JPS6052080A - 自己整合型多層レーザ構造体の製造方法 - Google Patents
自己整合型多層レーザ構造体の製造方法Info
- Publication number
- JPS6052080A JPS6052080A JP59167699A JP16769984A JPS6052080A JP S6052080 A JPS6052080 A JP S6052080A JP 59167699 A JP59167699 A JP 59167699A JP 16769984 A JP16769984 A JP 16769984A JP S6052080 A JPS6052080 A JP S6052080A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- self
- microns
- aligned
- laser structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title description 18
- 238000004519 manufacturing process Methods 0.000 title description 3
- 239000000758 substrate Substances 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 description 8
- 238000001465 metallisation Methods 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 229910003086 Ti–Pt Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000003362 replicative effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
- H10D62/405—Orientations of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
- H01L21/30617—Anisotropic liquid etching
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Semiconductor Lasers (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/522,918 US4623427A (en) | 1983-08-12 | 1983-08-12 | Means and method for a self-aligned multilayer laser epitaxy structure device |
| US522918 | 1983-08-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6052080A true JPS6052080A (ja) | 1985-03-23 |
| JPH0446474B2 JPH0446474B2 (enExample) | 1992-07-30 |
Family
ID=24082915
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59167699A Granted JPS6052080A (ja) | 1983-08-12 | 1984-08-10 | 自己整合型多層レーザ構造体の製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4623427A (enExample) |
| EP (1) | EP0137573A3 (enExample) |
| JP (1) | JPS6052080A (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0209194B1 (en) * | 1985-07-15 | 1991-04-17 | Koninklijke Philips Electronics N.V. | Method of manufacturing a semiconductor device, in which a layer of gallium arsenide is etched in a basic solution of hydrogen peroxide |
| EP0676614B1 (en) * | 1994-04-11 | 2001-06-20 | International Business Machines Corporation | Calibration standards for profilometers and methods of producing them |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4033796A (en) * | 1975-06-23 | 1977-07-05 | Xerox Corporation | Method of making buried-heterostructure diode injection laser |
| US4099305A (en) * | 1977-03-14 | 1978-07-11 | Bell Telephone Laboratories, Incorporated | Fabrication of mesa devices by MBE growth over channeled substrates |
| US4166253A (en) * | 1977-08-15 | 1979-08-28 | International Business Machines Corporation | Heterostructure diode injection laser having a constricted active region |
| JPS5723292A (en) * | 1980-07-16 | 1982-02-06 | Sony Corp | Semiconductor laser device and manufacture thereof |
| US4433417A (en) * | 1981-05-29 | 1984-02-21 | Xerox Corporation | Nonplanar substrate injection lasers grown in vapor phase epitaxy |
-
1983
- 1983-08-12 US US06/522,918 patent/US4623427A/en not_active Expired - Fee Related
-
1984
- 1984-03-07 EP EP84301493A patent/EP0137573A3/en not_active Withdrawn
- 1984-08-10 JP JP59167699A patent/JPS6052080A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| EP0137573A3 (en) | 1988-01-13 |
| US4623427A (en) | 1986-11-18 |
| JPH0446474B2 (enExample) | 1992-07-30 |
| EP0137573A2 (en) | 1985-04-17 |
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