JPH0449519B2 - - Google Patents

Info

Publication number
JPH0449519B2
JPH0449519B2 JP14941787A JP14941787A JPH0449519B2 JP H0449519 B2 JPH0449519 B2 JP H0449519B2 JP 14941787 A JP14941787 A JP 14941787A JP 14941787 A JP14941787 A JP 14941787A JP H0449519 B2 JPH0449519 B2 JP H0449519B2
Authority
JP
Japan
Prior art keywords
diamond film
mask
substrate
diamond
vapor phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP14941787A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63315598A (ja
Inventor
Kazuaki Kurihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14941787A priority Critical patent/JPS63315598A/ja
Publication of JPS63315598A publication Critical patent/JPS63315598A/ja
Publication of JPH0449519B2 publication Critical patent/JPH0449519B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP14941787A 1987-06-16 1987-06-16 気相合成ダイヤモンド膜のパタ−ニング方法 Granted JPS63315598A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14941787A JPS63315598A (ja) 1987-06-16 1987-06-16 気相合成ダイヤモンド膜のパタ−ニング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14941787A JPS63315598A (ja) 1987-06-16 1987-06-16 気相合成ダイヤモンド膜のパタ−ニング方法

Publications (2)

Publication Number Publication Date
JPS63315598A JPS63315598A (ja) 1988-12-23
JPH0449519B2 true JPH0449519B2 (en:Method) 1992-08-11

Family

ID=15474659

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14941787A Granted JPS63315598A (ja) 1987-06-16 1987-06-16 気相合成ダイヤモンド膜のパタ−ニング方法

Country Status (1)

Country Link
JP (1) JPS63315598A (en:Method)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02184598A (ja) * 1989-01-10 1990-07-19 Kobe Steel Ltd 気相合成ダイヤモンド選択成膜方法

Also Published As

Publication number Publication date
JPS63315598A (ja) 1988-12-23

Similar Documents

Publication Publication Date Title
US4941942A (en) Method of manufacturing a mask support of sic for x-ray lithography masks
JPS59208743A (ja) 半導体装置の製造方法
JPH05507390A (ja) 基板の薄化エッチングのための方法
JPH0319690B2 (en:Method)
JP2753707B2 (ja) エツチング法
EP0020134A1 (en) Method of enhancing epitaxy and preferred orientation in films deposited on solid substrates
JPH0449519B2 (en:Method)
JPH0530295B2 (en:Method)
JPS6041229A (ja) 半導体装置の製造方法及びその製造装置
JP2771472B2 (ja) 半導体装置の製造方法
JP2634183B2 (ja) ダイヤモンド結晶の形成方法
JPS61228633A (ja) 薄膜形成方法
JP3350235B2 (ja) Ｘ線マスクの製造方法及びそれにより得られたｘ線マスク
JPH0194347A (ja) 放射リソグラフィ用マスクの製造方法
US5260235A (en) Method of making laser generated I. C. pattern for masking
JP2586700B2 (ja) 配線形成方法
US4368215A (en) High resolution masking process for minimizing scattering and lateral deflection in collimated ion beams
JP2985294B2 (ja) 配線形成方法
JP3419583B2 (ja) ガリウム砒素基板における選択的結晶成長方法
JPS63250121A (ja) Ｘ線マスクの製造方法
JPH0574708A (ja) 結晶の成長方法
JPH02184598A (ja) 気相合成ダイヤモンド選択成膜方法
JPH06260396A (ja) Ｘ線リソグラフィ用マスクの製造方法
JPH02181428A (ja) 薄膜形成方法
JPH0456447B2 (en:Method)

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees