JPH0446468B2 - - Google Patents
Info
- Publication number
- JPH0446468B2 JPH0446468B2 JP60297463A JP29746385A JPH0446468B2 JP H0446468 B2 JPH0446468 B2 JP H0446468B2 JP 60297463 A JP60297463 A JP 60297463A JP 29746385 A JP29746385 A JP 29746385A JP H0446468 B2 JPH0446468 B2 JP H0446468B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- solar cell
- electrical contact
- silver paste
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 23
- 238000010304 firing Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 description 20
- 239000004332 silver Substances 0.000 description 20
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 238000007639 printing Methods 0.000 description 3
- 150000003378 silver Chemical class 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910019213 POCl3 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- -1 phosphorus compound Chemical class 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、太陽電池素子に関する。[Detailed description of the invention] Industrial applications The present invention relates to a solar cell element.
背景技術
従来から太陽電池素子の光電変換効率を高める
ために、できるだけ表面電極とシリコン基板との
接触面積を低減し、かつ直列抵抗が大きくならな
いような電極構造が改良されている。その一例と
して、第５図に示されるように、主電極１とグリ
ツド電極２とから成る表面電極パターンを、シリ
コン基板３の反射防止膜４の上にスクリーン印刷
によつて形成し、700℃程度で熱処理することに
よつて電極形成用銀ペーストが反射防止膜４を貫
通し、シリコン基板３の良好な電気的コンタクト
を得るようにしていた。BACKGROUND ART Conventionally, in order to increase the photoelectric conversion efficiency of solar cell elements, electrode structures have been improved in which the contact area between the surface electrode and the silicon substrate is reduced as much as possible and the series resistance is not increased. As an example, as shown in FIG. 5, a surface electrode pattern consisting of a main electrode 1 and a grid electrode 2 is formed on an antireflection film 4 of a silicon substrate 3 by screen printing, and the surface electrode pattern is heated to about 700°C. By performing the heat treatment, the electrode-forming silver paste penetrated through the antireflection film 4 and good electrical contact with the silicon substrate 3 was obtained.
発明が解決しようとする問題点
このような先行技術では、表面電極パターンの
受光面積に対して占める割合が10％程度と高く、
そのため主電極１およびグリツド電極２での表面
再結合速度が大きく、太陽電池の電気特性、特に
開放電圧を下げる傾向にあつた。また受光面積に
対する電極面積を５％程度減らすことにより、表
面再結合速度を低減させ、開放電圧を上げること
は可能であるが、この場合、直列抵抗が大きくな
つてしまうため、太陽電池の曲線因子が小さくな
り、取り出せる電力が小さくなつてしまう問題点
がある。Problems to be Solved by the Invention In such prior art, the ratio of the surface electrode pattern to the light-receiving area is as high as about 10%;
Therefore, the surface recombination rate at the main electrode 1 and the grid electrode 2 was high, which tended to lower the electrical properties of the solar cell, especially the open circuit voltage. It is also possible to reduce the surface recombination rate and increase the open-circuit voltage by reducing the electrode area relative to the light-receiving area by about 5%, but in this case, the series resistance increases, so the fill factor of the solar cell decreases. There is a problem that the amount of power that can be extracted becomes smaller.
本発明の目的は、上述の技術的課題を解決し、
光電変換効率を高めるようにした太陽電池素子を
提供することである。 The purpose of the present invention is to solve the above-mentioned technical problems,
An object of the present invention is to provide a solar cell element with increased photoelectric conversion efficiency.
問題点を解決するための手段
本発明の太陽電池素子は、PN接合を有する基
板の受光面側に形成された反射防止膜と、
焼成により前記反射防止膜を貫通して前記基板
と良好なる電気的コンタクトを得ることのできる
金属ペースト材料を焼成して形成されるグリツド
電極と、焼成で前記反射防止膜を貫通せず、基板
と良好なる電気的コンタクトを得ることのできな
い金属ペースト材料を焼成して形成される前記グ
リツド電極を電気的に連結する主電極とからなる
表面電極と、
を有してなることを特徴とする。Means for Solving the Problems The solar cell element of the present invention includes an anti-reflection film formed on the light-receiving surface side of a substrate having a PN junction, and an anti-reflection film that penetrates the anti-reflection film and connects to the substrate by firing. Grid electrodes are formed by firing a metal paste material that can obtain electrical contact, and grid electrodes are formed by firing a metal paste material that does not penetrate the anti-reflection film and cannot obtain good electrical contact with the substrate. and a main electrode electrically connecting the grid electrode formed by the grid electrode.
作 用
本発明によれば、基板と良好な電気的コンタク
トを得ている電極部分が小さくできるため、電極
部での表面再結合速度が従来のものよりも小さく
なり、これによつて開放電圧を大きくすることが
できる。また基板と電気コンタクトを得ていない
電極は、曲線因子を低下させない効果をもち、し
たがつて太陽電池素子の変換効率を大幅に改善す
ることができる。Effects According to the present invention, since the electrode portion that has good electrical contact with the substrate can be made smaller, the surface recombination rate at the electrode portion is lower than that of the conventional method, thereby reducing the open circuit voltage. It can be made larger. Furthermore, the electrodes that are not in electrical contact with the substrate have the effect of not reducing the fill factor, and therefore can significantly improve the conversion efficiency of the solar cell element.
実施例
第１図を参照して、本発明に従う太陽電池素子
１０の製造工程を説明する。まず第１図１で示さ
れるＰ型シリコン基板１１の表面をフツ硝酸で処
理し、表面ダメージ層を除去する。次に、POCl3
の気相拡散により、Ｐ型シリコン基板１１の全表
面に、第１図２で示されるようにN+層１２を形
成する。次に、N+層１２の表面をフツ酸で洗浄
した後、CVD（Chemical Vapour Deposition）
法によつて、第１図３で示されるように受光面側
にTiO2から成る反射防止膜１３を形成する。次
に、反射防止膜１３上に、第１図４で示されるよ
うにレジストインク層１４を印刷し、次に、第１
図５で示されるようにフツ硝酸でケミカルエツチ
ングして接合分離を行ない、溶剤にてレジストイ
ンク層１４を剥離する。EXAMPLE With reference to FIG. 1, the manufacturing process of a solar cell element 10 according to the present invention will be described. First, the surface of the P-type silicon substrate 11 shown in FIG. 1 is treated with hydrofluoric nitric acid to remove the surface damage layer. Then POCl3
By vapor phase diffusion, an N + layer 12 is formed on the entire surface of the P-type silicon substrate 11, as shown in FIG. Next, after cleaning the surface of the N + layer 12 with hydrofluoric acid, CVD (Chemical Vapor Deposition)
As shown in FIG. 3, an antireflection film 13 made of TiO 2 is formed on the light-receiving surface side by a method. Next, a resist ink layer 14 is printed on the antireflection film 13 as shown in FIG.
As shown in FIG. 5, bonding and separation is performed by chemical etching with hydrofluoric nitric acid, and the resist ink layer 14 is peeled off with a solvent.
次に、第１図６で示さるようにＰ型シリコン基
板１１の受光面とは反対側の背面に、Alを数％
混入させた銀ペースト層１５を印刷によつて形成
し、乾燥させる。この銀ペースト層１５は、太陽
電池素子１０の背面電極となる。 Next, as shown in FIG.
The mixed silver paste layer 15 is formed by printing and dried. This silver paste layer 15 becomes the back electrode of the solar cell element 10.
次に、第１図７で示されるようにＰ型シリコン
基板１１の受光面側に、印刷によつてグリツド電
極となる銀ペースト層１６をパターン形成し、乾
燥させる。この銀ペースト層１６のパターンは、
第２図で示されるようにストライプ形状である。
銀ペースト層１６としては、反射防止膜１３を貫
通して、シリコン基板１１と良好な電気的コンタ
クトを得るような材料、たとえばリンまたはリン
系化合物を銀ペーストに対し、0.05〜0.3w／ｏで
ドープした、いわゆるフアイアースルー用銀ペー
ストが好適である。 Next, as shown in FIG. 1, a pattern of a silver paste layer 16 that will become a grid electrode is formed on the light-receiving surface side of the P-type silicon substrate 11 by printing, and the pattern is dried. The pattern of this silver paste layer 16 is
As shown in FIG. 2, it has a striped shape.
For the silver paste layer 16, a material that penetrates the antireflection film 13 and provides good electrical contact with the silicon substrate 11, such as phosphorus or a phosphorus compound, is added to the silver paste at a rate of 0.05 to 0.3 w/o. Doped, so-called fire-through silver pastes are preferred.
次に、銀ペースト層１６と同様、第１図８で示
されるように、印刷によつて主電極となる銀ペー
スト層１７をパターン形成し、乾燥させる。この
銀ペースト層１７のパターンは、第３図で示され
るように第１の銀ペースト層１６と直交する二本
のラインである。銀ペースト層１７としては、反
射防止膜１３を貫通せず、シリコン基板１１との
電気的コンタクト性が悪い材料、たとえば銀パウ
ダーとガラスフリツト、樹脂、溶剤などを単に混
ぜただけの銀ペーストが用いられる。 Next, similarly to the silver paste layer 16, as shown in FIG. 1, a pattern of the silver paste layer 17 which will become the main electrode is formed by printing and dried. The pattern of this silver paste layer 17 is two lines perpendicular to the first silver paste layer 16, as shown in FIG. As the silver paste layer 17, a material that does not penetrate the antireflection film 13 and has poor electrical contact with the silicon substrate 11, such as a silver paste simply mixed with silver powder, glass frit, resin, solvent, etc., is used. .
