JPH0441505B2 - - Google Patents
Info
- Publication number
- JPH0441505B2 JPH0441505B2 JP59015801A JP1580184A JPH0441505B2 JP H0441505 B2 JPH0441505 B2 JP H0441505B2 JP 59015801 A JP59015801 A JP 59015801A JP 1580184 A JP1580184 A JP 1580184A JP H0441505 B2 JPH0441505 B2 JP H0441505B2
- Authority
- JP
- Japan
- Prior art keywords
- mos transistor
- conductivity type
- semiconductor
- drain
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 39
- 239000012535 impurity Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000010354 integration Effects 0.000 description 6
- 230000000630 rising effect Effects 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 102100030393 G-patch domain and KOW motifs-containing protein Human genes 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Logic Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59015801A JPS60160651A (ja) | 1984-01-31 | 1984-01-31 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59015801A JPS60160651A (ja) | 1984-01-31 | 1984-01-31 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60160651A JPS60160651A (ja) | 1985-08-22 |
| JPH0441505B2 true JPH0441505B2 (fr) | 1992-07-08 |
Family
ID=11898938
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59015801A Granted JPS60160651A (ja) | 1984-01-31 | 1984-01-31 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60160651A (fr) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6424626A (en) * | 1987-07-21 | 1989-01-26 | Nippon Telegraph & Telephone | Digital control type variable capacitor device |
| JPH02168666A (ja) * | 1988-09-29 | 1990-06-28 | Mitsubishi Electric Corp | 相補型半導体装置とその製造方法 |
| US5181094A (en) * | 1988-09-29 | 1993-01-19 | Mitsubishi Denki Kabushiki Kaisha | Complementary semiconductor device having improved device isolating region |
| US5021858A (en) * | 1990-05-25 | 1991-06-04 | Hall John H | Compound modulated integrated transistor structure |
| JPH0492913U (fr) * | 1990-12-27 | 1992-08-12 | ||
| EP1699084B1 (fr) | 1995-04-12 | 2011-05-25 | Fuji Electric Systems Co., Ltd. | Circuit intégré à haute tension, structure terminale de jonction à haute tension et transistor MIS à haute tension |
| JP3808116B2 (ja) * | 1995-04-12 | 2006-08-09 | 富士電機デバイステクノロジー株式会社 | 高耐圧ｉｃ |
-
1984
- 1984-01-31 JP JP59015801A patent/JPS60160651A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60160651A (ja) | 1985-08-22 |
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