JPS55146959A - Semiconductor device having silicon nitride film and integrated circuit using the same - Google Patents

Semiconductor device having silicon nitride film and integrated circuit using the same

Info

Publication number
JPS55146959A
JPS55146959A JP5345479A JP5345479A JPS55146959A JP S55146959 A JPS55146959 A JP S55146959A JP 5345479 A JP5345479 A JP 5345479A JP 5345479 A JP5345479 A JP 5345479A JP S55146959 A JPS55146959 A JP S55146959A
Authority
JP
Japan
Prior art keywords
film
si3n4
semiconductor device
sio2
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5345479A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0454395B2 (enrdf_load_stackoverflow
Inventor
Yutaka Hayashi
Hidekazu Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP5345479A priority Critical patent/JPS55146959A/ja
Publication of JPS55146959A publication Critical patent/JPS55146959A/ja
Publication of JPH0454395B2 publication Critical patent/JPH0454395B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

Landscapes

  • Non-Volatile Memory (AREA)
  • Led Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP5345479A 1979-05-02 1979-05-02 Semiconductor device having silicon nitride film and integrated circuit using the same Granted JPS55146959A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5345479A JPS55146959A (en) 1979-05-02 1979-05-02 Semiconductor device having silicon nitride film and integrated circuit using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5345479A JPS55146959A (en) 1979-05-02 1979-05-02 Semiconductor device having silicon nitride film and integrated circuit using the same

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP63217955A Division JPH01117369A (ja) 1988-08-31 1988-08-31 シリコンナイトライド膜を有する半導体デバイス

Publications (2)

Publication Number Publication Date
JPS55146959A true JPS55146959A (en) 1980-11-15
JPH0454395B2 JPH0454395B2 (enrdf_load_stackoverflow) 1992-08-31

Family

ID=12943297

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5345479A Granted JPS55146959A (en) 1979-05-02 1979-05-02 Semiconductor device having silicon nitride film and integrated circuit using the same

Country Status (1)

Country Link
JP (1) JPS55146959A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58168275A (ja) * 1982-03-29 1983-10-04 Fujitsu Ltd 半導体装置
JPH01117369A (ja) * 1988-08-31 1989-05-10 Agency Of Ind Science & Technol シリコンナイトライド膜を有する半導体デバイス

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49131391A (enrdf_load_stackoverflow) * 1973-04-19 1974-12-17
JPS5115396A (ja) * 1974-07-30 1976-02-06 Hochiki Co Keihoshisutemu
JPS5234678A (en) * 1975-06-18 1977-03-16 Sperry Rand Corp Multiiterminal inversion controlled semiconductor device
JPS54156486A (en) * 1978-05-31 1979-12-10 Toshiba Corp Negative resistance element

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49131391A (enrdf_load_stackoverflow) * 1973-04-19 1974-12-17
JPS5115396A (ja) * 1974-07-30 1976-02-06 Hochiki Co Keihoshisutemu
JPS5234678A (en) * 1975-06-18 1977-03-16 Sperry Rand Corp Multiiterminal inversion controlled semiconductor device
JPS54156486A (en) * 1978-05-31 1979-12-10 Toshiba Corp Negative resistance element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58168275A (ja) * 1982-03-29 1983-10-04 Fujitsu Ltd 半導体装置
JPH01117369A (ja) * 1988-08-31 1989-05-10 Agency Of Ind Science & Technol シリコンナイトライド膜を有する半導体デバイス

Also Published As

Publication number Publication date
JPH0454395B2 (enrdf_load_stackoverflow) 1992-08-31

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