JPH02240637A - Liquid crystal image display device and production thereof - Google Patents
Liquid crystal image display device and production thereofInfo
- Publication number
- JPH02240637A JPH02240637A JP1062459A JP6245989A JPH02240637A JP H02240637 A JPH02240637 A JP H02240637A JP 1062459 A JP1062459 A JP 1062459A JP 6245989 A JP6245989 A JP 6245989A JP H02240637 A JPH02240637 A JP H02240637A
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- insulating substrate
- image display
- alignment film
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 37
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 229920001721 polyimide Polymers 0.000 claims abstract description 24
- 239000009719 polyimide resin Substances 0.000 claims abstract description 23
- 239000011347 resin Substances 0.000 claims description 21
- 229920005989 resin Polymers 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 5
- 238000005530 etching Methods 0.000 abstract description 4
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 39
- 239000011521 glass Substances 0.000 description 15
- 238000010438 heat treatment Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 210000002858 crystal cell Anatomy 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000007645 offset printing Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 241000691306 Actia Species 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 108010010803 Gelatin Proteins 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 241000612182 Rexea solandri Species 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229920000159 gelatin Polymers 0.000 description 1
- 239000008273 gelatin Substances 0.000 description 1
- 235000019322 gelatine Nutrition 0.000 description 1
- 235000011852 gelatine desserts Nutrition 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は画像表示機能を有する液晶パネル、とりわけ絵
素毎にスイッチング素子を内蔵したアクティブ型の液晶
画像表示装買において有効な配向膜及びその制作方法に
関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to an alignment film and a method for producing the same which are effective in liquid crystal panels having an image display function, particularly active type liquid crystal image display devices in which a switching element is built in each picture element. It is related to.
従来の技術
近年の微細加工技術、液晶材料及び実装技術等の進歩に
より２〜６インチ程度の小さなサイズではあるが、液晶
パネルで実用上支障ないテレビジラン画像が商用ベース
で得られるようになってきた。液晶パネルを構成する２
枚のガラス板の一方にＲＧＢの着色層を形成しておくこ
とによりカラー表示も容易に実現され、また絵素毎にス
イッチング素子を内蔵させた、いわゆるアクティブ型の
液晶パネルではクロストークも少なくかつ高いコントラ
スト比を有する画像が保証される。Conventional technology Recent advances in microfabrication technology, liquid crystal materials, mounting technology, etc. have made it possible to obtain television images on a commercial basis with liquid crystal panels that are small in size, about 2 to 6 inches, but have no problem in practical use. Ta. Configuring the LCD panel 2
Color display can be easily realized by forming an RGB colored layer on one side of a glass plate, and so-called active type liquid crystal panels, in which each picture element has a built-in switching element, have little crosstalk. An image with a high contrast ratio is guaranteed.
このような液晶パネルは、走査線としては１２０−２４
０本、信号線としては２４０−７２０本程皮膜マトリク
ス編成が標準的で、例えば第３図に示すように液晶パネ
ル１を構成する一方の透光性絶縁性基板、例えばガラス
基板２上に形成された走査線の電極端子群６（図示せず
）に駆動信号を供給する半導体集積回路チップ３を直接
接続するＣ０Ｇ（Ｃｈｉｐ−Ｏｎ−Ｇｌａｓｓ）方式や
、例えばポリイミド系樹脂薄膜をベースとし、金メツキ
されたｗＡ箔の端子群（図示せず）を有する接続フィル
ム４を信号線の電極端子群５に接着削で圧接しながら固
定する方式などの実装手段によって電気信号が画像表示
部に供給される。ここでは便宜上二つの実装方式を同時
に図示しているが、実際にはいずれかの実装方式が選ば
れることは言うまでもない、なお、７．８は液晶パネル
ｌ中央の画像表示部と信号線及び走査線の電極端子群５
．６との間を接続する配線路で、必ずしも電極端子群と
同じ導電材で構成される必要はない。Such a liquid crystal panel has 120-24 scanning lines.
0, and 240 to 720 signal lines are formed in a film matrix as standard, for example, as shown in FIG. The C0G (Chip-On-Glass) method, in which the semiconductor integrated circuit chip 3 that supplies the drive signal is directly connected to the electrode terminal group 6 (not shown) of the scan line, and the An electrical signal is supplied to the image display section by a mounting method such as a method in which a connection film 4 having a terminal group (not shown) of plated wA foil is fixed to the electrode terminal group 5 of the signal line while being pressure-contacted by adhesive cutting. Ru. Here, for convenience, two mounting methods are illustrated at the same time, but it goes without saying that one of the mounting methods will be selected in reality. Wire electrode terminal group 5
．． 6, and does not necessarily need to be made of the same conductive material as the electrode terminal group.
