JP2934736B2 - TV receiver - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a video signal transmitted from a terrestrial television station, a satellite television station, a cable television station, or a separately provided television video recorder (video deck, laser disk, magneto-optical disk, etc.). We propose a device to display.

[0002]

2. Description of the Related Art Conventionally, as a device for specifically displaying a video signal transmitted from a terrestrial television station, a satellite television station, a cable television station, or a separately provided television video recording device (video deck, laser disk, magneto-optical disk, etc.). In the prior art, a method of emitting an electron beam in a vacuum tube called a cathode ray tube or a CRT to emit a fluorescent screen as an object has been adopted.

[0003] Initially, the diagonal of the display body was 12 to 14 inches, but recently, due to the demands of the world, the size of 20 inches has come to just over 30 inches.

In the case of a 30-inch diagonal, the depth is about 30 inches, and the thickness of the glass forming it has also exceeded 1 cm in order to maintain strength. As another device, a method of enlarging and displaying a high-luminance cathode ray tube with an optical system and projecting it on a screen has been proposed, and is used for an object having a large display area. The outline of the configuration
As shown in FIG .

[0005]

In the case of a television receiver using a cathode ray tube, if the display surface exceeds 30 inches, the total weight exceeds 100 kg. To put heavy goods over 100kg in general household,
There are things that are difficult unless you limit the location. In addition, it is difficult to move the weight by human power when the layout is changed or the like, which has been an obstacle to the spread to general households.

To solve the problem, a projection-type television receiver has been proposed to solve the problem. However, there is a limit in improving the brightness of a high-brightness CRT, which is the basis of the TV receiver. Had become. For this reason, not only is the screen dark but also enlarged by an optical system, so that the contrast ratio in the front is high, but the contrast ratio in an oblique direction is very inferior to that of the CRT method. However, this method is one of the solutions to the problem because the weight is only about 50% of the CRT method. The projection television 20 of FIG.
1 includes a cathode ray tube or liquid crystal display device 204, a tuner 205, an optical system 203, a reflector 202, and a screen 206. The present invention relates to a liquid crystal display device of the portion indicated by reference numeral 204 in FIG. 2.

In recent years, an embodiment in which a thin film transistor type liquid crystal panel using amorphous silicon is used as a base display body instead of a cathode ray tube has been often proposed. The weight is about 30% less than that of the cathode ray tube method, which has become one of the factors that help spread it to general households. However, the display brightness is still lower than that of the cathode ray tube method, and studies are being conducted to increase the intensity of the light source. However, when the intensity of the light source is increased, when the thin film transistor is turned off due to a rise in the temperature of the liquid crystal panel and light irradiation. It is a reality that satisfactory display cannot be performed due to the decrease in the resistance value in the above.

There is also a display using a ferroelectric liquid crystal proposed by Clark Laguawall et al.
FIG. 3 shows a conceptual diagram thereof. Since the ferroelectric liquid crystal has spontaneous polarization, when the thickness of the liquid crystal layer is reduced until the helix is unwound, an interface stable state (SSFLC) is created, and once an electric field is applied, transmission occurs even when the electric field is removed. Alternatively, a memory effect in which a non-transmissive state continues can be obtained. By utilizing this memory state, TFT
Static driving like the active matrix LCD of the above is possible.

However, in the case of a ferroelectric liquid crystal, transmission,
Since only two non-transmissive stable states are taken, gradation display with diversification of information is not good. In particular, when these liquid crystal electro-optical devices are used for image purposes, gradation display is indispensable. To solve this,
A gradation is displayed by dividing a unit pixel into a large number of areas and forming a plurality of dots. For example, it has been devised that a unit pixel is divided into 1: 2: 4 in an area ratio and eight gradations are obtained by a combination of ON / OFF. FIGS. 4A and 4B show the electrode structure at the time of two gradation display,
The electrode structure at the time of 8 gradation display is shown.

However, since three data signals must be applied to one unit pixel, the external circuit becomes very complicated, resulting in an increase in cost and a decrease in the yield when the external circuit is connected. Was. Further, since an insulating section is provided between the electrodes for division, the aperture ratio is reduced. For example, 250 μm
When a unit pixel having a pitch of 25 μm is considered, the aperture ratio is 81% when no division is made, whereas it is reduced to 63% when divided with the same gap. Furthermore, the width of the thinnest electrode (103) for division is 25 in the case of the pitch and gap.
μm. 1000 × 1 as a liquid crystal display
Even when a pixel having 000 pixels is manufactured using an ITO sheet resistance of 5Ω or less, the electrode in the data direction has a resistance of about 50 kΩ from end to end. In this case, the electric field intensity applied to the liquid crystal at both ends of the electrode is different, and uniform display cannot be performed, which lacks realism. Therefore, there has been a demand for a means capable of controlling the gradation more realistically.

