JPH0473289B2 - - Google Patents

Info

Publication number
JPH0473289B2
JPH0473289B2 JP58153258A JP15325883A JPH0473289B2 JP H0473289 B2 JPH0473289 B2 JP H0473289B2 JP 58153258 A JP58153258 A JP 58153258A JP 15325883 A JP15325883 A JP 15325883A JP H0473289 B2 JPH0473289 B2 JP H0473289B2
Authority
JP
Japan
Prior art keywords
dispersion plate
holes
cavity
gas
center
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58153258A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6046029A (ja
Inventor
Norio Nakazato
Ryoji Fukuyama
Yutaka Kakehi
Makoto Nawata
Fumio Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15325883A priority Critical patent/JPS6046029A/ja
Publication of JPS6046029A publication Critical patent/JPS6046029A/ja
Publication of JPH0473289B2 publication Critical patent/JPH0473289B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP15325883A 1983-08-24 1983-08-24 半導体製造装置 Granted JPS6046029A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15325883A JPS6046029A (ja) 1983-08-24 1983-08-24 半導体製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15325883A JPS6046029A (ja) 1983-08-24 1983-08-24 半導体製造装置

Publications (2)

Publication Number Publication Date
JPS6046029A JPS6046029A (ja) 1985-03-12
JPH0473289B2 true JPH0473289B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-11-20

Family

ID=15558518

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15325883A Granted JPS6046029A (ja) 1983-08-24 1983-08-24 半導体製造装置

Country Status (1)

Country Link
JP (1) JPS6046029A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62169418A (ja) * 1986-01-22 1987-07-25 Toshiba Corp ドライエツチング装置
JPH0693452B2 (ja) * 1986-01-29 1994-11-16 株式会社日立製作所 枚葉式薄膜形成法および薄膜形成装置
JPS63237530A (ja) * 1987-03-26 1988-10-04 Toshiba Corp ドライエツチング方法
JPH0245629U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1988-09-22 1990-03-29
JPH0245628U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1988-09-22 1990-03-29
US7164095B2 (en) 2004-07-07 2007-01-16 Noritsu Koki Co., Ltd. Microwave plasma nozzle with enhanced plume stability and heating efficiency
TW200742506A (en) 2006-02-17 2007-11-01 Noritsu Koki Co Ltd Plasma generation apparatus and work process apparatus
JP4620015B2 (ja) * 2006-08-30 2011-01-26 株式会社サイアン プラズマ発生装置およびそれを用いるワーク処理装置
CN101488446B (zh) * 2008-01-14 2010-09-01 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体处理设备及其气体分配装置
US7921804B2 (en) 2008-12-08 2011-04-12 Amarante Technologies, Inc. Plasma generating nozzle having impedance control mechanism
WO2016157317A1 (ja) * 2015-03-27 2016-10-06 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および記録媒体
KR102416568B1 (ko) * 2017-08-14 2022-07-04 삼성디스플레이 주식회사 금속 산화막 형성 방법 및 플라즈마 강화 화학기상증착 장치
CN113451168A (zh) * 2020-04-14 2021-09-28 重庆康佳光电技术研究院有限公司 一种干蚀刻气体控制系统

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5948138B2 (ja) * 1980-05-28 1984-11-24 三洋電機株式会社 アモルフアス半導体膜の製造方法
JPS594028A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd 半導体製造装置

Also Published As

Publication number Publication date
JPS6046029A (ja) 1985-03-12

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