JPH0446468B2 - - Google Patents
Info
- Publication number
- JPH0446468B2 JPH0446468B2 JP60297463A JP29746385A JPH0446468B2 JP H0446468 B2 JPH0446468 B2 JP H0446468B2 JP 60297463 A JP60297463 A JP 60297463A JP 29746385 A JP29746385 A JP 29746385A JP H0446468 B2 JPH0446468 B2 JP H0446468B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- solar cell
- electrical contact
- silver paste
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 23
- 238000010304 firing Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 description 20
- 239000004332 silver Substances 0.000 description 20
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 238000007639 printing Methods 0.000 description 3
- 150000003378 silver Chemical class 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910019213 POCl3 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- -1 phosphorus compound Chemical class 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60297463A JPS62156881A (ja) | 1985-12-28 | 1985-12-28 | 太陽電池素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60297463A JPS62156881A (ja) | 1985-12-28 | 1985-12-28 | 太陽電池素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62156881A JPS62156881A (ja) | 1987-07-11 |
| JPH0446468B2 true JPH0446468B2 (zh) | 1992-07-30 |
Family
ID=17846817
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60297463A Granted JPS62156881A (ja) | 1985-12-28 | 1985-12-28 | 太陽電池素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62156881A (zh) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2706113B2 (ja) * | 1988-11-25 | 1998-01-28 | 工業技術院長 | 光電変換素子 |
| WO1992022928A1 (en) * | 1991-06-11 | 1992-12-23 | Mobil Solar Energy Corporation | Improved solar cell and method of making same |
| EP0729189A1 (en) * | 1995-02-21 | 1996-08-28 | Interuniversitair Micro-Elektronica Centrum Vzw | Method of preparing solar cells and products obtained thereof |
| JP4121928B2 (ja) | 2003-10-08 | 2008-07-23 | シャープ株式会社 | 太陽電池の製造方法 |
| JP2008205137A (ja) * | 2007-02-19 | 2008-09-04 | Sanyo Electric Co Ltd | 太陽電池及び太陽電池モジュール |
| CN102077358B (zh) * | 2008-07-03 | 2015-09-09 | 三菱电机株式会社 | 光电动势装置及其制造方法 |
| WO2010123980A1 (en) * | 2009-04-22 | 2010-10-28 | Tetrasun, Inc. | Localized metal contacts by localized laser assisted conversion of functional films in solar cells |
| WO2011004758A1 (ja) * | 2009-07-09 | 2011-01-13 | 株式会社シンク・ラボラトリー | 太陽電池の製造方法及び太陽電池 |
| JP5375414B2 (ja) * | 2009-07-31 | 2013-12-25 | 信越化学工業株式会社 | 太陽電池及びその製造方法 |
| CN102479883A (zh) * | 2009-11-27 | 2012-05-30 | 无锡尚德太阳能电力有限公司 | 太阳电池正面电极的形成方法 |
| WO2011095968A2 (en) * | 2010-02-03 | 2011-08-11 | Xjet Ltd. | Fabrication of contacts for semiconductor substrates |
| CN102655030B (zh) * | 2011-03-02 | 2015-07-15 | 韩国电子通信研究院 | 导电组合物、含其的硅太阳能电池、及其制造方法 |
| KR20120100698A (ko) * | 2011-03-02 | 2012-09-12 | 한국전자통신연구원 | 전도성 조성물, 이를 포함하는 실리콘 태양전지 및 그 제조방법 |
| JP2013149815A (ja) * | 2012-01-20 | 2013-08-01 | Shin Etsu Chem Co Ltd | 太陽電池及びその製造方法 |
| JP5908763B2 (ja) * | 2012-03-19 | 2016-04-26 | 京セラ株式会社 | 光電変換素子および光電変換素子の製造方法 |
-
1985
- 1985-12-28 JP JP60297463A patent/JPS62156881A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62156881A (ja) | 1987-07-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |