JPH034214A - Liquid crystal display device - Google Patents
Liquid crystal display deviceInfo
- Publication number
- JPH034214A JPH034214A JP1140128A JP14012889A JPH034214A JP H034214 A JPH034214 A JP H034214A JP 1140128 A JP1140128 A JP 1140128A JP 14012889 A JP14012889 A JP 14012889A JP H034214 A JPH034214 A JP H034214A
- Authority
- JP
- Japan
- Prior art keywords
- light
- film
- liquid crystal
- shielding film
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- 239000010408 film Substances 0.000 abstract description 85
- 229920005989 resin Polymers 0.000 abstract description 19
- 239000011347 resin Substances 0.000 abstract description 19
- 239000010409 thin film Substances 0.000 abstract description 13
- 239000011521 glass Substances 0.000 abstract description 12
- 229920003002 synthetic resin Polymers 0.000 abstract description 12
- 239000000057 synthetic resin Substances 0.000 abstract description 12
- 230000006866 deterioration Effects 0.000 abstract description 4
- 125000006850 spacer group Chemical group 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 229920003051 synthetic elastomer Polymers 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 102100022717 Atypical chemokine receptor 1 Human genes 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 101000678879 Homo sapiens Atypical chemokine receptor 1 Proteins 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- IYUOYLLVOZNGKW-UHFFFAOYSA-N 2-azidonaphthalene-1,4-dione Chemical compound C1=CC=C2C(=O)C(N=[N+]=[N-])=CC(=O)C2=C1 IYUOYLLVOZNGKW-UHFFFAOYSA-N 0.000 description 1
- DJHGAFSJWGLOIV-UHFFFAOYSA-N Arsenic acid Chemical compound O[As](O)(O)=O DJHGAFSJWGLOIV-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229920002396 Polyurea Polymers 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229940000488 arsenic acid Drugs 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Liquid Crystal Display Device Control (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、たとえば薄膜トランジスタなどを付加したア
クティブマトリックス方式液晶表示装置などのような液
晶表示装置に関し、もつと詳しくは、たとえば強い光が
照射されるプロジェクション用の透過形液晶表示装置な
どとして好適に用いられる液晶表示装置に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a liquid crystal display device such as an active matrix type liquid crystal display device to which thin film transistors are added. The present invention relates to a liquid crystal display device that is suitably used as a transmission type liquid crystal display device for commercial use.
従来の技術
第６図は典型的な先行技術の簡略化した平面図であり、
第７図は第６図の切断面線■−■から見た断面図である
。これらの図面を参照して、プロジェクション装置用の
アクティブマトリックス方式液晶表示装置において、一
方のガラス基板２上には、ソースバス電極３と、ゲート
バス電極４とが絶縁ｌ１１５を介して相互に絶縁されて
、格子状にマトリックス形成されている。このガラス基
板２上には、半導体スイッチング素子である薄膜トラン
ジスタ（略称ＴＰＴ）９が形成され、そのチャネル部１
０はゲートバス電極４に関連して設けられ、ソース電極
１１はソースバス電極３に接続され、ドレイン電ｉ１２
は透明導電膜によって形成される絵素電極１３に接続さ
れる。薄膜トランジスタ９と絵素電極１３との上には、
配向膜１４が形成される。もう１つのガラス基板１上に
は、薄膜トランジスタ９、ソースバス電８ｉ！３および
ゲートバス電極４に対応して、遮光膜６が形成される。Prior Art FIG. 6 is a simplified plan view of a typical prior art;
FIG. 7 is a cross-sectional view taken along the section line ■--■ in FIG. 6. Referring to these drawings, in an active matrix liquid crystal display device for a projection device, a source bus electrode 3 and a gate bus electrode 4 are insulated from each other on one glass substrate 2 via an insulator 115. A matrix is formed in the form of a lattice. A thin film transistor (abbreviated as TPT) 9, which is a semiconductor switching element, is formed on this glass substrate 2, and its channel portion 1
0 is provided in relation to the gate bus electrode 4, the source electrode 11 is connected to the source bus electrode 3, and the drain electrode i12
is connected to a picture element electrode 13 formed of a transparent conductive film. On the thin film transistor 9 and the picture element electrode 13,
An alignment film 14 is formed. On the other glass substrate 1 are a thin film transistor 9 and a source bus voltage 8i! A light shielding film 6 is formed corresponding to the gate bus electrode 3 and the gate bus electrode 4 .
