JPH0456476B2 - - Google Patents

Info

Publication number
JPH0456476B2
JPH0456476B2 JP58056763A JP5676383A JPH0456476B2 JP H0456476 B2 JPH0456476 B2 JP H0456476B2 JP 58056763 A JP58056763 A JP 58056763A JP 5676383 A JP5676383 A JP 5676383A JP H0456476 B2 JPH0456476 B2 JP H0456476B2
Authority
JP
Japan
Prior art keywords
detector
layer
semiconductor layer
semiconductor
minority carriers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58056763A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58202579A (ja
Inventor
Kei Aachi Deiuitsudo
Uorutaa Sukotsuto Emu
Rairu Sumisu Dariru
Aaru Uaisubaagu Reonaado
Ei Utsudo Ronarudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Publication of JPS58202579A publication Critical patent/JPS58202579A/ja
Publication of JPH0456476B2 publication Critical patent/JPH0456476B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H10D64/011—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe

Landscapes

  • Light Receiving Elements (AREA)
JP58056763A 1982-03-31 1983-03-31 半導体装置およびその製造方法 Granted JPS58202579A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US36398082A 1982-03-31 1982-03-31
US363980 1982-03-31

Publications (2)

Publication Number Publication Date
JPS58202579A JPS58202579A (ja) 1983-11-25
JPH0456476B2 true JPH0456476B2 (OSRAM) 1992-09-08

Family

ID=23432540

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58056763A Granted JPS58202579A (ja) 1982-03-31 1983-03-31 半導体装置およびその製造方法

Country Status (3)

Country Link
EP (1) EP0090669A3 (OSRAM)
JP (1) JPS58202579A (OSRAM)
IL (1) IL68300A (OSRAM)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2166286B (en) * 1984-10-26 1988-07-20 Stc Plc Photo-detectors
IT1182478B (it) * 1985-07-01 1987-10-05 Olivetti & Co Spa Circuito di pilotaggio e di cancellazione di onde riflesse per una testina di stampa a getto di inchiostro
FR2592740B1 (fr) * 1986-01-08 1988-03-18 Commissariat Energie Atomique Detecteur photovoltaique en hgcdte a heterojonction et son procede de fabrication
US4807006A (en) * 1987-06-19 1989-02-21 International Business Machines Corporation Heterojunction interdigitated schottky barrier photodetector
US5936268A (en) * 1988-03-29 1999-08-10 Raytheon Company Epitaxial passivation of group II-VI infrared photodetectors
US5300777A (en) * 1992-03-26 1994-04-05 Texas Instruments Incorporated Two color infrared detector and method
US5384267A (en) * 1993-10-19 1995-01-24 Texas Instruments Incorporated Method of forming infrared detector by hydrogen plasma etching to form refractory metal interconnects
US5351876A (en) * 1994-01-04 1994-10-04 Texas Instruments Incorporated Apparatus and method for flip-clip bonding
US5370301A (en) * 1994-01-04 1994-12-06 Texas Instruments Incorporated Apparatus and method for flip-chip bonding

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3949223A (en) * 1973-11-01 1976-04-06 Honeywell Inc. Monolithic photoconductive detector array
FR2336804A1 (fr) * 1975-12-23 1977-07-22 Telecommunications Sa Perfectionnements apportes aux dispositifs semi-conducteurs, notamment aux detecteurs photovoltaiques comprenant un substrat a base d'un alliage cdxhg1-xte, et procede de fabrication d'un tel dispositif perfectionne
JPS5330290A (en) * 1976-09-01 1978-03-22 Fujitsu Ltd Photo conductive film

Also Published As

Publication number Publication date
IL68300A (en) 1987-02-27
EP0090669A2 (en) 1983-10-05
JPS58202579A (ja) 1983-11-25
EP0090669A3 (en) 1990-12-19

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