JPH031648B2 - - Google Patents
Info
- Publication number
- JPH031648B2 JPH031648B2 JP57112484A JP11248482A JPH031648B2 JP H031648 B2 JPH031648 B2 JP H031648B2 JP 57112484 A JP57112484 A JP 57112484A JP 11248482 A JP11248482 A JP 11248482A JP H031648 B2 JPH031648 B2 JP H031648B2
- Authority
- JP
- Japan
- Prior art keywords
- display device
- liquid crystal
- conductive film
- transistor
- image display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004973 liquid crystal related substance Substances 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 15
- 239000003990 capacitor Substances 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 description 11
- 239000010410 layer Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 229910006404 SnO 2 Inorganic materials 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229920006254 polymer film Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000004986 Cholesteric liquid crystals (ChLC) Substances 0.000 description 1
- 206010052128 Glare Diseases 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- -1 etc. or In 2 O 3 Inorganic materials 0.000 description 1
- 230000004313 glare Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 150000004757 linear silanes Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
Landscapes
- Physics & Mathematics (AREA)
- Liquid Crystal (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Liquid Crystal Display Device Control (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
【発明の詳細な説明】
本発明は、同一基板上に形成したトランジスタ
をスイツチング素子として液晶を駆動する画像表
示装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an image display device that drives liquid crystal using transistors formed on the same substrate as switching elements.
液晶による画像表示装置の駆動回路の構成は、
同一基板上に互いに直交するゲート電極群とソー
ス電極群を配列したトランジスタアレイより成
り、一画素の構成は第１図に示すようにトランジ
スタ１、表示電位記憶容量２、液晶表示画素駆動
電極３、一画素分の液晶４（液晶表示画素）、ゲ
ート電極５、ソース電極６より成る。 The configuration of the drive circuit for a liquid crystal image display device is as follows:
It consists of a transistor array in which a group of gate electrodes and a group of source electrodes are arranged perpendicularly to each other on the same substrate, and the configuration of one pixel, as shown in FIG. 1, includes a transistor 1, a display potential storage capacitor 2, a liquid crystal display pixel drive electrode 3, It consists of a liquid crystal 4 for one pixel (liquid crystal display pixel), a gate electrode 5, and a source electrode 6.
画像の表示は必要な画素へ、ゲート信号、ソー
ス信号を加えることにより液晶駆動電極に適当な
電位を与え液晶分子の配列を制御し電気光学的な
変調を与えることで画像を表示する。 Images are displayed by applying gate signals and source signals to required pixels, applying appropriate potential to liquid crystal drive electrodes, controlling the alignment of liquid crystal molecules, and applying electro-optical modulation.
液晶は、短期間にトランジスタから表示電位記
憶容量に電荷を蓄積し、長期間にわたつて保持す
る電位によつて駆動されるために、トランジスタ
のオフ時の液晶及びトランジスタの抵抗による電
荷の放電による電位低下を防ぐために充分大きな
表示電位記憶容量を必要とする。 Since the liquid crystal is driven by the potential that accumulates charge from the transistor in the display potential storage capacitor for a short period of time and holds it for a long period of time, the charge is discharged by the liquid crystal and the resistance of the transistor when the transistor is off. A sufficiently large display potential storage capacity is required to prevent potential drop.
従来の画像表示装置の一画素の構成の平面図を
第２図に、第２図Ａ−A′間の断面構造を第３図
に示す。第３図において第２図と対応する構成に
は同一符号をつけて表わしている。 FIG. 2 shows a plan view of the configuration of one pixel of a conventional image display device, and FIG. 3 shows a cross-sectional structure taken along line A-A' in FIG. In FIG. 3, components corresponding to those in FIG. 2 are denoted by the same reference numerals.
