JPH052187A - Liquid crystal electrooptical device - Google Patents

Abstract

PURPOSE:To provide the liquid crystal panel which has less stray light and enables display of a high contrast to be conducted by providing a layer for absorbing the light from a light source in at least a part of the side periphery of a metallic wiring. CONSTITUTION:A layer 109 which absorbs the light is provided in a part of the side periphery of the metallic wiring 104 of the active element on at least one substrate of the substrates constituting the liquid crystal panel. While the metallic wiring 104 is provided directly on the substrate in such a case, films having other functions are provided on top and bottom of this wiring 104 at need. The light absorption layer 109 does not generate the stray light and has rather a function to decrease the stray light. The materials to be used can absorb the light as far as the materials are black. Thin films essentially consisting of the carbon formed by a vapor phase method (for example, diamond-like carbon, amorphous carbon), black org. material films, oxide films of metals, etc., are applied to the above-mentioned materials.

Description

Detailed Description of the Invention

[0001]

FIELD OF THE INVENTION The present invention relates to the structure of a liquid crystal electro-optical device. In particular, the present invention relates to a liquid crystal electro-optical device suitable for enlarging and displaying an image using the liquid crystal electro-optical device.

[0002]

2. Description of the Related Art Conventionally, as a device for concretely displaying a video signal transmitted from a terrestrial television station, a satellite television station, a cable television station, or a television image recording device (a video deck, a laser disc, a magneto-optical disc, etc.) provided individually. Has adopted a method in which an electron beam is blown in a vacuum tube called a cathode ray tube or a CRT to cause a fluorescent surface as an object to emit light.

Initially, the diagonal of the display body was often 12 to 14 inches, but in recent years, the size of 20 inches, not to mention 30 inches, has come to appear due to the demand of the world.

When the diagonal is 30 inches, the depth is about 30 inches, and the thickness of the glass forming the glass exceeds 1 cm in order to maintain the strength. When the display surface exceeds 30 inches, the total weight exceeds 100 kg. In general households, it is difficult to place a heavy load exceeding 100 kg unless the place is limited. Moreover, when the layout is changed, it becomes difficult to move the weight manually, which hinders the spread of the weight to general households.

Therefore, in order to solve the weight, a projection type television receiver has been proposed. This is also proposed a method of enlarging the display of a high-luminance CRT by an optical system and displaying it on the screen, which is used for a large display area.

Recently, in this projection type,
A practical use is proposed in which a thin film transistor type liquid crystal panel using amorphous silicon is used as a display body which is an origin thereof instead of a cathode ray tube. The weight is about 30% compared to the projection cathode ray tube method, which is one of the factors that help popularization in general households.

A projection display device using this liquid crystal panel normally uses three liquid crystal panels dedicated to red (R), green (G), and blue (B), and uses an optical system as shown in FIG. Combined on one screen and displayed enlarged. Therefore this 3
A single liquid crystal panel requires high-precision alignment accuracy,
Specifically, an accuracy of 1 μm is required.

In such a projection type display device, a liquid crystal panel of about 3 inches is enlarged and displayed on a screen of about 100 inches on a screen 4 to 5 m away. For this reason, it is necessary to make the liquid crystal panel for display high definition before enlargement so that the 100-inch display screen does not become rough and becomes a blurred display.

[0009]

In such a liquid crystal panel, the distance between adjacent pixel electrodes is naturally shortened. Metal wiring for active elements is provided in the X direction or the Y direction at the narrow interval. FIG. 3 is a schematic cross-sectional view of the liquid crystal panel showing this state. In the figure, for simplicity of explanation, a portion without a switching element is shown, and only elements necessary for explanation are drawn, so that the configuration is slightly different from the actual liquid crystal panel.

Reference numeral 101 denotes a transparent glass substrate, and 102
Reference numerals 103 denote pixel electrodes. The distance between the pixel electrodes is about several hundreds of μm, and the metal wiring 104 is provided between them.

In the projection display device, both the rear type and the front type illuminate the liquid crystal panel with light from a powerful light source, and an enlarged display is performed using an optical system. The light L from this light source passes through the glass substrate and is applied to the pixel portion, but is also applied to the metal wiring portion 104 of the active element at the same time. In this portion, light is reflected and scattered, and the scattered and reflected light is reflected and scattered again by the glass substrate portion, and there is light that goes out of the liquid crystal panel as it is.

Now, even when the display of the pixel 103 is turned off and the light is not transmitted, the light reflected and scattered by this wiring portion is transmitted from the peripheral portion of the pixel through the liquid crystal panel. Even when it was turned off, some light leaked and the display contrast deteriorated.

In particular, in the projection display device, it is desired to brighten the projection screen so that both the rear type and the front type can be seen well in bright places, and therefore, a more powerful light source is used to irradiate light. The intensity of the light (stray light) reflected and scattered by the device is increased, which greatly affects the reduction in display contrast.

Further, as the display screen becomes higher definition and higher density, the interval between pixels becomes narrower, or the ratio of the size of the pixel to the size of the wiring becomes smaller, so that this stray light is generated. The influence becomes larger and it is necessary to further increase the display contrast.

[0015]

SUMMARY OF THE INVENTION The present invention is intended to prevent the deterioration of contrast due to stray light as described above, and as shown in FIG. 1, it is provided on at least one of the substrates constituting the liquid crystal panel. A layer 109 that absorbs light is provided in a part of the periphery of the metal wiring of the active element to suppress the generation of stray light.

In FIG. 1, the metal wiring 104 is provided directly on the substrate, but this figure shows the outline of only the necessary elements. Actually, if necessary, above this wiring, A film having other functions is provided below.

The light absorbing layer 109 does not generate stray light but rather has a function of reducing stray light. If the material used is a black material, it can absorb light, but a liquid crystal material. In consideration of the influence on the active element and the electrode material, a thin film containing carbon as a main component formed by a vapor phase method (for example, diamond-like carbon,
Amorphous carbon), black organic material films for electronic materials, metal oxide films, etc. were applicable.

As for the positional relationship of the light absorption layer with respect to the metal wiring, various modes can be considered as shown in FIG. Figure 4
In (A), the light absorption layer 109 is provided on the surface of the metal wiring 104 opposite to the substrate. In this case, the method for forming the light absorption layer is roughly as follows: A film containing carbon as a main component is formed on the entire surface of the metal wiring formed on the substrate by a vapor phase method. The coating 109 is then etched away using a photolithography process. At this time, it is also possible to make light incident from the substrate side at the time of exposure of the photoresist and use the metal wiring as a mask to form the wiring and the self-alignment.

In the case of FIG. 1, after forming a coating film containing carbon as the main component on the entire surface of the substrate, a metal wiring material is formed on the entire surface, and then a metal mask is used to form the metal wiring. And the light absorption layer can be simultaneously formed in the same step.
4B and 4C can be formed by a combination of these steps.

On the other hand, FIG. 4D shows that the light absorbing layer 110 is formed by printing an organic resin containing a black dye in an epoxy resin directly on the metal wiring by a printing method. The pattern at the time of changing is arbitrarily changed to the pixel electrode 1
It is formed between 02 and 103. Thus, when most of the metal wiring is covered with the substrate and the light absorbing layer of the organic resin, the effect of suppressing the leakage of the electric signal between the metal wiring and the pixel electrode or the metal wiring can be expected at the same time. Also,
The coating film 9 containing carbon as a main component formed by the vapor phase method is formed by the above-mentioned method, but it can be omitted if necessary.

The structure shown in FIG. 4C may be formed by directly oxidizing the exposed surface of the metal wiring. For example, when the metal wiring is aluminum, the surface is alumite treated. Alternatively, black alumite may be formed on the surface. Further, generally, when the surface of the metal wiring is oxidized to form a lower oxide film instead of a complete oxide film, the surface becomes black and a light absorption layer can be formed.

