JPH0451473Y2 - - Google Patents
Info
- Publication number
- JPH0451473Y2 JPH0451473Y2 JP1986039054U JP3905486U JPH0451473Y2 JP H0451473 Y2 JPH0451473 Y2 JP H0451473Y2 JP 1986039054 U JP1986039054 U JP 1986039054U JP 3905486 U JP3905486 U JP 3905486U JP H0451473 Y2 JPH0451473 Y2 JP H0451473Y2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- electrode
- impedance
- high frequency
- etching rate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 33
- 238000001312 dry etching Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 description 16
- 239000002245 particle Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986039054U JPH0451473Y2 (de) | 1986-03-19 | 1986-03-19 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986039054U JPH0451473Y2 (de) | 1986-03-19 | 1986-03-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62152435U JPS62152435U (de) | 1987-09-28 |
| JPH0451473Y2 true JPH0451473Y2 (de) | 1992-12-03 |
Family
ID=30851870
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1986039054U Expired JPH0451473Y2 (de) | 1986-03-19 | 1986-03-19 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0451473Y2 (de) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58125831A (ja) * | 1982-01-22 | 1983-07-27 | Seiko Epson Corp | ドライエツチング装置 |
| JPS58168232A (ja) * | 1982-03-30 | 1983-10-04 | Fujitsu Ltd | 平行平板型ドライエツチング装置 |
-
1986
- 1986-03-19 JP JP1986039054U patent/JPH0451473Y2/ja not_active Expired
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58125831A (ja) * | 1982-01-22 | 1983-07-27 | Seiko Epson Corp | ドライエツチング装置 |
| JPS58168232A (ja) * | 1982-03-30 | 1983-10-04 | Fujitsu Ltd | 平行平板型ドライエツチング装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62152435U (de) | 1987-09-28 |
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