JPH04338927A - Color television receiver - Google Patents

Abstract

PURPOSE:To offer the color television receiver which can make a multi level display. CONSTITUTION:The multilevel display is made not on a matrix liquid crystal display for displaying, but by varying the color and intensity of light incident on a driving panel with time. Namely, the liquid crystal display and two kinds of 1st and 2nd devices 80 and 81 are prepared and the multi level display is made not on the matrix liquid crystal device for displaying, but by varying the color and intensity of the light incident on the driving panel with time by using a 2nd liquid crystal device 81 as a shutter.

Description

[Detailed description of the invention]

0001

[Industrial Application Field] The present invention specifically relates to video signals sent from terrestrial television stations, satellite television stations, cable television stations, or individually installed television video recording devices (video decks, laser discs, magneto-optical discs, etc.). We propose a device to display the information.

0002

[Prior Art] Conventionally, it has been used as a device for specifically displaying video signals sent from a terrestrial television station, a satellite television station, a cable television station, or an individually installed television video recording device (video deck, laser disk, magneto-optical disk, etc.). The method used was to emit electron beams in a vacuum tube called a cathode ray tube or CRT to cause a phosphor screen to emit light.

[0003] Initially, display bodies with a diagonal size of 12 to 14 inches were widely used, but in recent years, due to the demands of the world, displays with a diagonal size of not only 20 inches but even well over 30 inches have appeared.

[0004] In the case of a diagonal of 30 inches, the depth is also approximately 30 inches, and the thickness of the glass forming it has also come to exceed 1 cm in order to maintain strength. In addition, as another device, a method has been proposed in which a high-brightness cathode ray tube is enlarged and displayed on a screen using an optical system, and is used for objects with large display areas. The outline of its configuration is shown in FIG.

[0005]

Problems to be Solved by the Invention In the case of a television receiver using a cathode ray tube, if the display surface exceeds 30 inches, the total weight will well exceed 100 kg. To store heavy items over 100 kg in a typical household,
There are some things that are difficult to do unless you limit the location. In addition, its weight makes it difficult to move it manually when the layout needs to be changed, which has been an obstacle to its widespread use in general households.

[0006] In order to solve this problem, a projection type television receiver has been proposed, but there is a limit to the brightness improvement of the high-brightness cathode ray tube that is the basis for it, and the brightness itself on the enlarged screen is extremely low. It had become. As a result, not only was the screen dark, but because it was magnified by an optical system, the contrast ratio when viewed from the front was high, but the contrast ratio from diagonal directions was extremely inferior to that of the cathode ray tube system. However, in terms of weight, this method is only about 50% of the weight of the cathode ray tube method, so it has become a solution to the problem. Projection television 20 in Figure 4
1 includes a cathode ray tube or liquid crystal display device 204, a tuner 205, an optical system 203, a reflector 202, and a screen 206.

[0007] In recent years, examples have been frequently proposed in which a thin film transistor type liquid crystal panel using amorphous silicon is used as the display body instead of a cathode ray tube. It weighs about 30% less than the cathode ray tube system, which is one of the factors that helped it become popular in households. However, the display brightness is still lower than that of the cathode ray tube system, and studies are underway to increase the intensity of the light source. The reality is that a satisfactory display cannot be achieved due to a decrease in the resistance value.

There is also a display using ferroelectric liquid crystal proposed by Clark Lagarwal et al. Figure 2 shows its conceptual diagram. Ferroelectric liquid crystals have spontaneous polarization, so if the thickness of the liquid crystal layer is thinned until the helix unwinds, a stable interfacial state (SSFLC) is created, and once an electric field is applied, even if the electric field is removed, no transmission occurs. Alternatively, it was possible to obtain a memory effect in which the non-transparent state continues. By utilizing this memory state, static driving similar to a TFT active matrix LCD is possible.

However, in the case of ferroelectric liquid crystals, transmission,
Because it only has two stable states, non-transparent, it has difficulty displaying gradations as information becomes more diverse. Particularly when these liquid crystal electro-optical devices are used for video purposes, gradation display is essential. As a method to solve this problem, gradation is displayed by dividing a unit pixel into multiple areas and configuring it into a plurality of dots. For example, it has been devised to divide a unit pixel in an area ratio of 1:2:4 and obtain eight gradations by combining ON/OFF of the divided pixels. Figures 3a and 3b show the electrode structure for two-gradation display and the electrode structure for eight-gradation display.

However, since three data signals must be added to each unit pixel, the external circuit becomes extremely complex, resulting in increased costs and reduced yield when connecting the external circuit. Ta. Furthermore,
Since an insulating region between electrodes is required for division, the aperture ratio has decreased. For example, when considering a unit pixel with a pitch of 250 μm and a gap of 25 μm, it can be seen that the aperture ratio without division is 81%, but when divided with the same gap, it decreases to 63%. Furthermore, the thinnest electrode (1
The width of 03) is 25 μm in the case of the above pitch and gap.
It becomes. 1000 x 100 as a liquid crystal display device
Even if a 0 pixel is manufactured using ITO with a sheet resistance of 5Ω or less, the electrode in the data direction will have a resistance of about 50kΩ from end to end. In this case,
The electric field strength applied to the liquid crystal at both ends of the electrode is different, making it impossible to display uniformly, and this lacks practicality. Therefore, there has been a need for a means to more realistically control the gradation.

[0011]

[Means for Solving the Problems] The present invention does not allow a matrix liquid crystal device for display to display gradations, but rather displays gradations by temporally changing the color and intensity of light incident on a drive panel. This makes it possible to display the scale. In other words, two types of liquid crystal devices, the first and second types, are prepared, and instead of using the matrix liquid crystal device for display to display gradations, the second liquid crystal displays the color and intensity of the light incident on the drive panel. Using the device as a shutter, it is possible to display gradation by changing it over time. Furthermore, as another method, the second device may not be one that changes the transmittance but one that changes the reflectance.

[0012] In this section, in order to simplify the explanation, an explanation will be given using the intensity of light consisting of 3 bits and the light consisting of 3 colors. As shown in FIG. 1, a liquid crystal composition exhibiting ferroelectricity and the liquid crystal composition are formed by a first substrate having electrodes and leads on the substrate and a second substrate having electrodes and leads on the substrate. A first device 80 sandwiching a means for orienting the ferroelectric material, at least initially, is provided with a first substrate having electrodes and leads on the substrate, and a second substrate having electrodes and leads on the substrate. A second device 81 sandwiching a liquid crystal composition showing a liquid crystal composition and a means for orienting the liquid crystal composition at least initially, is used to display a set of nine screens in color and in gradation. do.

When performed with 9 bits, R (red) G (
It is possible to display up to 8 gradations for each of green), B (blue), and a total of 512 colors. It is assumed that the pixels arranged on the screen have a matrix of 2×2 pixels as shown in FIG.

[0014] The level among the 8 gradations is R from dark to bright.
When GB is R0 to R7, G0 to G7, and B0 to B7, the level of A1 pixel (106) is (R2, G0
, B5), the level of A2 pixel (107) (R5, G7
, B0), the level of B1 pixel (108) (R7, G1
, B3), the level of B2 pixel (109) (R0, G5
, B2), the corresponding pixels of the first device are turned ON/OFF according to the timing shown in FIG. 2, and the average transmittance of the second device is changed as shown in FIG. 6. The feature is that color gradation display can be obtained by

At the same time, as another method, by increasing the number of panels on the driving side to three, it is possible to assemble an apparatus having the structure shown in FIGS. 7 and 8. In any case, gradation display is made possible by temporally changing the color and intensity of the light incident on the drive panel, rather than by making the matrix liquid crystal device for display display gradation. . Furthermore, as another method, the second device may not be one that changes the transmittance but one that changes the reflectance.

[0016]

【Example】

“Example 1”

In this embodiment, an active matrix liquid crystal device using thin film transistors was used as the first device. First, we will explain the manufacturing procedure. In this embodiment, a liquid crystal display device using a ferroelectric liquid crystal (FLC) will be explained using a liquid crystal display device using a circuit configuration as shown in FIG. 9, that is, an inverter type circuit configuration. FIG. 10 shows an actual arrangement of electrodes and the like corresponding to this circuit configuration. In order to simplify the explanation, only the portion corresponding to 2×2 is shown. Further, an actual drive signal waveform is shown in FIG. In order to simplify the explanation, this will also be explained using signal waveforms in a 4×4 matrix configuration.

First, a method for manufacturing the liquid crystal display device used in this example will be explained with reference to FIG. In FIG. 12(A), a silicon oxide film as a blocking layer 51 is deposited on a glass 50 such as quartz glass, which is not expensive and can withstand heat treatment at 700° C. or lower, for example, about 600° C., using magnetron RF (high frequency) sputtering. Fabricate to a thickness of ~3000 Å. Process conditions are 100% oxygen atmosphere.
Film forming temperature 15℃, output 400-800W, pressure 0.5P
It was set as a. The film formation rate using quartz or single crystal silicon as the target was 30 to 100 Å/min.

A silicon film was formed thereon by LPCVD (low pressure vapor phase), sputtering or plasma CVD. When forming by the reduced pressure vapor phase method, the temperature is 1 higher than the crystallization temperature.
00-200℃ lower 450-550℃, for example 530℃
disilane (Si2H6) or trisilane (Si3
H8) was supplied to a CVD apparatus to form a film. The pressure inside the reactor was 30 to 300 Pa. Film formation speed is 50-250
It was Å/min. Threshold voltage (Vt) of NTFT and PTFT
h), boron may be added using diborane at a concentration of 1×10 15 to 1×10 18 cm −3 during film formation.

In the case of sputtering, the back pressure before sputtering was set to 1×10 -5 Pa or less, single crystal silicon was used as a target, and the process was carried out in an atmosphere containing 20 to 80% hydrogen in argon. For example, 20% argon and 80% hydrogen were used. The film forming temperature was 150° C., the frequency was 13.56 MHz, the sputtering output was 400 to 800 W, and the pressure was 0.5 Pa.

When producing a silicon film by the plasma CVD method, the temperature is, for example, 300°C, and monosilane (SiH) is used.
4) or disilane (Si2H6) was used. These were introduced into a PCVD apparatus, and a film was formed by applying high frequency power of 13.56 MHz.

[0022] The coating formed by these methods is
Preferably, the oxygen content is 5 x 1021 cm-3 or less. If this oxygen concentration is high, it will be difficult to crystallize, and thermal annealing will be difficult.
The annealing temperature must be increased or the thermal annealing time must be increased. Also, if it is too low, the backlight will cause the lead to turn off.
The current will increase. Therefore, 4×1019 ~ 4×
The range was 1021 cm-3. Hydrogen is 4×1020c
m-3, and when compared with 4 x 1022 cm-3 of silicon, it was 1 atomic %. In addition, in order to promote crystallization of the source and drain, the oxygen concentration was increased to 7×101
9cm-3 or less, preferably 1x1019cm-3 or less, and oxygen is ion-implanted to 5x1020 to 5x102 only to the channel formation region of the TFT constituting the pixel.
You may add so that it may become 1 cm<-3>. At this time, the TFTs constituting the peripheral circuit are not irradiated with light, so it is effective to reduce the amount of oxygen mixed in and to increase carrier mobility in order to achieve high frequency operation.

Next, the silicon film in an amorphous state was
After fabrication to a thickness of ~5000 Å, e.g. 1500 Å, 4
Medium temperature heat treatment in a non-oxide atmosphere for 12 to 70 hours at a temperature of 50 to 700 °C, for example 600 °C in a hydrogen atmosphere.
The temperature was kept at ℃. Since a silicon oxide film with an amorphous structure is formed on the substrate surface below the silicon film, no specific nuclei are present in this heat treatment, and the entire structure is uniformly heated and annealed. That is, when the film is formed, it has an amorphous structure, and hydrogen is simply mixed therein.