その後、700℃で焼成することにより、第１図
９で示されるように表面電極および背面電極が形
成され、デイツプ半田付けによつて半田を表面電
極上および背面電極上に被覆する。こうして第４
図で示される表面電極パターンを有する太陽電池
素子を得ることができる。 Thereafter, by baking at 700° C., a front electrode and a back electrode are formed as shown in FIG. 1, and solder is coated on the front electrode and the back electrode by dip soldering. Thus the fourth
A solar cell element having the surface electrode pattern shown in the figure can be obtained.
このように、太陽電池素子１０の表面電極形成
用の銀ペーストとして、反射防止膜１３を貫通
し、かつシリコン基板１１と良好なる電均的コン
タクトを得ることのできるペーストと、シリコン
基板１１と良好な電気的コンタクトを得ることが
できないペーストとを併用することにより、表面
電極とシリコン基板１１との接触面積を低減さ
せ、電極部での表面再結合速度を低くさせること
ができる。これによつて開放電圧を大きくするこ
とができる。またシリコン基板１１と電気的コン
タクトを得ていない主電極である銀ペースト層１
７は、曲線因子を低下させない効果をもち、した
がつて本件太陽電池素子１０の変換効率を大幅に
改善することができる。 In this way, as the silver paste for forming the surface electrode of the solar cell element 10, a paste that can penetrate the antireflection film 13 and obtain good electrical contact with the silicon substrate 11, and a silver paste that has good electrical contact with the silicon substrate 11 can be used. By using the paste in combination with a paste that cannot obtain a good electrical contact, the contact area between the surface electrode and the silicon substrate 11 can be reduced, and the surface recombination rate at the electrode portion can be lowered. This allows the open circuit voltage to be increased. Also, the silver paste layer 1 which is the main electrode which is not in electrical contact with the silicon substrate 11
7 has the effect of not reducing the fill factor, and therefore can significantly improve the conversion efficiency of the solar cell element 10 of the present invention.
本発明の他の実施例として、グリツド電極を被
線状にすることにより、接触面積をさらに低減さ
せ、出力を向上させることも可能である。この場
合、主電極のパターン形状を第５図示のようにす
ればよい。 In another embodiment of the present invention, the grid electrode may be wire-covered to further reduce the contact area and improve the output. In this case, the pattern shape of the main electrode may be made as shown in FIG.
前記実施例では、いわゆるコンベンシヨナル型
の太陽電池素子について説明したが、その他たと
えばBSF型の太陽電池素子や、電極表面がテク
スチヤー処理されている太陽電池素子などについ
ても同様のプロセスで作製できることはいうまで
もない。 In the above example, a so-called conventional type solar cell element was explained, but it is also possible to fabricate other types of solar cell elements, such as a BSF type solar cell element or a solar cell element whose electrode surface is textured, using the same process. Not even.
効 果
以上のように本考案によれば、基板と良好な電
気的コンタクトを得ている電極部分が小さくでき
るため、電極部での表面再結合速度が従来のもの
よりも小さくなり、これによつて開放電圧を大き
くすることができる。また基板と電気的コンタク
トを得ていない電極は、曲線因子を低下させない
効果をもち、したがつて太陽電池素子の変換効率
を大幅に改善することができる。Effects As described above, according to the present invention, the electrode portion that has good electrical contact with the substrate can be made smaller, so the surface recombination rate at the electrode portion is lower than that of the conventional method. Therefore, the open circuit voltage can be increased. Furthermore, the electrodes that are not in electrical contact with the substrate have the effect of not reducing the fill factor, and therefore can significantly improve the conversion efficiency of the solar cell element.
第１図は本発明に従う太陽電池素子１０の製造
工程を説明するための図、第２図はグリツド電極
となる銀ペースト層１６のパターンを示す図、第
３図は主電極となる銀ペースト層１７のパターン
を示す図、第４図は表面電極パターンを示す図、
第５図は先行技術を説明するための図である。
１０…太陽電池、１１…シリコン基板、１３…
反射防止膜、１５，１６，１７…銀ペースト層。
FIG. 1 is a diagram for explaining the manufacturing process of a solar cell element 10 according to the present invention, FIG. 2 is a diagram showing a pattern of a silver paste layer 16 that becomes a grid electrode, and FIG. 3 is a diagram of a silver paste layer that becomes a main electrode. FIG. 4 is a diagram showing a surface electrode pattern,
FIG. 5 is a diagram for explaining the prior art. 10...Solar cell, 11...Silicon substrate, 13...
