JPH0441513B2 - - Google Patents

Info

Publication number
JPH0441513B2
JPH0441513B2 JP57218930A JP21893082A JPH0441513B2 JP H0441513 B2 JPH0441513 B2 JP H0441513B2 JP 57218930 A JP57218930 A JP 57218930A JP 21893082 A JP21893082 A JP 21893082A JP H0441513 B2 JPH0441513 B2 JP H0441513B2
Authority
JP
Japan
Prior art keywords
manufacturing
implantation
gate
sit
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57218930A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59108366A (ja
Inventor
Junichi Nishizawa
Sohee Suzuki
Mitsuru Ikeda
Hideki Muto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP57218930A priority Critical patent/JPS59108366A/ja
Priority to US06/561,443 priority patent/US4596605A/en
Publication of JPS59108366A publication Critical patent/JPS59108366A/ja
Publication of JPH0441513B2 publication Critical patent/JPH0441513B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/012—Manufacture or treatment of static induction transistors [SIT], e.g. permeable base transistors [PBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/202—FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/285—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices having PN homojunction gates
    • H10F30/2863—Field-effect phototransistors having PN homojunction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP57218930A 1982-12-14 1982-12-14 静電誘導トランジスタの製造方法 Granted JPS59108366A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP57218930A JPS59108366A (ja) 1982-12-14 1982-12-14 静電誘導トランジスタの製造方法
US06/561,443 US4596605A (en) 1982-12-14 1983-12-14 Fabrication process of static induction transistor and solid-state image sensor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57218930A JPS59108366A (ja) 1982-12-14 1982-12-14 静電誘導トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS59108366A JPS59108366A (ja) 1984-06-22
JPH0441513B2 true JPH0441513B2 (https=) 1992-07-08

Family

ID=16727544

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57218930A Granted JPS59108366A (ja) 1982-12-14 1982-12-14 静電誘導トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS59108366A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2666945B2 (ja) * 1988-02-08 1997-10-22 株式会社東芝 半導体装置の製造方法
US9368582B2 (en) * 2013-11-04 2016-06-14 Avogy, Inc. High power gallium nitride electronics using miscut substrates

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS495572A (https=) * 1972-05-04 1974-01-18
JPS50139669A (https=) * 1974-04-24 1975-11-08
JPS5329988A (en) * 1976-08-31 1978-03-20 Kureha Chem Ind Co Ltd Cultivation of basidiomycetes
JPS53118982A (en) * 1977-03-28 1978-10-17 Seiko Instr & Electronics Ltd Electrostatic induction transistor logic element
JPS55128823A (en) * 1979-03-28 1980-10-06 Hitachi Ltd Semiconductor device and manufacture thereof

Also Published As

Publication number Publication date
JPS59108366A (ja) 1984-06-22

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