[0011]

SUMMARY OF THE INVENTION The present invention enables gradation display by changing the intensity of a light source for illumination with time, instead of causing a matrix liquid crystal device for display to perform gradation display. Things. In the present invention, the transmittance of the second liquid crystal device is controlled as a means for temporally changing the intensity of the light source for illumination. In the present invention, as a configuration for enabling the above-mentioned gradation display, a first substrate having electrodes and leads on the substrate and a second substrate having electrodes and leads on the substrate have a ferroelectric property. A first device sandwiching a liquid crystal composition showing a liquid crystal composition and a means for orienting the liquid crystal composition at least initially, a first substrate having electrodes and leads on the substrate, and a first device having electrodes and leads on the substrate. A second device for holding a liquid crystal composition exhibiting ferroelectricity and means for orienting the liquid crystal composition at least initially by the second substrate is provided on an optical path between a light source and a screen for outputting an image. Make up the configuration. The first and second devices using the liquid crystal are, for example, liquid crystal devices having a matrix configuration on a substrate, wherein each pixel has a complementary configuration of a P-channel thin film transistor and an N-channel thin film transistor. And the output of the complementary transistor is connected to the pixel.
Further, the second liquid crystal display device has a light transmittance of about 2
^It is characterized in that it changes over time to ⁰ : 2 ¹ : 2 ² pairs,..., ²ⁿ (n is an arbitrary number). FIG. 1 shows a projection type television receiver as an example of the present invention. FIG.
80 is the first device, and 81 is the second device.
Device. Reference numeral 82 denotes a light source lamp, 86 denotes a tuner and a control unit, 85 denotes a projection optical system, 84 denotes a reflection plate, and 83 denotes a screen. In the present invention,
Although a liquid crystal display device is used as the devices 80 and 81, other transmissive display devices may be used. Further, the present invention is not limited to the rear projector type as in this example, and it is still not applicable to any type of projection type projector.

A first substrate having electrodes and leads on a substrate, and a second substrate having electrodes and leads on the substrate, the liquid crystal composition exhibiting ferroelectricity and the liquid crystal composition being oriented at least initially. In this case, three screens are set as a set in order to perform a gradation display on the first apparatus that holds the means for performing the gradation display. In this section, for the sake of simplicity, the explanation will be added using the light intensity consisting of 3 bits.

In the case of performing with 3 bits, display up to 8 gradations is possible. It is assumed that the first device has a matrix of 2 × 2 pixels as shown in FIG .

The levels of the eight gradations are changed from dark to bright,
When G0, G1, G2,..., G7, the A1 pixel ( 1
06 ) is displayed as G0, the level of the A2 pixel ( 107 ) is displayed as G3, the level of the B1 pixel ( 108 ) is displayed as G5, and the level of the B2 pixel ( 109 ) is displayed as G7. The light intensity is set to 1 by the change in the transmittance of the device of FIG.
FF (no light transmission), A2 pixel ON (light transmission), B
One pixel is ON (light transmission), and the B2 pixel is ON (light transmission).

On the second screen, the light intensity is set to 2 due to the change in the transmittance of the second device, and the pixels on the first device are set to OFF (light is not transmitted), and A2 pixel is set to OFF. ON (transmission of light), B1 pixel OFF (non-transmission of light),
The B2 pixel is turned on (transmitting light).

On the third screen, the light intensity is set to 4 due to the change in the transmittance of the second device, and the pixels on the first device are turned OFF (light is not transmitted), and the pixels A2 are turned off. OFF (no light transmission), B1 pixel ON (light transmission),
The B2 pixel is turned on (transmitting light).

Table 1 below shows how to operate the first apparatus (gradation levels and ON / OFF of a set of three screens).

[0018]

[Table 1]

As described above, by setting the three screens as a set and setting the respective pixels to be transmissive and non-transmissive, that is, ON and OFF, the gradation level of the corresponding pixels can be changed as shown in Table 1. By operating the first device and the second device in this way, it is possible to display up to eight gradations on one set of three screens. In this description, 3
Although the description has been made with bits (n = 3), n in the claims is an arbitrary number, and it goes without saying that another value may be used.

