JPH04395B2 - - Google Patents

Info

Publication number
JPH04395B2
JPH04395B2 JP57161470A JP16147082A JPH04395B2 JP H04395 B2 JPH04395 B2 JP H04395B2 JP 57161470 A JP57161470 A JP 57161470A JP 16147082 A JP16147082 A JP 16147082A JP H04395 B2 JPH04395 B2 JP H04395B2
Authority
JP
Japan
Prior art keywords
conductive film
position detector
light beam
conductive films
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57161470A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5950579A (ja
Inventor
Shigenori Torihata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Komatsu Ltd
Original Assignee
Komatsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Ltd filed Critical Komatsu Ltd
Priority to JP57161470A priority Critical patent/JPS5950579A/ja
Publication of JPS5950579A publication Critical patent/JPS5950579A/ja
Publication of JPH04395B2 publication Critical patent/JPH04395B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H10F77/957—Circuit arrangements for devices having potential barriers for position-sensitive photodetectors, e.g. lateral-effect photodiodes or quadrant photodiodes

Landscapes

  • Light Receiving Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
JP57161470A 1982-09-16 1982-09-16 半導体光位置検出器 Granted JPS5950579A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57161470A JPS5950579A (ja) 1982-09-16 1982-09-16 半導体光位置検出器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57161470A JPS5950579A (ja) 1982-09-16 1982-09-16 半導体光位置検出器

Publications (2)

Publication Number Publication Date
JPS5950579A JPS5950579A (ja) 1984-03-23
JPH04395B2 true JPH04395B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-01-07

Family

ID=15735702

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57161470A Granted JPS5950579A (ja) 1982-09-16 1982-09-16 半導体光位置検出器

Country Status (1)

Country Link
JP (1) JPS5950579A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5956778A (ja) * 1982-09-27 1984-04-02 Toshiba Corp 半導体位置検出器
JPS5984587A (ja) * 1982-11-08 1984-05-16 Anritsu Corp 位置センサ
JPH0770754B2 (ja) * 1985-03-04 1995-07-31 株式会社小松製作所 半導体光位置検出器における抵抗層の形成方法
US4761547A (en) * 1985-03-18 1988-08-02 Kabushiki Kaisha Komatsu Seisakusho Semiconductor photoelectric conversion device for light incident position detection
JPH0691276B2 (ja) * 1985-03-22 1994-11-14 株式会社小松製作所 半導体光位置検出器における集電電極の形成方法
JPH0691277B2 (ja) * 1985-04-03 1994-11-14 株式会社小松製作所 半導体位置検出器
JPH063462Y2 (ja) * 1985-06-08 1994-01-26 株式会社小松製作所 座標入力装置
JPH0691278B2 (ja) * 1986-03-04 1994-11-14 浜松ホトニクス株式会社 半導体位置検出装置
JP2583094B2 (ja) * 1988-03-07 1997-02-19 鐘淵化学工業株式会社 半導体光位置検出器
JPH0274838A (ja) * 1988-09-09 1990-03-14 Komatsu Ltd ３軸力センサ
JPH0294863U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1989-01-11 1990-07-27
FR2763122B1 (fr) * 1997-05-09 1999-07-16 Vishay Sa Dispositif de mesure de position et de deplacement sans contact
EP2936052B1 (en) * 2012-12-19 2021-04-28 Basf Se Detector for optically detecting at least one object
US9989623B2 (en) 2013-06-13 2018-06-05 Basf Se Detector for determining a longitudinal coordinate of an object via an intensity distribution of illuminated pixels
JP6440696B2 (ja) 2013-06-13 2018-12-19 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 少なくとも１つの物体の方位を光学的に検出する検出器
AU2014310703B2 (en) 2013-08-19 2018-09-27 Basf Se Optical detector
JP6660931B2 (ja) 2014-07-08 2020-03-11 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 少なくとも１つの物体の位置を決定するための検出器
CN106716059B (zh) 2014-09-29 2020-03-13 巴斯夫欧洲公司 用于光学确定至少一个对象的位置的检测器
EP3230841B1 (en) 2014-12-09 2019-07-03 Basf Se Optical detector
KR102496245B1 (ko) 2015-01-30 2023-02-06 트리나미엑스 게엠베하 하나 이상의 물체의 광학적 검출을 위한 검출기
EP3325917B1 (en) 2015-07-17 2020-02-26 trinamiX GmbH Detector for optically detecting at least one object
EP3350988B1 (en) 2015-09-14 2019-08-07 trinamiX GmbH 3d camera
CN109564927B (zh) 2016-07-29 2023-06-20 特里纳米克斯股份有限公司 光学传感器和用于光学检测的检测器
CN109891265B (zh) 2016-10-25 2023-12-01 特里纳米克斯股份有限公司 用于光学检测至少一个对象的检测器
CN109923372B (zh) 2016-10-25 2021-12-21 特里纳米克斯股份有限公司 采用集成滤波器的红外光学检测器
US10948567B2 (en) 2016-11-17 2021-03-16 Trinamix Gmbh Detector for optically detecting at least one object
US11860292B2 (en) 2016-11-17 2024-01-02 Trinamix Gmbh Detector and methods for authenticating at least one object
WO2018193045A1 (en) 2017-04-20 2018-10-25 Trinamix Gmbh Optical detector
DE102017209498A1 (de) 2017-06-06 2018-12-06 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Sensorbauelement und Verfahren zum Herstellen desselben
KR102568462B1 (ko) 2017-06-26 2023-08-21 트리나미엑스 게엠베하 적어도 하나의 대상체의 위치를 결정하는 검출기

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE368741B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1972-12-01 1974-07-15 Selective Electronic Inc
JPS5587007U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1978-12-12 1980-06-16
US4710891A (en) * 1983-07-27 1987-12-01 American Telephone And Telegraph Company, At&T Bell Laboratories Digital synthesis technique for pulses having predetermined time and frequency domain characteristics

Also Published As

Publication number Publication date
JPS5950579A (ja) 1984-03-23

Similar Documents

Publication Publication Date Title
JPH04395B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CN109768114A (zh) 一种基于石墨烯-半导体异质结的位敏感光电探测器
EP1280207B1 (en) Semiconductor energy detector
JPH0671097B2 (ja) カラ−センサ−
KR20000005121A (ko) Pin형또는nip형층시리즈를갖는3색광센서
JP4571267B2 (ja) 放射線検出器
WO2018054154A1 (zh) 光电探测器及光电探测装置
JPH0550857B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0546709B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
Ryu et al. 24.2: A Novel Amorphous Silicon Phototransistor Array for Name Card Reading
JPH021866Y2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US20240234463A9 (en) Active pixel sensor and method for fabricating an active pixel sensor
JPH021865Y2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH04343276A (ja) 光位置検出装置
JPS6249680A (ja) 半導体位置検出器
JP2672643B2 (ja) 太陽センサ
JPH0521353B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US10128399B1 (en) Lateral-effect position-sensing detector
Cárabe et al. A simple amorphous‐silicon photodetector for two‐dimensional position sensing
JP2596419B2 (ja) 位置検出装置
JPH081961B2 (ja) ビーム位置検出器
US20110079709A1 (en) Wide band sensor
JPH04241458A (ja) 半導体光検出装置
JPH0770754B2 (ja) 半導体光位置検出器における抵抗層の形成方法
JPS63137319A (ja) 位置検出装置