JPH0451070B2 - - Google Patents

Info

Publication number
JPH0451070B2
JPH0451070B2 JP58174633A JP17463383A JPH0451070B2 JP H0451070 B2 JPH0451070 B2 JP H0451070B2 JP 58174633 A JP58174633 A JP 58174633A JP 17463383 A JP17463383 A JP 17463383A JP H0451070 B2 JPH0451070 B2 JP H0451070B2
Authority
JP
Japan
Prior art keywords
film
light
amorphous silicon
multilayer reflective
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58174633A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6066470A (ja
Inventor
Fujio Okumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP58174633A priority Critical patent/JPS6066470A/ja
Publication of JPS6066470A publication Critical patent/JPS6066470A/ja
Publication of JPH0451070B2 publication Critical patent/JPH0451070B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon

Landscapes

  • Liquid Crystal (AREA)
JP58174633A 1983-09-21 1983-09-21 薄膜トランジスタ Granted JPS6066470A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58174633A JPS6066470A (ja) 1983-09-21 1983-09-21 薄膜トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58174633A JPS6066470A (ja) 1983-09-21 1983-09-21 薄膜トランジスタ

Publications (2)

Publication Number Publication Date
JPS6066470A JPS6066470A (ja) 1985-04-16
JPH0451070B2 true JPH0451070B2 (enrdf_load_stackoverflow) 1992-08-18

Family

ID=15982001

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58174633A Granted JPS6066470A (ja) 1983-09-21 1983-09-21 薄膜トランジスタ

Country Status (1)

Country Link
JP (1) JPS6066470A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07112053B2 (ja) * 1990-04-13 1995-11-29 富士ゼロックス株式会社 薄膜スイッチング素子アレイ
JPH08190106A (ja) * 1995-01-10 1996-07-23 Victor Co Of Japan Ltd アクティブマトリクス装置及びその駆動方法
JP2016048706A (ja) * 2014-08-27 2016-04-07 三菱電機株式会社 アレイ基板およびその製造方法
KR20220106156A (ko) * 2019-11-27 2022-07-28 코닝 인코포레이티드 반도체 소자 제조용 유리 웨이퍼

Also Published As

Publication number Publication date
JPS6066470A (ja) 1985-04-16

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