９は全ての絵素に共通の透明導電性の対抗電極を有する
もう１枚の透光性絶縁性基板であるガラス板で、２枚の
ガラス板２．９は石英ファイバやプラスチックビーズ等
のスペーサによって所定の距離を隔てて形成され、その
間隙はシール材と封口材で封止された閉空間になってお
り、閉空間には液晶が充填されている。多くの場合、ガ
ラス板の閉空間側に着色層と称する染料または顔料のい
ずれか一方もしくは両方を含む有機薄膜が被着されて色
表示機能が与えられるのでガラス基板９はカラーフィル
タと呼ばれる。そして液晶材の性質によってはガラス板
９上面またはガラス板２下面のいずれかもしくは両面上
に偏光板が貼付され、液晶パネル１は電気光学素子とし
て機能する。9 is a glass plate which is another transparent insulating substrate having a transparent conductive counter electrode common to all picture elements, and the two glass plates 2.9 are spacers such as quartz fibers or plastic beads. The gap is a closed space sealed with a sealing material and a sealing material, and the closed space is filled with liquid crystal. In many cases, the glass substrate 9 is called a color filter because a colored layer, an organic thin film containing one or both of dyes and pigments, is applied to the closed space side of the glass plate to provide a color display function. Depending on the properties of the liquid crystal material, a polarizing plate is pasted on either or both of the upper surface of the glass plate 9 or the lower surface of the glass plate 2, and the liquid crystal panel 1 functions as an electro-optical element.
第４図は、スイッチング素子として絶縁ゲート型トラン
ジスタ１０を絵素毎に配置したアクティブ型液晶パネル
の等価回路図であり、第５図は同パネルの要部断面図で
ある。実線で描かれた素子は一方のガラス基板２上に、
そして破線で描かれた素子はもう一方のガラス基板９上
に形成されている。走査線１１（８）と信号線１２（７
１は、例えば非晶質シリコンを半導体層とし、シリコン
窒化膜（Ｓｉ３Ｎ４）をゲート絶縁膜とするＴＩＩ＃ト
ランジスタ１０の形成と同時にガラス基板２上に作製さ
れる。液晶セル１３はガラス基板２上に形成された透明
導電性の絵素電極１４と、カラーフィルタ９上に形成さ
れた同じく透明導電性の対抗電極１５と、２枚のガラス
板で構成された閉空間を満たす液晶１６とで構成され、
電気的にはコンデンサと同じ扱いを受ける。FIG. 4 is an equivalent circuit diagram of an active type liquid crystal panel in which insulated gate transistors 10 are arranged as switching elements for each picture element, and FIG. 5 is a sectional view of a main part of the panel. The elements drawn with solid lines are on one glass substrate 2,
The elements drawn with broken lines are formed on the other glass substrate 9. Scanning line 11 (8) and signal line 12 (7)
1 is fabricated on a glass substrate 2 at the same time as the TII# transistor 10 having, for example, amorphous silicon as a semiconductor layer and a silicon nitride film (Si3N4) as a gate insulating film. The liquid crystal cell 13 is a closed cell composed of two glass plates: a transparent conductive pixel electrode 14 formed on a glass substrate 2, and a transparent conductive counter electrode 15 formed on a color filter 9. Consisting of a liquid crystal 16 that fills the space,
Electrically, it is treated the same as a capacitor.
着色された感光性ゼラチンまたは着色性感光樹脂等より
なる着色層１７は先述したように、カラーフィルタ９の
閉空間側で絵素電極１４に対応してＲＧＢの三原色で所
定の配列に従って配置されている。全ての絵素電極１４
に共通の対抗電極１５は着色層１７の存在による電圧配
分損失を避けるためには図示したように着色層１７上に
形成される。液晶１６に接して２枚のガラス板上に被着
された、例えば０．１ μ−程度の膜厚のポリイミド系
樹脂薄膜Ｊｉｉ１８は液晶分子を決められた方向に備え
るための配向膜である。加えて液晶１６にツイスト・ネ
マチック（’ＴＮ）型のものを用いる場合には上下に２
枚の偏光板１９を必要とする。As described above, the colored layer 17 made of colored photosensitive gelatin or colored photosensitive resin is arranged in the three primary colors of RGB in a predetermined arrangement on the closed space side of the color filter 9 in correspondence with the pixel electrode 14. There is. All picture element electrodes 14
A common counter electrode 15 is formed on the colored layer 17 as shown in order to avoid voltage distribution losses due to the presence of the colored layer 17. A polyimide resin thin film Jii 18 having a thickness of, for example, about 0.1 .mu.- is deposited on the two glass plates in contact with the liquid crystal 16, and is an alignment film for arranging liquid crystal molecules in a predetermined direction. In addition, when using a twisted nematic ('TN) type liquid crystal display 16, there are two
Two polarizing plates 19 are required.