[0020]

[Embodiment 1] In this embodiment, an active matrix liquid crystal device using a thin film transistor is used as a first device. First, a description will be given of a manufacturing procedure of the active matrix type liquid crystal device. In this embodiment, a liquid crystal display device using a circuit configuration as shown in FIG. 6, that is, an inverter type circuit configuration, is used, and a ferroelectric liquid crystal (FLC) is used.
A liquid crystal display device using will be described. FIG. 7 shows an actual arrangement of electrodes and the like corresponding to this circuit configuration. For simplification of description, only portions corresponding to 2 × 2 are described. FIG. 8 shows an actual drive signal waveform. For the sake of simplicity, the description will be made using signal waveforms in the case of a 4 × 4 matrix configuration.

First, a method of manufacturing a liquid crystal display device used in this embodiment will be described with reference to FIGS.
In FIG. 9A, a non-expensive 700 glass such as quartz glass is used.
Glass 5 capable of withstanding heat treatment at a temperature of not more than 600C, for example, about 600C.
A silicon oxide film serving as a blocking layer 51 is formed on the metal oxide layer 0 to a thickness of 1000 to 3 using a magnetron RF (high frequency) sputtering method.
It is manufactured to a thickness of 000 mm. Process condition is oxygen 100
% Atmosphere, a film forming temperature of 15 ° C., an output of 400 to 800 W, and a pressure of 0.5 Pa. The deposition rate using quartz or single crystal silicon as the target was 30 to 100 ° / min.

On this, a silicon film was formed by LPCVD (low pressure gas phase), sputtering or plasma CVD. When formed by the reduced pressure gas phase method, the temperature is 1
450-550 ° C lower by 00-200 ° C, for example 530 ° C
With disilane (Si ₂ H ₆ ) or trisilane (Si ₃ H
₈ ) was supplied to a CVD apparatus to form a film. The pressure in the reactor was 30 to 300 Pa. The deposition rate is 50-250 ° /
Minutes. In order to control the threshold voltage (Vth) of the NTFT and PTFT to be substantially the same, boron is used to control the threshold voltage (Vth) to 1 × 10 ¹⁵ to 1 × 10 ¹⁸ cm ⁻³ using diborane.
May be added during the film formation.

In the case of performing the sputtering method, the back pressure before the sputtering was set to 1 × 10 ⁻⁵ Pa or less, and single crystal silicon was used as a target in an atmosphere in which hydrogen was mixed with 20 to 80% of argon. For example, argon was 20% and hydrogen was 80%. The deposition temperature is 150 ° C., the frequency is 13.56 MHz,
The sputter output was 400-800 W and the pressure was 0.5 Pa.

When a silicon film is formed by the plasma CVD method, the temperature is set to, for example, 300 ° C., and monosilane (SiH
₄ ) or disilane (Si ₂ H ₆ ) was used. These were introduced into a PCVD apparatus, and a high-frequency power of 13.56 MHz was applied to form a film.

The coatings formed by these methods are:
It is preferable that oxygen is 5 × 10 ²¹ cm ⁻³ or less. If the oxygen concentration is high, crystallization is difficult, and the thermal annealing temperature must be increased or the thermal annealing time must be increased. If the amount is too small, the leakage current in the off state increases due to the backlight. Therefore 4 × 10
The range was ¹⁹ to 4 × 10 ²¹ cm ⁻³ . Hydrogen is 4x
It was 10 ²⁰ cm ⁻³ , which was 1 atomic% as compared with silicon 4 × 10 ²² cm ⁻³ . In order to further promote crystallization of the source and the drain, the oxygen concentration is set to 7 × 10 ¹⁹ cm ⁻³ or less, preferably 1 × 10 ¹⁹ c.
m ⁻³ or less, and oxygen is ion-implanted only into a channel formation region of a TFT constituting a pixel to form 5 × 10 ²⁰ to
You may add so that it may become 5 * 10 < ²¹ > cm <^-3> . At this time, since light is not irradiated to the TFTs constituting the peripheral circuit, it is effective to reduce the mixing of oxygen and to have a higher carrier mobility for high-frequency operation.

Next, a silicon film in an amorphous state is
After fabrication to a thickness of ~ 5000mm, for example 1500mm, 4
Medium-temperature heat treatment in a non-oxide atmosphere at a temperature of 50 to 700 ° C. for 12 to 70 hours, for example, 600 hours in a hydrogen atmosphere.
It was kept at a temperature of ° C. Since a silicon oxide film having an amorphous structure is formed on the substrate surface below the silicon film, no specific nucleus is present in this heat treatment, and the whole is uniformly heat-annealed. That is, it has an amorphous structure at the time of film formation, and hydrogen is simply mixed therein.

