JPH0458697B2 - - Google Patents

Info

Publication number
JPH0458697B2
JPH0458697B2 JP58030297A JP3029783A JPH0458697B2 JP H0458697 B2 JPH0458697 B2 JP H0458697B2 JP 58030297 A JP58030297 A JP 58030297A JP 3029783 A JP3029783 A JP 3029783A JP H0458697 B2 JPH0458697 B2 JP H0458697B2
Authority
JP
Japan
Prior art keywords
well
terminal
semiconductor
terminals
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58030297A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59155952A (ja
Inventor
Yasunobu Okano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP58030297A priority Critical patent/JPS59155952A/ja
Publication of JPS59155952A publication Critical patent/JPS59155952A/ja
Publication of JPH0458697B2 publication Critical patent/JPH0458697B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/911—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using passive elements as protective elements

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP58030297A 1983-02-25 1983-02-25 半導体装置 Granted JPS59155952A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58030297A JPS59155952A (ja) 1983-02-25 1983-02-25 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58030297A JPS59155952A (ja) 1983-02-25 1983-02-25 半導体装置

Publications (2)

Publication Number Publication Date
JPS59155952A JPS59155952A (ja) 1984-09-05
JPH0458697B2 true JPH0458697B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-09-18

Family

ID=12299797

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58030297A Granted JPS59155952A (ja) 1983-02-25 1983-02-25 半導体装置

Country Status (1)

Country Link
JP (1) JPS59155952A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5728171B2 (ja) * 2009-06-29 2015-06-03 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4405933A (en) * 1981-02-04 1983-09-20 Rca Corporation Protective integrated circuit device utilizing back-to-back zener diodes

Also Published As

Publication number Publication date
JPS59155952A (ja) 1984-09-05

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