Further, there are various embodiments of the positional relationship between the light absorption layer, the substrate and the electrodes, depending on the structure of the liquid crystal panel adopted and the structure of the active element. In that case, it may be adopted in consideration of the number of steps for forming and cost.

Further, FIG. 4 shows only the constituent elements necessary for showing the positional relationship between the light absorption layer, the substrate, and the electrodes, and is not intended to be limited to this structure.
There are many other components in an actual liquid crystal panel.

When forming a coating film containing carbon as a main component by a vapor phase method, a hydrocarbon gas such as ethylene or methane is decomposed by applying heat or electric energy to form a coating film. The carbon film formed is transparent or semi-transparent and cannot be used as it is as a light absorbing layer, so it needs to be blackened. As a method for forming this blackened carbon film, a plasma CVD apparatus is used, and a hydrocarbon gas (for example, a saturated unsaturated hydrocarbon such as acetylene, ethylene, ethane, etc.) is used as a reactive gas, A high-frequency (13.56 MHz) power is applied to decompose and activate the film to form a film. At this time, a negative bias voltage higher than the ground potential is applied to the film-forming substrate to form a blackened carbon film. I can do things.

Specifically, 10 SCCM of ethylene gas is flown into the reaction chamber, the pressure in the reaction chamber is 0.05 torr, and Rf.
The output was 60 W, the substrate temperature was not particularly set, and a substrate bias voltage of −700 V was applied. At this time, the higher the bias voltage applied to the substrate is, the more blackened the film can be formed. When the bias voltage is -100 V or more, the film is almost transparent, but when the bias voltage exceeds that value, the blackened film is formed. To be done. Regarding the electrical characteristics of this film, a conductivity of the order of 10 ⁻⁷ Scm was obtained, and the dielectric constant was 3.03, which was a low dielectric constant film.

When patterning this carbon film as shown in FIGS. 1 and 4, an etching gas such as oxygen or NF ₃ can be used for patterning, and a sufficient selection ratio with respect to other films can be obtained. be able to.

[0027]

[Embodiment 1] This embodiment shows an example in which a thin film transistor having a complementary structure is formed on one pixel electrode as an active element.

In this embodiment, a liquid crystal display device will be described by using a liquid crystal display device having a circuit configuration as shown in FIG. 5, that is, an inverter type circuit configuration. FIG. 6 shows an actual arrangement configuration of electrodes and the like corresponding to this circuit configuration. For simplicity of description, only the portion corresponding to 2 × 2 is shown.

First, a method of manufacturing the liquid crystal electro-optical device used in this embodiment will be described with reference to FIGS. In FIG. 7A, a silicon oxide film as a blocking layer 51 is formed on a glass 50, such as quartz glass, which can withstand a heat treatment at 700 ° C. or less, for example, about 600 ° C., which is not expensive, by using a magnetron RF (radio frequency) sputtering method. Produce to a thickness of ~ 3000Å. Process conditions are 100% oxygen atmosphere, film forming temperature 15 ° C., output 400 to 800 W, pressure 0.5 Pa.
And The film formation rate using quartz or single crystal silicon for the target was 30 to 100 Å / min.

A silicon film was formed thereon by LPCVD (Low Pressure Vapor Phase) method, sputtering method or plasma CVD method. When forming by the reduced pressure vapor phase method, it is 1
450-550 ° C, which is low by 00-200 ° C, for example, 530 ° C
Then, disilane (Si ₂ H ₆ ) or trisilane (Si ₃ H ₈ ) was supplied to the CVD apparatus to form a film. The reactor pressure is 30 ~
It was set to 300 Pa. The film formation rate was 50 to 250 Å / min. In order to control the threshold voltage (Vth) of the NTFT and the PTFT to be approximately the same, boron may be added during film formation using diborane at a concentration of 1 × 10 ¹⁵ to 1 × 10 ¹⁸ cm ⁻³ .

