JPH0455153U - - Google Patents
Info
- Publication number
- JPH0455153U JPH0455153U JP9559690U JP9559690U JPH0455153U JP H0455153 U JPH0455153 U JP H0455153U JP 9559690 U JP9559690 U JP 9559690U JP 9559690 U JP9559690 U JP 9559690U JP H0455153 U JPH0455153 U JP H0455153U
- Authority
- JP
- Japan
- Prior art keywords
- film
- thermal conductivity
- good thermal
- circuit blocks
- heat source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 206010057040 Temperature intolerance Diseases 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000008543 heat sensitivity Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
Description
第１図ａ，ｂは本考案の一実施例を示す説明図
、第２図ａ，ｂは本考案の他の実施例を示す説明
図、第３図は同一チツプ内に熱源とともに存在す
る熱感度の高い回路ブロツクの熱分布を均一化す
るために従来採つてきたレイアウトの例を示す説
明図である。
１……熱源、２……熱感度の高い回路ブロツク
、２１……酸化膜、２２……第１層目のＡｌ膜、
２３……層間絶縁膜、２４……第２層目のＡｌ膜
、２５……ボロンナイトライドダイヤモンド膜、
２６……配線ＡＬ膜。なお図中同一符号は同一ま
たは相当する部分を示す。
Figures 1a and b are explanatory diagrams showing one embodiment of the present invention, Figures 2a and b are explanatory diagrams showing another embodiment of the present invention, and Figure 3 is an explanatory diagram showing the heat source and the heat source in the same chip. FIG. 2 is an explanatory diagram showing an example of a layout conventionally adopted to equalize heat distribution in a highly sensitive circuit block. 1...Heat source, 2...Circuit block with high heat sensitivity, 21...Oxide film, 22...First layer Al film,
23... Interlayer insulating film, 24... Second layer Al film, 25... Boron nitride diamond film,
26...Wiring AL film. Note that the same reference numerals in the figures indicate the same or corresponding parts.
Claims (1)
高い回路ブロツクの熱分布を均一化するため、該
回路ブロツクを熱伝導性の良好な膜で囲うか、あ
るいは、熱伝導性の良好な絶縁膜で覆つたことを
特徴とする半導体装置。 In order to equalize the heat distribution of highly thermally sensitive circuit blocks that exist together with a heat source on the same chip, the circuit blocks are surrounded by a film with good thermal conductivity or covered with an insulating film with good thermal conductivity. A semiconductor device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9559690U JPH0455153U (en) | 1990-09-13 | 1990-09-13 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9559690U JPH0455153U (en) | 1990-09-13 | 1990-09-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0455153U true JPH0455153U (en) | 1992-05-12 |
Family
ID=31834424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9559690U Pending JPH0455153U (en) | 1990-09-13 | 1990-09-13 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0455153U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005079425A (en) * | 2003-09-02 | 2005-03-24 | Rohm Co Ltd | Semiconductor integrated circuit |
| JP2008232863A (en) * | 2007-03-21 | 2008-10-02 | Seiko Npc Corp | Infrared sensor device |
| JP2018179628A (en) * | 2017-04-07 | 2018-11-15 | セイコーＮｐｃ株式会社 | Infrared sensor device |
-
1990
- 1990-09-13 JP JP9559690U patent/JPH0455153U/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005079425A (en) * | 2003-09-02 | 2005-03-24 | Rohm Co Ltd | Semiconductor integrated circuit |
| JP2008232863A (en) * | 2007-03-21 | 2008-10-02 | Seiko Npc Corp | Infrared sensor device |
| JP2018179628A (en) * | 2017-04-07 | 2018-11-15 | セイコーＮｐｃ株式会社 | Infrared sensor device |
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