ＲＧＢの着色層１７の境界に低反射性の不透明膜２０を
配置すると、ガラス基板２上の信号線等の配線層からの
反射光を防止できてコントラスト比が向上し、またスイ
ッチング素子１０の外部光照射にスとして実用化されて
いる。ブラックマトリクス材の構成も多数考えられるが
、着色層の境界に於ける段差の発生状況と光の透過率を
考慮すると、コスト高にはなるが、０．１ μ−程度の
膜厚のＣ「薄膜が簡便である。When a low-reflectivity opaque film 20 is arranged at the boundary of the RGB colored layer 17, reflected light from wiring layers such as signal lines on the glass substrate 2 can be prevented, the contrast ratio is improved, and the external part of the switching element 10 can be prevented. It has been put into practical use for light irradiation. There are many possible configurations of the black matrix material, but considering the occurrence of steps at the boundaries of the colored layers and the light transmittance, the cost will be high, but the C A thin film is simple.
なお、第４図において蓄積容量２１ばアクティブ型の液
晶パネルとしては必ずしも必須の構成要素とは限らない
が、駆動用信号源の利用効率の向上、浮遊寄生容量の障
害の抑制及び高温動作時の画像のちらつき（フリッカ）
防止等には効果的存在で適宜採用される。また理解を簡
単にするため、絶縁ゲート型トランジスタ１０、走査線
１１、及び蓄積容量２１に加えて光源やスペーサ等の主
要因子は第５図では省略されている。２２は絵素電極１
４と絶縁ゲート型トランジスタ１０のドレインとを接続
するための導電性薄膜で、−船釣には信号線１２と同一
の材質で同時に形成される。Although the storage capacitor 21 in FIG. 4 is not necessarily an essential component for an active type liquid crystal panel, it is useful for improving the utilization efficiency of the driving signal source, suppressing disturbances caused by stray parasitic capacitance, and during high-temperature operation. Image flickering (flicker)
It is effective for prevention and will be adopted as appropriate. Further, to simplify understanding, major factors such as the insulated gate transistor 10, the scanning line 11, the storage capacitor 21, a light source, and a spacer are omitted in FIG. 22 is picture element electrode 1
4 and the drain of the insulated gate transistor 10, and is formed of the same material as the signal line 12 at the same time.
発明が解決しようとする課題
配向膜１８の形成に関しては、単純マトリクス編成の液
晶パネルに於けるオフセット印刷による画像表示部への
選択的塗布と、その後に続＜ ３００−４５０°Ｃ程度
の加熱処理によってなされる制作方法が、アクティブ型
液晶パネルに於いても一般的に採用されている。しかし
ながら、配向膜１８の膜厚が０．１ａｍ程度と薄いこと
、オフセット印刷では周囲の空気を巻き込みピンホール
を内在させ易いこと、そしてアクティブ素子や着色層が
熱破壊しないように２００°Ｃ以下の比較的低温で配向
膜キュア（熱硬化）が実施される。などの理由によりア
クティブ型の液晶パネルに於いては配向膜が主原因とな
る画質上の課題が多く発生している。Problems to be Solved by the Invention Regarding the formation of the alignment film 18, selective application to the image display area by offset printing in a simple matrix liquid crystal panel, followed by heat treatment at about < 300-450°C. This manufacturing method is also commonly used for active type liquid crystal panels. However, the film thickness of the alignment film 18 is as thin as about 0.1 am, offset printing tends to involve surrounding air and cause pinholes, and it is necessary to print at temperatures below 200°C to prevent thermal damage to the active elements and colored layers. The alignment film is cured (thermally cured) at a relatively low temperature. For these reasons, active type liquid crystal panels have many problems with image quality, mainly caused by alignment films.