By annealing, the silicon film changes from an amorphous structure to a highly ordered state, with some parts exhibiting a crystalline state. In particular, regions with relatively high order after silicon film formation tend to crystallize and become crystalline. However, since the silicon existing between these regions forms bonds with each other, the silicon elements attract each other. Single crystal silicon peak 522 measured by laser Raman spectroscopy
A peak shifted to the lower frequency side than cm-1 is observed. Its apparent particle size is calculated from the half-width of 50
~500 Å and looks like a microcrystal, but in reality there are many highly crystalline regions with a cluster structure, and each cluster has a semi-amorphous structure in which each cluster is bonded (anchored) with silicon. A film could be formed.

As a result, the film exhibits a state in which it can be said that there is substantially no grain boundary (hereinafter referred to as GB). Since carriers can easily move from one cluster to another through anchored locations, so-called GB
The carrier mobility is higher than that of polycrystalline silicon, which clearly exists. That is, hole mobility (μh) = 10 to 200 cm
2/VSec, electron mobility (μe) = 15-300
cm2/VSec is obtained.

On the other hand, if the film is made polycrystalline by high-temperature annealing at 900 to 1200°C instead of annealing at a medium temperature as described above, impurities in the film will segregate due to solid phase growth from the nuclei. , impurities such as oxygen, carbon, and nitrogen increase in the GB, and although the mobility in the crystal is high, a barrier is created in the GB and the movement of carriers there is inhibited. As a result, the reality is that it is difficult to obtain a mobility of 10 cm2/Vsec or more. That is, for the reason mentioned above, this embodiment uses a silicon semiconductor having a semi-amorphous or semi-crystalline structure.

A silicon oxide film was formed thereon as a gate insulating film to a thickness of 500 to 2000 Å, for example 1000 Å. These conditions were the same as those for producing a silicon oxide film as a blocking layer. During this film formation, a small amount of fluorine may be added to immobilize sodium ions.

[0028] After this, 1 to 5 x 102 phosphorus is added to the upper side.
A silicon film with a concentration of 1 cm-3 or molybdenum (Mo), tungsten (W) on this silicon film and
), MoSi2 or WSi2 to form a multilayer film. This was patterned using a second photomask (2) to obtain the image shown in FIG. 12(B). Gate electrode 9 for PTFT, NT
A gate electrode 19 for FT was formed. For example, the channel length is 10 μm, and the gate electrode is made of phosphorus-doped silicon of 0.2 μm.
m, and molybdenum was formed thereon to a thickness of 0.3 μm. In FIG. 12(C), a photoresist 57 is formed using a photomask (2), and a source 10 for PTFT is formed.
, for the drain 12, apply boron to 1 to 5 x 1015 cm.
It was added by ion implantation at a dose of -2. Next, as shown in FIG. 12(D), an NTFT was formed using a photomask (2). Source 20, drain 18 for NTFT
As a result, phosphorus was added at a dose of 1 to 5×10 15 cm −2 by ion implantation.

These steps were performed through the gate insulating film 54. However, in FIG. 12B, the silicon oxide on the silicon film may be removed using the gate electrodes 9 and 19 as a mask, and then boron and phosphorus ions may be directly implanted into the silicon film.

Next, heat annealing was performed again at 600° C. for 10 to 50 hours. The source 10 and drain 12 of PTFT and the source 20 and drain 18 of NTFT were fabricated as P+ and N+ by activating impurities. Furthermore, channel forming regions 21 and 11 are formed as semi-amorphous semiconductors under the gate electrodes 9 and 19.

[0031] In this way, even though it is a self-aligning method, a C/TFT can be manufactured without increasing the temperature to 700°C or higher in all steps. Therefore, it is not necessary to use an expensive substrate such as quartz as the substrate material, and the process is extremely suitable for the large pixel liquid crystal display device of the present invention.

In this example, thermal annealing is performed as shown in FIG.
(D) was performed twice. However, the annealing in Fig. 12(A) is omitted depending on the desired characteristics, and both are annealed in Fig. 12(D).
This may also be used to reduce manufacturing time. Figure 12 (
In E), the interlayer insulator 65 was formed as a silicon oxide film by the sputtering method described above. This silicon oxide film may be formed using an LPCVD method, a photo CVD method, or an atmospheric pressure CVD method. For example, it is formed to a thickness of 0.2 to 0.6 μm,
Thereafter, a window 66 for an electrode was formed using a photomask (2). Further, aluminum is formed on all of these by sputtering, and leads 71, 72 and contacts 67 are formed.
, 68 were prepared using a photomask (2), and then a flattening organic resin 69, such as a transparent polyimide resin, was coated on the surface, and electrode holes were drilled again using a photomask (2).