ガラス基板１の遮光膜６が形成されている領域および残
余の領域には透明導電膜１５が全面にわたって形成され
、その上に配向膜１６が形成される。A transparent conductive film 15 is formed over the entire surface of the area where the light shielding film 6 is formed and the remaining area of the glass substrate 1, and an alignment film 16 is formed thereon.
遮光膜６は第６１２！において斜線を施して示す。The light shielding film 6 is the 612th! Indicated by diagonal lines.
遮光Ｍ６は、絵素電極１３ならびにソースバス電Ｆｆｉ
３およびゲートバス電ｆｉ４の間からの光漏れを防止し
て表示コントラストおよび色再現性を向上するなめに用
いられる。この遮光膜６は金Ｒ製または有色合成樹脂製
である。The light shielding M6 is connected to the picture element electrode 13 and the source bus voltage Ffi.
This is used to improve display contrast and color reproducibility by preventing light leakage between the gate bus line 3 and the gate bus line fi4. This light shielding film 6 is made of gold R or colored synthetic resin.
発明が解決しようとする課題
第６図および第７図の先行技術では、遮光膜６は、基板
１上で絵素電極１３以外の残余の領域に対応して形成さ
れており、このような遮光膜６は、基板１，２の相対的
な位置がずれても、絵素電極１３ならびにソースバス電
極３およびゲートバス電極４の間からの光漏れを防止す
るために、大きい面積を有し、その遮光膜６が形成され
ていない開口の領域を絵素電極１３よりも小さくして、
いわゆるマージンを必要とする。したがって第６図およ
び第７図の先行技術では、遮光膜６が形成されていない
開口領域の面積が比較的小さく、開口率が低下するとい
う問題がある。Problems to be Solved by the Invention In the prior art shown in FIGS. 6 and 7, the light shielding film 6 is formed on the substrate 1 corresponding to the remaining area other than the picture element electrode 13. The film 6 has a large area in order to prevent light leakage from between the picture element electrode 13 and between the source bus electrode 3 and gate bus electrode 4 even if the relative positions of the substrates 1 and 2 are shifted. The area of the opening where the light shielding film 6 is not formed is made smaller than the picture element electrode 13,
It requires a so-called margin. Therefore, the prior art shown in FIGS. 6 and 7 has a problem in that the area of the opening region where the light shielding film 6 is not formed is relatively small, and the aperture ratio is reduced.
前述のマージンを不要とし、開口率の低下を防止するた
めに、第６ｒ２および第７（２１の先行技術とは異なり
、薄膜トランジスタが形成された同一基板上の７１膜ト
ランジスタ上に薄膜トランジスタ、ソースバス電極およ
びゲートバス電極に対応して金属製または有色合成樹脂
製の遮光膜を形成した液晶表示装置が提案されている。In order to eliminate the need for the above-mentioned margin and prevent a reduction in the aperture ratio, unlike the 6r2 and 7th (21) prior art, the thin film transistor and source bus electrode are placed on the 71 film transistor on the same substrate on which the thin film transistor is formed. Also, a liquid crystal display device has been proposed in which a light-shielding film made of metal or colored synthetic resin is formed in correspondence with the gate bus electrode.
この液晶表示装置では、第６図および第７図の先行技術
と比較して、遮光膜がソース電極やゲート電極などに近
接して形成される。このなめ、金属製の遮光膜を形成し
た液晶表示装置ではソース電極やゲート電極などと導電
性の大きい金属製遮光膜との間で電流の漏洩が多発し、
生産歩留まりが悪く実用化が困難であるという問題があ
る。In this liquid crystal display device, the light shielding film is formed closer to the source electrode, gate electrode, etc., compared to the prior art shown in FIGS. 6 and 7. Because of this, in liquid crystal display devices with metal light-shielding films, current often leaks between the source electrode, gate electrode, etc. and the highly conductive metal light-shielding film.
There is a problem in that the production yield is low and it is difficult to put it into practical use.
有色合成樹脂製の遮光膜を形成した液晶表示装置では、
装置作成上、有色合成樹脂が薄膜トランジスタ、ソース
バス電極およびゲートバス電極だけではなくて絵素電極
の一部をも覆う構造となる。In liquid crystal display devices with a light-shielding film made of colored synthetic resin,
When manufacturing the device, the colored synthetic resin covers not only the thin film transistor, source bus electrode, and gate bus electrode, but also part of the picture element electrode.