By the annealing, the silicon film shifts from an amorphous structure to a highly ordered state, and a part of the silicon film exhibits a crystalline state. In particular, a region having a relatively high order in a state after the formation of silicon is particularly likely to be crystallized to be in a crystalline state. However, since the silicon existing between these regions is bonded to each other, the silicons are mutually opposed. Single crystal silicon peak 522 measured by laser Raman spectroscopy
A peak shifted to a lower frequency side than cm ⁻¹ is observed. Its apparent particle size, calculated from the half width, is 5
Although it is like a microcrystal having a size of 0 to 500 °, there are actually a large number of regions having a high crystallinity and a cluster structure. Could be formed.

As a result, the coating exhibits a state substantially free of grain boundaries (hereinafter referred to as GB). Carriers can easily move from one cluster to another through the anchored locations between the clusters, so-called GB
Carrier mobility higher than that of polycrystalline silicon that clearly exists. That is, hole mobility (μh) = 10 to 200 cm
² / VSec, electron mobility (μe) = 15-300 cm
² / VSec is obtained.

On the other hand, if the film is polycrystallized by high-temperature annealing at 900 to 1200 ° C. instead of annealing at the above-mentioned medium temperature, segregation of impurities in the film occurs due to solid phase growth from nuclei. Impurities such as oxygen, carbon, and nitrogen increase, and the mobility in the crystal is large. However, a barrier (barrier) is formed in GB to hinder the movement of carriers there. As a result, a mobility of 10 cm ² / Vsec or more cannot be easily obtained. That is, in this embodiment, a silicon semiconductor having a semi-amorphous or semi-crystalline structure is used for such a reason.

This silicon film is used as a first photomask.
9 (A) was obtained. On the patterned silicon film 52, a silicon oxide film 54 was formed as a gate insulating film to a thickness of 500 to 2000 {for example, 1000}. This was made under the same conditions as those for forming the silicon oxide film as the blocking layer. During this film formation, a small amount of fluorine is added,
Sodium ions may be immobilized.

After this, phosphorus is 1 to 5 × 10
A silicon film having a concentration of ²¹ cm ⁻³ or a multilayer film of the silicon film and molybdenum (Mo), tungsten (W), MoSi ₂ or WSi ₂ was formed thereon. This was patterned using a second photomask to obtain FIG. 9B. Gate electrode 9 for PTFT, NTF
A gate electrode 19 for T was formed. For example, channel length 1
0 μm, phosphorus-doped silicon as gate electrode 0.2 μm
m, and molybdenum was formed thereon to a thickness of 0.3 μm. In FIG. 9C, a photoresist 57 is formed using a photomask, and boron is applied to the PTFT source 10 and drain 12 by 1 to 5 × 10 ¹⁵ cm ^−2.
Was added by an ion implantation method at a dose of. Next, FIG.
As in (D), NTFT was formed using a photomask. Phosphorus was added as a source 20 and a drain 18 for NTFT by an ion implantation method at a dose of 1 to 5 × 10 ¹⁵ cm ⁻² .

These steps were performed through the gate insulating film 54. However, in FIG. 9B, the silicon oxide on the silicon film may be removed using the gate electrodes 9 and 19 as a mask, and then boron and phosphorus may be directly ion-implanted into the silicon film.

Next, heat annealing was performed again at 600 ° C. for 10 to 50 hours. The source 10 and the drain 12 of the PTFT and the source 20 and the drain 18 of the NTFT were activated to produce P ⁺ and N ⁺ by activating impurities. Channel formation regions 11 and 21 are formed below the gate electrodes 9 and 19 as semi-amorphous semiconductors.

In this way, a C / TFT can be manufactured without applying a temperature to 700 ° C. or more in all the steps even though the self-alignment method is used. Therefore, it is not necessary to use an expensive substrate such as quartz as a substrate material, and this is a process very suitable for the large pixel liquid crystal display device of the present invention.