As shown in FIG. 12(F), the two TFTs have a complementary structure, and in order to connect their output ends to the electrode of one pixel of the liquid crystal device as a transparent electrode, ITO (indium oxide) is formed by sputtering.・Tin oxide film) was formed. This was etched using a photomask (2) to form a pixel electrode 17. This ITO was formed into a film at room temperature to 150°C and annealed at 200 to 400°C in oxygen or air.

[0034] In this way, PTFT13 and NTFT
22 and a transparent conductive film electrode 17 serving as a pixel electrode were fabricated on the same glass substrate 50. The characteristics of the obtained TFT are P
TFT has a mobility of 20 (cm2/Vs) and a Vth of -5.
．． 9 (V), and the mobility in NTFT is 40 (cm2/Vs
), Vth was 5.0 (V).

It goes without saying that the above manufacturing method is exactly the same whether it is a buffer type or an inverter type. A first substrate was obtained by manufacturing according to the method described above.

Furthermore, a transparent electrode is provided on almost the entire surface of the substrate, and NMP (N-methyl 2
A polyimide solution diluted with pyrrolidone) was printed, then pre-baked at 50°C, baked in nitrogen at 280°C for 1 hour, and then rubbed to serve as a means for initial orientation of the liquid crystal composition and as a second substrate. .

[0037] Between the first substrate and the second substrate, there is a liquid crystal composition exhibiting ferroelectricity and a 2.5 μm thick layer made of silicon oxide.
A first device was prepared by dispersing and sandwiching particles having a diameter of 200 particles per 1 mm 2 and fixing the periphery with epoxy resin.

Next, a description regarding the second device will be added. D
ITO (indium tin oxide) by C sputtering method
was formed with a thickness of 1100 Å. Thereafter, 100 parallel electrodes and leads were formed using photolithography to obtain a first substrate. Further, ITO (indium tin oxide) was formed to a thickness of 1100 Å by DC sputtering on a 1.1 mm thick soda lime glass substrate on which a 1000 Å silicon oxide film was formed by sputtering. After that, after forming one parallel electrode and lead using photolithography,
Depending on the offset method, NMP (N-methyl 2-pyrrolidone)
A diluted polyimide solution was printed, and then it was pre-baked at 50°C, baked in nitrogen at 280°C for 1 hour, and then rubbed to obtain a second substrate which was used as a means for initial orientation of the liquid crystal composition.

[0039] The first substrate and the second substrate are made of a liquid crystal composition exhibiting ferroelectricity and a 2.5 μm thick film made of silicon oxide.
A second device was prepared by dispersing and sandwiching particles having a diameter of 200 particles per 1 mm 2 and fixing the periphery with epoxy resin.

As shown in FIGS. 1(a) and 1(b), the first device (80), the second device (81), and the light source (82)
), screen (83), mirror (84), optical system (8
5) A tuner (86) was installed to obtain a television receiver.

Next, an explanation will be added regarding the driving of this device.

The pixel configuration of the first device manufactured in this example has 640 pixels horizontally by 480 pixels vertically, and 48 pixels in the scanning direction.
A write signal is applied to 0 leads for 11.58 microseconds. Therefore, one screen has a time of 5.56 msec, and a set of 9 screens has a time of 33.33 msec.

The first part of the second device turns on 25 of the 100 electrodes, which is 1/4 of the total, during the first period, and the transmitted light intensity is reduced to 1/4 of the maximum. did. In the second period, 2/4 of the entire unit is turned on, and the transmitted light intensity is reduced to 2 of the maximum.
/4. During the third period, everything was turned on to maximize transmitted light intensity. After that, from the fourth to the ninth period, everything was turned off, and the transmitted light intensity was set to zero.

