JPH0385645U - - Google Patents
Info
- Publication number
- JPH0385645U JPH0385645U JP14699589U JP14699589U JPH0385645U JP H0385645 U JPH0385645 U JP H0385645U JP 14699589 U JP14699589 U JP 14699589U JP 14699589 U JP14699589 U JP 14699589U JP H0385645 U JPH0385645 U JP H0385645U
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- stage
- electron
- measuring machine
- coordinate measuring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010894 electron beam technology Methods 0.000 claims 7
- 238000005259 measurement Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
第１図は本考案の一実施例の構成図、第２図は
補正原理図、第３図は静電偏向板を使用した実施
例の構成図である。
３……偏向コイル、４……補正コイル、６……
試料、６ａ……パターン、７……ＸＹステージ、
９……レーザ干渉測定器、１３……二次電子検出
器、１４……倍率切換回路、１５……静電偏向板
。
FIG. 1 is a block diagram of an embodiment of the present invention, FIG. 2 is a diagram of the correction principle, and FIG. 3 is a block diagram of an embodiment using an electrostatic deflection plate. 3... Deflection coil, 4... Correction coil, 6...
Sample, 6a...pattern, 7...XY stage,
9... Laser interference measuring device, 13... Secondary electron detector, 14... Magnification switching circuit, 15... Electrostatic deflection plate.
Claims (1)
するための電子レンズと、前記電子線を偏向する
ための偏向器と、前記電子線を試料に照射したと
きに発生する二次電子信号を検出する手段と、前
記試料をＸＹ平面上の任意の位置に移動するＸＹ
ステージと、前記二次電子信号と前記ＸＹステー
ジの位置とにより試料の位置を検出する手段とか
らなる電子線座標測定機において、ＸＹステージ
の停止位置誤差量を補正するための補正偏向器を
設けることにより、正確な位置測定を可能にした
ことを特徴とする電子線座標測定機。 ２ 請求の範囲第１項において、補正偏向器によ
り、ＸＹステージの停止位置誤差量をリアルタイ
ムで補正することを特徴とする電子線座標測定機
。[Claims for Utility Model Registration] 1. A means for generating an electron beam, an electron lens for converging the electron beam, a deflector for deflecting the electron beam, and when a sample is irradiated with the electron beam. means for detecting a secondary electron signal generated in the XY plane;
In an electron beam coordinate measuring machine comprising a stage and means for detecting the position of a sample based on the secondary electron signal and the position of the XY stage, a correction deflector is provided for correcting a stop position error amount of the XY stage. An electron beam coordinate measuring machine characterized by making accurate position measurement possible. 2. The electron beam coordinate measuring machine according to claim 1, wherein the correction deflector corrects the stop position error amount of the XY stage in real time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14699589U JPH0385645U (en) | 1989-12-22 | 1989-12-22 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14699589U JPH0385645U (en) | 1989-12-22 | 1989-12-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0385645U true JPH0385645U (en) | 1991-08-29 |
Family
ID=31693529
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14699589U Pending JPH0385645U (en) | 1989-12-22 | 1989-12-22 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0385645U (en) |
-
1989
- 1989-12-22 JP JP14699589U patent/JPH0385645U/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3894271A (en) | Method and apparatus for aligning electron beams | |
| CA1103813A (en) | Apparatus for electron beam lithography | |
| EP0131699A1 (en) | Method and apparatus for controlling alignment and brightness of an electron beam | |
| US4264822A (en) | Electron beam testing method and apparatus of mask | |
| JPH0385645U (en) | ||
| JP3065472B2 (en) | Adjustment method of rectangular beam size and positioning in charged particle beam writing apparatus | |
| JPS57210549A (en) | Method of correction attendant on deflection | |
| JP2001322053A (en) | Method of measuring laser axis in stage moving quantity measuring system using laser length measuring machine | |
| JPH0330415A (en) | Electron beam lithography device | |
| JPH04116915A (en) | Drawing-beam diameter adjusting method | |
| JPH0282515A (en) | Electron beam lithography | |
| JP3242122B2 (en) | Pattern forming method and semiconductor device manufacturing method | |
| JPS6136342B2 (en) | ||
| JPH03262908A (en) | Electron beam coordinate measuring instrument | |
| JPH07130597A (en) | Electron beam lithography device | |
| JPH03272129A (en) | Measurement of charged particle beam diameter | |
| JP2813359B2 (en) | Electron beam exposure system | |
| JPS5824008B2 (en) | Electron beam exposure equipment | |
| JPH06196395A (en) | Electron-beam aligner | |
| JPH02250311A (en) | Drawing by electron beam | |
| JPH01144629A (en) | Orthogonal angle correcting method for electron beam exposing device | |
| JPS56112725A (en) | Exposure of electron beam | |
| JPH01204419A (en) | Charged beam exposure system | |
| JPS5558405A (en) | Electron beam type observation apparatus | |
| JPH01126502A (en) | Alignment apparatus |