JPH043114B2 - - Google Patents

Info

Publication number
JPH043114B2
JPH043114B2 JP59265846A JP26584684A JPH043114B2 JP H043114 B2 JPH043114 B2 JP H043114B2 JP 59265846 A JP59265846 A JP 59265846A JP 26584684 A JP26584684 A JP 26584684A JP H043114 B2 JPH043114 B2 JP H043114B2
Authority
JP
Japan
Prior art keywords
thyristor
gate
electrostatic induction
region
anode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59265846A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61144066A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP59265846A priority Critical patent/JPS61144066A/ja
Publication of JPS61144066A publication Critical patent/JPS61144066A/ja
Publication of JPH043114B2 publication Critical patent/JPH043114B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors

Landscapes

  • Thyristors (AREA)
  • Light Receiving Elements (AREA)
JP59265846A 1984-12-17 1984-12-17 光トリガサイリスタ Granted JPS61144066A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59265846A JPS61144066A (ja) 1984-12-17 1984-12-17 光トリガサイリスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59265846A JPS61144066A (ja) 1984-12-17 1984-12-17 光トリガサイリスタ

Publications (2)

Publication Number Publication Date
JPS61144066A JPS61144066A (ja) 1986-07-01
JPH043114B2 true JPH043114B2 (enrdf_load_stackoverflow) 1992-01-22

Family

ID=17422879

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59265846A Granted JPS61144066A (ja) 1984-12-17 1984-12-17 光トリガサイリスタ

Country Status (1)

Country Link
JP (1) JPS61144066A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61198779A (ja) * 1985-02-28 1986-09-03 Res Dev Corp Of Japan 両面ゲ−ト静電誘導サイリスタ及びその製造方法

Also Published As

Publication number Publication date
JPS61144066A (ja) 1986-07-01

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