このため、液晶だけではなく、絵素電極を被覆した有色
合成樹脂にも電圧が印加され、液晶の電圧保持率が低下
し、コントラスト低下が生じて表示品位が劣１ヒすると
いう問題がある。第１表に有色合成樹脂が絵素電極と被
覆している面積の割合（電極Ｔｌｌ覆面積比）と液晶の
電圧保持率との関係を示す、第１表中、有色合成樹脂製
の遮光膜としてカラーモザイクＣＫ（商品名：富士ハン
ト株式会社製）を用いた場合を参照符ＣＫ、ＪＤＳ（商
品名二日本合成ゴム株式会社製）をＢＩ：ａｃｋ−１８
１（商品名：日本化薬株式会社製）で染色した有色合成
樹脂製の遮光膜を用いた場合を参照符ＪＤＳで示す。Therefore, voltage is applied not only to the liquid crystal but also to the colored synthetic resin covering the picture element electrodes, resulting in a problem in that the voltage retention rate of the liquid crystal decreases, contrast decreases, and display quality deteriorates. Table 1 shows the relationship between the ratio of the area covered by the colored synthetic resin to the pixel electrode (electrode Tll covering area ratio) and the voltage holding rate of the liquid crystal. Reference mark CK is when Color Mosaic CK (product name: manufactured by Fuji Hunt Co., Ltd.) is used, and BI: ack-18 is JDS (product name: manufactured by Nippon Synthetic Rubber Co., Ltd.).
1 (trade name: manufactured by Nippon Kayaku Co., Ltd.) using a light-shielding film made of a colored synthetic resin is indicated by the reference JDS.
第 １ 表
本発明の目的は、遮光膜が形成されていない開口領域の
面積を増大して表示品位を向上させ、かつ光による表示
品位の低下を生じさせないようにした液晶表示装置を提
供することである。Table 1 An object of the present invention is to provide a liquid crystal display device that improves display quality by increasing the area of an opening region where a light-shielding film is not formed, and that prevents deterioration of display quality due to light. It is.
課題を解決するための手段
本発明は、一方の基板上に形成された半導体スイッチン
グ素子を介して絵素電極に、一方電位を与え−
他方の透光性基板上に前記絵素電極に対応して形成した
対向電極に他方電位を与え、
両基板間に液晶が充填される液晶表示装置において、
前記半導体スイッチング素子は、前記一方基板上に遮光
膜を介して形成されることを特徴とする液晶表示装置で
ある。Means for Solving the Problems The present invention applies one potential to a picture element electrode via a semiconductor switching element formed on one substrate, and applies a potential to a picture element electrode on the other transparent substrate corresponding to the picture element electrode. A liquid crystal display device in which a potential is applied to the opposite electrode formed by the substrate and a liquid crystal is filled between the two substrates, wherein the semiconductor switching element is formed on the one substrate with a light shielding film interposed therebetween. It is a display device.
作 用
本発明に従えば、半導体スイッチング素子に対応して前
記一方基板上に遮光膜が形成され、これによって前記一
方基板の後方から照射される光が半導体スイッチング素
子に入射することが防がれ、表示品位の低下は生じない
。According to the present invention, a light shielding film is formed on the one substrate corresponding to the semiconductor switching element, thereby preventing light irradiated from the rear of the one substrate from entering the semiconductor switching element. , no deterioration in display quality occurs.
前記他方基板の後方から照射される光は半導体スイッチ
ング素子に入射する。しかし、たとえば、プロジェクシ
ョン装置用としての用途では、前記一方基板の後方から
光が照射され、この光による半導体スイッチング素子の
誤動作を防止することが必要であり、前記他方基板の後
方から光は一般に羽いので半導体スイッチング素子に悪
影響を及ぼすことはない。Light irradiated from the rear of the other substrate enters the semiconductor switching element. However, for example, when used in a projection device, light is emitted from the rear of the one substrate, and it is necessary to prevent malfunctions of semiconductor switching elements due to this light, and generally light is emitted from the rear of the other substrate. Therefore, there is no adverse effect on semiconductor switching elements.
本発明に従えば、半導体スイッチング素子と遮光膜とが
共に前記一方基板上に形成され、半導体スイッチング素
子が形成された基板と、遮光膜が形成された基板とを液
晶充填空間をあけて貼り合わせて液晶表示装置を構成す
るものであり、基板の位置ずれに対するマージンは必要
ない、これによって開口率の低下を防止することができ
、明るい表示を行うことができるようになり、表示品位
の向上を図ることができる。According to the present invention, both the semiconductor switching element and the light-shielding film are formed on the one substrate, and the substrate on which the semiconductor switching element is formed and the substrate on which the light-shielding film is formed are bonded together with a space for filling the liquid crystal. This makes it possible to prevent a decrease in the aperture ratio, thereby making it possible to display bright images and improve display quality. can be achieved.
