JPH0451520B2 - - Google Patents

Info

Publication number
JPH0451520B2
JPH0451520B2 JP58175319A JP17531983A JPH0451520B2 JP H0451520 B2 JPH0451520 B2 JP H0451520B2 JP 58175319 A JP58175319 A JP 58175319A JP 17531983 A JP17531983 A JP 17531983A JP H0451520 B2 JPH0451520 B2 JP H0451520B2
Authority
JP
Japan
Prior art keywords
reactor
growth
gas
substrate
vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58175319A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6065793A (ja
Inventor
Motoji Morizaki
Juzaburo Ban
Nobuyasu Hase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP58175319A priority Critical patent/JPS6065793A/ja
Publication of JPS6065793A publication Critical patent/JPS6065793A/ja
Publication of JPH0451520B2 publication Critical patent/JPH0451520B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP58175319A 1983-09-22 1983-09-22 気相成長方法 Granted JPS6065793A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58175319A JPS6065793A (ja) 1983-09-22 1983-09-22 気相成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58175319A JPS6065793A (ja) 1983-09-22 1983-09-22 気相成長方法

Publications (2)

Publication Number Publication Date
JPS6065793A JPS6065793A (ja) 1985-04-15
JPH0451520B2 true JPH0451520B2 (enExample) 1992-08-19

Family

ID=15994004

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58175319A Granted JPS6065793A (ja) 1983-09-22 1983-09-22 気相成長方法

Country Status (1)

Country Link
JP (1) JPS6065793A (enExample)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5320763A (en) * 1976-08-10 1978-02-25 Nippon Telegr & Teleph Corp <Ntt> Crystal growing method and apparatus
JPS5884181A (ja) * 1981-11-11 1983-05-20 松下電器産業株式会社 カ−ボン部材の純化処理方法

Also Published As

Publication number Publication date
JPS6065793A (ja) 1985-04-15

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