JPH0446474B2 - - Google Patents

Info

Publication number
JPH0446474B2
JPH0446474B2 JP59167699A JP16769984A JPH0446474B2 JP H0446474 B2 JPH0446474 B2 JP H0446474B2 JP 59167699 A JP59167699 A JP 59167699A JP 16769984 A JP16769984 A JP 16769984A JP H0446474 B2 JPH0446474 B2 JP H0446474B2
Authority
JP
Japan
Prior art keywords
layer
top layer
self
microns
planar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59167699A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6052080A (ja
Inventor
Eruton Akurei Donarudo
Daburyuu Eichi Engeruman Reinhaato
Kobayashi Inoe Teruko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of JPS6052080A publication Critical patent/JPS6052080A/ja
Publication of JPH0446474B2 publication Critical patent/JPH0446474B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30617—Anisotropic liquid etching

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Semiconductor Lasers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP59167699A 1983-08-12 1984-08-10 自己整合型多層レーザ構造体の製造方法 Granted JPS6052080A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/522,918 US4623427A (en) 1983-08-12 1983-08-12 Means and method for a self-aligned multilayer laser epitaxy structure device
US522918 1983-08-12

Publications (2)

Publication Number Publication Date
JPS6052080A JPS6052080A (ja) 1985-03-23
JPH0446474B2 true JPH0446474B2 (enExample) 1992-07-30

Family

ID=24082915

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59167699A Granted JPS6052080A (ja) 1983-08-12 1984-08-10 自己整合型多層レーザ構造体の製造方法

Country Status (3)

Country Link
US (1) US4623427A (enExample)
EP (1) EP0137573A3 (enExample)
JP (1) JPS6052080A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0209194B1 (en) * 1985-07-15 1991-04-17 Koninklijke Philips Electronics N.V. Method of manufacturing a semiconductor device, in which a layer of gallium arsenide is etched in a basic solution of hydrogen peroxide
EP0676614B1 (en) * 1994-04-11 2001-06-20 International Business Machines Corporation Calibration standards for profilometers and methods of producing them

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4033796A (en) * 1975-06-23 1977-07-05 Xerox Corporation Method of making buried-heterostructure diode injection laser
US4099305A (en) * 1977-03-14 1978-07-11 Bell Telephone Laboratories, Incorporated Fabrication of mesa devices by MBE growth over channeled substrates
US4166253A (en) * 1977-08-15 1979-08-28 International Business Machines Corporation Heterostructure diode injection laser having a constricted active region
JPS5723292A (en) * 1980-07-16 1982-02-06 Sony Corp Semiconductor laser device and manufacture thereof
US4433417A (en) * 1981-05-29 1984-02-21 Xerox Corporation Nonplanar substrate injection lasers grown in vapor phase epitaxy

Also Published As

Publication number Publication date
JPS6052080A (ja) 1985-03-23
EP0137573A3 (en) 1988-01-13
US4623427A (en) 1986-11-18
EP0137573A2 (en) 1985-04-17

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