実施例
第１図は本発明の一実施例の簡略化した平面図であり、
第２図は第１図切断面線１−１から見た断面図である。Embodiment FIG. 1 is a simplified plan view of an embodiment of the present invention.
FIG. 2 is a sectional view taken along the section line 1--1 in FIG.
これらの図面を参照して、プロジェクション装置用のア
クティブマトリックス方式液晶表示装置において、一方
のガラス基板２上には、ソースバス電極３と、ゲートバ
ス電４］１ｉ４とが絶縁Ｍ５を介して相互に絶縁されて
、格子状にマトリックス形成されている。このガラス基
板２上には、有色合成樹脂製の遮光膜６およびそれに隣
接して透明樹脂膜７が形成される。Referring to these drawings, in an active matrix liquid crystal display device for a projection device, on one glass substrate 2, a source bus electrode 3 and a gate bus electrode 4]1i4 are connected to each other via an insulation M5. It is insulated and formed into a grid-like matrix. On this glass substrate 2, a light shielding film 6 made of colored synthetic resin and a transparent resin film 7 adjacent thereto are formed.
有色合成樹脂製の遮光膜６では、十分な遮光性を得るた
めには少なくとも１μｍの厚みが必要である。遮光膜の
存在する領域と存在しない領域との段差が０．５μｍ以
上あるとラビング法などによる配向処理を行った場合に
、この領域間の段差のために液晶が完全には配向しない
部分ができてしまう、透明樹脂膜７は遮光膜の存在する
領域と存在しない領域との段差を小さくして液晶の配向
不良をなくすために用いる。The light-shielding film 6 made of colored synthetic resin needs to have a thickness of at least 1 μm in order to obtain sufficient light-shielding properties. If there is a step difference of 0.5 μm or more between the area where the light-shielding film is present and the area where it is not present, when alignment treatment is performed by rubbing, etc., there will be areas where the liquid crystal is not completely aligned due to the step difference between the areas. The transparent resin film 7 is used to reduce the difference in level between the region where the light shielding film is present and the region where the light shielding film is not present, thereby eliminating alignment defects of the liquid crystal.
遮光膜６および透明樹脂膜７上に保護膜８を形成した後
、遮光膜６の上方に保護膜８を介して半導体スイッチン
グ素子である薄膜トランジスタ（略称ＴＰＴ）９が形成
され、そのチャ木ル部１０はゲートバスｔｉ４に関連し
て設けられ、ソース電極１１はソースバス電極３に接続
され、トレイン電＆１２は透明導１！膜によって形成さ
れる絵素電極１３に接続される。３膜トランジスタ９と
絵素電極１３との上には、配向１１Ｒ１４が形成される
。After forming a protective film 8 on the light shielding film 6 and the transparent resin film 7, a thin film transistor (abbreviated as TPT) 9, which is a semiconductor switching element, is formed above the light shielding film 6 via the protective film 8, and 10 is provided in connection with the gate bus ti4, the source electrode 11 is connected to the source bus electrode 3, and the train conductor &12 is a transparent conductor 1! It is connected to a picture element electrode 13 formed by a film. An orientation 11R14 is formed on the three-film transistor 9 and the picture element electrode 13.
らう１つのガラス基板１上には、透明導電膜１５が全面
にわたって形成され、その上に配向１１ｉ１６が形成さ
れる。ガラス基板１，２間にスペーサ２２を介して液晶
２３が封入され、液晶表示装置が形成される。遮光膜６
は第１［Ｊにおいて斜線を施して示す。A transparent conductive film 15 is formed over the entire surface of the second glass substrate 1, and an orientation 11i16 is formed thereon. A liquid crystal 23 is sealed between glass substrates 1 and 2 via a spacer 22 to form a liquid crystal display device. Light shielding film 6
is indicated by diagonal lines in the first [J].