In the second device, all of the 100 electrodes are turned off during the first to third periods, and the transmitted light intensity is zero, and during the fourth period, 1/1 of the total electrodes are turned off. 4, 25 lights were turned on, and the transmitted light intensity was set to 1/4 of the maximum intensity. In the fifth period, 2/4 of the entire light was turned on, and the transmitted light intensity was set to 2/4 of the maximum intensity. In the sixth period, everything was turned on to maximize transmitted light intensity. After that, from the seventh to the ninth period, everything was turned off, and the transmitted light intensity was set to zero.

The third part of the second device is to turn off all of the 100 electrodes during the first to sixth periods, so that the transmitted light intensity is zero, and during the seventh period, all 100 electrodes are turned off. 4, 25 lights were turned on, and the transmitted light intensity was set to 1/4 of the maximum intensity. In the eighth period, 2/4 of the entire light was turned on, and the transmitted light intensity was set to 2/4 of the maximum intensity. In the ninth period, everything was turned on to maximize transmitted light intensity.

[0046] This makes it possible to display three colors and eight levels of gradation, that is, to display 512 colors.

Further, as shown in FIG. 13, the second device is a reflective type liquid crystal device and a reflective optical system is assembled to realize a similar display. At that time, whereas in the above device, transmissive polarizing plates were pasted on both outer sides of the second device, a reflective plate was provided behind one polarizing plate.
It is a reflective type.

“Example 2”

In this example, as shown in FIG. 7, three first devices shown below and one second device similar to Example 1 were used. Hereinafter, a method for manufacturing the liquid crystal display device used in this example will be first described using FIG. 14. First, a 1000 Å film of ITO was formed on 1.1 mm soda lime glass (1) by DC sputtering, and then a stripe of width approximately the same as one side of the display pixel electrode was formed using photolithography. It was patterned to form a first electrode (2).

Thereafter, glow discharge was performed under the following conditions to form a SiX CY OZ (X+Y+Z=1) film (303
) was deposited to a thickness of 500 Å. The film forming conditions are gas mixture ratio C2
H4 is 2SCCM, NF3 is 1SCCM, H2
is 10SCCM, reaction pressure is 50Pa, and RF power is 100W.

The purpose of adding NF3 in this example is to change the conductivity of the film (303) and control the nonlinear characteristics, and it is effective to add NF3 at a rate of 30% by volume or less. As a method of controlling this nonlinearity, there is a method of adding thermal annealing. This is the I of the MIM type element.
Thin film (303) corresponding to the (insulator) part
The hydrogen content in the film is controlled by measuring the dehydrogenation of the hydrogen, thereby controlling the nonlinearity of the MIM type device. The processing conditions for this thermal annealing include a temperature of 380°C;
The pressure is 100 Pa, the processing atmosphere is Ar, and the processing time is 1 hour. Moreover, in the present invention, this SiX CY O
A thin film containing a composition represented by Z (X+Y+Z=1) (
303) thickness of 2000 Å or less, preferably 500 Å or less
By reducing the thickness to Å or less, the light transmittance could be increased. Figure 15 shows SiX CY OZ (X+Y+Z
1) shows the spectral transmittance at 500 Å of a thin film containing the composition represented by =1).

Conventionally, insulators for MIM type elements
A carbon film containing carbon as a composition in a portion, for example, TaO5
(Tantalum pentoxide) When a film is used, its light transmittance becomes a problem, so there are constraints on the process, such as making the area as small as possible. Thereafter, ITO was deposited to a thickness of 1000 Å on the film (303) again by DC sputtering, and a second electrode (4) was obtained by photolithography. In this case, a magnetron type RF sputtering method may be used.

The dimensions of the second electrode, which is one of the pixel electrodes, were square with each side being 250 μm, and the gap between pixels was 25 μm. This second electrode (304) has a size that serves as a unit pixel during display, and acts so that the electric field applied to the thin film (303) is uniform in each pixel. In this way, the first substrate (
310) was obtained.

The other second substrate (311) also has 1.1
ITO was deposited to a thickness of 1000 Å on soda lime glass (309 mm) by DC sputtering. Thereafter, using a photolithography method, patterning is performed in a stripe shape having a width approximately the same as one side of the display pixel electrode, thereby forming a third electrode (308).