When the sputtering method is used, the back pressure before the sputtering is set to 1 × 10 ⁻⁵ Pa or less, the single crystal silicon is used as a target, and the atmosphere is mixed with hydrogen of 20 to 80% in argon. For example, argon is 20% and hydrogen is 80%. The film forming temperature is 150 ° C., the frequency is 13.56 MHz,
The sputter output was 400 to 800 W and the pressure was 0.5 Pa.

When a silicon film is formed by the plasma CVD method, the temperature is, for example, 300 ° C., and monosilane (SiH ₄ ) or disilane (Si ₂ H ₆ ) is used. These were introduced into a PCVD apparatus, and high-frequency power of 13.56 MHz was applied to form a film.

The coating formed by these methods is
It is preferable that oxygen is 5 × 10 ²¹ cm ⁻³ or less. If this oxygen concentration is high, it is difficult to crystallize, and the thermal annealing temperature must be high or the thermal annealing time must be long. If the amount is too small, the leak current in the off state increases due to the backlight. Therefore 4 × 10 ¹⁹ -4
The range was × 10 ²¹ cm ^-3 . Hydrogen was 4 × 10 ²⁰ cm ^-3 , which was 1 atom% when compared with silicon 4 × 10 ²² cm ^-3 . In order to further promote crystallization with respect to the source and drain, the oxygen concentration is set to 7 × 10 ¹⁹ cm ⁻³ or less, preferably 1 × 10 ¹⁹ cm ⁻³ or less, and a TFT for forming a pixel is formed.
Oxygen only in the channel formation region of
You may add so that it may become x10 < ²⁰ > -5 * 10 < ²¹ > cm < ^-3 >. At that time, since the TFTs constituting the peripheral circuit are not irradiated with light, it is effective to operate at a high frequency by reducing the mixing of oxygen and increasing the carrier mobility.

Next, a silicon film in an amorphous state is formed into 500
~ 5,000 Å, for example, 1500 Å after making, 4
Medium temperature heat treatment in a non-oxide atmosphere at a temperature of 50 to 700 ° C. for 12 to 70 hours, for example, 600 in a hydrogen atmosphere.
Hold at a temperature of ° C. Since the amorphous silicon oxide film is formed on the surface of the substrate under the silicon film, no specific nuclei are present in this heat treatment, and the whole is uniformly annealed by heating. That is, it has an amorphous structure at the time of film formation, and hydrogen is simply mixed therein.

By annealing, the silicon film shifts from an amorphous structure to a highly ordered state, and a part thereof assumes a crystalline state. In particular, a region having a relatively high degree of ordering after the film formation of silicon tends to be crystallized and become a crystalline state. However, since silicon existing between these regions is bonded to each other, the silicon members pull each other. A single crystal silicon peak 522 measured by laser Raman spectroscopy
A peak shifted to the low frequency side from cm ^-1 is observed. The apparent particle size is 50 to 5 when calculated from the full width at half maximum.
Although it is a microcrystal like 00Å, in reality there are many highly crystalline regions with a cluster structure, and each cluster has a semi-amorphous structure in which silicon is bonded (anchoring) to each other. Could be formed.

As a result, the coating is in a state in which it may be said that it is substantially free of grain boundaries (hereinafter referred to as GB). Carriers can easily move from one cluster to another through anchored points, so
The carrier mobility is higher than that of polycrystalline silicon that clearly exists. That is, hole mobility (μh) = 10 to ²⁰⁰ cm ²
/ VSec, electron mobility (μe) = 15 to 300 cm ² /
VSec is obtained.

On the other hand, when the film is polycrystallized by high-temperature annealing at 900 to 1200 ° C. instead of annealing at the intermediate temperature as described above, segregation of impurities in the film occurs due to solid-phase growth from nuclei, and GB is in GB. The amount of impurities such as oxygen, carbon, and nitrogen increases, and the mobility in the crystal is high, but it creates a barrier in GB and hinders the movement of carriers there. As a result, it is difficult to obtain a mobility of 10 cm ² / VSec or more. That is, in this embodiment, the silicon semiconductor having the semi-amorphous or semi-crystal structure is used for the reason as described above.