第３（２Ｉは本発明の一実施例に使用する薄膜トランジ
スタの構造を示す断面図である。タンタル、クロム、ア
ルミニウムまたは銅からなるゲート電極１７上に、窒化
シリコンからなるゲート絶縁膜１８を介してアモルファ
スシリコンからなる半導体Ｈ１９が形成される。この半
導体Ｍ１９の上にｎｏ−アモルファスシリコン膜２０が
接触せずに対抗するように堆積される。さらにこのｒｊ
”−アモルファスシリコン膜１９の上に、タンタル、
クロム、アルミニウムまたは銅などからなるソース電ｉ
ｌｌとタンタル、クロム、アルミニウムまた銅などから
なるドレイン電極１２とが接触せずに対向するように堆
積される。A third (2I) is a cross-sectional view showing the structure of a thin film transistor used in an embodiment of the present invention. A semiconductor H19 made of amorphous silicon is formed.A no-amorphous silicon film 20 is deposited on this semiconductor M19 so as to face it without contacting it.Furthermore, this rj
”-Tantalum, on the amorphous silicon film 19
A source electrode made of chromium, aluminum or copper, etc.
ll and a drain electrode 12 made of tantalum, chromium, aluminum, copper, or the like are deposited so as to face each other without contacting each other.
これらの形成工程のうち、ゲート電極、ソース電極、ド
レイン電極はスパッタ法によって形成されるため基板を
高温下にさらす必要はなく、下地として形成した樹脂膜
への影響はないが、ゲート絶縁膜、アモルファスシリコ
ンからなる半導体膜、［１’−アモルファスシリコン膜
の形成は通常のプラズマＣＶＤ法（プラズマ化学気相成
長法）を用いた場合３５０℃程度の高温下で形成する必
要があり下地への影響が大きいためここではＥＣＲプラ
ズマＣＶＤ法を用いて１００℃程度の温度条件で形成す
る。Among these formation steps, the gate electrode, source electrode, and drain electrode are formed by sputtering, so there is no need to expose the substrate to high temperatures, and there is no effect on the resin film formed as the base, but the gate insulating film, The formation of a semiconductor film made of amorphous silicon, [1'-amorphous silicon film, requires formation at a high temperature of about 350°C when using normal plasma CVD method (plasma chemical vapor deposition method), which affects the underlying layer. Since the temperature is large, the ECR plasma CVD method is used here to form the film at a temperature of about 100°C.
第４１２１は本発明の一実施例の製造工程図である。No. 4121 is a manufacturing process diagram of an embodiment of the present invention.
まず第４図（１）および（２）に示すように、ガラス基
板２上にＤＡＲＣ（商品名： Ｂｒｅｗｅｒ５ｃｉｅｎ
ｃｅ ｉｎｃ、 製）を用いて黒色ポリイミドの遮光膜
６を塗布する。その場合４０００ ｒ ｐ ｒｎ 、の
回転数でスピンコードを行い、４．５μｍの厚さの膜を
得ることができる。第４図〈３）に示すように、この膜
を９０℃で６０分加熱した後、ポジレジスト０ＦＰＲ−
８００（商品名二東京応化株式会社製）２１を塗布し、
第４図〈４）に示すように９０℃で３０分ブレベークし
た後、紫外光によって露光し、現像液ＤＥ−３（商品名
二東京応ｊヒ株式会社製）を用いて現像し、１８０’Ｃ
で３０分ポストベークする。第４図（５）に示すように
、その上にＡＲＣ（商品名： Ｂｒｅｗｅｒ ５ｃｉｅ
ｎｃｅ ｉｎｃ。First, as shown in FIG. 4 (1) and (2), DARC (product name: Brewer5cien) is placed on the glass substrate 2.
A black polyimide light-shielding film 6 is applied using CE Inc.). In that case, a spin code is performed at a rotational speed of 4000 r p rn to obtain a film with a thickness of 4.5 μm. As shown in Figure 4 (3), after heating this film at 90°C for 60 minutes, a positive resist 0FPR-
Apply 800 (product name: Ni-Tokyo Ohka Co., Ltd.) 21,
As shown in Figure 4 (4), after 30 minutes of bre-baking at 90°C, exposure to ultraviolet light and development using developer DE-3 (trade name: Ni-Tokyo Ojhi Co., Ltd.) was carried out to give a 180' C
Post-bake for 30 minutes. As shown in Figure 4 (5), ARC (product name: Brewer 5cie) is placed on top of it.
nce inc.
