JPH02216129A - Liquid crystal image display device and production thereof - Google Patents

Liquid crystal image display device and production thereof

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Publication number
JPH02216129A
JPH02216129A JP1038612A JP3861289A JPH02216129A JP H02216129 A JPH02216129 A JP H02216129A JP 1038612 A JP1038612 A JP 1038612A JP 3861289 A JP3861289 A JP 3861289A JP H02216129 A JPH02216129 A JP H02216129A
Authority
JP
Japan
Prior art keywords
liquid crystal
insulated gate
image display
signal line
display device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1038612A
Other languages
Japanese (ja)
Other versions
JPH0816758B2 (en
Inventor
Kiyohiro Kawasaki
清弘 川崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3861289A priority Critical patent/JPH0816758B2/en
Publication of JPH02216129A publication Critical patent/JPH02216129A/en
Publication of JPH0816758B2 publication Critical patent/JPH0816758B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)

Abstract

PURPOSE:To block or drastically decrease the DC component to deteriorate a liquid crystal by flowing into a liquid crystal cell and to prevent the degradation of display image quality by coating the surfaces of signal lines and drain wirings consisting of Al with an insulating alumina film. CONSTITUTION:The thin conductive films 22 and signal lines 12 for connecting picture element electrodes 14 and the drains of insulated gate type transistors (TRs) on an active substrate 2 of an active type liquid crystal panel disposed with the insulated gate TRs as switching elements to each of the picture elements are formed of the same material Al. An anodic oxidation stage for selectively insulating only the signal lines 12 and the drain wirings 22 is introduced to this active substrate 2 to selectively form Al2O3 (alumina) films on the signal lines 12 and the drain wirings 22. Connecting lines 23 are cut if the active substrate 2 is cut along cutting lines 33 after the end of the anodic oxidation. The active substrate 2 is thus completed. The DC component flowing into the liquid crystal cell is blocked or drastically decreased by this active substrate 2.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は画像表示機能を有する液晶パネル、とりわけ絵
素毎にスイッチング素子を内蔵したアクティブ型の液晶
画像表示装置及びその製造方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a liquid crystal panel having an image display function, particularly an active type liquid crystal image display device in which each picture element has a built-in switching element, and a method for manufacturing the same.

従来の技術 近年の微細加工技術、液晶材料及び実装技術等の進歩に
より2−6インチ程度の小さなサイズではあるが、液晶
パネルで実用上支障ないテレビジョン画像が商用ベース
で得られるようになってきた。液晶パネルを構成する2
枚のガラス板の一方にROBの着色層を形成しておくこ
とによりカラー表示も容易に実現され、また絵素毎にス
イッチング素子を内蔵させた、いわゆるアクティブ型の
液晶パネルではクロストークも少なくかつ高いコントラ
スト比を有する画像が保証される。このような液晶パネ
ルは、走査線としては120−240本、It号線とし
ては240−720本程度のマド2リクス編成が橿準的
で、例えば第6図に示すように液晶パネルlを構成する
一方の透光性絶縁性基板、例えはガラス基板2上に形成
された走査線の電極端子群6に駆動信号を供給する半導
体集積回路チップ3を直接接続するC0G(Chip−
On−Glass)方式や、例えばポリイミド系樹脂薄
膜をベースとし、金メツキされた銅箔の端子群(図示せ
ず)を有する接続フィルム4を信号線の電極端子群5に
接着剤で圧接しながら固定する方式などの実装手段によ
って電気信号が画像表示部に供給される。
Conventional Technology Recent advances in microfabrication technology, liquid crystal materials, mounting technology, etc. have made it possible to obtain television images on a commercial basis with liquid crystal panels that are small in size, about 2 to 6 inches, but have no problem in practical use. Ta. Configuring the LCD panel 2
By forming a colored layer of ROB on one side of a glass plate, color display can be easily realized, and so-called active type liquid crystal panels, in which each picture element has a built-in switching element, have little crosstalk. An image with a high contrast ratio is guaranteed. Such a liquid crystal panel typically has a matrix configuration of 120 to 240 scanning lines and 240 to 720 It lines, for example, as shown in Figure 6, a liquid crystal panel L is configured. A C0G (Chip-
For example, a connection film 4 based on a polyimide resin thin film and having a terminal group of gold-plated copper foil (not shown) is pressed onto an electrode terminal group 5 of a signal line using an adhesive. Electric signals are supplied to the image display section by mounting means such as a fixing method.

ここでは便宜1二つの実装方式を同時に図示しているが
、実際にはいずれかの実装方式が選ばれることは言うま
でもない。なお、7.8は液晶パネルl中央の画像表示
部と信号線及び走査線の電極端子群5.6との間を接続
する配線路で、必ずしも電極端子群と同じ導電材で構成
される必要はない。
Although two mounting methods are illustrated here for convenience, it goes without saying that one of the mounting methods is actually selected. Note that 7.8 is a wiring path that connects the image display section at the center of the liquid crystal panel l and the electrode terminal group 5.6 for signal lines and scanning lines, and it does not necessarily need to be made of the same conductive material as the electrode terminal group. There isn't.

