JPH0454395B2 - - Google Patents
Info
- Publication number
- JPH0454395B2 JPH0454395B2 JP54053454A JP5345479A JPH0454395B2 JP H0454395 B2 JPH0454395 B2 JP H0454395B2 JP 54053454 A JP54053454 A JP 54053454A JP 5345479 A JP5345479 A JP 5345479A JP H0454395 B2 JPH0454395 B2 JP H0454395B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor
- silicon nitride
- nitride film
- semiconductor region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
Landscapes
- Non-Volatile Memory (AREA)
- Led Devices (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5345479A JPS55146959A (en) | 1979-05-02 | 1979-05-02 | Semiconductor device having silicon nitride film and integrated circuit using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5345479A JPS55146959A (en) | 1979-05-02 | 1979-05-02 | Semiconductor device having silicon nitride film and integrated circuit using the same |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63217955A Division JPH01117369A (ja) | 1988-08-31 | 1988-08-31 | シリコンナイトライド膜を有する半導体デバイス |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55146959A JPS55146959A (en) | 1980-11-15 |
| JPH0454395B2 true JPH0454395B2 (enrdf_load_stackoverflow) | 1992-08-31 |
Family
ID=12943297
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5345479A Granted JPS55146959A (en) | 1979-05-02 | 1979-05-02 | Semiconductor device having silicon nitride film and integrated circuit using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55146959A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58168275A (ja) * | 1982-03-29 | 1983-10-04 | Fujitsu Ltd | 半導体装置 |
| JPH01117369A (ja) * | 1988-08-31 | 1989-05-10 | Agency Of Ind Science & Technol | シリコンナイトライド膜を有する半導体デバイス |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5140432B2 (enrdf_load_stackoverflow) * | 1973-04-19 | 1976-11-04 | ||
| JPS5115396A (ja) * | 1974-07-30 | 1976-02-06 | Hochiki Co | Keihoshisutemu |
| US3979613A (en) * | 1975-06-18 | 1976-09-07 | Sperry Rand Corporation | Multi-terminal controlled-inversion semiconductor devices |
| JPS54156486A (en) * | 1978-05-31 | 1979-12-10 | Toshiba Corp | Negative resistance element |
-
1979
- 1979-05-02 JP JP5345479A patent/JPS55146959A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55146959A (en) | 1980-11-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5986287A (en) | Semiconductor structure for a transistor | |
| US3339128A (en) | Insulated offset gate field effect transistor | |
| JP3327135B2 (ja) | 電界効果トランジスタ | |
| US3283221A (en) | Field effect transistor | |
| US4819037A (en) | Semiconductor device | |
| JPH0766971B2 (ja) | 炭化珪素半導体装置 | |
| KR930002594B1 (ko) | 반도체장치의 제조방법 | |
| US4127861A (en) | Metal base transistor with thin film amorphous semiconductors | |
| KR840001605B1 (ko) | 박막 트랜지스터 | |
| JPH03501670A (ja) | 炭化珪素製mosfet | |
| Vaidyanathan et al. | Planar, ion-implanted bipolar devices in GaAs | |
| JPH0454395B2 (enrdf_load_stackoverflow) | ||
| US4569118A (en) | Planar gate turn-off field controlled thyristors and planar junction gate field effect transistors, and method of making same | |
| US3087100A (en) | Ohmic contacts to semiconductor devices | |
| JPS63181374A (ja) | 半導体デバイス | |
| JPH02130868A (ja) | 半導体装置 | |
| EP0093557A2 (en) | High-speed complementary semiconductor integrated circuit | |
| JPH0770726B2 (ja) | 炭化珪素を用いた電界効果トランジスタ | |
| JPS63244779A (ja) | 電界効果トランジスタ | |
| JP3129586B2 (ja) | 縦型バイポーラトランジスタ | |
| JPS58212178A (ja) | 薄膜電界効果トランジスタおよびその製造方法 | |
| US5315135A (en) | Semiconductor device having I2 L gate with heterojunction | |
| JPH0556849B2 (enrdf_load_stackoverflow) | ||
| JPH0131314B2 (enrdf_load_stackoverflow) | ||
| JPH0550148B2 (enrdf_load_stackoverflow) |