製）を４０００ｒｐｍ、の回転数でスピンコードを行い
、４．５μｍの厚さの透明樹脂膜７を得ることができる
。第４図（６）に示すようにこの状態で９０℃で６０分
加熱した後、アセトン中で超音波洗浄を１〜２分行い、
リフトオフによってポジレジスト２１とレジスト上の透
明樹脂膜７を同時に除去する。さらに第４図（７）に示
すように、酸化シリコンを蒸着して０．４μｍの厚さの
保護膜８を形成した後、第４図（８）に示すように、薄
膜トランジスタ９およびインジウム酸化絹による絵素型
［ｉ１３を形成する。A transparent resin film 7 having a thickness of 4.5 μm can be obtained by spin-coding a 4000 rpm rotation speed. As shown in Figure 4 (6), after heating at 90°C for 60 minutes in this state, ultrasonic cleaning was performed in acetone for 1 to 2 minutes.
The positive resist 21 and the transparent resin film 7 on the resist are simultaneously removed by lift-off. Furthermore, as shown in FIG. 4 (7), after silicon oxide is deposited to form a protective film 8 with a thickness of 0.4 μm, as shown in FIG. 4 (8), a thin film transistor 9 and an indium oxide silk A picture element type [i13 is formed.
さらに第４図（９）に示すように、ポリイミドによる配
向膜１４を塗布、焼成するが、この時に１８０℃程度の
熱が加わるため遮光膜の樹脂としては２００℃程度の耐
熱性をもつ必要がある。Furthermore, as shown in FIG. 4 (9), an alignment film 14 made of polyimide is coated and fired, but at this time heat of about 180°C is applied, so the resin of the light shielding film needs to have a heat resistance of about 200°C. be.
配向膜１４としては、上記のポリイミドの他にＳｉＯ２
を蒸着して形成することができるにの場合は、焼成の必
要がないため耐熱性を考慮する必要はない、続いて第４
図（１０）に示すように、スペーサ２２を散布し、イン
ジウム酸化島による透明電極１５およびポリイミドによ
る配向膜１６が形成されたガラス基板１と貼り会わせ、
液晶２３を注入することにより、第１図および第２図に
示した液晶表示装置を得る。As the alignment film 14, in addition to the above-mentioned polyimide, SiO2
In the case of 4, which can be formed by vapor deposition, there is no need to consider heat resistance because there is no need for firing.
As shown in FIG. 10, spacers 22 are scattered and bonded to the glass substrate 1 on which the transparent electrode 15 made of indium oxide islands and the alignment film 16 made of polyimide are formed.
By injecting liquid crystal 23, the liquid crystal display device shown in FIGS. 1 and 2 is obtained.
また、第４図（５）に示すＡＲＣ塗布工程を省くことに
より、第５図に示す本発明の他の実施例の液晶表示装置
を得る０本実施例は前述の実施例に類似し、対応する部
分には同一の参照符を付す。Furthermore, by omitting the ARC coating step shown in FIG. 4(5), a liquid crystal display device according to another embodiment of the present invention shown in FIG. The same reference numerals are given to the corresponding parts.
注目すべき点は第２図の透明樹脂Ｍ７が形成されていな
い点である。前述したように、遮光膜の存在する領域と
存在しない領域との段差が０．５μｍ未満であると、液
晶の配向不良は生じないので透明樹脂膜を形成する必要
はない。What should be noted is that the transparent resin M7 shown in FIG. 2 is not formed. As described above, if the difference in level between the region where the light shielding film is present and the region where it is not present is less than 0.5 μm, alignment failure of the liquid crystal will not occur, so there is no need to form a transparent resin film.
有色合成樹脂製の遮光膜６および透明樹脂膜７のａ脂膜
材料としては、ポリイミド、ポリアミド、ポリ尿素、ポ
リウレタン、アクリル、ボリゲイヒ酸、環化ゴム、ナフ
トキノンアジドおよびそれらの誘導体などを用いること
ができる。Polyimide, polyamide, polyurea, polyurethane, acrylic, borageic arsenic acid, cyclized rubber, naphthoquinone azide, and derivatives thereof can be used as the material for the light-shielding film 6 and the transparent resin film 7 made of colored synthetic resin. can.
遮光膜として使用する場きには、前記樹脂材料を染色す
るかあるいは前記樹脂材料に顔料またはカーボンを分散
して用いる。樹脂材料自体が遮光性を有する場合はこの
必要はない。When used as a light-shielding film, the resin material is dyed or pigment or carbon is dispersed in the resin material. This is not necessary if the resin material itself has light blocking properties.
有色合成樹脂製の遮光膜を形成すると、金属製の遮光膜
を用いた場合とは異なり、遮光膜と電極間の電流の漏洩
は発生せず、生産歩留まりがよくなる。When a light-shielding film made of colored synthetic resin is formed, unlike the case where a metal light-shielding film is used, current leakage between the light-shielding film and the electrodes does not occur, and the production yield is improved.
