JPH0449776B2 - - Google Patents

Info

Publication number
JPH0449776B2
JPH0449776B2 JP22331183A JP22331183A JPH0449776B2 JP H0449776 B2 JPH0449776 B2 JP H0449776B2 JP 22331183 A JP22331183 A JP 22331183A JP 22331183 A JP22331183 A JP 22331183A JP H0449776 B2 JPH0449776 B2 JP H0449776B2
Authority
JP
Japan
Prior art keywords
conductive substrate
reaction chamber
electrode
raw material
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP22331183A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60116124A (ja
Inventor
Zenko Hirose
Takeshi Ueno
Katsumi Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP22331183A priority Critical patent/JPS60116124A/ja
Publication of JPS60116124A publication Critical patent/JPS60116124A/ja
Publication of JPH0449776B2 publication Critical patent/JPH0449776B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5093—Coaxial electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Photovoltaic Devices (AREA)
JP22331183A 1983-11-29 1983-11-29 成膜方法 Granted JPS60116124A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22331183A JPS60116124A (ja) 1983-11-29 1983-11-29 成膜方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22331183A JPS60116124A (ja) 1983-11-29 1983-11-29 成膜方法

Publications (2)

Publication Number Publication Date
JPS60116124A JPS60116124A (ja) 1985-06-22
JPH0449776B2 true JPH0449776B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-08-12

Family

ID=16796156

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22331183A Granted JPS60116124A (ja) 1983-11-29 1983-11-29 成膜方法

Country Status (1)

Country Link
JP (1) JPS60116124A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Also Published As

Publication number Publication date
JPS60116124A (ja) 1985-06-22

Similar Documents

Publication Publication Date Title
JPS6063375A (ja) 気相法堆積膜製造装置
US4897284A (en) Process for forming a deposited film on each of a plurality of substrates by way of microwave plasma chemical vapor deposition method
JPS6137354B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0449776B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS62142783A (ja) プラズマｃｖｄ法による堆積膜形成装置
JPH05217915A (ja) プラズマｃｖｄ装置
JPS6063376A (ja) 気相法堆積膜製造装置
JP3259452B2 (ja) プラズマｃｖｄ装置に用いる電極及びプラズマｃｖｄ装置
JPS59217614A (ja) アモルフアスシリコン成膜装置
JPS6010619A (ja) グロ−放電による膜形成方法
JPS60128612A (ja) プラズマｃｖｄ装置
JPS58146436A (ja) グロ−放電による膜形成装置
JPS58190813A (ja) 成膜装置
JPS5817612A (ja) グロ−放電による膜形成装置
JPS6010617A (ja) プラズマｃｖｄ装置における基体加熱方法
JPH01162768A (ja) 水素化アモルファスシリコン成膜装置
JPS6086277A (ja) 放電による堆積膜の形成方法
JPH0639708B2 (ja) 薄膜製造方法及び薄膜製造装置
JPH06326080A (ja) プラズマｃｖｄ装置
JPS58118111A (ja) プラズマｃｖｄ装置
JPH02250975A (ja) グロー放電分解装置
JPH11140653A (ja) プラズマｃｖｄ装置
JPS6242027B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0546093B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS62142782A (ja) グロ−放電法による堆積膜形成装置