JPS63279228A - Liquid crystal display device - Google Patents

Liquid crystal display device

Info

Publication number
JPS63279228A
JPS63279228A JP11258887A JP11258887A JPS63279228A JP S63279228 A JPS63279228 A JP S63279228A JP 11258887 A JP11258887 A JP 11258887A JP 11258887 A JP11258887 A JP 11258887A JP S63279228 A JPS63279228 A JP S63279228A
Authority
JP
Japan
Prior art keywords
electrodes
formed
generated
generation
domain phenomenon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11258887A
Other versions
JP2521752B2 (en
Inventor
Miyuki Mochizuki
Tamahiko Nishiki
Original Assignee
Oki Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Ind Co Ltd filed Critical Oki Electric Ind Co Ltd
Priority to JP11258887A priority Critical patent/JP2521752B2/en
Publication of JPS63279228A publication Critical patent/JPS63279228A/en
Application granted granted Critical
Publication of JP2521752B2 publication Critical patent/JP2521752B2/en
Anticipated expiration legal-status Critical
Application status is Expired - Lifetime legal-status Critical

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136227Through-hole connection of the pixel electrode to the active element through an insulation layer
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F2001/133357Planarisation layer

Abstract

PURPOSE: To prevent the generation of a domain phenomenon by forming an insulating plate having a flat surface on a picture element electrode base and forming picture element electrodes to be connected to a switching element through a contact hole on the surface of the insulating layer.
CONSTITUTION: The insulating layer 57 for flatting a step difference due to the switching element 15 or the like is formed and the picture electrodes 51a, 51b are formed on the surface of the layer 57. Consequently, the generation of a domain phenomenon can be prevented. In addition, the electrodes 51 can be formed up to the upper area of source and gate electrodes 11, 13 by covering the element 15 and the source and gate electrodes 11, 13 with the layer 57. Thereby, an electric separation area is formed between picture element electrodes in which the domain phenomenon may be easily generated and to interrupt the domain phenomenon generated by the curve of lines of electric force by means of the electrode 11. Consequently, the domain phenomenon is not easily generated, and even if it is generated, its generation is not easily observed to improve contrast characteristics and visual field angle characteristics.
COPYRIGHT: (C)1988,JPO&Japio
JP11258887A 1987-05-11 1987-05-11 The liquid crystal display device Expired - Lifetime JP2521752B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11258887A JP2521752B2 (en) 1987-05-11 1987-05-11 The liquid crystal display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11258887A JP2521752B2 (en) 1987-05-11 1987-05-11 The liquid crystal display device

Publications (2)

Publication Number Publication Date
JPS63279228A true JPS63279228A (en) 1988-11-16
JP2521752B2 JP2521752B2 (en) 1996-08-07

Family

ID=14590495

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11258887A Expired - Lifetime JP2521752B2 (en) 1987-05-11 1987-05-11 The liquid crystal display device

Country Status (1)

Country Link
JP (1) JP2521752B2 (en)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6468728A (en) * 1987-09-09 1989-03-14 Casio Computer Co Ltd Thin film transistor
JPS6468726A (en) * 1987-09-09 1989-03-14 Casio Computer Co Ltd Thin film transistor and its manufacture
JPS6468727A (en) * 1987-09-09 1989-03-14 Casio Computer Co Ltd Thin film transistor
EP0554060A2 (en) * 1992-01-31 1993-08-04 Canon Kabushiki Kaisha Liquid crystal display apparatus
US5866919A (en) * 1996-04-16 1999-02-02 Lg Electronics, Inc. TFT array having planarized light shielding element
US5933208A (en) * 1996-04-25 1999-08-03 Lg Electronics, Inc. Liquid crystal display with color filter and light shielding layer forming a substantially planarized surface over the TFT
US5963285A (en) * 1997-11-05 1999-10-05 Lg Electronics Inc. Liquid crystal display with improved electrode adhesion and method for manufacturing same
US6001539A (en) * 1996-04-08 1999-12-14 Lg Electronics, Inc. Method for manufacturing liquid crystal display
US6100954A (en) * 1996-03-26 2000-08-08 Lg Electronics Inc. Liquid crystal display with planarizing organic gate insulator and organic planarization layer and method for manufacturing
US6188452B1 (en) 1996-07-09 2001-02-13 Lg Electronics, Inc Active matrix liquid crystal display and method of manufacturing same
US6211928B1 (en) 1996-03-26 2001-04-03 Lg Electronics Inc. Liquid crystal display and method for manufacturing the same
US6372534B1 (en) 1995-06-06 2002-04-16 Lg. Philips Lcd Co., Ltd Method of making a TFT array with photo-imageable insulating layer over address lines
US6614493B1 (en) 1996-11-27 2003-09-02 Lg. Philips Lcd Co., Ltd. Liquid crystal display and method of manufacturing the same
US6797982B2 (en) 2000-08-28 2004-09-28 Sharp Kabushiki Kaisha Active matrix substrate and display device
JP2006100760A (en) * 2004-09-02 2006-04-13 Casio Comput Co Ltd Thin-film transistor and its manufacturing method
US7095478B2 (en) 1996-04-12 2006-08-22 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for fabricating thereof
US7479939B1 (en) 1991-02-16 2009-01-20 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US8012782B2 (en) 1995-03-18 2011-09-06 Semiconductor Energy Laboratory Co., Ltd. Method for producing display device

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5372647A (en) * 1976-12-09 1978-06-28 Hughes Aircraft Co Surface smoothing liquid crystal matrix device
US4239346A (en) * 1979-05-23 1980-12-16 Hughes Aircraft Company Compact liquid crystal display system
JPS5730881A (en) * 1980-07-31 1982-02-19 Suwa Seikosha Kk Active matrix substrate
JPS60140091U (en) * 1985-01-17 1985-09-17
JPS60207116A (en) * 1984-03-31 1985-10-18 Toshiba Corp Display electrode array
JPS60257171A (en) * 1984-06-01 1985-12-18 Hitachi Ltd Manufacture of thin-film semiconductor element
JPS62223727A (en) * 1986-03-25 1987-10-01 Seiko Epson Corp Liquid crystal panel
JPS62240936A (en) * 1986-04-14 1987-10-21 Seiko Epson Corp Projection type display device

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5372647A (en) * 1976-12-09 1978-06-28 Hughes Aircraft Co Surface smoothing liquid crystal matrix device
US4239346A (en) * 1979-05-23 1980-12-16 Hughes Aircraft Company Compact liquid crystal display system
JPS5730881A (en) * 1980-07-31 1982-02-19 Suwa Seikosha Kk Active matrix substrate
JPS60207116A (en) * 1984-03-31 1985-10-18 Toshiba Corp Display electrode array
JPS60257171A (en) * 1984-06-01 1985-12-18 Hitachi Ltd Manufacture of thin-film semiconductor element
JPS60140091U (en) * 1985-01-17 1985-09-17
JPS62223727A (en) * 1986-03-25 1987-10-01 Seiko Epson Corp Liquid crystal panel
JPS62240936A (en) * 1986-04-14 1987-10-21 Seiko Epson Corp Projection type display device

Cited By (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6468726A (en) * 1987-09-09 1989-03-14 Casio Computer Co Ltd Thin film transistor and its manufacture
JPS6468727A (en) * 1987-09-09 1989-03-14 Casio Computer Co Ltd Thin film transistor
JPS6468728A (en) * 1987-09-09 1989-03-14 Casio Computer Co Ltd Thin film transistor
US7479939B1 (en) 1991-02-16 2009-01-20 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
EP0554060A2 (en) * 1992-01-31 1993-08-04 Canon Kabushiki Kaisha Liquid crystal display apparatus
US8012782B2 (en) 1995-03-18 2011-09-06 Semiconductor Energy Laboratory Co., Ltd. Method for producing display device
US7531838B2 (en) 1995-06-06 2009-05-12 Lg Display Co., Ltd. LCD with increased pixel opening sizes
US6870188B2 (en) 1995-06-06 2005-03-22 Lg. Philips Lcd Co., Ltd. LCD with increased pixel opening sizes
US7745830B2 (en) 1995-06-06 2010-06-29 Lg Display Co., Ltd. LCD with increased pixel opening sizes
US6515300B2 (en) 1995-06-06 2003-02-04 Lg. Philips Lcd Co., Ltd Method of making a TFT array with photo-imageable insulating layer over address lines
US6507045B2 (en) 1995-06-06 2003-01-14 Lg Philips Lcd Co., Ltd. LCD with increased pixel opening sizes
US6376270B1 (en) 1995-06-06 2002-04-23 Lg. Philips Lcd Co., Ltd. Method of making an array of TFTs having an insulation layer with a low dielectric constant
US6372534B1 (en) 1995-06-06 2002-04-16 Lg. Philips Lcd Co., Ltd Method of making a TFT array with photo-imageable insulating layer over address lines
US7445948B2 (en) 1995-06-06 2008-11-04 Lg. Display Co., Ltd. Method of making a TFT array with photo-imageable insulating layer over address lines
US6211928B1 (en) 1996-03-26 2001-04-03 Lg Electronics Inc. Liquid crystal display and method for manufacturing the same
US6100954A (en) * 1996-03-26 2000-08-08 Lg Electronics Inc. Liquid crystal display with planarizing organic gate insulator and organic planarization layer and method for manufacturing
US6001539A (en) * 1996-04-08 1999-12-14 Lg Electronics, Inc. Method for manufacturing liquid crystal display
US7095478B2 (en) 1996-04-12 2006-08-22 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for fabricating thereof
US7636136B2 (en) 1996-04-12 2009-12-22 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for fabricating thereof
US7196749B2 (en) 1996-04-12 2007-03-27 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for fabricating thereof
US5926702A (en) * 1996-04-16 1999-07-20 Lg Electronics, Inc. Method of fabricating TFT array substrate
US5866919A (en) * 1996-04-16 1999-02-02 Lg Electronics, Inc. TFT array having planarized light shielding element
US5933208A (en) * 1996-04-25 1999-08-03 Lg Electronics, Inc. Liquid crystal display with color filter and light shielding layer forming a substantially planarized surface over the TFT
US6188452B1 (en) 1996-07-09 2001-02-13 Lg Electronics, Inc Active matrix liquid crystal display and method of manufacturing same
US6614493B1 (en) 1996-11-27 2003-09-02 Lg. Philips Lcd Co., Ltd. Liquid crystal display and method of manufacturing the same
US5963285A (en) * 1997-11-05 1999-10-05 Lg Electronics Inc. Liquid crystal display with improved electrode adhesion and method for manufacturing same
US7126157B2 (en) 2000-08-28 2006-10-24 Sharp Kabushiki Kaisha Active matrix substrate, method of making the substrate, and display device
US7696516B2 (en) 2000-08-28 2010-04-13 Sharp Kabushiki Kaisha Active matrix substrate, method of making the substrate, and display device
US6797982B2 (en) 2000-08-28 2004-09-28 Sharp Kabushiki Kaisha Active matrix substrate and display device
US7829391B2 (en) 2000-08-28 2010-11-09 Sharp Kabushiki Kaisha Active matrix substrate, method of making the substrate, and display device
US7459723B2 (en) 2000-08-28 2008-12-02 Sharp Kabushiki Kaisha Active matrix substrate, method of making the substrate, and display device
US8304297B2 (en) 2000-08-28 2012-11-06 Sharp Kabushiki Kaisha Active matrix substrate, method of making the substrate, and display device
JP2006100760A (en) * 2004-09-02 2006-04-13 Casio Comput Co Ltd Thin-film transistor and its manufacturing method

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Publication number Publication date
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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term