例えばカラーフィルタを構成する着色層１７は有機薄膜
であるので通常２００°Ｃ程度の耐熱性しか有し得ない
のに対して、アクティブ基板は通常３００℃程度の耐熱
性を有するので、キュア率を高めて信転性の高い配向膜
膜を得るためにはアクティブ基板側の熱処理温度を高く
設定するのはごく自然な取り組みと思われる。ところが
アクティブ基板上の配向膜とカラーフィルタ上の配向膜
の熱処理条件を合致させないと液晶セルにおける等価回
路のバランスが（ずれ、フリッカが発生し易い事が露呈
したので、バランスを取り易くするために２００°Ｃ程
度で１００％キュアするような低温配向膜が開発された
経緯がある。For example, the colored layer 17 constituting the color filter is an organic thin film, so it usually has a heat resistance of only about 200°C, whereas the active substrate usually has a heat resistance of about 300°C, so the cure rate can be reduced. In order to obtain an alignment film with high reliability, it seems natural to set the heat treatment temperature on the active substrate side to a high temperature. However, it has been found that if the heat treatment conditions of the alignment film on the active substrate and the alignment film on the color filter are not matched, the balance of the equivalent circuit in the liquid crystal cell tends to shift (misalignment and flicker occurs). There is a history of developing a low-temperature alignment film that is 100% cured at about 200°C.
低温で硬化するようなポリイミド樹脂、例えば日本合成
ゴム■製のＪＩＢを用いても膜厚ばらつきが大きくキュ
アが完全でない、小さな気泡を内在している、ダスト・
異物あるいは不純物が局所的に混入した等の理由により
、配向膜１８に不均質な領域があると、配向膜１８と下
地の絶縁層との間に電荷が蓄積されることがある。たま
たま、そのような不完全な配向膜が絶縁ゲート型トラン
ジスタ上に位置すると、本発明者の一人が先願例である
特願昭６３−１１３１３４号にて開示したアクティブ基
板（第６図）を参照するまでもなく、配向膜１８は絶縁
ゲート型トランジスタのチャネル部となる非晶質シリコ
ン層２３へのバンク・ゲートとしてエツチング・ストッ
パであるシリコン窒化膜２４を介して作用する。配向膜
１８とシリコン窒化膜２４との間に蓄積された電荷は絶
縁ゲート型トランジスタのＯＦＦ時のリーク電流を増大
させるので、絵素電極１４における信号の保持が弱くな
り点欠陥として観測されるようになり、表示画質の低下
につながるトラブルが発生し易いといった課題があった
。Even if you use polyimide resin that cures at low temperatures, such as JIB manufactured by Japan Synthetic Rubber, there will be large variations in film thickness, and the cure will not be complete.
If there is a non-uniform region in the alignment film 18 due to local mixing of foreign matter or impurities, charges may be accumulated between the alignment film 18 and the underlying insulating layer. By chance, if such an incomplete alignment film is located on an insulated gate transistor, one of the inventors of the present invention can use the active substrate (Fig. 6) disclosed in Japanese Patent Application No. 113134/1983. Needless to say, the alignment film 18 acts as a bank gate to the amorphous silicon layer 23 which becomes the channel portion of the insulated gate transistor via the silicon nitride film 24 which is an etching stopper. The charges accumulated between the alignment film 18 and the silicon nitride film 24 increase the leakage current when the insulated gate transistor is turned off, which weakens the signal retention in the picture element electrode 14 and causes it to be observed as a point defect. This poses a problem in that troubles that lead to a decline in display image quality are likely to occur.
なお、詳細は省略するが第６図において２５はソース・
ドレイン接合におけるオーミック性を確保するための不
純物を含む非晶質シリコン層であり、２６−１は５ｉｆ
ｔまたはＴ ａ 、０．よりなる第１のゲート絶縁膜で
、２６−２はＳｉ、Ｎａよりなる第１のゲート絶縁膜で
あり、Ａ１よりなる信号線１２−１及びドレイン配線２
２−１とアクティブ基板２との間には絶縁ゲート型トラ
ンジスタの耐熱性を向上させるためのバリアｌ１１２−
２及び２２−２が介在している。Although the details are omitted, in Fig. 6, 25 is the source
26-1 is an amorphous silicon layer containing impurities to ensure ohmic properties in the drain junction, and 26-1 is 5if
t or T a , 0. 26-2 is the first gate insulating film made of Si and Na, and the signal line 12-1 and drain wiring 2 made of A1 are
A barrier l112- is provided between the active substrate 2-1 and the active substrate 2 to improve the heat resistance of the insulated gate transistor.
2 and 22-2 are interposed.