７はAl，Cr，Mo等の金属膜等の導電膜による
ゲート電極、８は金属若しくはIn2O3，SnO2等の
透明導電膜で表示電位記憶容量の片側電極、１４
はSiO2，Si3N4等のゲート絶縁膜、９は非晶質シ
リコン、多結晶シリコン、レーザーアニールされ
たシリコン、CdSe等の半導体、１０はAl，Ni等
によるソース電極、１１はドレイン電極、１３は
In2O3，SnO2等の液晶表示画素駆動電極、１５は
１１，１３間のSiO2，Si3N4等による層間絶縁膜
で、この絶縁膜の除去された部分１２で１１と１
３とのコンタクトがなされている。１６はポリイ
ミド等のポリマー膜等の液晶の配向処理層、２０
はガラス、セラミツクス等の基板である。この２
０に対向する基板２１には、In2O3，SnO2等の液
晶駆動電極１７とポリマー膜等の液晶の配向処理
層１８が形成される。二枚の基板間に挟持される
１９は液晶である。勿論配向処理層１６、は
SiO2，Si3N4等の絶縁膜上にポリマー膜等の積層
された構造でもよい。 7 is a gate electrode made of a conductive film such as a metal film such as Al, Cr, Mo, etc.; 8 is a one-sided electrode of a display potential storage capacitor made of metal or a transparent conductive film such as In 2 O 3 or SnO 2 ; 14
is a gate insulating film such as SiO 2 or Si 3 N 4 , 9 is a semiconductor such as amorphous silicon, polycrystalline silicon, laser annealed silicon, or CdSe, 10 is a source electrode made of Al, Ni, etc., and 11 is a drain electrode. , 13 is
A liquid crystal display pixel drive electrode made of In 2 O 3 , SnO 2 , etc., 15 is an interlayer insulating film made of SiO 2 , Si 3 N 4 , etc. between 11 and 13, and the part 12 where this insulating film is removed connects 11 and 1.
Contact has been made with 3. 16 is a liquid crystal alignment treatment layer such as a polymer film such as polyimide; 20
is a substrate made of glass, ceramics, etc. This 2
A liquid crystal driving electrode 17 made of In 2 O 3 , SnO 2 or the like and a liquid crystal alignment layer 18 made of a polymer film or the like are formed on the substrate 21 facing the substrate 21 . Reference numeral 19 sandwiched between two substrates is a liquid crystal. Of course, the orientation treatment layer 16 is
A structure in which a polymer film or the like is laminated on an insulating film such as SiO 2 or Si 3 N 4 may be used.
この従来の画像表示装置においては、表示電位
記憶容量が液晶表示画素駆動電極部分に形成され
ているため、一様な広い表示面積が得にくいこと
と、透過型表示装置においてはこの部分で透明導
電膜が三層、即ち８，１３，１７の三層になり、
二層の部分に比して光の透過率が低く、表示性能
上好ましくない性質を有していた。 In this conventional image display device, since the display potential storage capacitor is formed in the liquid crystal display pixel drive electrode portion, it is difficult to obtain a uniform wide display area, and in a transmissive display device, a transparent conductive capacitor is formed in this portion. The membrane has three layers, namely 8, 13, and 17,
The light transmittance was lower than that of the two-layered portion, which had unfavorable properties in terms of display performance.
本発明の目的は上記表示性能を向上させること
にあり、表示電位記憶容量をトランジスタ部分に
形成することにより、一様な広い表示面積を得、
透過型表示装置においては透明導電膜を二層する
ことによつて一様な高い光の透過率を得ることに
ある。 The purpose of the present invention is to improve the above-mentioned display performance, and by forming a display potential storage capacitor in the transistor portion, a uniform wide display area can be obtained.
In a transmission type display device, a uniform and high light transmittance can be obtained by forming two layers of transparent conductive films.