In this embodiment, the thermal annealing is performed as shown in FIG.
(D) was performed twice. However, the annealing in FIG. 9A may be omitted depending on the required characteristics, and both may be omitted by the annealing in FIG. 9D to shorten the manufacturing time. FIG. 10 (A)
In the above, a silicon oxide film was formed on the interlayer insulator 65 by the sputtering method described above. This silicon oxide film may be formed by an LPCVD method, a photo CVD method, or a normal pressure CVD method. For example, it was formed to a thickness of 0.2 to 0.6 μm, and then a window 66 for an electrode was formed using a photomask. Further, aluminum is formed on the entirety by sputtering, and leads 71 and 72 and contacts 67,
After fabricating No. 68 using a photomask, the surface was coated with an organic resin 69 for planarization, for example, a translucent polyimide resin, and the electrode hole was formed again using the photomask.

As shown in FIG. 10B, in order to connect the two TFTs to a complementary structure and to connect the output terminals thereof to the electrodes of one pixel of the liquid crystal device as a transparent electrode, ITO (indium oxide) was formed by sputtering. (A tin oxide film). This was etched using a photomask to form the pixel electrode 17. This ITO film was formed at room temperature to 150 ° C. and achieved by annealing at 200 to 400 ° C. in oxygen or atmosphere.

As described above, the PTFT 13 of FIG.
The TFT 22 and the electrode 17 of the transparent conductive film serving as a pixel electrode were formed on the same glass substrate 50. The characteristics of the obtained TFT are PTFT, the mobility is 20 (cm ² / Vs), and Vth is
Is -5.9 (V), and the mobility is 40 (cm ² ) in NTFT.
/ Vs) and Vth were 5.0 (V).

It goes without saying that the above manufacturing method is exactly the same whether it is of the buffer type or the inverter type. The first substrate was obtained according to the method described above.

A transparent electrode is provided on almost the entire surface of the substrate, and NMP (N-methyl 2
(Pyrrolidone), and then baked at 50 ° C. and baked in nitrogen at 280 ° C. for 1 hour, and then rubbed, and used as a means for initial alignment of the liquid crystal composition and used as a second substrate. .

Between the first substrate and the second substrate, a liquid crystal composition exhibiting ferroelectricity and a 2.5 μm
Particles having a diameter were dispersed and held at a ratio of 200 particles per 1 mm ² , and the periphery was fixed with an epoxy resin to produce a first device.

Next, a description of the second device will be added.

A first substrate having a plurality of electrodes and leads on a substrate, and a transparent electrode provided on almost the entire surface of the substrate, and NMP (N-methyl 2
(Pyrrolidone) diluted with a polyimide solution, then calcined at 50 ° C., baked at 280 ° C. for 1 hour in nitrogen, rubbed, and with a second substrate as a means for initial alignment of the liquid crystal composition. A liquid crystal composition exhibiting ferroelectricity and particles of silicon oxide having a diameter of 2.5 μm,
dispersed in m ² 200 pieces proportion per is nipped to produce a second device by fixing the periphery with an epoxy resin.

As shown in FIG . 1 , a first device (80) and a second device (81), a light source (82), a screen (8)
3), a mirror (84), an optical system (85), and a tuner (86) were installed to obtain a television receiver.

Next, the driving of the present apparatus will be described.

The pixel configuration of the first device manufactured in this embodiment has 640 × 480 pixels in the scanning direction and 48 pixels in the scanning direction.
A signal for writing is applied to the zero read for 23.15 μsec. Therefore, one screen has 11.11 ms, and one set of three screens has 33.33 ms.

In the second device, one fourth of the plurality of electrodes is turned on in the first period, and the transmitted light intensity is reduced to one fourth of the maximum. In the second period, 2/4 of the whole was turned ON, and the transmitted light intensity was set to 2/4 of the maximum. During the third period, all were turned ON to maximize the transmitted light intensity.

As a result, eight-stage gradation display is made possible. Similarly, 16 screens of gradation display are confirmed using four screens as one set.

[Embodiment 2] In this embodiment, a display device using a simple matrix is used as a first device.

On a 1.1 mm-thick soda-lime glass substrate having a silicon oxide film of 1000 ° formed on its surface by sputtering, ITO (indium tin oxide) was formed at 1100 ° by DC sputtering. After that, 640 parallel electrodes and leads were formed using a photolithography method to obtain a first substrate. Further, on a 1.1 mm-thick soda-lime glass substrate having a surface thereof on which a silicon oxide film of 1000 ° was formed by a sputtering method, a DC sputtering method was used.
1100 ° of ITO (indium tin oxide) was formed.
Then, after forming 480 parallel electrodes and leads using the photolithography method, a polyimide solution diluted with NMP (N-methyl-2-pyrrolidone) was printed by the offset method, and then calcined at 50 ° C and 280 ° C in nitrogen. After baking for 1 hour, rubbing was performed to obtain a second substrate used as a means for initial alignment of the liquid crystal composition.

