湿気
等に対して極めて安定して内部配線の腐触を阻止
することができる。
【図面の簡単な説明】
第１図はこの発明の一実施例を示す断面図、第
２図は従来の半導体装置を示す断面図である。 図において、１はチツプ、３は内部配線、３Ａ
はボンデイングパツド、３Ｘは内部配線の露出部
分、６は金属細線、８は酸化膜である。なお、各
図中、同一符号は同一または相当部分を示す。

Claims (1)

  1. 【特許請求の範囲】 １ チツプの内部配線の一部であるボンデイング
    パツドに金属細線をボンデイングする工程と、 この工程に次いで、上記内部配線の露出する表
    面を不活性元素を含むガスでスパツタリングする
    工程と、 さらに、このスパツタリング工程に引き続いて
    上記内部配線の露出する表面を酸化する工程とを
    備えたことを特徴とする半導体装置の製造方法。
JP60166504A 1985-07-26 1985-07-26 半導体装置の製造方法 Granted JPS6226834A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60166504A JPS6226834A (ja) 1985-07-26 1985-07-26 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60166504A JPS6226834A (ja) 1985-07-26 1985-07-26 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6226834A JPS6226834A (ja) 1987-02-04
JPH04595B2 true JPH04595B2 (ja) 1992-01-08

Family

ID=15832581

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60166504A Granted JPS6226834A (ja) 1985-07-26 1985-07-26 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6226834A (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0529379A (ja) * 1991-07-25 1993-02-05 Mitsubishi Electric Corp 半導体装置およびそれの製造方法
JP4737116B2 (ja) * 2007-02-28 2011-07-27 株式会社日立製作所 接合方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5232263A (en) * 1975-09-05 1977-03-11 Hitachi Ltd Semiconductor manufacturing process
JPS53141574A (en) * 1977-05-16 1978-12-09 Nec Corp Manufacture of semiconductor device
JPS5480679A (en) * 1977-12-09 1979-06-27 Nec Corp Manufacture for semiconductor device
JPS56116634A (en) * 1980-02-20 1981-09-12 Hitachi Ltd Semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5232263A (en) * 1975-09-05 1977-03-11 Hitachi Ltd Semiconductor manufacturing process
JPS53141574A (en) * 1977-05-16 1978-12-09 Nec Corp Manufacture of semiconductor device
JPS5480679A (en) * 1977-12-09 1979-06-27 Nec Corp Manufacture for semiconductor device
JPS56116634A (en) * 1980-02-20 1981-09-12 Hitachi Ltd Semiconductor device

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