JPH0458957U - - Google Patents
Info
- Publication number
- JPH0458957U JPH0458957U JP10037590U JP10037590U JPH0458957U JP H0458957 U JPH0458957 U JP H0458957U JP 10037590 U JP10037590 U JP 10037590U JP 10037590 U JP10037590 U JP 10037590U JP H0458957 U JPH0458957 U JP H0458957U
- Authority
- JP
- Japan
- Prior art keywords
- ion
- scanning
- target
- mask
- upper base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005468 ion implantation Methods 0.000 claims description 4
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 4
- 238000001819 mass spectrum Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
Description
第１図は、この考案の一実施例に係るイオン注
入装置を示す図である。第２図は、第１図中のマ
スクおよびターゲツトを上流側から見た拡大図で
ある。第３図ＡないしＣは、それぞれ、ターゲツ
ト上でのＹ方向走査のビーム電流波形を示す図で
ある。第４図は、従来のイオン注入装置の一例を
示す図である。第５図は、マススペクトルの一例
を示す図である。
２……イオン源、４……イオンビーム、６……
分析電磁石、８……分析電磁石電源、１０，１４
……走査電極、１８……マスク、２０……ターゲ
ツト、３０……マスチユーニング補正装置、３２
……計測手段、３４……補正手段。
FIG. 1 is a diagram showing an ion implantation apparatus according to an embodiment of this invention. FIG. 2 is an enlarged view of the mask and target in FIG. 1 viewed from the upstream side. FIGS. 3A to 3C are diagrams showing beam current waveforms during Y-direction scanning on a target, respectively. FIG. 4 is a diagram showing an example of a conventional ion implantation apparatus. FIG. 5 is a diagram showing an example of a mass spectrum. 2...Ion source, 4...Ion beam, 6...
Analysis electromagnet, 8...Analysis electromagnet power supply, 10, 14
... Scanning electrode, 18 ... Mask, 20 ... Target, 30 ... Mass tuning correction device, 32
...Measuring means, 34...Correction means.
Claims (1)
析電磁石電源によつて励磁される分析電磁石でＸ
方向に偏向させて質量分析し、更に走査手段で前
記Ｘ方向およびそれと実質的に直交するＹ方向に
走査し、そしてマスクを通してターゲツトに入射
させるよう構成されたイオン注入装置において、
前記イオンビームのＸ方向の走査位置がターゲツ
ト中心を０として±ｘ（ｘは、０＜｜ｘ｜＜前記
マスクの穴の半径、を満たす任意の値）のときの
ターゲツト上でのＹ方向走査のビーム電流波形の
上底幅をそれぞれ計測する計測手段と、この±ｘ
のときの前記上底幅が互いに同じ値になるように
前記分析電磁石電源の出力電流を補正する補正手
段とを備えるマスチユーニング補正装置を設けた
ことを特徴とするイオン注入装置。 The ion beam extracted from the ion source is
In an ion implantation device configured to perform mass analysis by deflecting the ion in a direction, further scanning in the X direction and the Y direction substantially perpendicular thereto by a scanning means, and injecting the ion into the target through a mask,
Y-direction scanning on the target when the scanning position of the ion beam in the X-direction is ±x with the target center at 0 (x is an arbitrary value that satisfies 0<|x|<radius of the hole in the mask) A measuring means for measuring the upper base width of the beam current waveform of ±x
An ion implantation apparatus comprising: a mass tuning correction device comprising a correction means for correcting the output current of the analysis electromagnet power supply so that the upper base widths are the same value when .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10037590U JPH0458957U (en) | 1990-09-25 | 1990-09-25 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10037590U JPH0458957U (en) | 1990-09-25 | 1990-09-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0458957U true JPH0458957U (en) | 1992-05-20 |
Family
ID=31842980
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10037590U Pending JPH0458957U (en) | 1990-09-25 | 1990-09-25 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0458957U (en) |
-
1990
- 1990-09-25 JP JP10037590U patent/JPH0458957U/ja active Pending
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