9は全ての絵素に共通の透明導電性の対向電極を有する
もう1枚の透光性絶縁性基板であるガラス板で、2枚の
ガラス板2.9は石英ファイバやプラスチックビーズ等
のスペーサによって所定の距離を隔てて形成され、その
間隙はシール材と封口材で封止された閉空間になってお
り、閉空間には液晶が充填されている。多くの場合、ガ
ラス板の閉空間側に着色層と称する染料または顔料のい
ずれか一方もしくは両方を含む有機薄膜が被着されて色
表示機能が4えられるのでガラス基板9はカラーフィル
タと呼ばれる。そして液晶材の性質によってはガラス板
9−L面またはガラス板2下面のいずれかもしくは両面
上に偏光板が貼付され、液晶パネル1は電気光学素子と
して機能する。
9 is a glass plate which is another transparent insulating substrate having a transparent conductive counter electrode common to all picture elements, and the two glass plates 2.9 are spacers such as quartz fibers or plastic beads. The gap is a closed space sealed with a sealing material and a sealing material, and the closed space is filled with liquid crystal. In many cases, the glass substrate 9 is called a color filter because a colored layer, an organic thin film containing one or both of dyes and pigments, is deposited on the closed space side of the glass plate to provide a color display function. Depending on the properties of the liquid crystal material, a polarizing plate is pasted on either or both of the glass plate 9-L surface or the lower surface of the glass plate 2, and the liquid crystal panel 1 functions as an electro-optical element.

第7図は、スイッチング素子として絶縁ゲート型トラン
ジスタ10を絵素毎に配置したアクティブ型液晶パネル
の等価回路図であり、第8図は同パネルの要部断面図で
ある。実線で描かれた素子は一方のガラス基板2上に、
そして破線で描かれた素子はもう一方のガラス基板9七
に形成されている。走査線11 (8)と信号線12(
7)は、例えは非晶質シリコンをミド導体層とし、シリ
コン窒化膜 (SNN4)をゲート絶縁膜とする薄膜トランジスタ1
0の形成と同時にガラス基板2上に作製される。液晶セ
ル13はガラス基板2上に形成された透明導電性の絵素
電極14と、カラーフィルタ9上に形成された同じく透
明導電性の対向電極】5と、2枚のガラス板で構成され
た閉空間を満たす液晶16とて構成され、電気的にはコ
ンデンサと同じ扱いを受ける。
FIG. 7 is an equivalent circuit diagram of an active liquid crystal panel in which an insulated gate transistor 10 is arranged as a switching element for each picture element, and FIG. 8 is a sectional view of a main part of the panel. The elements drawn with solid lines are on one glass substrate 2,
The elements drawn with broken lines are formed on the other glass substrate 97. Scanning line 11 (8) and signal line 12 (
7) is a thin film transistor 1 in which, for example, amorphous silicon is used as a mid-conductor layer and a silicon nitride film (SNN4) is used as a gate insulating film.
0 is produced on the glass substrate 2 at the same time. The liquid crystal cell 13 is composed of two glass plates: a transparent conductive pixel electrode 14 formed on a glass substrate 2, and a transparent conductive counter electrode 5 formed on a color filter 9. It is composed of a liquid crystal 16 that fills a closed space, and is treated electrically in the same way as a capacitor.

着色された感光性ゼラチンまたは着色性感光樹脂等より
なる着色[17は先述したように、カラーフィルタ9の
閉空間側で絵素電極14に対応してROBの三原色で所
定の配列に従って配置されている。全ての絵素電極14
に共通の対向電極15は着色P!17の存在による電圧
配分損失を避けるためには図示したように着色層17上
に形成される。液晶16に接して2枚のガラス板上に被
着された、例えば0.1μrn程度の膜厚のポリイミド
系樹脂薄膜N18は液晶分子を決められた方向に揃える
ための配向膜である。加えて液晶16にツイスト・ネマ
チック(T N)型のものを用いる場合には上下に2枚
の偏光板19を必要とする。
Coloring made of colored photosensitive gelatin or colored photosensitive resin [17, as mentioned above, is arranged in the three primary colors of ROB according to a predetermined arrangement on the closed space side of the color filter 9 corresponding to the picture element electrode 14. There is. All picture element electrodes 14
The common counter electrode 15 is colored P! In order to avoid voltage distribution loss due to the presence of the layer 17, the layer 17 is formed on the colored layer 17 as shown. A thin polyimide resin film N18 having a thickness of, for example, about 0.1 μrn, which is deposited on the two glass plates in contact with the liquid crystal 16, is an alignment film for aligning liquid crystal molecules in a predetermined direction. In addition, if a twisted nematic (TN) type liquid crystal is used as the liquid crystal 16, two polarizing plates 19 are required, one above and the other.

RGBの着色層17の境界に低反射性の不透明膜20を
配置すると、ガラス基板2上の信号線等の配線層からの
反射光を防止できてコントラスト比が向上し、またスイ
ッチング素子10の外部光照射によるリーク電流の増大
が防げて強い外光の下でも動作させることが可能となり
、ブラックマトリクスとして実用化されている。ブラッ
クマトリクス材の構成も多数考えられるが、着色層の境
界に於ける段差の発生状況と光の透過率を考慮すると、
コスト高にはなるが0.1μm程度の膜厚のCr渾膜が
簡便である。
When a low-reflectivity opaque film 20 is arranged at the boundary of the RGB colored layer 17, reflected light from wiring layers such as signal lines on the glass substrate 2 can be prevented, the contrast ratio is improved, and the external part of the switching element 10 can be prevented. This prevents an increase in leakage current due to light irradiation, making it possible to operate even under strong external light, and has been put into practical use as a black matrix. There are many possible configurations of the black matrix material, but considering the occurrence of steps at the boundaries of colored layers and the light transmittance,
A Cr filtration film with a thickness of about 0.1 μm is convenient, although the cost is high.

なお、第7図においてTt積容ff121はアクティブ
型の液晶パネルとしては必ずしも必須の構成要素とは限
らないが、駆動用信号源の利用効率の向上、浮遊寄生容
重の障害の抑制及び高温動作時の画像のちらつき(フリ
ッカ)防止等には効果的存在で適宜採用される。また理
解を簡単にするため、薄膜トランジスタ10、走査線1
1、及び蓄積容量21に加えて光源やスペーサ等の主要
因子は第6図では省略されている。22は絵素電極14
と絶縁ゲート型トランジスタ10のドしインとを接続す
るための導電性薄膜で、−船釣には信号線12と同一の
材質で同時に形成される。
Note that in FIG. 7, the Tt volume ff121 is not necessarily an essential component for an active liquid crystal panel, but it is useful for improving the utilization efficiency of the driving signal source, suppressing disturbances caused by stray parasitic loads, and during high temperature operation. It is effective in preventing flickering in images and is appropriately employed. Also, to simplify understanding, thin film transistor 10, scanning line 1
In addition to the storage capacitor 21 and the storage capacitor 21, main factors such as a light source and a spacer are omitted in FIG. 22 is the picture element electrode 14
This is a conductive thin film for connecting the signal line 12 and the input line of the insulated gate transistor 10, and is formed of the same material as the signal line 12 at the same time.

発明が解決しようとする課題 しかし、アクティブ型の液晶パネルにおいては、デバイ
ス構造が複雑なために全ての液晶セル13が同等の条件
で駆動されに<<、従って表示画像がちらついて見える
現象が発生し易い。画像のちらつきはフリッカとも呼ば
れ、単純マトリクス編成の液晶パネルにおいても斜めか
ら観測したり、駆動信号に直流成分が多く含まれている
と発生することは公知の事実である。フリッカを低減さ
せるには全ての液晶セルが同等の駆動状態となるべく構
成素子である液晶セル13.絶縁ゲート型トランジスタ
10及び蓄積容量21を高精度で製作する方法と、隣合
った液晶セル13を逆位相で駆動し液晶パネル全体とし
ては観測されないように視覚的に逃れる方法とがある。
Problems to be Solved by the Invention However, in active type liquid crystal panels, because the device structure is complex, all liquid crystal cells 13 are driven under the same conditions, resulting in a phenomenon in which the displayed image appears to flicker. Easy to do. Flickering in an image is also called flicker, and it is a well-known fact that it occurs even in a simple matrix liquid crystal panel when it is observed from an oblique angle or when the drive signal contains a large amount of DC component. In order to reduce flicker, the liquid crystal cells 13, which are constituent elements, should be set so that all liquid crystal cells are in the same driving state. There are two methods: one is to manufacture the insulated gate transistor 10 and the storage capacitor 21 with high precision, and the other is to drive adjacent liquid crystal cells 13 in opposite phases so that the liquid crystal panel as a whole is not observed visually.

前者においてはアクティブ基板やパネル紺み立ての製作
条件が厳しくなるだけでなく、大きい蓄積容量が必要と
なって歩留まりを下げたり閉口率を下げるなどの欠点が
クローズアップされ、後者においてはフリッカは見かけ
上減少しているものの、対向電極15を一定の電圧で保
持して交流駆動するために信号電圧が高くなり、従って
フリッカの原因である液晶セル間の微小なばらつき直流
電圧成分も増しているため長間閏の使用に対して液晶が
劣化して褐色化し、画像品質を損なうといった欠点があ
った。
In the former case, not only are the manufacturing conditions for the active substrate and panel dark blue finish stricter, but also a large storage capacity is required, which lowers the yield and closure rate. However, since the counter electrode 15 is held at a constant voltage and AC driven, the signal voltage becomes higher, and therefore the DC voltage component due to minute variations between liquid crystal cells, which causes flicker, also increases. When using a long leap, the liquid crystal deteriorated and turned brown, impairing image quality.

本来は第8図に示したように有機薄膜の配向膜18が絶
縁性の機能を発揮して信号線12、ドレイン配線22そ
して絵素電極14等の導電性電極の表面を絶縁化できれ
ば、絵素電極14と対向電極15と液晶[16とよりな
る液晶セル13に直流電流が流れ込む事はなく、液晶層
16の劣化は生じないはずである。ところが配向膜18
は先述したように0.171tn程度と薄いこと、−船
釣な配向膜の塗布方法がオフセット印刷のためビン・ホ
ールを内在させ易いこと、そしてアクティブ素子が熱破
壊しないように300℃以下の比較的低温で配向膜のキ
ュア(熱硬化)が実施されていることなどの理由により
配向膜18単独では信号線12、ドレイン配線22そし
て絵素電極14などの表面を不完全にしか絶縁化出来ず
、程度の差はあれ液晶F’16の劣化を阻止することが
困難となっている。特に信号線12には信号電圧が外部
から供給され続けるので対向電極15との間には直流成
分が流れ易い。そこで薄い配向膜に代わって第9図に示
したようにアクティブ基板2上で全面に透明絶縁性被膜
23として、例えばSi3N4を、0.5μm程度の膜
厚でコーティングすることによって液晶N16の劣化を
回避する事が出来ることは容易に理解されよう。
Originally, as shown in FIG. 8, if the alignment film 18, which is an organic thin film, could exhibit an insulating function and insulate the surfaces of conductive electrodes such as the signal line 12, drain wiring 22, and pixel electrode 14, the picture would be as follows. No direct current will flow into the liquid crystal cell 13 consisting of the elementary electrode 14, the counter electrode 15, and the liquid crystal [16], and no deterioration of the liquid crystal layer 16 should occur. However, the alignment film 18
As mentioned earlier, it is thin at about 0.171 tn, - The alignment film coating method is offset printing, which tends to cause holes and holes, and the temperature is below 300°C to prevent active elements from being destroyed by heat. Due to the fact that the alignment film is cured (thermally cured) at a relatively low temperature, the surfaces of the signal line 12, drain wiring 22, pixel electrode 14, etc. can only be incompletely insulated using the alignment film 18 alone. Although there are differences in degree, it is difficult to prevent the deterioration of the liquid crystal F'16. In particular, since a signal voltage is continuously supplied to the signal line 12 from the outside, a DC component tends to flow between the signal line 12 and the counter electrode 15. Therefore, instead of using a thin alignment film, as shown in FIG. 9, the entire surface of the active substrate 2 is coated with Si3N4 as a transparent insulating film 23 with a thickness of about 0.5 μm, thereby preventing the deterioration of the liquid crystal N16. It is easy to understand that it can be avoided.

しかしながら全面に厚いパシベーションN23を被着形
成することは製作工程が長くなるのと、!2素電極14
上に絶縁層が介在して液晶層16に印可される電圧が低
下する意味で好ましいものとはSえない状況である。後
者については絵素電極14上のパシベーションN23を
選択的に除去することは可能であるが、絵素電極14上
あるいは絵素電極14のごく近傍にパシベーション層の
高い段差が存在すると配向膜18の乾燥布によるラビン
グ処理が規則的に行われず、液晶の配向が乱れて逆ドメ
インを生じ表示画質が低下する副作用が発生していた。
However, forming thick passivation N23 on the entire surface requires a long manufacturing process! Two-element electrode 14
This is not a preferable situation since the voltage applied to the liquid crystal layer 16 is reduced due to the presence of an insulating layer thereon. Regarding the latter, it is possible to selectively remove the passivation N23 on the picture element electrode 14, but if there is a high level difference in the passivation layer on the picture element electrode 14 or in the very vicinity of the picture element electrode 14, the alignment film 18 may be removed. The rubbing process with a dry cloth was not performed regularly, causing side effects such as disordering the orientation of the liquid crystal, creating reverse domains, and deteriorating the display image quality.

本発明は、このような従来技術の課題を解決することを
目的とする。
The present invention aims to solve the problems of the prior art.

課題を解決するための手段 本発明は、A1よりなる信号線とドレイン配線上のみを
選択的に絶縁化するために陽極酸化工程を導入し、Al
203(アルミナ)膜を信号線とドレイ5ノ配線上に選
択的に形成するものである。
Means for Solving the Problems The present invention introduces an anodic oxidation process to selectively insulate only the signal line and drain wiring made of Al.
A 203 (alumina) film is selectively formed on the signal line and the drain 5 wiring.

作用 信号線とドレイン配線上にのみ絶縁物であるアルミナ薄
膜が選択的に形成されるため、液晶層に印可される電圧
の低下はなく、またパシヘーション層の被着工程は不要
となって、製作工程の短縮化が促進される。
Since the alumina thin film, which is an insulator, is selectively formed only on the working signal lines and drain wiring, there is no drop in the voltage applied to the liquid crystal layer, and there is no need for a process to apply a passivation layer, making manufacturing easier. Process shortening is promoted.

実施例 以下に、本発明の実施例を図面を参照して説明劣る。Example Hereinafter, embodiments of the present invention will be described with reference to the drawings.

以下、本発明の実施例について第1図から第5図を参照
しながら説明する。第1図は本発明の第1の実施例にか
かる液晶画像表示装置を構成するアクティブ基板2上の
パターンを示す。陽極酸化では酸化膜を成長させたい配
線は全て電気的に接続しておく必要があり、信号線12
は端子電極5を経由して共通の接続線23に接続され、
接続線23はガラス基Fi2の周辺部の、べたパターン
である接続部24に接続されている。接続線23と接続
部24は信号線12と同じA1で形成されている。第1
図に示したアクティブ基板2は、第2図に示したように
化成液25で満たされた容器26中に設置され、直流型
aff27より供給される+(プラス)端子28はアク
ティブ基板2の接続部23にクリップ等の治具を用いて
接続され、また−(マイナス)端子29は金や白金等の
電極板30に接続される。A1の陽極酸化に当り、蓚酸
や硫酸を主成分とする化成液では有孔性の酸化アルミナ
ラム(アルミナ、Al201)が成長し、はう酸を含む
エチレングリコール化成液では無孔性の緻密なアルミナ
が成長する事は公知であるが、A1の陽極酸化の詳細に
ついては先願例である特公昭59−34798号公報に
示されている。何れにせよ、陽極酸化においては化成液
の濃度と温度が一定の下では成長する酸化膜の膜厚は化
成電圧によって決定されるので、適当な条件を選定すれ
ば第;3図に示したように例えばIBmの膜厚を有する
A1の信号線12上にo、i−o、aμm程度のアルミ
ナ膜31を形成することは極めて容易である。ドレイン
配!I22には絶縁ゲート型トランジスタのチャネル抵
抗を通していくらかの電流が流れるので、陽極酸化時に
強い外光をアクティブ基板2に照射するとチャネル抵抗
が低下してドレイン配線22の表面にも酸化膜32が成
長しやすいが、チャネル抵抗はA1に比べると桁違いに
抵抗が高いので、ドレイン配線22上にも信号線12と
同じ膜厚のアルミナ膜が成長するまで陽極酸化を長時間
継続することは非効率的であろう。陽極酸化終了後には
、第1図に示したようにアクティブ基板2を切断線33
に沿って切断すれば、接続線23の切断とともに電極端
子5が独立してアクティブ基板2が完成する。
Embodiments of the present invention will be described below with reference to FIGS. 1 to 5. FIG. 1 shows a pattern on an active substrate 2 constituting a liquid crystal image display device according to a first embodiment of the present invention. In anodic oxidation, it is necessary to electrically connect all the wiring on which you want to grow an oxide film, and the signal line 12
is connected to the common connection line 23 via the terminal electrode 5,
The connection line 23 is connected to a connection portion 24 which is a solid pattern at the periphery of the glass substrate Fi2. The connection line 23 and the connection part 24 are made of the same A1 material as the signal line 12. 1st
The active substrate 2 shown in the figure is installed in a container 26 filled with a chemical liquid 25 as shown in FIG. 23 using a jig such as a clip, and the - (minus) terminal 29 is connected to an electrode plate 30 made of gold, platinum, or the like. When anodizing A1, a chemical solution containing oxalic acid or sulfuric acid as the main component grows porous alumina oxide (alumina, Al201), whereas an ethylene glycol chemical solution containing oxalic acid grows a non-porous, dense layer. Although it is known that alumina grows, details of the anodic oxidation of A1 are disclosed in Japanese Patent Publication No. 34798/1983, which is an example of an earlier application. In any case, in anodic oxidation, when the concentration and temperature of the chemical solution are constant, the thickness of the oxide film that grows is determined by the chemical formation voltage, so if appropriate conditions are selected, the thickness of the oxide film that grows will be as shown in Figure 3. For example, it is extremely easy to form an alumina film 31 with a thickness of approximately o, io, a μm on the A1 signal line 12 having a film thickness of IBm. Drain arrangement! Some current flows through I22 through the channel resistance of the insulated gate transistor, so when the active substrate 2 is irradiated with strong external light during anodic oxidation, the channel resistance decreases and an oxide film 32 grows on the surface of the drain wiring 22. However, since the channel resistance is an order of magnitude higher than that of A1, it is inefficient to continue anodizing for a long time until an alumina film with the same thickness as the signal line 12 grows on the drain wiring 22. Will. After the anodization is completed, the active substrate 2 is cut along the cutting line 33 as shown in FIG.
By cutting along the lines, the electrode terminals 5 become independent as the connecting wires 23 are cut, and the active substrate 2 is completed.

電極端子がCOG対応で小さな場合にはアクティブ基板
2の切断によって電極端子を独立させることは困堆であ
る。そのような場合には接続線23上に例えば感光性樹
脂パターンを選択的に形成しておき、陽極酸化終了後に
まず前記感光性樹脂パターンを除去し、ついでアルミナ
膜を食刻のマスクとしてA1を選択的に除去すれば電極
端子を独立させることが可能となる。
If the electrode terminal is compatible with COG and is small, it is difficult to separate the electrode terminal by cutting the active substrate 2. In such a case, for example, a photosensitive resin pattern is selectively formed on the connection line 23, and after the anodization is completed, the photosensitive resin pattern is first removed, and then A1 is etched using the alumina film as an etching mask. If selectively removed, it becomes possible to make the electrode terminals independent.

第1の実施例においては、アクティブ基板2の表面が露
出しており、化成液の純度管理が不十分であると化成液
中のイオン性不純物が絶縁ゲート型トランジスタに混入
してトランジスタ特性が不安定になる恐れと、信号線の
両端を接続線に接続しておくパターン配置上の余裕があ
れは対策は容易であるが、信号線に断線部が存在してい
る場合には陽FS酸化膜が成長しない領域が発生する欠
点がある。
In the first embodiment, the surface of the active substrate 2 is exposed, and if the purity of the chemical solution is insufficiently controlled, ionic impurities in the chemical solution will mix into the insulated gate transistor, causing the transistor characteristics to deteriorate. If there is a risk of stability and there is enough room in the pattern layout to connect both ends of the signal line to the connection line, countermeasures can be easily taken, but if there is a disconnection in the signal line, use a positive FS oxide film. The drawback is that there are areas where the growth does not occur.

第2の実施例においては、第4図に示すように、信号線
(ソース配wA)とドレイン配線となるAIFj34の
被着後に前記パターンの逆パターンで感光性樹脂層35
を周知のホトリソ・グラフィ工程で形成し、逆パターン
35を陽極酸化のマスクとしてA1層34の表面を選択
的に陽極酸化して36、37としている。陽極酸化終了
後に、感光性樹脂パターン35を除去し、陽極酸化膜3
6.37をマスクとしてA1層34を選択的に食刻して
第5図に示すアクティブ基板2が完成する。化成液中の
不純物は陽極酸化膜中に取り込まれ、絶縁ゲート型トラ
ンジスタの電気的な特性が不安定となる恐れは回避され
ている。
In the second embodiment, as shown in FIG. 4, after the AIFj 34 which becomes the signal line (source wiring wA) and the drain wiring is deposited, a photosensitive resin layer 35 is formed in a reverse pattern to the above pattern.
are formed by a well-known photolithography process, and the surface of the A1 layer 34 is selectively anodized using the reverse pattern 35 as a mask for anodic oxidation to form 36 and 37. After the anodization, the photosensitive resin pattern 35 is removed and the anodic oxide film 3 is removed.
Using 6.37 as a mask, the A1 layer 34 is selectively etched to complete the active substrate 2 shown in FIG. Impurities in the chemical solution are incorporated into the anodic oxide film, thereby avoiding the possibility that the electrical characteristics of the insulated gate transistor will become unstable.

第3図においては信号線12とドレイン配線22の全表
面がアルミナ膜31.32によってコーティングされて
いるが、第5図においては信号線12−1−とドレイン
配線22−Lとがアルミナ膜36.37でコーティング
され、信号線12とドレイン配線22の側面はA1が露
出している差異がある。
In FIG. 3, the entire surface of the signal line 12 and the drain wiring 22 is coated with an alumina film 31,32, but in FIG. .37, and the difference is that A1 is exposed on the sides of the signal line 12 and drain wiring 22.

信号線12とドレイン配線22のパターン幅は一般的に
は10μrn程度であるので、液晶16層の純度を充分
に高く維持出来るように、液晶材料や配向膜の不純物、
とりわけイオン性の不純物を除外できるならば、第2の
実施例においてもイオン性の不純物による直流電流成分
は従来例に比べて115程度に減少するので液晶の劣化
は大幅に改善されることが理解されよう。
Since the pattern width of the signal line 12 and the drain wiring 22 is generally about 10 μrn, impurities in the liquid crystal material and alignment film should be avoided in order to maintain the purity of the 16 liquid crystal layers sufficiently high.
In particular, if ionic impurities can be excluded, it is understood that in the second embodiment as well, the direct current component due to ionic impurities is reduced to about 115 compared to the conventional example, so the deterioration of the liquid crystal can be greatly improved. It will be.

アクティブ基板の構成に関し、絵素電極が厚み方向でど
の位置に形成されるかは絶縁ゲート型トランジスタの構
造と製作方法によって大きく左右されるので、上記説明
においては省略した。絵素電極は絶縁ゲート型トランジ
スタによって信号線とはスイッチ的にしか導通しないの
で、絵素電極と絶縁ゲート型トランジスタとを接続する
ドレイン配線は必ずしも表面を絶縁化する必要はないが
、絶縁ゲート型トランジスタが常時ONするような欠陥
が存在すると、その近辺で液晶の劣化が生じる可能性が
高く、本発明のようにドレイン配線も絶縁化する方が好
ましい。同じ理由で、絵素電極もアクティブ基板上の最
上層部に位置するのではなく、透明絶縁性のS i O
2や5i3Nnが絵素電極上に被着されている方が信頼
性の高い液晶画像表示装置が得られる。また信号線が絶
縁ゲート型トランジスタのソース配線を兼ねず、かつ絶
縁性被膜で覆われていないような場合にはソース配線に
対して信号線と同様な処置が必要なことは説明を要しな
いであろう。
Regarding the configuration of the active substrate, where the picture element electrodes are formed in the thickness direction largely depends on the structure and manufacturing method of the insulated gate transistor, so the explanation is omitted in the above description. The pixel electrode is only connected to the signal line in a switch-like manner by the insulated gate transistor, so the drain wiring that connects the pixel electrode and the insulated gate transistor does not necessarily need to have an insulated surface; If there is a defect where the transistor is always on, there is a high possibility that the liquid crystal will deteriorate in the vicinity, so it is preferable to insulate the drain wiring as well, as in the present invention. For the same reason, the picture element electrodes are also made of transparent insulating SiO rather than being located on the top layer on the active substrate.
When 2 or 5i3Nn is deposited on the picture element electrode, a more reliable liquid crystal image display device can be obtained. Furthermore, if the signal line does not also serve as the source wiring of an insulated gate transistor and is not covered with an insulating film, there is no need to explain that the same treatment as for the signal line is required for the source wiring. Probably.

発明の効果 以北述べたように、本発明は、液晶セルに流入して液晶
を劣化させる直流成分な阻止または大幅に減少させるた
めに、A1より成る信号線とドレイン配線の表面を絶縁
性のアルミナ膜でコーティングしている。このためフリ
ッカレス駆動を採用して高い信号電圧を印加しても液晶
層が劣化して表示画像が褐色に着色してみえる品質上の
課題を解決した。また特に膜厚を増加することなく信号
線とドレイン配線の表面を絶縁化できることにより、従
来の透明絶縁性薄膜による全面パシベーションと比べて
液晶セルに実効的に供給される電圧の低下を防ぐことが
M1能となり、表示画像が暗くなる恐れは皆無てあり、
配向膜の配向状態も維持できる等の優れた効果が得られ
た。
Effects of the Invention As described above, the present invention provides the surfaces of the signal line and drain wiring made of A1 with an insulating material in order to prevent or significantly reduce the direct current component that flows into the liquid crystal cell and deteriorates the liquid crystal. Coated with alumina film. For this reason, flickerless drive was adopted to solve the quality problem in which the liquid crystal layer deteriorates and the displayed image appears brown even when a high signal voltage is applied. In addition, by insulating the surfaces of signal lines and drain wiring without increasing the film thickness, it is possible to effectively prevent a drop in the voltage supplied to the liquid crystal cell compared to full-surface passivation using a conventional transparent insulating thin film. There is no risk that the display image will become dark due to the M1 function.
Excellent effects such as being able to maintain the alignment state of the alignment film were obtained.

【図面の簡単な説明】 第1図は本発明の第1の実施例にかかる液晶画像表示装
置を構成するアクティブ基板上のパターン図、第2図は
同装置における陽極酸化方法を示す概念的断面図、第3
図は同装置の基板の要部断面図、第4図と第5図は本発
明の第2の実施例にかかる液晶画像表示装置を構成する
アクティブ基板の製造工程におけろ要部断面図、第6図
は液晶パネルへの実装手段を示す斜視図、第7図はアク
ティブ型液晶パネルの等価回路図、第8図は同パネルの
要部断面図、第9図は液晶の劣化を防ぐために実施され
た従来例のアクティブ基板上のパシベーションを示す断
面図である。 l・・・液晶パネル、2・・・ガラス板、9・・・カラ
ーフィルタ、10・・・絶縁ゲート型トランジスタ、l
l・・・走査線、12・・・信号線、13・・・液晶セ
ル、14・・・絵素電極、15・・・対向電極、16・
・・液晶、18・・・配向膜、22・・・ドレイン配線
、23・・・接続線、24・・・へたパターン、25・
・・化成液、26・・・容器、27・・・直流電源、2
8・・・+(プラス)端子、29・・・−(マイナス)
端子、30・・・電極板、31.36・・・信号線上の
アルミナ膜、32.37・・・ドレイン配線上のアルミ
ナ膜、33・・・切断線、34・・・A1層、35・・
・感光性樹脂バター゛。 2−°− 5−・− 24−・− no−。 アクティづ1&蚤 電蚤鴨子 1tTa テ綺繍 べたパターン rn+tr* 第 図 2−  アワティつ裏板 j2−・−19寝 22−m−ド  し イ  ン E 鋪Iy−アルミニ
ウム壜 2・−7クテイ 25−fじi ++! プ纂板 謬−プラス端子 汐−・−フイナス扇子 30−t ii [ ■ 豫 晶 バ ネ 4−・授続フィルム 9−  刀フーフイルダ ++  −m− I2 −・・ +3−−− 15−・− JP縛ケート型トランジスタ 走1m l5号9 jl f@ t!ル 対拾Is 第 8 図 第9図 4−一 6−m− +9−−− n−・− 絵 素 1i 蚤 rT  凱 電量 清   晶 Wz  句 庸 漏 光 伝 ドレイン配欅 Q ?−・−カフス番数 I2−・−fW  号 欅
[Brief Description of the Drawings] Fig. 1 is a pattern diagram on an active substrate constituting a liquid crystal image display device according to a first embodiment of the present invention, and Fig. 2 is a conceptual cross section showing an anodizing method in the same device. Figure, 3rd
The figure is a cross-sectional view of a main part of the substrate of the same device, and FIGS. 4 and 5 are cross-sectional views of main parts in the manufacturing process of an active substrate constituting a liquid crystal image display device according to a second embodiment of the present invention. Figure 6 is a perspective view showing the mounting means on the liquid crystal panel, Figure 7 is an equivalent circuit diagram of an active type liquid crystal panel, Figure 8 is a cross-sectional view of the main part of the same panel, and Figure 9 is a method for preventing liquid crystal deterioration. FIG. 2 is a cross-sectional view showing passivation on an active substrate in a conventional example. l...Liquid crystal panel, 2...Glass plate, 9...Color filter, 10...Insulated gate transistor, l
l...Scanning line, 12...Signal line, 13...Liquid crystal cell, 14...Picture element electrode, 15...Counter electrode, 16...
...Liquid crystal, 18.Alignment film, 22.Drain wiring, 23.Connection line, 24.Heta pattern, 25.
... Chemical liquid, 26 ... Container, 27 ... DC power supply, 2
8...+ (plus) terminal, 29...- (minus)
Terminal, 30... Electrode plate, 31. 36... Alumina film on signal line, 32. 37... Alumina film on drain wiring, 33... Cutting line, 34... A1 layer, 35...・
・Photosensitive resin butter. 2-°- 5-・- 24-・- no-. Actizu 1 & Flea Den Flea Duck 1tTa Teki embroidery solid pattern rn+tr* Fig. 2-Awatitsu back board j2-・-19 22-m-do-in E 髪Iy-Aluminum bottle 2-7 Kutei 25- fjii ++! Plug board error - Positive terminal - - Finus fan 30 - t ii [ ■ Yu crystal spring 4 - Connection film 9 - Katana foo fielder ++ - m - I2 -... +3 - - - 15 - - JP binding Kate type transistor running 1m l5 No. 9 jl f@t! Le pair pick Is No. 8 Figure 9 4-16-m- +9--- n-・- Picture element 1i Flea rT Gai Electricity Qing Akira Wz Phrases Yen leak Light transmission drain distribution Q? -・-Cufflink number I2-・-fW No. Keyaki

Claims (3)

【特許請求の範囲】[Claims] (1)複数本の走査線と信号線とを有し、単位絵素毎に
絶縁ゲート型トランジスタと絵素電極とを有する第1の
透光性絶縁性基板と、透明導電性の対向電極を有する第
2の透光性絶縁性基板との間に液晶を充填してなる液晶
画像表示装置において、前記信号線がその表面を陽極酸
化されたアルミニウムよりなり、前記液晶とは電気的に
絶縁されている事を特徴とする液晶画像表示装置。
(1) A first light-transmitting insulating substrate having a plurality of scanning lines and signal lines and having an insulated gate transistor and a pixel electrode for each unit pixel, and a transparent conductive counter electrode. In the liquid crystal image display device, the signal line is made of aluminum whose surface is anodized, and is electrically insulated from the liquid crystal. A liquid crystal image display device characterized by:
(2)複数本の走査線と信号線とを有し、単位絵素毎に
絶縁ゲート型トランジスタと絵素電極とを有する第1の
透光性絶縁性基板と、透明導電性の対向電極を有する第
2の透光性絶縁性基板との間に液晶を充填してなる液晶
画像表示装置において、前記信号線と前記絶縁ゲート型
トランジスタのドレイン配線とがアルミニウムよりなり
、前記信号線上と前記絶縁ゲート型トランジスタのドレ
イン配線上とが陽極酸化によって絶縁化されていること
を特徴とする液晶画像表示装置。
(2) A first light-transmitting insulating substrate having a plurality of scanning lines and signal lines and having an insulated gate transistor and a pixel electrode for each unit pixel, and a transparent conductive counter electrode. In the liquid crystal image display device, the signal line and the drain wiring of the insulated gate transistor are made of aluminum, and the signal line and the insulating substrate are made of aluminum. A liquid crystal image display device characterized in that a drain wiring of a gate type transistor is insulated by anodization.
(3)複数本の走査線と信号線とを有し、単位絵素毎に
絶縁ゲート型トランジスタと絵素電極とを有する第1の
透光性絶縁性基板と、透明導電性の対向電極を有する第
2の透光性絶縁性基板との間に液晶を充填してなる液晶
画像表示装置の製造方法において、前記信号線と絶縁ゲ
ート型トランジスタのドレイン配線の形成にあたり、ア
ルミニウムの被着後、前記信号線と絶縁ゲート型トラン
ジスタのドレイン配線の逆パターンの感光性樹脂パター
ンを前記アルミニウムの上に選択的に形成し、アルミニ
ウムの陽極酸化後、前記感光性樹脂パターンとアルミニ
ウムを除去することを特徴とする液晶画像表示装置の製
造方法。
(3) A first light-transmitting insulating substrate having a plurality of scanning lines and signal lines and having an insulated gate transistor and a pixel electrode for each unit pixel, and a transparent conductive counter electrode. In the method for manufacturing a liquid crystal image display device in which a liquid crystal is filled between a second transparent insulating substrate and a second transparent insulating substrate, in forming the signal line and the drain wiring of the insulated gate transistor, after depositing aluminum, A photosensitive resin pattern having a reverse pattern of the signal line and the drain wiring of the insulated gate transistor is selectively formed on the aluminum, and after the aluminum is anodized, the photosensitive resin pattern and the aluminum are removed. A method for manufacturing a liquid crystal image display device.
JP3861289A 1989-02-17 1989-02-17 Liquid crystal image display device and method of manufacturing the same Expired - Fee Related JPH0816758B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3861289A JPH0816758B2 (en) 1989-02-17 1989-02-17 Liquid crystal image display device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3861289A JPH0816758B2 (en) 1989-02-17 1989-02-17 Liquid crystal image display device and method of manufacturing the same

Publications (2)

Publication Number Publication Date
JPH02216129A true JPH02216129A (en) 1990-08-29
JPH0816758B2 JPH0816758B2 (en) 1996-02-21

Family

ID=12530086

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JPH052187A (en) * 1991-01-31 1993-01-08 Semiconductor Energy Lab Co Ltd Liquid crystal electrooptical device
US5879969A (en) * 1991-03-06 1999-03-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
JPH0553148A (en) * 1991-08-23 1993-03-05 Nec Corp Active matrix liquid crystal panel
US5422293A (en) * 1991-12-24 1995-06-06 Casio Computer Co., Ltd. Method for manufacturing a TFT panel
US5917225A (en) * 1992-03-05 1999-06-29 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor having specific dielectric structures
US5418636A (en) * 1992-06-05 1995-05-23 Matsushita Electric Industrial Co., Ltd. Liquid crystal image display apparatus with anodized films of the same thickness and a method of fabricating the same
US5880038A (en) * 1995-03-07 1999-03-09 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US5849604A (en) * 1995-03-13 1998-12-15 Semiconductor Energy Laboratory Co. Method of manufacturing a semiconductor device
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US5861326A (en) * 1995-03-24 1999-01-19 Semiconductor Energy Laboratory Co. Ltd. Method for manufacturing semiconductor integrated circuit
JP2002043578A (en) * 2000-07-25 2002-02-08 Semiconductor Energy Lab Co Ltd Semiconductor device and its manufacturing method
JP2005157017A (en) * 2003-11-27 2005-06-16 Quanta Display Japan Inc Liquid crystal display and manufacturing method therefor
JP4538219B2 (en) * 2003-11-27 2010-09-08 エーユー オプトロニクス コーポレイション Liquid crystal display device and manufacturing method thereof
CN100340915C (en) * 2004-03-29 2007-10-03 广辉电子日本株式会社 Liquid crystal display device and its manufacturing method
CN100353247C (en) * 2004-03-29 2007-12-05 广辉电子日本株式会社 Liquid crystal display device and its manufacturing method
JP2008052154A (en) * 2006-08-28 2008-03-06 Optrex Corp Electronic apparatus and manufacturing method of electronic apparatus

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