その目的を達成する本発明は、同一基板上に形
成した複数のトランジスタ素子によつて駆動され
る液晶を用いて表示を行なう画像表示装置におい
て、液晶表示画素の表示電位記憶容量を絶縁膜を
介してトランジスタ上に配置し形成することを要
旨とする。 The present invention achieves this object by increasing the display potential storage capacity of a liquid crystal display pixel through an insulating film in an image display device that performs display using a liquid crystal driven by a plurality of transistor elements formed on the same substrate. The gist is to arrange and form the transistor over the transistor.
本発明の画像表示装置の実施例における一画素
の構成の平面図を第４図、第４Ｂ−B′間の断面
構造を第５図に示す。第４図においては第２図
と、第５図においては第３図と、また第４図およ
び第５図の対応する構成には同一符号をつけて表
わしている。第３図で８−１４、１５−１３によ
つて構成される表示電位記憶容量は第５図ではト
ランジスタ上に絶縁膜２３を介して、絶縁膜２４
を挟持する第１の導電膜２２および第２の導電膜
１３によつて構成され、第２の導電膜は液晶表示
画素駆動電極を兼ねている。 FIG. 4 is a plan view of the configuration of one pixel in an embodiment of the image display device of the present invention, and FIG. 5 is a cross-sectional structure taken along line 4B-B'. In FIG. 4, corresponding structures are indicated by the same reference numerals as in FIG. 2, and in FIG. 5 by FIG. 3, and corresponding structures in FIGS. In FIG. 5, the display potential storage capacity constituted by 8-14 and 15-13 in FIG.
It is composed of a first conductive film 22 and a second conductive film 13 sandwiching the same, and the second conductive film also serves as a liquid crystal display pixel drive electrode.
導電膜２２はAl，Cr，Mo，Ni等の金属若し
くはIn2O3，SnO2等で形成され、絶縁膜２３，２
４はSiO2，Si3N4等で形成される。２５は２３，
２４の絶縁膜の除去された部分で１と１３とのコ
ンタクトがなされる。 The conductive film 22 is formed of metal such as Al, Cr, Mo, Ni, etc. or In 2 O 3 , SnO 2 etc., and the insulating films 23, 2
4 is formed of SiO 2 , Si 3 N 4 or the like. 25 is 23,
Contact between 1 and 13 is made at the portion where the insulating film 24 is removed.
表示電位記憶容量が、トランジスタ上に形成さ
れたことによつて、液晶表示画素駆動電極部分の
構成が簡素になり、広い表示面積が得られ、第２
の導電膜１３を透明導電膜とすることによつて、
一様な高い光の透過率を有する透過型表示装置を
得ることができる。 Since the display potential storage capacitor is formed on the transistor, the configuration of the liquid crystal display pixel drive electrode portion is simplified, a wide display area is obtained, and the second
By making the conductive film 13 a transparent conductive film,
A transmissive display device having uniform high light transmittance can be obtained.
この実施例は、半導体がゲート上に形成される
倒置型構造であるため、半導体９をゲート電極７
および表示電位記憶容量の片側電極２２の内側に
配置しかつ７，２２を金属膜で形成することによ
つて半導体部分への遮光を行い、トランジスタの
オフ時での光によるリーク電流をおさえ、高品質
な画像表示を行なえる付随効果がある。また、２
２は７と同様にして基板の端部までストライプ状
に引き出した電極である。この外部端子（液晶表
示画素周辺の接続端子）の構成を平面図は第６図
Ｃ−Ｃ間の断面構造を第７図に示す。２２は絶縁
膜１４，２３を介してゲート電極７上に形成され
ているため、第１図に示されるV1すなわち第１
の導電膜２２の電位は外部で任意に設定できる。
液晶駆動電極の電位Vcと同電位にできるほか、
外部端子の構成の平面図第８図のように、近傍の
ゲート電極と接続することによつて、V1は近傍
のゲート電極電位と同電位にできる。第９図は第
８図Ｄ−D′間の断面構造を示しており、第６図
乃至第９図においては第５図と対応する構成に同
一符号をつけて表わしている。この構造にしたこ
とによつて、電極７と２２を外部において２６の
如く導電性テープ若しくは剥離可能な導電性ペー
スト等で接続すれば７と２２の間の絶縁膜が電気
的に保護されるために、静電破壊を生じることな
く液晶の配向処理をラビング法を行なうことがで
きる。 Since this embodiment has an inverted structure in which the semiconductor is formed on the gate, the semiconductor 9 is connected to the gate electrode 7.