Antireflection film, 15, 16, 17...silver paste layer.
Claims (1)
た反射防止膜と、 焼成により前記反射防止膜を貫通して前記基板
と良好なる電気的コンタクトを得ることのできる
金属ペースト材料を焼成して形成されるグリツド
電極と、焼成で前記反射防止膜を貫通せず、基板
と良好なる電気的コンタクトを得ることのできな
い金属ペースト材料を焼成して形成される前記グ
リツド電極を電気的に連結する主電極とからなる
表面電極と、 を有してなることを特徴とする太陽電池素子。[Scope of Claims] 1. An antireflection film formed on the light-receiving surface side of a substrate having a PN junction, and a metal paste that can penetrate the antireflection film and obtain good electrical contact with the substrate by firing. The grid electrode is formed by firing a material, and the grid electrode is formed by firing a metal paste material that does not penetrate the anti-reflection film and cannot obtain good electrical contact with the substrate upon firing. 1. A solar cell element comprising: a surface electrode comprising a main electrode which is electrically connected to the main electrode;
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60297463A JPS62156881A (en) | 1985-12-28 | 1985-12-28 | Solar battery device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60297463A JPS62156881A (en) | 1985-12-28 | 1985-12-28 | Solar battery device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62156881A JPS62156881A (en) | 1987-07-11 |
| JPH0446468B2 true JPH0446468B2 (en) | 1992-07-30 |
Family
ID=17846817
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60297463A Granted JPS62156881A (en) | 1985-12-28 | 1985-12-28 | Solar battery device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62156881A (en) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2706113B2 (en) * | 1988-11-25 | 1998-01-28 | 工業技術院長 | Photoelectric conversion element |
| DE69224965T2 (en) * | 1991-06-11 | 1998-10-29 | Ase Americas Inc | IMPROVED SOLAR CELL AND METHOD FOR THEIR PRODUCTION |
| EP0729189A1 (en) * | 1995-02-21 | 1996-08-28 | Interuniversitair Micro-Elektronica Centrum Vzw | Method of preparing solar cells and products obtained thereof |
| JP4121928B2 (en) | 2003-10-08 | 2008-07-23 | シャープ株式会社 | Manufacturing method of solar cell |
| JP2008205137A (en) * | 2007-02-19 | 2008-09-04 | Sanyo Electric Co Ltd | Solar cell and solar cell module |
| EP2302689A4 (en) * | 2008-07-03 | 2012-01-18 | Mitsubishi Electric Corp | Photovoltaic system and manufacturing method thereof |
| WO2010123980A1 (en) * | 2009-04-22 | 2010-10-28 | Tetrasun, Inc. | Localized metal contacts by localized laser assisted conversion of functional films in solar cells |
| JP5788794B2 (en) * | 2009-07-09 | 2015-10-07 | 株式会社シンク・ラボラトリー | Manufacturing method of solar cell |
| JP5375414B2 (en) * | 2009-07-31 | 2013-12-25 | 信越化学工業株式会社 | Solar cell and manufacturing method thereof |
| CN102479883A (en) * | 2009-11-27 | 2012-05-30 | 无锡尚德太阳能电力有限公司 | Method for forming positive electrode of solar cell |
| WO2011095968A2 (en) * | 2010-02-03 | 2011-08-11 | Xjet Ltd. | Fabrication of contacts for semiconductor substrates |
| KR20120100698A (en) * | 2011-03-02 | 2012-09-12 | 한국전자통신연구원 | Conducting composition, silicon solar cell comprising the conducting composition, and its preparation for the same |
| US20120222738A1 (en) * | 2011-03-02 | 2012-09-06 | Electronics And Telecommunications Research Institute | Conductive composition, silicon solar cell including the same, and manufacturing method thereof |
| JP2013149815A (en) * | 2012-01-20 | 2013-08-01 | Shin Etsu Chem Co Ltd | Solar battery and method of manufacturing the same |
| JP5908763B2 (en) * | 2012-03-19 | 2016-04-26 | 京セラ株式会社 | Photoelectric conversion element and method for producing photoelectric conversion element |
-
1985
- 1985-12-28 JP JP60297463A patent/JPS62156881A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62156881A (en) | 1987-07-11 |
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