JPH0437578B2 - - Google Patents

Info

Publication number
JPH0437578B2
JPH0437578B2 JP57113132A JP11313282A JPH0437578B2 JP H0437578 B2 JPH0437578 B2 JP H0437578B2 JP 57113132 A JP57113132 A JP 57113132A JP 11313282 A JP11313282 A JP 11313282A JP H0437578 B2 JPH0437578 B2 JP H0437578B2
Authority
JP
Japan
Prior art keywords
upper electrode
gas
gas outlet
opening
semiconductor manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57113132A
Other languages
English (en)
Japanese (ja)
Other versions
JPS594028A (ja
Inventor
Kenji Koyama
Kanetake Takasaki
Masao Sugita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11313282A priority Critical patent/JPS594028A/ja
Publication of JPS594028A publication Critical patent/JPS594028A/ja
Publication of JPH0437578B2 publication Critical patent/JPH0437578B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP11313282A 1982-06-30 1982-06-30 半導体製造装置 Granted JPS594028A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11313282A JPS594028A (ja) 1982-06-30 1982-06-30 半導体製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11313282A JPS594028A (ja) 1982-06-30 1982-06-30 半導体製造装置

Publications (2)

Publication Number Publication Date
JPS594028A JPS594028A (ja) 1984-01-10
JPH0437578B2 true JPH0437578B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-06-19

Family

ID=14604351

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11313282A Granted JPS594028A (ja) 1982-06-30 1982-06-30 半導体製造装置

Country Status (1)

Country Link
JP (1) JPS594028A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6046029A (ja) * 1983-08-24 1985-03-12 Hitachi Ltd 半導体製造装置
JPS6164128A (ja) * 1984-09-05 1986-04-02 Toshiba Corp 試料処理装置
US4590042A (en) * 1984-12-24 1986-05-20 Tegal Corporation Plasma reactor having slotted manifold
JPS61174721A (ja) * 1985-01-30 1986-08-06 Toshiba Corp 平行平板形ドライエツチング装置
JPS62109317A (ja) * 1985-11-08 1987-05-20 Anelva Corp プラズマエツチング装置
US5000113A (en) 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
US4892753A (en) * 1986-12-19 1990-01-09 Applied Materials, Inc. Process for PECVD of silicon oxide using TEOS decomposition
JPH0741153Y2 (ja) * 1987-10-26 1995-09-20 東京応化工業株式会社 試料処理用電極
JPH02114530A (ja) * 1988-10-25 1990-04-26 Mitsubishi Electric Corp 薄膜形成装置
US5091217A (en) * 1989-05-22 1992-02-25 Advanced Semiconductor Materials, Inc. Method for processing wafers in a multi station common chamber reactor
KR100489156B1 (ko) * 1994-01-13 2005-05-17 세이코 엡슨 가부시키가이샤 반도체 장치의 제조 장치
JPH07278851A (ja) * 1994-09-19 1995-10-24 Tokai Carbon Co Ltd プラズマエッチング用電極板とその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5468169A (en) * 1977-11-11 1979-06-01 Hitachi Ltd Plasma processor of capacitor type

Also Published As

Publication number Publication date
JPS594028A (ja) 1984-01-10

Similar Documents

Publication Publication Date Title
US4792378A (en) Gas dispersion disk for use in plasma enhanced chemical vapor deposition reactor
US4820371A (en) Apertured ring for exhausting plasma reactor gases
JP3242166B2 (ja) エッチング装置
US5451290A (en) Gas distribution system
JPH0437578B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US4461237A (en) Plasma reactor for etching and coating substrates
JPH0359573B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP3205878B2 (ja) ドライエッチング装置
JPH0473289B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS6098629A (ja) プラズマ処理装置
EP0140975A1 (en) Reactive ion etching apparatus
US4554047A (en) Downstream apparatus and technique
JPS6353932A (ja) 半導体ウエハ−の薄膜成長装置
JPS6316625A (ja) ドライエツチング用電極
JPH02184022A (ja) Ｃｖｄ電極
JPS62210623A (ja) 気相反応装置用電極
JPH04154117A (ja) 減圧ｃｖｄ装置
JPS60123033A (ja) プラズマ処理装置
JPS6234834B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS6134933A (ja) プラズマ気相成長装置
JP2765371B2 (ja) 成膜処理装置
JPS59172236A (ja) 反応性イオンエツチング装置
JPH0663107B2 (ja) 平行平板型ドライエツチング装置
JPH07201837A (ja) 半導体製造装置
JPH0555150A (ja) マイクロ波プラズマ処理装置