A polyimide thin film of 200 Å was formed on the first substrate (310) by a printing method, and then an alignment film (305) was provided by a rubbing method as a means of arranging liquid crystal molecules in a certain direction. .

[0056] The first substrate (310) and the second substrate (31
1), a ferroelectric liquid crystal (307) and a spacer (306) for maintaining the distance between the substrates made of resin.
) and fixed it around it with epoxy adhesive.

[0057] Thereafter, a liquid crystal driving LSI was connected to the leads connected to the first electrode (302) and the third electrode (304) using the COG method to obtain a liquid crystal display device.

Thin film (303) formed in this example
has optical transparency, and there were no optical problems as long as the thickness was 500 Å. FIGS. 16(a) and 16(b) show the current-voltage characteristics of the nonlinear element of this example.

Next, explanation will be added regarding the driving of this device.

The pixel configuration of the first device manufactured in this example has 640 pixels horizontally by 480 pixels vertically, and 480 leads in the scanning direction have a pixel structure for writing for 17.36 μs. A signal is added. Therefore, 8.33 on one screen
m seconds, and one set of 4 screens takes 33.33 m seconds.

In the second device, among the 100 electrodes, 25, which is 1/8 of the total, were turned on during the first period, and the transmitted light intensity was set to 1/8 of the maximum. In the second period, 2/8 of the entire light was turned on, and the transmitted light intensity was set to 1/4 of the maximum intensity. In the third period, 4/8 of the entire light was turned on, and the transmitted light intensity was set to 1/2 of the maximum intensity. All O in the fourth period
N was used to maximize the transmitted light intensity.

[0062] This makes it possible to display 3 colors and 16 levels of gradation, that is, display 4096 colors.

Further, as shown in FIG. 17, the second device is a reflective type liquid crystal device and a reflective optical system is assembled to realize a similar display. At that time, whereas in the above device, transmissive polarizing plates were pasted on both outer sides of the second device, a reflective plate was provided behind one polarizing plate.
It is a reflective type.

"Example 3"

In this example, as shown in FIG.
The first device similar to the above was used as a device having three sheets, and the second device was a device having one electrode and lead during patterning. Three pieces of this device were used.

Next, an explanation will be added regarding the driving of this device. The pixel configuration of the first device manufactured in this example has 640 pixels horizontally by 480 pixels vertically, and 480 pixels in the scanning direction.
A write signal is applied to the book lead for 23.15 microseconds. Therefore, one screen has a time of 11.11 msec, and a set of three screens has a time of 33.33 msec.

[0067] The second device is configured to turn off the red color during the first period.
N, the green color was turned on during the second period, and the blue color was turned on during the third period, so that the colors supplied to the first device could be changed in chronological order according to the three primary colors of light.

[0068] This makes it possible to display three colors and eight levels of gradation, that is, to display 512 colors.

[0069]

[Effects of the Invention] As explained above, with the configuration of the present invention, compared to a conventional television receiver using a cathode ray tube,
The weight was reduced by about 70%. By using the present invention, gradation display, which has been difficult with conventional liquid crystal display devices using ferroelectric liquid crystals, has become possible. As a result, the amount of information was expected to increase, and it became possible to use it widely as a television receiver.

[Brief explanation of the drawing]

FIG. 1 is a configuration diagram of a television receiver according to the present invention.

FIG. 2 shows the basic concept of ferroelectric liquid crystal.

FIG. 3 shows how gradation is displayed depending on the pixel area.

FIG. 4 shows a structural diagram of a cathode ray tube projection television.

FIG. 5: Pixels configured on a screen.

FIG. 6 shows a method for driving the first and second devices.

FIG. 7 is a configuration diagram of a television receiver according to the present invention.

FIG. 8 is a configuration diagram of a television receiver according to the present invention.

FIG. 9 shows a circuit diagram of this embodiment.

FIG. 10 shows a basic structural diagram of this embodiment.

FIG. 11 shows drive signals of this embodiment.

FIG. 12 shows the steps of this example.