課題を解決するための手段
本発明は上記した現状に鑑みなされたもので、感光性ポ
リイミド樹脂を用いるか、ポジ型感光性樹脂の併用によ
り配向膜の選択的形成を可能ならしめたものである。Means for Solving the Problems The present invention was made in view of the above-mentioned current situation, and makes it possible to selectively form an alignment film by using a photosensitive polyimide resin or in combination with a positive photosensitive resin. .
作用
感光性ポリイミド樹脂を用いて紫外線の選択的照射を実
施することにより、絶縁ゲート型トランジスタのチャン
ネル上に配向膜が存在しないように配向膜の選択的形成
が可能となる。By performing selective irradiation with ultraviolet rays using a photosensitive polyimide resin, it becomes possible to selectively form an alignment film so that the alignment film does not exist on the channel of an insulated gate transistor.
あるいはポジ型の感光性樹脂を併用し、パターン化され
た感光性樹脂をマスクとしてアクティア基板上に被着形
成された配向膜を選択的に除去することによっても同様
の構成とする事ができる。Alternatively, a similar structure can be achieved by using a positive type photosensitive resin in combination and selectively removing the alignment film deposited on the Actia substrate using the patterned photosensitive resin as a mask.
実施例
以下、第１図と第２図を参照しながら本発明の実施例に
ついて説明する。第１図は本発明の第１の実施例にかか
るアクティア基板上の断面図である。感光性樹脂と同じ
ように回転塗布によってアクティブ基板２上に塗布され
た感光性ポリイミド帰脂層を、ホトマスクを用いた紫外
線の選択的照射により絶縁ゲート型トランジスタのソー
ス・ドレイン間、すなわちエツチング・ストッパである
Ｓｊ、Ｎ、層２４上を除いて選択的に形成して配向膜２
７としたものである。感光性樹脂としては、例えば旭化
成社製の商品名ＰＩＭＥＬを挙げることができよう。０
．１μ糟程度の膜厚ば代表的な製品であるＦ−５５２４
グレードよりも更に粘度を下げることによって得られる
。Embodiments Hereinafter, embodiments of the present invention will be described with reference to FIGS. 1 and 2. FIG. 1 is a sectional view of the Actia substrate according to the first embodiment of the present invention. The photosensitive polyimide resin layer, which is coated on the active substrate 2 by spin coating in the same way as photosensitive resin, is etched between the source and drain of an insulated gate transistor, that is, as an etching stopper, by selective irradiation with ultraviolet rays using a photomask. Sj, N, is selectively formed except on the layer 24 to form the alignment film 2.
7. As the photosensitive resin, for example, the product name PIMEL manufactured by Asahi Kasei Co., Ltd. can be mentioned. 0
．． F-5524, a typical product, has a film thickness of about 1 μm.
It is obtained by lowering the viscosity further than the grade.
感光性ポリイミド樹脂は、耐熱性と耐薬品性に優れたポ
リイミド樹脂に、紫外線照射による選択的パターン形成
が可能な感光性樹脂の性質を付与した有機樹脂であり、
感光性樹脂と同一の設備及び被着形成方法が適用される
。唯一の差異は感光性樹脂における現象後の１５０°Ｃ
前後のボス；・・ヘークに加えて、感光性ポリイミド樹
脂においては２５０−４５０℃程度の有機樹脂としては
比較的高温の加熱が必要で、この加熱処理によって熱硬
化後の最終的な膜厚とキュア率が決定されることである
。Photosensitive polyimide resin is an organic resin that has been added to polyimide resin, which has excellent heat resistance and chemical resistance, with the properties of a photosensitive resin that allows selective pattern formation by UV irradiation.
The same equipment and adhesion formation method as for photosensitive resins are applied. The only difference is 150°C after the phenomenon in the photosensitive resin.
Front and rear bosses: In addition to hake, photosensitive polyimide resin requires heating at a relatively high temperature for an organic resin of about 250-450℃, and this heat treatment changes the final film thickness after thermosetting. The cure rate is to be determined.
第２図は本発明の第２の実施例にかかるアクティブ基板
２の断面図である。配向膜の選択的形成をポジ型感光性
樹脂を採用することによって可能ならしめたもので、二
つの実施態が可能である。FIG. 2 is a sectional view of an active substrate 2 according to a second embodiment of the invention. The selective formation of the alignment film is made possible by employing a positive photosensitive resin, and two embodiments are possible.