On this, a silicon oxide film was formed as a gate insulating film to a thickness of 500 to 2000Å, for example, 1000Å. This was performed under the same conditions as the production of the silicon oxide film as the blocking layer. During this film formation, a small amount of fluorine may be added to immobilize sodium ions.

Thereafter, phosphorus is added to the upper side in an amount of 1 to 5 × 10 ²¹
A silicon film having a concentration of cm ^-3 or this silicon film and molybdenum (Mo), tungsten (W), M on it
A multilayer film with oSi ₂ or WSi ₂ was formed. This is patterned with a second photomask, and the pattern shown in FIG.
Got A gate electrode 9 for PTFT and a gate electrode 19 for NTFT were formed. For example, a channel length is 10 μm, phosphorus-doped silicon is formed as a gate electrode in 0.2 μm, and molybdenum is formed thereon in a thickness of 0.3 μm. FIG. 7 (C)
In the above, a photoresist 57 was formed using a photomask, and boron was added to the source 10 and the drain 12 for PTFT by an ion implantation method at a dose amount of 1 to 5 × 10 ¹⁵ cm ^-2 . Next, as shown in FIG. 7D, NTF
T was formed using a photomask. 1 to 5 × 10 ¹⁵ cm of phosphorus is used as the source 20 and the drain 18 for the NTFT.
^It was added by the ion implantation method at a dose amount of ^-2 .

These are performed through the gate insulating film 54. However, in FIG. 7B, the gate electrodes 55 and 56 are
The silicon oxide on the silicon film may be removed by using as a mask, and then boron and phosphorus may be directly ion-implanted into the silicon film.

Next, heating anneal was performed again at 600 ° C. for 10 to 50 hours. The source 10 and the drain 12 of the PTFT and the source 20 and the drain 18 of the NTFT were activated as impurities to be prepared as P ⁺ and N ⁺ . Channel forming regions 21 and 11 are formed below the gate electrodes 9 and 19 as semi-amorphous semiconductors.

In this way, the C / TFT can be manufactured without applying a temperature above 700 ° C. in all steps even though it is a self-aligned method. Therefore, it is not necessary to use an expensive substrate such as quartz as the substrate material, and the process is very suitable for the large-pixel liquid crystal display device of the present invention.

In this embodiment, thermal annealing is performed as shown in FIG.
Done twice in (D). However, the annealing of FIG. 7A may be omitted depending on the desired characteristics, and both may be performed by the annealing of FIG. 7D to reduce the manufacturing time. In FIG. 7E, an interlayer insulator 65 was formed as a silicon oxide film by the above-described sputtering method. The silicon oxide film may be formed by using the LPCVD method, the photo CVD method, or the atmospheric pressure CVD method. For example, it is formed to have a thickness of 0.2 to 0.6 μm, and then a window 66 for an electrode is formed using a photomask. Further, aluminum is formed as a metal wiring material on the whole by a sputtering method. A film containing carbon as a main component is formed thereon as a light absorbing layer. The formation conditions are ethylene gas 20 SCCM and reaction pressure 0.05 Tor.
The film was formed to a thickness of 2000Å with r, Rf output of 70 W, and substrate bias voltage of -500V. Next, a resist pattern is formed using a photomask, the carbon film is removed by plasma etching using oxygen gas, and then the resist pattern or the patterned carbon film is used as a mask to remove chlorine gas and carbon tetrafluoride. Plasma etching was performed using a mixed gas to form the metal wirings 71 and 72 and the light absorption layer 109 in the same step.

The metal wiring and the light absorption layer are shown by X in FIG.
Black stripes are observed from the outside of the liquid crystal panel, which correspond to the wirings 5, 6, 7, 8 in the direction.

Next, an organic resin 69 for flattening the surface, for example, a light-transmissive polyimide resin was applied and formed, and electrode holes were formed again using a photomask.

As shown in FIG. 7 (F), two TFTs have a complementary structure, and the output terminal thereof is connected to the electrode of one pixel of the liquid crystal device as a transparent electrode. Tin oxide film) was formed. It was etched with a photomask to form the pixel electrode 17. This ITO film was formed at room temperature to 150 ° C. and was annealed at 200 to 400 ° C. in oxygen or air.

In this way, the PTFT 22 and the NTFT are
13 and these metal wirings and the light absorption layer 109 were formed on the same glass substrate 50. The characteristics of the obtained TFT are PT
FT has a mobility of 20 (cm ² / VS) and a Vth of -5.9.
(V), NTFT has a mobility of 40 (cm ² / VS), V
th was 5.0 (V).

The structure of the TFT on the liquid crystal electro-optical device described above is of the inverter type, but it goes without saying that the structure of the buffer type is exactly the same. In this way, the first substrate was obtained.

As the other substrate, a similar glass substrate provided with transparent electrodes on almost the entire surface is used as the second substrate. A polyimide solution diluted with NMP (N-methyl-2pyrrolidone) was printed on the transparent electrodes of the first substrate and the second substrate by an offset printing method, and after that, after calcination at 50 ° C. for 10 minutes, Main baking is performed for 1 hour in a nitrogen atmosphere at 280 ° C. to form an alignment film. Next, only the second substrate on which the active element is not formed is subjected to rubbing treatment, and the first substrate and the second substrate are bonded together with a spacer having a diameter of 7.5 μm sandwiched therebetween to complete a liquid crystal cell. Then, a liquid crystal material was injected into this cell to complete a liquid crystal electro-optical device.

The liquid crystal panel manufactured in this embodiment has a stray light reduced by about 10 to 50% and a contrast ratio value improved from 25 to 32 as compared with the conventional liquid crystal panel.

[Embodiment 2] In the present embodiment, an M x using a Si _X C _Y (X + Y = 1) film as an active element.
An example of an IM element will be shown.

As shown in FIG. 8 (A), a 0.7 mm polycarbonate (200) is first provided with a silicon oxide film (201) of 1000 to 3000 liters by RF sputtering. Next, a film containing carbon as a main component is formed to a thickness of 2000 Å on the entire surface of the substrate (the forming method is the same as that of the first embodiment), and then metal molybdenum is formed on the entire surface by a sputtering method and then the width is 15 μm.
Using a m-shaped stripe mask pattern, the light absorption layer 202 and the metal wiring 203 having substantially the same shape are formed by a dry etching method.

Next, as shown in FIG.
On the entire surface of the substrate including the above, glow discharge was performed under the following conditions by a plasma CVD method to form a Si _x C _Y (X + Y = 1) film (204) of 1000 Å. The film forming conditions are as follows: gas mixture ratio C ₂ H ₄ is ₂ SCCM, SiH ₄ is 1 SCCM, P
H ₃ (5% by weight) / SiH ₄ is 1 SCCM, H ₂ is 10
SCCM, reaction pressure 50Pa, RF power 1
It is 00W.

In this example, the addition of PH ₃ is
This is because the conductivity of the film (204) is changed to control the non-linear characteristics of the electrical characteristics of the active element, and it is effective to add it at a ratio of 30% by volume or less. As a method of controlling this nonlinearity, there is a method of applying thermal annealing. This is to control the hydrogen content in the film by measuring the dehydrogenation of the thin film (204) corresponding to the I (insulator) part of the MIM type element, and to control the non-linearity of the MIM type element. . In this embodiment, the processing conditions of this thermal annealing are as follows: temperature: 380 ° C., pressure: 100 Pa,
The processing atmosphere was Ar and the processing time was 1 hour. Further, in the present invention, the thin film (204) containing the composition represented by Si _X C _Y (X + Y = 1) has a thickness of 2000 Å or less, preferably 1000 Å or less to enhance its light transmittance. I was able to.

Materials conventionally used for the insulator part of the MIM type element, for example, TaO ₅ (tantalum pentaoxide).
When a film is used, its light transmissivity becomes a problem, so there is a restriction on the process such as making the area as small as possible.

After that, as shown in FIG. D again
ITO was deposited on the film (204) by the C sputtering method.
00 Å The film is formed and the pixel electrode (2
05) was obtained. In this case, the magnetron type RF sputtering method may be used.

The size of the electrode 205, which is one of the pixel electrodes, was a square having a side of 250 μm, and the gap between the pixels was 25 μm. The electrode (205) of this pixel has a size that becomes a unit pixel at the time of display, and acts so that the electric field applied to the thin film (204) becomes uniform in each pixel. In this way, one first substrate was obtained.

Polycarbonate was used as the second substrate as in the first substrate, and a silicon oxide film was formed as in the first substrate. A liquid crystal electro-optical device was completed in the same manner as in Example 1 except for the above, and a projection type image display device was constructed using this liquid crystal device. The contrast was high and stray light did not occur. The output of the light source used in the above can be made high (for example, 200 to 300 W), the display on the projected screen is very bright, and it is sufficiently visible even outdoors or in a bright room.

In each of the above-mentioned embodiments, the coating film containing carbon as the main component is used as the light absorption layer, but the present invention is not limited to this coating film, and a black organic resin may be used. By combining them, it is possible to fabricate a high-contrast liquid crystal device by further relaxing process restrictions.

[0060]

According to the structure of the present invention, it is possible to realize a liquid crystal electro-optical device with less generation of stray light, which improves the display contrast and realizes a projection type display device having a brighter display screen.

Further, a liquid crystal panel of higher density, higher definition and higher contrast can be realized, and a projection type image display device having a bright display screen can be realized.

[Brief description of drawings]

FIG. 1 shows a schematic sectional view of a liquid crystal electro-optical device of the present invention.

FIG. 2 shows an example of an optical system of a projection type display device.

FIG. 3 is a schematic sectional view of a conventional liquid crystal electro-optical device.

FIG. 4 is a schematic diagram showing a positional relationship between a light absorption layer of the present invention, a substrate, and electrodes.

FIG. 5 is a schematic circuit diagram of an active matrix liquid crystal device.

FIG. 6 is a schematic layout diagram of an active matrix type liquid crystal device.

7A to 7C are manufacturing process diagrams of a substrate for an active matrix liquid crystal device.

FIG. 8 is a manufacturing process diagram of a substrate for a liquid crystal device using an MIM element.

[Explanation of symbols]

102 ... Pixel electrode 103 ... Pixel electrode 104 ... Metal wiring 109 ... Light absorbing layer 110 ... Light absorbing layer

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[Procedure amendment]

[Submission date] June 29, 1992

[Procedure Amendment 1]

[Document name to be corrected] Drawing

[Correction target item name] All drawings

[Correction method] Change

[Correction content]

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[Figure 3]

[Fig. 2]

[Figure 4]

[Figure 5]

[Figure 6]

[Figure 7]

[Figure 8]

Claims (4)

[Claims] 1. A layer for absorbing light from a light source is provided on at least a part of a periphery of a metal wiring connected to a switching element on a substrate constituting a liquid crystal electro-optical device. Liquid crystal electro-optical device. 2. A liquid crystal electro-optical device, wherein the light absorption layer according to claim 1 is composed of a coating film containing carbon as a main component. 3. A liquid crystal electro-optical device, wherein the light absorption layer according to claim 1 is composed of an organic material film. 4. A liquid crystal electro-optical device in which a layer for absorbing light from a light source is provided on at least a part of the periphery of a metal wiring connected to a switching element on a substrate which constitutes the liquid crystal electro-optical device. An image display device characterized by being configured by using.