チタン、クロムなどの金属製の遮光膜を形成す・る場合
には電流の漏洩が生じないような膜厚の保護膜を形成す
る。When forming a light-shielding film made of metal such as titanium or chromium, the protective film should be thick enough to prevent current leakage.
具体的には、遮光膜としてカーボンブラックを分散した
樹脂であるカラーモザイクＣＫ（商品名；富士ハント株
式会社製）や染色樹脂基質であるＪＤＳ （商品名：日
本合成ゴム株式会社製）など感光性を持つ樹脂を用いる
こともでき、その場合は第４図（３）に示すフォトレジ
ストを用いる事なく所定のパターンを形成できる。その
場きも同種または異種の透明樹脂を用いて平坦化を図る
ことが可能である。これらの有色樹脂の可視光の透過率
は厚さ４．５μｍのＤＡＲＣ（商品名：Ｂｒｅｗｅｒ
５ｃｉｅｎｃｅ ｉｎｅ、製 ） で １ ％ （
５００ｎ ｒｎ ） 、厚さ１５μｍのカラーモ
ザイクＣＫ（商品名・富士ハント株式会社製）で２％（
７００ｎ ｍ ）、厚さ１．１μｍのＪＤＳ （商品名
二日本合成ゴム株式会社製、日本化薬製Ｂｌａｃｋ−１
８１によって染色）で３％（４５０ｎｍ）程度である。Specifically, we use photosensitive materials such as Color Mosaic CK (product name; manufactured by Fuji Hunt Co., Ltd.), which is a resin in which carbon black is dispersed as a light-shielding film, and JDS (product name: manufactured by Japan Synthetic Rubber Co., Ltd.), which is a dyed resin substrate. It is also possible to use a resin having the following properties, in which case a predetermined pattern can be formed without using a photoresist as shown in FIG. 4(3). It is also possible to achieve flattening at that point by using the same or different types of transparent resin. The visible light transmittance of these colored resins is 4.5 μm thick DARC (product name: Brewer).
5science ine) and 1% (manufactured by
500n rn ), 2% (
700nm), 1.1μm thick JDS (product name Nippon Synthetic Rubber Co., Ltd., Nippon Kayaku Black-1)
81) and about 3% (450 nm).
実用上十分な色再現性を得るためには明暗の輝度比が４
０：１程度が必要になるが第６図および第７図に示した
先行技術の液晶表示装置では、絵素部面積４０、薄膜ト
ランジスタ、ソースライン、ゲートラインなどの金属膜
によって遮光される部分の面積が２５、遮光膜によって
遮光される部分の面積が３５という比になっており、絵
素部のみでの輝度比を１００：Ｏと仮定すると遮光膜の
透過率が２．９３％でコントラスト４０：１が得られ上
記３種の遮光膜はこの条件にほぼ適きする。In order to obtain sufficient color reproducibility for practical use, the brightness ratio of light and dark must be 4.
However, in the prior art liquid crystal display devices shown in FIGS. 6 and 7, the area of the pixel portion is 40, and the area of the thin film transistor, source line, gate line, etc. that is shielded from light by the metal film is approximately 0:1. The area is 25, and the area of the part blocked by the light shielding film is 35. Assuming that the brightness ratio of only the picture element part is 100:O, the transmittance of the light shielding film is 2.93% and the contrast is 40. :1 was obtained, and the above three types of light shielding films are almost suitable for this condition.
発明の効果
以上のように本発明によれば、遮光膜と半導体スイッチ
ング素子とが同一基板上に形成されるので前述のいわゆ
るマージンを必要とせず、開口率の低下を防止すること
ができ、明るい表示を行うことができるようになる。Effects of the Invention As described above, according to the present invention, since the light-shielding film and the semiconductor switching element are formed on the same substrate, the above-mentioned so-called margin is not required, and a reduction in the aperture ratio can be prevented. You will be able to display it.
また本発明によれば、一方基板上に遮光膜と半導体スイ
ッチング素子が形成され、この遮光膜によって前記一方
基板側からの光の半導体スイッチング素子への入射が防
止され、光による特性の劣化が防止される。Further, according to the present invention, a light-shielding film and a semiconductor switching element are formed on one substrate, and this light-shielding film prevents light from entering the semiconductor switching element from the one-side substrate side, thereby preventing deterioration of characteristics due to light. be done.
また本発明によれば、遮光膜の上に半導体スイッチング
素子が形成され、この半導体スイッチング素子と絵素電
極が接続されるので、遮光膜が絵素電極の一部を覆うよ
うな構造にはならない、このため、液晶の電圧保持率が
低下することもなく、表示品位の低下もみられない。Further, according to the present invention, a semiconductor switching element is formed on the light-shielding film, and the semiconductor switching element and the picture element electrode are connected, so that a structure in which the light-shielding film partially covers the picture element electrode is not created. Therefore, the voltage holding rate of the liquid crystal does not decrease, and the display quality does not deteriorate.
第１図は本発明の一実施例の簡略化した平面図、第２図
は第１図の切断面線＞ｒから見た断面図、第３図は本発
明の一実施例に使用する薄膜トランジスタの断面図、第
４図は本発明の一実施例の製造工程図、第５図は本発明
の他の実施例の断面図、第６１１Ｊは典型的な先行技術
の簡略化した平面図、第７図は第１図の切断面線■−■
から見た断面図である。FIG. 1 is a simplified plan view of an embodiment of the present invention, FIG. 2 is a sectional view taken from the section line >r in FIG. 1, and FIG. 3 is a thin film transistor used in an embodiment of the present invention. 4 is a manufacturing process diagram of one embodiment of the present invention, FIG. 5 is a sectional view of another embodiment of the present invention, FIG. 611J is a simplified plan view of a typical prior art, and FIG. Figure 7 shows the cutting plane line in Figure 1 ■-■
FIG.
Claims (1)
して絵素電極に、一方電位を与え、他方の透光性基板上
に前記絵素電極に対応して形成した対向電極に他方電位
を与え、 両基板間に液晶が充填される液晶表示装置において、 前記半導体スイッチング素子は、前記一方基板上に遮光
膜を介して形成されることを特徴とする液晶表示装置。[Claims] One potential is applied to a picture element electrode through a semiconductor switching element formed on one substrate, and a counter electrode is formed on the other transparent substrate corresponding to the picture element electrode. A liquid crystal display device in which a potential is applied to the other substrate and liquid crystal is filled between both substrates, wherein the semiconductor switching element is formed on the one substrate with a light shielding film interposed therebetween.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1140128A JPH034214A (en) | 1989-05-31 | 1989-05-31 | Liquid crystal display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1140128A JPH034214A (en) | 1989-05-31 | 1989-05-31 | Liquid crystal display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH034214A true JPH034214A (en) | 1991-01-10 |
Family
ID=15261550
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1140128A Pending JPH034214A (en) | 1989-05-31 | 1989-05-31 | Liquid crystal display device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH034214A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04276722A (en) * | 1991-03-05 | 1992-10-01 | Oki Electric Ind Co Ltd | Active matrix driving type liquid crystal display |
| JPH052187A (en) * | 1991-01-31 | 1993-01-08 | Semiconductor Energy Lab Co Ltd | Liquid crystal electrooptical device |
| JP2003273365A (en) * | 2002-03-19 | 2003-09-26 | Advanced Display Inc | Display device |
| CN100379024C (en) * | 1994-12-27 | 2008-04-02 | 株式会社半导体能源研究所 | Semiconductor device |
| US7852421B2 (en) * | 1995-10-12 | 2010-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| JP2014059559A (en) * | 2007-07-31 | 2014-04-03 | Hitachi Metals Ltd | Cu WIRING FILM |
-
1989
- 1989-05-31 JP JP1140128A patent/JPH034214A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH052187A (en) * | 1991-01-31 | 1993-01-08 | Semiconductor Energy Lab Co Ltd | Liquid crystal electrooptical device |
| JPH04276722A (en) * | 1991-03-05 | 1992-10-01 | Oki Electric Ind Co Ltd | Active matrix driving type liquid crystal display |
| CN100379024C (en) * | 1994-12-27 | 2008-04-02 | 株式会社半导体能源研究所 | Semiconductor device |
| US7852421B2 (en) * | 1995-10-12 | 2010-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| US8094254B2 (en) | 1995-10-12 | 2012-01-10 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix display device comprising a light shielding layer surrounding a transparent conductive film and a portion of said light shielding layer extends over and said transparent conductive film |
| US8446537B2 (en) | 1995-10-12 | 2013-05-21 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device having resin layer contacts a transparent conductive film |
| JP2003273365A (en) * | 2002-03-19 | 2003-09-26 | Advanced Display Inc | Display device |
| JP2014059559A (en) * | 2007-07-31 | 2014-04-03 | Hitachi Metals Ltd | Cu WIRING FILM |
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