FIG. 13 is a configuration diagram of a television receiver according to this embodiment.

FIG. 14 shows a structural diagram of this embodiment.

FIG. 15: SiX CY OZ (X+
500 Å of a thin film containing a composition represented by Y+Z=1)
Spectral transmittance of time

FIG. 16 shows current-voltage characteristics of the nonlinear element according to this example.

FIG. 17 is a configuration diagram of a television receiver according to this embodiment.

Claims (15)

[Claims] 1. A first substrate having an electrode and a lead on the substrate, and a second substrate having an electrode and a lead on the substrate, the liquid crystal composition exhibiting ferroelectricity and the liquid crystal composition are at least initially a first substrate having an electrode and a lead on the substrate; and a second substrate having an electrode and a lead on the substrate. and a means for orienting the liquid crystal composition at least initially, the television is characterized in that three second devices are provided on an optical path between a light source and a screen that outputs images. receiver. [Claim 2] In Claim 1, the second device has a light transmittance of approximately 0:20:21:22:...,:2n
(n is an arbitrary number) A television receiver characterized by changing over time. 3. The second device according to claim 1 has a light transmittance of approximately 20:21:22, . . . , 2n (n
is an arbitrary number) over time. 4. In claim 1, the second device has a light reflectance of approximately 0:20:21:22:...,:2n
(n is an arbitrary number) A television receiver characterized by changing over time. 5. In claim 1, the second device has a light reflectance of approximately 20:21:22, . . . , 2n (n
is an arbitrary number) over time. 6. A liquid crystal device having a matrix configuration on a substrate, wherein an electrically nonlinear element is provided in a wiring connected to each pixel, and an output of the electrically nonlinear element is connected to the pixel. One or more first substrates sandwiching a liquid crystal composition exhibiting ferroelectricity and means for orienting the liquid crystal composition at least initially, between one substrate and a second substrate having electrodes and leads on the substrates. a first substrate having electrodes and leads on the substrate;
A second substrate having an electrode and a lead on the substrate, and three second devices sandwiching a liquid crystal composition exhibiting ferroelectricity and a means for orienting the liquid crystal composition at least initially; A television receiver characterized by being installed on an optical path between a screen and a screen that outputs images. 7. In claim 6, the second device has a light transmittance of approximately 0:20:21:22:...,:2n
(n is an arbitrary number) A television receiver characterized by changing over time. 8. In claim 6, the second device has a light transmittance of approximately 20:21:22:..., 2n (n
is an arbitrary number) over time. 9. In claim 6, the second device has a light reflectance of approximately 0:20:21:22:...,:2n
(n is an arbitrary number) A television receiver characterized by changing over time. 10. In claim 6, the second device has a light reflectance of approximately 20:21:22, . . . , 2n (
A television receiver characterized in that n is an arbitrary number) that changes over time. 11. In a liquid crystal device having a matrix configuration on a substrate, each pixel is provided with a P-channel thin film transistor and an N-channel thin film transistor in a complementary configuration, and the output of the complementary transistor is applied to the pixel. A first substrate having a connected configuration and a second substrate having electrodes and leads on the substrate,
one or more first devices sandwiching a liquid crystal composition exhibiting ferroelectricity and a means for orienting the liquid crystal composition at least initially; a first substrate having electrodes and leads on the substrate; and a second substrate having electrodes and leads, the three second devices sandwiching a liquid crystal composition exhibiting ferroelectricity and a means for orienting the liquid crystal composition at least initially. A television receiver characterized by being installed on an optical path between screens that output. 12. In claim 11, the second device has a light transmittance of approximately 0:20:21:22: . . .
A television receiver characterized by changing over time to n (n is an arbitrary number). 13. In claim 11, the second device has a light transmittance of approximately 20:21:22:..., 2n:
(n is an arbitrary number) A television receiver characterized by changing over time. 14. In claim 11, the second device has a light reflectance of approximately 0:20:21:22: . . .
A television receiver characterized by changing over time to n (n is an arbitrary number). 15. In claim 11, the second device has a light reflectance of approximately 20:21:22:..., 2n:
(n is an arbitrary number) A television receiver characterized by changing over time.