JPH0441494B2 - - Google Patents

Info

Publication number
JPH0441494B2
JPH0441494B2 JP57159807A JP15980782A JPH0441494B2 JP H0441494 B2 JPH0441494 B2 JP H0441494B2 JP 57159807 A JP57159807 A JP 57159807A JP 15980782 A JP15980782 A JP 15980782A JP H0441494 B2 JPH0441494 B2 JP H0441494B2
Authority
JP
Japan
Prior art keywords
layer
crystal semiconductor
metal layer
semiconductor layer
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57159807A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5948959A (ja
Inventor
Kyohiro Kawasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP57159807A priority Critical patent/JPS5948959A/ja
Publication of JPS5948959A publication Critical patent/JPS5948959A/ja
Publication of JPH0441494B2 publication Critical patent/JPH0441494B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Liquid Crystal (AREA)
JP57159807A 1982-09-14 1982-09-14 絶縁ゲ−ト型トランジスタおよびその製造方法 Granted JPS5948959A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57159807A JPS5948959A (ja) 1982-09-14 1982-09-14 絶縁ゲ−ト型トランジスタおよびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57159807A JPS5948959A (ja) 1982-09-14 1982-09-14 絶縁ゲ−ト型トランジスタおよびその製造方法

Publications (2)

Publication Number Publication Date
JPS5948959A JPS5948959A (ja) 1984-03-21
JPH0441494B2 true JPH0441494B2 (enrdf_load_stackoverflow) 1992-07-08

Family

ID=15701679

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57159807A Granted JPS5948959A (ja) 1982-09-14 1982-09-14 絶縁ゲ−ト型トランジスタおよびその製造方法

Country Status (1)

Country Link
JP (1) JPS5948959A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS5948959A (ja) 1984-03-21

Similar Documents

Publication Publication Date Title
US4924279A (en) Thin film transistor
US6509614B1 (en) TFT-LCD formed with four masking steps
US6362028B1 (en) Method for fabricating TFT array and devices formed
EP0473988A1 (en) Method of fabricating a thin film transistor having amorphous/polycrystalline semiconductor channel region
JPH0936380A (ja) 多結晶シリコン薄膜トランジスタおよびその製造方法
JPH08236779A (ja) 基板の表面にアレイ回路を形成する方法
US5693567A (en) Separately etching insulating layer for contacts within array and for peripheral pads
JPH08236780A (ja) 製 品
JPH0542831B2 (enrdf_load_stackoverflow)
JPH06167722A (ja) アクティブマトリクス基板及びその製造方法
JPS60160169A (ja) Ｍｏｓトランジスタおよびその製造方法
US6656776B2 (en) Thin film transistor and fabricating method thereof
GB2064866A (en) Field effect semiconductor device
JPS6230379A (ja) 薄膜トランジスタ
JPH08122813A (ja) 液晶表示素子およびその製造方法
JPH0441494B2 (enrdf_load_stackoverflow)
JPS6159873A (ja) 薄膜電界効果トランジスタおよびその製造方法
JPH0441492B2 (enrdf_load_stackoverflow)
JPH0682834A (ja) アクティブマトリクスパネル
JP3238072B2 (ja) 薄膜トランジスタ
JPH0472769A (ja) 薄膜トランジスタ
JPH06275830A (ja) アキュムレーション型多結晶シリコン薄膜トランジスタ
JP2934717B2 (ja) マトリクス回路駆動装置およびその製造方法
JPS59124165A (ja) 絶縁ゲ−ト型トランジスタおよびその製造方法
JPH03790B2 (enrdf_load_stackoverflow)