第１の形態としては本発明者の一人が先願例である特開
昭６３−４９７８８号にて開示したようにアクティブ基
板２上で被着・キュアされた配向膜を、パターン化され
た感光性樹脂層２８をマスクとして酸素プラズマにより
選択的に灰化して除去して２９とした後、紫外線の再照
射と再現像により感光性樹脂２日を除去せしめるもので
ある。第２の形態としてはポリイミド樹脂層に東し■製
のポリイミドコーティング剤で商品名セミコファイン３
Ｐ９００シリーズを用いた特殊性を使用するもので、セ
ミコファインを塗布し、て１４０°Ｃ程度のプリキュア
（予備硬化）を行った後に感光性樹脂を塗布し、ホトマ
スクを用いた紫外線の選択的照射を経て感光性樹脂の現
象時に現象液で選択的に上記ポリイミド樹脂層を除去し
て３０とし、感光性樹脂２８をＩＰＡまたはＮＭＰ等の
溶剤で除去した後にポリイミド樹脂層３０の最終キュア
を実施するものである。感光性樹脂にポジ型のものを使
用せねばならない必然性は、その除去にあたり下地のポ
リイミド樹脂を損傷させてはならないことにあり、紫外
線の再照射と再現象による除去方法は除去が簡単なだけ
ではなく、ポリイミド樹脂層への化学的損傷も少なく、
優れた方法と言える。As a first form, one of the inventors of the present invention disclosed in Japanese Patent Laid-Open No. 63-49788, an earlier application, that an alignment film deposited and cured on an active substrate 2 is exposed to a patterned photosensitive layer. After the photosensitive resin layer 28 is selectively incinerated and removed using oxygen plasma as a mask to obtain 29, the photosensitive resin layer 28 is removed by re-irradiation with ultraviolet rays and reimage. In the second form, a polyimide coating agent manufactured by Toshiba Co., Ltd. under the trade name Semico Fine 3 is applied to the polyimide resin layer.
This method uses the special properties of the P900 series, and after applying Semicofine and pre-curing at about 140°C, a photosensitive resin is applied, and selective irradiation with ultraviolet rays is performed using a photomask. After that, the polyimide resin layer 30 is selectively removed with a phenomenon liquid during the phenomenon of the photosensitive resin, and after removing the photosensitive resin 28 with a solvent such as IPA or NMP, final curing of the polyimide resin layer 30 is performed. It is something. The necessity of using a positive type photosensitive resin is that the underlying polyimide resin must not be damaged when removing it, and the removal method by re-irradiation with ultraviolet rays and re-phenomenon is not only easy to remove. There is no chemical damage to the polyimide resin layer.
This can be said to be an excellent method.
発明の効果
以上述べたように本発明においては、従来のようにオフ
セット印刷でアクティブ基板の画像表示部に選択的塗布
した後に熱硬化して配向膜を形成するのではなく、ホト
マスクを用いた紫外線の選択的露光によって感光性ポリ
イミド樹脂を直接アクティブ基板上に選択的に形成する
、あるいは感光性樹脂を併用してポリイミド樹脂をアク
ティブ基板上に選択的に形成するので、絶縁ゲート型ト
ランジスタのソース・ドレイン間の配向膜を選択的に除
去するのは極めて容易であり、その結果として配向膜の
膜厚や膜質の不完全性に伴う点欠陥状の画像むらの発生
は皆無となる優れた効果が得られた。Effects of the Invention As described above, in the present invention, instead of selectively coating the image display area of the active substrate by offset printing and then thermally curing to form an alignment film as in the conventional method, ultraviolet rays are applied using a photomask. The photosensitive polyimide resin is selectively formed directly on the active substrate by selective exposure, or the polyimide resin is selectively formed on the active substrate using a photosensitive resin. It is extremely easy to selectively remove the alignment film between the drains, and as a result, the excellent effect is that there is no occurrence of image unevenness in the form of point defects due to imperfections in the thickness or quality of the alignment film. Obtained.
第１図と第２図はそれぞれ本発明の一実施例に係る液晶
画像表示装置を構成するアクティブ基板の断面図、第３
図は液晶パネルへの実装手段を示す斜視図、第４図はア
クティブ型液晶パネルの等価回路図、第５図は同パネル
の要部断面図、第６図は絶縁ゲート型トランジスタの断
面図である。
１・・・・・・液晶パネル、２・・・・・・アクティブ
基板、９・・・・・・カラーフィルタ、１０・・・・・
・絶縁ゲート型トランジスタ、１１・・・・・・走査線
、１２・・・・・・信号線、１３・・・・・・液晶セル
、Ｉ４・・・・・・絵素電極、工５・・・・・・対抗電
極、Ｉ６・・・・・・液晶、１８・・・・・・配向膜、
２４・・・・・・Ｓｉ、Ｎ、層（エツチング・ストッパ
）、２７・・・・・・パターン化された感光性ポリイミ
ド樹脂層、２日・・・・・・感光性樹脂、２９゜３０・
・・・・・パターン化されたポリイミド樹脂層。
代理人の氏名 弁理士 粟野重孝 はか１名名１図
第 ２ 図
？−アクティブ基板
１２−信号て泉
ｚｚ−ｈレイン配線
２４− 工・ンテンク スドンリザ
２６− 絶縁１
？７−−−感光往ホ７ソイミド肘月旨
？８−懲光憔衡階
？？−ボッイミド市吋ｎ旨
訪
図
／−−一力芝晶ノゾ／ｌ−λし
？・−７７ナイフ基板
３−・−半傳Ａ本テゾフ″
４−一一冥ｙＪフィルム・
５− 電坂境子群
ｑｏ−六う−フイルり
１０−−艶」環７−ト臣Ｆランシスグ
１ｔ一定査諜
／Ｚ −信号縁
１３− ５夜品クル
Ｉ５−・一対抗電極
ノ？1 and 2 are sectional views of an active substrate constituting a liquid crystal image display device according to an embodiment of the present invention, and FIG.
The figure is a perspective view showing the mounting means on the liquid crystal panel, Figure 4 is an equivalent circuit diagram of an active type liquid crystal panel, Figure 5 is a sectional view of the main part of the same panel, and Figure 6 is a sectional view of an insulated gate transistor. be. 1...Liquid crystal panel, 2...Active substrate, 9...Color filter, 10...
- Insulated gate transistor, 11... Scanning line, 12... Signal line, 13... Liquid crystal cell, I4... Picture element electrode, Engineering 5. ... Counter electrode, I6 ... Liquid crystal, 18 ... Alignment film,
24...Si, N, layer (etching stopper), 27...Patterned photosensitive polyimide resin layer, 2nd...Photosensitive resin, 29°30・
...Patterned polyimide resin layer. Name of agent: Patent attorney Shigetaka Awano (1 name, 1 figure, 2 figures) -Active board 12-Signal spring zz-h rain wiring 24-Insulation 1? 7 --- Photo sensitive way 7 Soimido Hizuki effect? 8- Punishing light and balance? ? - Boimido city ni nji visit map / - Ichiriki Shiba Shori nozo / l-λshi?・-77 Knife board 3-・-Handen A book Tezoff'' 4-11 Mei yJ film ・5- Densaka Sakaiko group qo-Rokuu-Filri 10--Gloss'' Environment 7-Toomi F Runsisg 1t Constant Investigation/Z -Signal Edge 13- 5 Night Club I5-・One Opposite Electrode?
Claims (3)
スイッチング素子と絵素電極とを有する第１の透光性絶
縁性基板と、透明導電性の対抗電極を有する第２の透光
性絶縁性基板との間に液晶を充填してなる液晶画像表示
装置において、前記スイッチング素子が絶縁ゲート型ト
ランジスタであり、前記絶縁ゲート型トランジスタのソ
ース・ドレイン間上の配向膜が選択的に除去されている
ことを特徴とする液晶画像表示装置。(1) A first transparent insulating substrate having a plurality of scanning lines and signal lines and having a switching element and a pixel electrode for each unit pixel, and a first transparent insulating substrate having a transparent conductive counter electrode. In a liquid crystal image display device in which a liquid crystal is filled between a translucent insulating substrate and a transparent insulating substrate, the switching element is an insulated gate transistor, and the alignment film between the source and drain of the insulated gate transistor is A liquid crystal image display device characterized in that the liquid crystal image display device is selectively removed.
スイッチング素子として絶縁ゲート型トランジスタと絵
素電極とを有する第１の透光性絶縁性基板と、透明導電
性の対抗電極を有する第２の透光性絶縁性基板との間に
液晶を充填してなる液晶画像表示装置において、前記第
１の透光性絶縁性基板上の配向膜の形成に感光性ポリイ
ミド樹脂を用い、前記絶縁ゲート型トランジスタのソー
ス・ドレイン間上の前記感光性ポリイミド樹脂が選択的
に除去されて前記第１の透光性絶縁性基板上に配向膜が
形成される事を特徴とする液晶画像表示装置の製造方法
。(2) A first light-transmitting insulating substrate having a plurality of scanning lines and signal lines, and having an insulated gate transistor as a switching element and a pixel electrode for each unit pixel; In a liquid crystal image display device in which liquid crystal is filled between a second light-transmitting insulating substrate having a counter electrode, a photosensitive polyimide resin is used to form an alignment film on the first light-transmitting insulating substrate. , the photosensitive polyimide resin between the source and drain of the insulated gate transistor is selectively removed to form an alignment film on the first light-transmitting insulating substrate. A method for manufacturing a liquid crystal image display device.
スイッチング素子として絶縁ゲート型トランジスタと絵
素電極とを有する第１の透光性絶縁性基板と、透明導電
性の対抗電極を有する第２の透光性絶縁性基板との間に
液晶を充填してなる液晶画像表示装置において、前記第
１の透光性絶縁性基板上の配向膜の形成にポリイミド樹
脂とパターン化されたポジ型感光性樹脂を用い、前記パ
ターン化されたポジ型感光性樹脂をマスクとして前記絶
縁ゲート型トランジスタのソース・ドレイン間上の前記
ポリイミド樹脂が選択的に除去されて前記第１の透光性
絶縁性基板上に配向膜が形成される事を特徴とする液晶
画像表示装置の製造方法。(3) A first light-transmitting insulating substrate having a plurality of scanning lines and signal lines, and having an insulated gate transistor as a switching element and a pixel electrode for each unit pixel; In a liquid crystal image display device in which a liquid crystal is filled between a second light-transmitting insulating substrate having a counter electrode, a polyimide resin and a pattern are used to form an alignment film on the first light-transmitting insulating substrate. Using the patterned positive photosensitive resin as a mask, the polyimide resin between the source and drain of the insulated gate transistor is selectively removed. A method for manufacturing a liquid crystal image display device, characterized in that an alignment film is formed on a transparent insulating substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1062459A JPH02240637A (en) | 1989-03-15 | 1989-03-15 | Liquid crystal image display device and production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1062459A JPH02240637A (en) | 1989-03-15 | 1989-03-15 | Liquid crystal image display device and production thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02240637A true JPH02240637A (en) | 1990-09-25 |
Family
ID=13200811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1062459A Pending JPH02240637A (en) | 1989-03-15 | 1989-03-15 | Liquid crystal image display device and production thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02240637A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06202108A (en) * | 1992-10-20 | 1994-07-22 | Matsushita Electric Ind Co Ltd | Liquid crystal display device |
| WO2011037829A2 (en) * | 2009-09-24 | 2011-03-31 | Applied Materials, Inc. | Methods of fabricating metal oxide or metal oxynitride tfts using wet process for source-drain metal etch |
| US8840763B2 (en) | 2009-09-28 | 2014-09-23 | Applied Materials, Inc. | Methods for stable process in a reactive sputtering process using zinc or doped zinc target |
| US8980066B2 (en) | 2008-03-14 | 2015-03-17 | Applied Materials, Inc. | Thin film metal oxynitride semiconductors |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6115179A (en) * | 1984-07-02 | 1986-01-23 | キヤノン株式会社 | Manufacture of substrate for liquid crystal element |
| JPS6424231A (en) * | 1987-07-21 | 1989-01-26 | Alps Electric Co Ltd | Thin film transistor |
-
1989
- 1989-03-15 JP JP1062459A patent/JPH02240637A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6115179A (en) * | 1984-07-02 | 1986-01-23 | キヤノン株式会社 | Manufacture of substrate for liquid crystal element |
| JPS6424231A (en) * | 1987-07-21 | 1989-01-26 | Alps Electric Co Ltd | Thin film transistor |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06202108A (en) * | 1992-10-20 | 1994-07-22 | Matsushita Electric Ind Co Ltd | Liquid crystal display device |
| US8980066B2 (en) | 2008-03-14 | 2015-03-17 | Applied Materials, Inc. | Thin film metal oxynitride semiconductors |
| WO2011037829A2 (en) * | 2009-09-24 | 2011-03-31 | Applied Materials, Inc. | Methods of fabricating metal oxide or metal oxynitride tfts using wet process for source-drain metal etch |
| WO2011037829A3 (en) * | 2009-09-24 | 2011-06-23 | Applied Materials, Inc. | Methods of fabricating metal oxide or metal oxynitride tfts using wet process for source-drain metal etch |
| US8840763B2 (en) | 2009-09-28 | 2014-09-23 | Applied Materials, Inc. | Methods for stable process in a reactive sputtering process using zinc or doped zinc target |
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