A liquid crystal composition having ferroelectricity and a 2.5 μm-thick silicon oxide film were formed by the first substrate and the second substrate.
Particles having a diameter were dispersed and held at a ratio of 200 particles per 1 mm ² , and the periphery was fixed with an epoxy resin to produce a first device.

As the second device, the same device as in Example 1 was used.

Next, the driving of the present apparatus will be described.

The pixel configuration of the first device manufactured in this embodiment has 640 (horizontal) × 480 (vertical) pixels.
A signal for writing is applied to the zero read for 34.72 μsec. FIG. 11 shows the driving waveform. Also,
One screen has 16.67 ms, and two sets of three screens
3.33 msec.

In the second device, of the plurality of electrodes, a half of the plurality of electrodes were turned ON in the first period, and the intensity of the transmitted light was reduced to half of the maximum intensity. During the second period, all were turned on to maximize the transmitted light intensity.

As a result, four-stage gradation display is made possible.

Also in Examples 1 and 2, a liquid crystal display device was produced using a liquid crystal device in which a nematic liquid crystal was dispersed in a network of a photo-curable modified acrylic resin as the second device. High gradation display was obtained. In this embodiment, the inverter type complementary transistor shown in FIG. 6 is used.
The positions of T and NTFT may be interchanged to form a buffer type configuration.

[0057]

As described above, the configuration of the present invention makes it possible to reduce the size of a conventional television receiver using a cathode ray tube.
The weight was reduced by about 70%. By using the present invention, gradation display, which has been difficult in a liquid crystal display device using a conventional ferroelectric liquid crystal, has become possible. As a result, an increase in the amount of information is expected, and a wide range of specifications as a television receiver has become possible.

[Brief description of the drawings]

FIG. 1 shows a basic structural diagram of the present embodiment.

FIG. 2 shows a structural diagram of a CRT projection television.

FIG. 3 shows a basic concept of a ferroelectric liquid crystal.

FIG. 4 shows a state of gradation display according to a pixel area.

FIG. 5 shows a relationship between a gradation and a transmitted light intensity ratio in a corresponding pixel.

FIG. 6 shows a circuit diagram of the present embodiment.

FIG. 7 shows a basic structural diagram of the present embodiment.

FIG. 8 shows a drive signal of the present embodiment.

FIG. 9 shows a manufacturing process of this example.

FIG. 10 shows a manufacturing process of this example.

FIG. 11 shows a drive signal of the present embodiment.

[Explanation of symbols]

 Reference Signs List 80 first device 81 second device 82 light source lamp 83 screen 84 reflector 85 optical system 86 tuner and controller 13 P-type TFT 22 N-type TFT 10 P-type TFT source 9 P-type TFT gate electrode 12 P-type TFT 18 Source of N-type TFT 19 Gate electrode of N-type TFT 20 Drain of N-type TFT 17 Pixel electrode 11 Channel of P-type TFT 21 Channel of N-type TFT

Claims (3)

(57) [Claims] To 1. A light path between the projection screen the light source and the image, the first liquid crystal device is the screen side of having a matrix arrangement for displaying images, the light transmittance within a predetermined time outline 2 ² to 2 ¹ to 2 ² pairs ... 2 ⁿ
(N is an arbitrary number) the second liquid crystal device is provided on the light source side that changes over time in the second the light to match the change in transmittance of the first liquid crystal device of a liquid crystal device ON or OF each pixel
By F television set and performs gradation display. 2. The method of claim 1, the liquid crystal constituting the first liquid crystal device, Ri ferroelectric liquid crystal der, the second liquid crystal device, having a plurality of electrodes and leads
And a second substrate having a transparent electrode provided on almost the entire surface.
And the first substrate and the second substrate
And a ferroelectric liquid crystal interposed therebetween;
^{2 0/2 n} of the whole of the ^{pole, 2 1/2 n, 2} 2/2 n,
... Applying a voltage to ²ⁿ / ²ⁿ in time
, The light transmittance is schematically ^{2 0-2 1: 2 2} pairs ... pairs
2 ⁿ (n is an arbitrary number) . 3. A complementary transistor according to claim 1, wherein each pixel of said first liquid crystal device has a P-channel thin film transistor and an N-channel thin film transistor.
A television receiver characterized in that the outputs are connected .