IL68300A - Semiconductor electromagnetic radiation detector - Google Patents
Semiconductor electromagnetic radiation detectorInfo
- Publication number
- IL68300A IL68300A IL68300A IL6830083A IL68300A IL 68300 A IL68300 A IL 68300A IL 68300 A IL68300 A IL 68300A IL 6830083 A IL6830083 A IL 6830083A IL 68300 A IL68300 A IL 68300A
- Authority
- IL
- Israel
- Prior art keywords
- electromagnetic radiation
- radiation detector
- semiconductor electromagnetic
- semiconductor
- detector
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
- H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
-
- H10D64/011—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
- H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US36398082A | 1982-03-31 | 1982-03-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IL68300A true IL68300A (en) | 1987-02-27 |
Family
ID=23432540
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL68300A IL68300A (en) | 1982-03-31 | 1983-04-06 | Semiconductor electromagnetic radiation detector |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0090669A3 (OSRAM) |
| JP (1) | JPS58202579A (OSRAM) |
| IL (1) | IL68300A (OSRAM) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2166286B (en) * | 1984-10-26 | 1988-07-20 | Stc Plc | Photo-detectors |
| IT1182478B (it) * | 1985-07-01 | 1987-10-05 | Olivetti & Co Spa | Circuito di pilotaggio e di cancellazione di onde riflesse per una testina di stampa a getto di inchiostro |
| FR2592740B1 (fr) * | 1986-01-08 | 1988-03-18 | Commissariat Energie Atomique | Detecteur photovoltaique en hgcdte a heterojonction et son procede de fabrication |
| US4807006A (en) * | 1987-06-19 | 1989-02-21 | International Business Machines Corporation | Heterojunction interdigitated schottky barrier photodetector |
| US5936268A (en) * | 1988-03-29 | 1999-08-10 | Raytheon Company | Epitaxial passivation of group II-VI infrared photodetectors |
| US5300777A (en) * | 1992-03-26 | 1994-04-05 | Texas Instruments Incorporated | Two color infrared detector and method |
| US5384267A (en) * | 1993-10-19 | 1995-01-24 | Texas Instruments Incorporated | Method of forming infrared detector by hydrogen plasma etching to form refractory metal interconnects |
| US5351876A (en) * | 1994-01-04 | 1994-10-04 | Texas Instruments Incorporated | Apparatus and method for flip-clip bonding |
| US5370301A (en) * | 1994-01-04 | 1994-12-06 | Texas Instruments Incorporated | Apparatus and method for flip-chip bonding |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3949223A (en) * | 1973-11-01 | 1976-04-06 | Honeywell Inc. | Monolithic photoconductive detector array |
| FR2336804A1 (fr) * | 1975-12-23 | 1977-07-22 | Telecommunications Sa | Perfectionnements apportes aux dispositifs semi-conducteurs, notamment aux detecteurs photovoltaiques comprenant un substrat a base d'un alliage cdxhg1-xte, et procede de fabrication d'un tel dispositif perfectionne |
| JPS5330290A (en) * | 1976-09-01 | 1978-03-22 | Fujitsu Ltd | Photo conductive film |
-
1983
- 1983-03-31 EP EP19830301844 patent/EP0090669A3/en not_active Withdrawn
- 1983-03-31 JP JP58056763A patent/JPS58202579A/ja active Granted
- 1983-04-06 IL IL68300A patent/IL68300A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0456476B2 (OSRAM) | 1992-09-08 |
| EP0090669A2 (en) | 1983-10-05 |
| JPS58202579A (ja) | 1983-11-25 |
| EP0090669A3 (en) | 1990-12-19 |
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