By placing 7 and 22 inside the electrode 22 on one side of the display potential storage capacitor and forming them with a metal film, the semiconductor portion is shielded from light, suppressing leakage current due to light when the transistor is off, and increasing the This has the additional effect of displaying high-quality images. Also, 2
Reference numeral 2 denotes an electrode drawn out in a striped manner to the edge of the substrate in the same manner as 7. A plan view of the structure of this external terminal (connection terminal around the liquid crystal display pixel) is shown in FIG. 7, which shows a cross-sectional structure taken along line C--C in FIG. 22 is formed on the gate electrode 7 via the insulating films 14 and 23, so that V 1 shown in FIG.
The potential of the conductive film 22 can be arbitrarily set externally.
In addition to being able to have the same potential as the potential Vc of the liquid crystal drive electrode,
As shown in FIG. 8, a plan view of the structure of the external terminal, by connecting it to a nearby gate electrode, V 1 can be made to have the same potential as the nearby gate electrode potential. FIG. 9 shows a cross-sectional structure taken along line D-D' in FIG. 8, and in FIGS. 6 to 9, structures corresponding to those in FIG. 5 are denoted by the same reference numerals. With this structure, if the electrodes 7 and 22 are connected externally with conductive tape or peelable conductive paste as shown in 26, the insulating film between 7 and 22 can be electrically protected. Furthermore, the rubbing method can be used to align the liquid crystal without causing electrostatic damage.
ところで反射型表示装置においては１３は金属
膜等でよく、上記幾つかの利点を有するものであ
る。 Incidentally, in a reflective display device, 13 may be a metal film or the like, which has the above-mentioned several advantages.
第４図、第５図に示される実施例の変形とし
て、トランジスタ素子に接続される表示電位記憶
容量を絶縁膜を介して隣接するトランジスタ上に
配置した実施例における一画素近傍の構成の平面
図を第１０図に、第１０図Ｅ−E′間の断面構造を
第１１図に示す。第１０図、第１１図は第４図、
第５図と対応する構成に同一符号をつけて表わし
ている。異なる点はＦ領域の液晶表示画素駆動電
極が隣接するF′領域のトランジスタ上までのびて
おり、導電膜２２と絶縁膜２４を挟持することに
よつて表示電位記憶容量をトランジスタ上に絶縁
膜２３を介して配置し形成していることである。 As a modification of the embodiment shown in FIGS. 4 and 5, a plan view of the configuration near one pixel in an embodiment in which a display potential storage capacitor connected to a transistor element is placed on an adjacent transistor via an insulating film. is shown in FIG. 10, and the cross-sectional structure taken along line E-E' in FIG. 10 is shown in FIG. 11. Figures 10 and 11 are Figure 4,
Components corresponding to those in FIG. 5 are denoted by the same reference numerals. The difference is that the liquid crystal display pixel drive electrode in the F region extends over the transistor in the adjacent F' region, and by sandwiching the conductive film 22 and the insulating film 24, the display potential storage capacity is increased by placing the insulating film 23 on the transistor. It is arranged and formed through the
この実施例においても前記実施例と同様に本発
明の目的を達成し、幾つかの付随効果を同様に有
するものである。とりわけ外部端子の構成を平面
図第１２図、第１２図Ｇ−G′間の断面構造図第
１３図の如くして、同一トランジスタにおけるゲ
ート電極７と表示電位記憶容量の片側電極２２を
接続することによつて、トランジスタを二重ゲー
ト構造にし、また絶縁膜２３をゲート絶縁膜１４
と同程度の厚さにしてコンダクタンスを上げるこ
とができる。 This embodiment also achieves the object of the present invention in the same way as the previous embodiment, and similarly has some accompanying effects. In particular, the configuration of the external terminals is shown in FIG. 12, which is a plan view, and FIG. 13, which is a cross-sectional structural diagram taken along line G-G' in FIG. In particular, the transistor has a double gate structure, and the insulating film 23 is replaced by the gate insulating film 14.
It is possible to increase the conductance by making the thickness similar to that of .
上記二つの実施例は倒置型構造のトランジスタ
によるものであつたが、正置型構造のトランジス
タによる実施例として一画素近傍の構成の平面図
を第１４図に、第１４図Ｈ−H′間の断面構造を
第１５図に示す。第１５図の第３図との相違は半
導体層９上にゲート絶縁膜１４を介してゲート電
極７が構成されていることであり、ソース・ドレ
イン電極１０，１１もゲート電極下にある。表示
電位記憶容量は、前記実施例第１０図、第１１図
と同様にＦ領域の液晶表示画素駆動電極１３が隣
接するF′領域のトランジスタ上までのびることに
より、トランジスタを形成するゲート電極７と１
３に挟持される絶縁膜２７から構成されている。
１３は透過型表示装置では透明導電膜で、反射型
表示装置では透明導電膜の他、金属膜等でよい。
本実施例では構造上V1の電位は隣接ゲート電位
となつている。 The above two embodiments were based on a transistor with an inverted structure, but as an example using a transistor with an upright structure, a plan view of the configuration near one pixel is shown in FIG. The cross-sectional structure is shown in FIG. The difference between FIG. 15 and FIG. 3 is that a gate electrode 7 is formed on a semiconductor layer 9 with a gate insulating film 14 interposed therebetween, and source/drain electrodes 10 and 11 are also located below the gate electrode. The display potential storage capacity is increased by extending the liquid crystal display pixel drive electrode 13 in the F region to the top of the adjacent transistor in the F′ region, as in the case of FIGS. 1
It is composed of an insulating film 27 sandwiched between two parts.
Reference numeral 13 is a transparent conductive film in a transmissive display device, and may be a metal film in addition to a transparent conductive film in a reflective display device.
In this embodiment, the potential of V 1 is structurally the potential of the adjacent gate.
なお第１４図は第２図および第１０図と、第１
５図は第３図および第１１図と対応する構成は同
一の符号をつけて表わしている。 Note that Figure 14 is a combination of Figures 2 and 10, and Figure 1.
In FIG. 5, components corresponding to those in FIGS. 3 and 11 are denoted by the same reference numerals.
またこの実施例は第１１図で述べたように二重
ゲート構造にすることができる。二重ゲート構造
による実施例における一画素近傍の構成の平面図
を第１６図に、第１６図Ｉ−I′間の断面構造を第
１７図に示す。第１６図、第１７図は第１４図、
第１５図と対応する構成に同一符号をつけて表わ
している。異なる点は半導体９の下に絶縁膜２９
を介してゲート電極２８を形成していることであ
り、２８を７、例えば第１２図、第１３図におけ
る２２と７の如く接続して二重ゲート構造にして
いることである。この二重ゲート構造の利点はト
ランジスタのコンダクタンスの向上、半導体の遮
光、二重ゲート電極間の構成要素の電気的な保護
等である。 Also, this embodiment can be made into a double gate structure as described in FIG. FIG. 16 shows a plan view of the configuration near one pixel in an embodiment with a double gate structure, and FIG. 17 shows a cross-sectional structure taken along line I-I' in FIG. 16. Figures 16 and 17 are Figure 14,
Components corresponding to those in FIG. 15 are denoted by the same reference numerals. The difference is that there is an insulating film 29 under the semiconductor 9.
The gate electrode 28 is formed through the gate electrode 28, and the gate electrode 28 is connected to 7, for example, 22 and 7 in FIGS. 12 and 13 to form a double gate structure. The advantages of this double gate structure include improving the conductance of the transistor, shielding the semiconductor from light, and electrically protecting components between the double gate electrodes.
この実施例において２９を適当な厚さにし、２
８をゲート電極と直接接続せず、所望の時のみ第
７図のように接続して２８と７の間の電気的な保
護および半導体の遮光を行なうように変形するこ
ともできる。 In this example, 29 is made to have an appropriate thickness, and 2
It is also possible to modify the structure so that 8 is not directly connected to the gate electrode, but is connected only when desired as shown in FIG. 7, thereby providing electrical protection between 28 and 7 and shielding the semiconductor from light.
以上幾つかの実施例に基づいて本発明を説明し
てきたが、本発明は液晶による画像表示装置にお
いて、液晶表示画素の表示電位記憶容量を絶縁膜
を介してトランジスタ上に配置し形成することを
要旨としているため、トランジスタの形状等に何
ら規制されるものでなく、またトランジスタの形
成される基板にしてもガラス等の絶縁性基板のほ
か、アルミナ等のセラミツクス基板、あるいはシ
リコン等の半導体基板、能動素子部を絶縁膜、半
導体膜を介して形成される金属基板等も使用する
ことができる。 Although the present invention has been described above based on several embodiments, the present invention is a liquid crystal image display device in which the display potential storage capacitance of a liquid crystal display pixel is formed by disposing it on a transistor via an insulating film. Since this is a summary, there are no restrictions on the shape of the transistor, and the substrate on which the transistor is formed may be an insulating substrate such as glass, a ceramic substrate such as alumina, a semiconductor substrate such as silicon, etc. A metal substrate formed with an insulating film or a semiconductor film interposed therebetween for the active element portion can also be used.
本発明の画像表示装置によつて、透過型、反射
型いずれにも、広く一様に平担な表示画素が得ら
れ、高品質な画像表示装置が達成される。 With the image display device of the present invention, wide and uniform display pixels can be obtained in both transmission type and reflection type, and a high quality image display device can be achieved.
なお、この外半導体部分に悪影響をおよぼさな
い範囲内で導電膜として一部に有機導電膜を用い
る、絶縁膜の一部をポリイミド等の有機絶縁膜と
することも可能である。 Note that it is also possible to use an organic conductive film as a part of the conductive film, or to make a part of the insulating film an organic insulating film such as polyimide, within a range that does not adversely affect the external semiconductor portion.
又、液晶自体及び液晶の配向処理層については
詳しく述べなかつたが、公知の種々のものが使用
でき、ネマチツク液晶、それにコレステリツク液
晶、光学活性物質、２色性色素、その他各種添加
剤等を必要に応じて添加したもの等が使用でき、
配向処理層もポリイミド、シリコン系ラダーポリ
マー等の有機樹脂をはじめSiO2等の無機質、直
鎖シラン系カツプリング剤等の垂直配向剤等種々
のものが使用できる。 Although we have not discussed the liquid crystal itself and the liquid crystal orientation treatment layer in detail, various known materials can be used, including nematic liquid crystal, cholesteric liquid crystal, optically active substances, dichroic dyes, and various other additives. You can use those added according to the
Various materials can be used for the alignment layer, including organic resins such as polyimide and silicon ladder polymers, inorganic materials such as SiO 2 , and vertical alignment agents such as linear silane coupling agents.
さらに液晶層を２層に形成する、カラーフイル
ター・偏光板を積層する、文字、図形、枠等を印
刷する、ノングレア処理する、光源を設ける等公
知の液晶表示装置の応用が適用しうる。 Furthermore, applications of known liquid crystal display devices may be applied, such as forming a two-layer liquid crystal layer, laminating color filters and polarizing plates, printing characters, figures, frames, etc., applying non-glare treatment, and providing a light source.
第１図は画像表示装置の一画素の構成図、第２
図は従来の画像表示装置の一画素の構成の平面
図、第３図は第２図の部分断面構造図、第４図は
本発明の画像表示装置の一画素の構成の平面図、
第５図は第４図の部分断面構造図、第６図は本発
明の画像表示装置の外部端子の構成の平面図、第
７図は第６図の部分断面構造図、第８図は本発明
の画像表示装置の外部端子の構成の平面図、第９
図は第８図の部分断面構造図、第１０図は本発明
の画像表示装置の一画素の構成の平面図、第１１
図は第１０図の部分断面構造図、第１２図は本発
明の画像表示装置の外部端子の構成の平面図、第
１３図は第１２図の部分断面構造図、第１４図は
本発明の画像表示装置の一画素の構成の平面図、
第１５図は第１４図の部分断面構造図、第１６図
は本発明の画像表示装置の一画素の構成の平面
図、第１７図は第１６図の部分断面構造図であ
る。
７……ゲート電極、１３……液晶表示画素駆動
電極、２２……表示電位記憶容量の片側の電極、
２４，２７……表示電位記憶容量を構成する絶縁
膜。
Figure 1 is a configuration diagram of one pixel of an image display device;
The figure is a plan view of the configuration of one pixel of a conventional image display device, FIG. 3 is a partial cross-sectional structural diagram of FIG. 2, and FIG. 4 is a plan view of the configuration of one pixel of the image display device of the present invention.
5 is a partial sectional structural diagram of FIG. 4, FIG. 6 is a plan view of the configuration of external terminals of the image display device of the present invention, FIG. 7 is a partial sectional structural diagram of FIG. 6, and FIG. Plan view of the configuration of external terminals of the image display device of the invention, No. 9
The figure is a partial cross-sectional structural view of FIG. 8, FIG. 10 is a plan view of the configuration of one pixel of the image display device of the present invention, and FIG.
The figures are a partial cross-sectional structural diagram of FIG. 10, FIG. 12 is a plan view of the configuration of external terminals of the image display device of the present invention, FIG. 13 is a partial cross-sectional structural diagram of FIG. 12, and FIG. A plan view of the configuration of one pixel of the image display device,
15 is a partial sectional structural diagram of FIG. 14, FIG. 16 is a plan view of the configuration of one pixel of the image display device of the present invention, and FIG. 17 is a partial sectional structural diagram of FIG. 16. 7... Gate electrode, 13... Liquid crystal display pixel drive electrode, 22... One side electrode of display potential storage capacitor,
24, 27...Insulating films constituting the display potential storage capacity.
Claims (1)
子によつて駆動される液晶を用いて表示を行なう
画像表示装置において、液晶表示画素の表示電位
記憶容量を絶縁膜を介してトランジスタ上に配置
し形成することを特徴とする画像表示装置。 ２ 表示電位記憶容量は、絶縁膜を挟持する第１
及び第２の導電膜により構成し、第１の導電膜は
絶縁膜を介してトランジスタ上に配置され基板の
端部にストライプ状に引き出した電極とし、第２
の導電膜は液晶表示画素駆動電極を兼ねることを
特徴とする特許請求範囲第１項記載の画像表示装
置。 ３ 表示電位記憶容量は、トランジスタを形成す
るゲート電極と導電膜間に挟持される絶縁膜によ
り構成し、導電膜は液晶表示画素駆動電極を兼ね
ることを特徴とする特許請求範囲第１項記載の画
像表示装置。 ４ 表示電位記憶容量を形成する第２の導電膜が
透明導電膜により形成されることを特徴とする特
許請求範囲第２項記載の画像表示装置。 ５ 表示電位記憶容量を形成する導電膜が透明導
電膜により形成されることを特徴とする特許請求
範囲第３項記載の画像表示装置。 ６ トランジスタ素子に接続される表示電位記憶
容量を絶縁膜を介して隣接するトランジスタ上に
配置することを特徴とする特許請求範囲第１項乃
至第５項のいずれか一項記載の画像表示装置。[Scope of Claims] 1. In an image display device that performs display using a liquid crystal driven by a plurality of transistor elements formed on the same substrate, the display potential storage capacity of a liquid crystal display pixel is connected to a transistor via an insulating film. An image display device characterized in that the image display device is arranged and formed on the top. 2 The display potential storage capacity is the first
and a second conductive film, the first conductive film is an electrode disposed on the transistor through an insulating film and drawn out in a stripe shape at the edge of the substrate, and the second
2. The image display device according to claim 1, wherein the conductive film also serves as a liquid crystal display pixel drive electrode. 3. The display potential storage capacitor is constituted by an insulating film sandwiched between a gate electrode forming a transistor and a conductive film, and the conductive film also serves as a liquid crystal display pixel drive electrode. Image display device. 4. The image display device according to claim 2, wherein the second conductive film forming the display potential storage capacity is formed of a transparent conductive film. 5. The image display device according to claim 3, wherein the conductive film forming the display potential storage capacity is formed of a transparent conductive film. 6. The image display device according to any one of claims 1 to 5, characterized in that a display potential storage capacitor connected to a transistor element is arranged on an adjacent transistor with an insulating film interposed therebetween.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57112484A JPS595229A (en) | 1982-07-01 | 1982-07-01 | Image display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57112484A JPS595229A (en) | 1982-07-01 | 1982-07-01 | Image display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS595229A JPS595229A (en) | 1984-01-12 |
| JPH031648B2 true JPH031648B2 (en) | 1991-01-11 |
Family
ID=14587792
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57112484A Granted JPS595229A (en) | 1982-07-01 | 1982-07-01 | Image display device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS595229A (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6045219A (en) * | 1983-08-23 | 1985-03-11 | Toshiba Corp | Active matrix type display device |
| JPS6064379A (en) * | 1983-09-20 | 1985-04-12 | セイコーインスツルメンツ株式会社 | Liquid crystal display |
| JPS60192370A (en) * | 1984-03-13 | 1985-09-30 | Seiko Instr & Electronics Ltd | Thin film transistor array |
| JPH0646277B2 (en) * | 1984-04-27 | 1994-06-15 | セイコー電子工業株式会社 | Liquid crystal display with built-in storage capacity |
| JPS61185725A (en) * | 1985-02-13 | 1986-08-19 | Nec Corp | Liquid crystal display device of projection type |
| JPH07111519B2 (en) * | 1987-02-19 | 1995-11-29 | 富士通株式会社 | Thin film transistor matrix |
| JPS6424232A (en) * | 1987-07-20 | 1989-01-26 | Fujitsu Ltd | Thin film transistor matrix |
| JPH07111521B2 (en) * | 1987-09-11 | 1995-11-29 | 富士通株式会社 | Active matrix liquid crystal display device |
| US5162901A (en) * | 1989-05-26 | 1992-11-10 | Sharp Kabushiki Kaisha | Active-matrix display device with added capacitance electrode wire and secondary wire connected thereto |
| JPH04280226A (en) * | 1991-03-08 | 1992-10-06 | Nec Corp | Thin film transistor element array and driving method thereof |
| JP3723336B2 (en) * | 1997-11-18 | 2005-12-07 | 三洋電機株式会社 | Liquid crystal display device |
| US6834686B2 (en) | 2002-09-09 | 2004-12-28 | Delaware Capital Formation, Inc. | Tank pressure management system |
| JP6662665B2 (en) * | 2015-03-19 | 2020-03-11 | 株式会社半導体エネルギー研究所 | Liquid crystal display device and electronic equipment using the liquid crystal display device |
-
1982
- 1982-07-01 JP JP57112484A patent/JPS595229A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS595229A (en) | 1984-01-12 |
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