JPH0542831B2 - - Google Patents

Info

Publication number
JPH0542831B2
JPH0542831B2 JP57119460A JP11946082A JPH0542831B2 JP H0542831 B2 JPH0542831 B2 JP H0542831B2 JP 57119460 A JP57119460 A JP 57119460A JP 11946082 A JP11946082 A JP 11946082A JP H0542831 B2 JPH0542831 B2 JP H0542831B2
Authority
JP
Japan
Prior art keywords
gate
bus
layer
electrode
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57119460A
Other languages
English (en)
Japanese (ja)
Other versions
JPS599941A (ja
Inventor
Sadakichi Hotsuta
Kyohiro Kawasaki
Seiichi Nagata
Hiroki Saito
Shigenobu Shirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP57119460A priority Critical patent/JPS599941A/ja
Publication of JPS599941A publication Critical patent/JPS599941A/ja
Publication of JPH0542831B2 publication Critical patent/JPH0542831B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP57119460A 1982-07-08 1982-07-08 薄膜半導体装置の製造方法 Granted JPS599941A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57119460A JPS599941A (ja) 1982-07-08 1982-07-08 薄膜半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57119460A JPS599941A (ja) 1982-07-08 1982-07-08 薄膜半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS599941A JPS599941A (ja) 1984-01-19
JPH0542831B2 true JPH0542831B2 (enrdf_load_stackoverflow) 1993-06-29

Family

ID=14761903

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57119460A Granted JPS599941A (ja) 1982-07-08 1982-07-08 薄膜半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS599941A (enrdf_load_stackoverflow)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60189265A (ja) * 1984-03-08 1985-09-26 Matsushita Electric Ind Co Ltd 薄膜電界効果型半導体装置
JPS60201379A (ja) * 1984-03-26 1985-10-11 キヤノン株式会社 薄膜トランジスタ基板及びその製造方法
JPS60261174A (ja) * 1984-06-07 1985-12-24 Nippon Soken Inc マトリツクスアレ−
JPH0650777B2 (ja) * 1984-06-15 1994-06-29 セイコー電子工業株式会社 アクテイブマトリクス表示装置の基板
JPS6144468A (ja) * 1984-08-09 1986-03-04 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP2566130B2 (ja) * 1984-08-28 1996-12-25 セイコー電子工業株式会社 アクテイブマトリクス表示装置用基板の製造方法
JPS61116872A (ja) * 1984-11-13 1986-06-04 Sharp Corp 薄膜トランジスタ
JPS62126677A (ja) * 1985-11-27 1987-06-08 Sharp Corp 薄膜トランジスタアレイ
JPS62179090A (ja) * 1986-01-31 1987-08-06 古野電気株式会社 記憶カ−ドを利用したカ−ドの不正使用防止方法
JPS6319876A (ja) * 1986-07-11 1988-01-27 Fuji Xerox Co Ltd 薄膜トランジスタ装置
JPS6422066A (en) * 1987-07-17 1989-01-25 Toshiba Corp Thin film transistor
DE3852089T2 (de) 1987-11-16 1995-06-01 Konishiroku Photo Ind Photographisches lichtempfindliches Silberhalogenidmaterial und Verfahren zu dessen Herstellung.
JP2771074B2 (ja) * 1992-07-20 1998-07-02 キヤノン株式会社 液晶表示装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56140321A (en) * 1980-04-01 1981-11-02 Canon Inc Display device
JPS58190042A (ja) * 1982-04-28 1983-11-05 Toshiba Corp 薄膜半導体装置
JPS596578A (ja) * 1982-07-02 1984-01-13 Sanyo Electric Co Ltd 電界効果型トランジスタアレイ

Also Published As

Publication number Publication date
JPS599941A (ja) 1984-01-19

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