JPH0355651U - - Google Patents
Info
- Publication number
- JPH0355651U JPH0355651U JP11726989U JP11726989U JPH0355651U JP H0355651 U JPH0355651 U JP H0355651U JP 11726989 U JP11726989 U JP 11726989U JP 11726989 U JP11726989 U JP 11726989U JP H0355651 U JPH0355651 U JP H0355651U
- Authority
- JP
- Japan
- Prior art keywords
- ion
- faraday case
- case
- faraday
- magnetic field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005468 ion implantation Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
Description
第１図は、本考案の第１の実施例を示す断面模
式図、第２図は本考案の第２の実施例を示す断面
模式図、第３図は従来例を示す断面模式図である
。
１……ターゲツト、２……フアラデーケース、
３……接地電極、４……イオンビーム電流検出器
（メータ）、５……真空容器、６……イオン、７
……二次電子、８……磁石、９……磁束、１０…
…バイアス電極、１１……バイアス電極電源。
FIG. 1 is a schematic cross-sectional diagram showing a first embodiment of the present invention, FIG. 2 is a schematic cross-sectional diagram showing a second embodiment of the present invention, and FIG. 3 is a schematic cross-sectional diagram showing a conventional example. . 1...Target, 2...Farada Case,
3... Ground electrode, 4... Ion beam current detector (meter), 5... Vacuum container, 6... Ion, 7
...Secondary electron, 8...Magnet, 9...Magnetic flux, 10...
...Bias electrode, 11...Bias electrode power supply.
Claims (1)
ラデーケースの軸方向と直交する成分を有する磁
界を発生する手段を設けたことを特徴とするイオ
ン注入装置。 An ion implantation apparatus characterized in that means for generating a magnetic field having a component perpendicular to the axial direction of the Faraday case is provided on the ion incidence side of the Faraday case.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11726989U JPH0355651U (en) | 1989-10-04 | 1989-10-04 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11726989U JPH0355651U (en) | 1989-10-04 | 1989-10-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0355651U true JPH0355651U (en) | 1991-05-29 |
Family
ID=31665490
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11726989U Pending JPH0355651U (en) | 1989-10-04 | 1989-10-04 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0355651U (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61227357A (en) * | 1985-03-30 | 1986-10-09 | Toshiba Corp | Ion implantation equipment |
| JPS63299043A (en) * | 1987-05-29 | 1988-12-06 | Tokyo Electron Ltd | Ion implantation device |
-
1989
- 1989-10-04 JP JP11726989U patent/JPH0355651U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61227357A (en) * | 1985-03-30 | 1986-10-09 | Toshiba Corp | Ion implantation equipment |
| JPS63299043A (en) * | 1987-05-29 | 1988-12-06 | Tokyo Electron Ltd | Ion implantation device |
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