JPH0458622B2 - - Google Patents

Info

Publication number
JPH0458622B2
JPH0458622B2 JP59074951A JP7495184A JPH0458622B2 JP H0458622 B2 JPH0458622 B2 JP H0458622B2 JP 59074951 A JP59074951 A JP 59074951A JP 7495184 A JP7495184 A JP 7495184A JP H0458622 B2 JPH0458622 B2 JP H0458622B2
Authority
JP
Japan
Prior art keywords
foreign
foreign matter
foreign object
inspected
sample stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59074951A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60218845A (ja
Inventor
Shunji Maeda
Mitsuyoshi Koizumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59074951A priority Critical patent/JPS60218845A/ja
Publication of JPS60218845A publication Critical patent/JPS60218845A/ja
Publication of JPH0458622B2 publication Critical patent/JPH0458622B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP59074951A 1984-04-16 1984-04-16 異物検査装置 Granted JPS60218845A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59074951A JPS60218845A (ja) 1984-04-16 1984-04-16 異物検査装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59074951A JPS60218845A (ja) 1984-04-16 1984-04-16 異物検査装置

Publications (2)

Publication Number Publication Date
JPS60218845A JPS60218845A (ja) 1985-11-01
JPH0458622B2 true JPH0458622B2 (enrdf_load_stackoverflow) 1992-09-18

Family

ID=13562139

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59074951A Granted JPS60218845A (ja) 1984-04-16 1984-04-16 異物検査装置

Country Status (1)

Country Link
JP (1) JPS60218845A (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2609594B2 (ja) * 1986-11-28 1997-05-14 株式会社日立製作所 欠陥検査装置
JPH0718805B2 (ja) * 1987-01-20 1995-03-06 日本電信電話株式会社 異物を検査する方法
JPH01147513A (ja) * 1987-12-04 1989-06-09 Hitachi Ltd 異物解析装置
JP2813147B2 (ja) * 1995-02-14 1998-10-22 三菱電機株式会社 微小異物の分析方法、分析装置およびこれらを用いる半導体素子もしくは液晶表示素子の製法
JP3130222B2 (ja) 1995-02-14 2001-01-31 三菱電機株式会社 微小異物の分析方法、分析装置およびこれらを用いる半導体素子もしくは液晶表示素子の製法
JP2008215940A (ja) 2007-03-01 2008-09-18 Canon Inc 異物検査装置及びこれを用いた異物検査方法
JP5592299B2 (ja) * 2011-03-24 2014-09-17 Ｈｏｙａ株式会社 マスクブランクの欠陥分析方法
JP6402440B2 (ja) * 2013-10-28 2018-10-10 凸版印刷株式会社 検査装置
JP6119785B2 (ja) * 2015-03-17 2017-04-26 大日本印刷株式会社 異物検査装置、異物検査方法
US11239051B2 (en) 2017-02-13 2022-02-01 Hitachi High-Tech Corporation Charged particle beam device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5364092A (en) * 1976-11-19 1978-06-08 Hitachi Ltd Element analyzer
US4357540A (en) * 1980-12-19 1982-11-02 International Business Machines Corporation Semiconductor device array mask inspection method and apparatus
JPS57197454A (en) * 1981-05-29 1982-12-03 Rigaku Denki Kogyo Kk X-ray analysing apparatus
JPS58112909U (ja) * 1982-01-28 1983-08-02 セイコーインスツルメンツ株式会社 Ｘ線膜厚装置

Also Published As

Publication number Publication date
JPS60218845A (ja) 1985-11-01

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term