JPH0429974B2 - - Google Patents

Info

Publication number
JPH0429974B2
JPH0429974B2 JP58047454A JP4745483A JPH0429974B2 JP H0429974 B2 JPH0429974 B2 JP H0429974B2 JP 58047454 A JP58047454 A JP 58047454A JP 4745483 A JP4745483 A JP 4745483A JP H0429974 B2 JPH0429974 B2 JP H0429974B2
Authority
JP
Japan
Prior art keywords
reference electrode
ion
main surface
ion sensor
isfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58047454A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59171852A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP58047454A priority Critical patent/JPS59171852A/ja
Publication of JPS59171852A publication Critical patent/JPS59171852A/ja
Publication of JPH0429974B2 publication Critical patent/JPH0429974B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Molecular Biology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
JP58047454A 1983-03-22 1983-03-22 半導体イオンセンサ Granted JPS59171852A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58047454A JPS59171852A (ja) 1983-03-22 1983-03-22 半導体イオンセンサ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58047454A JPS59171852A (ja) 1983-03-22 1983-03-22 半導体イオンセンサ

Publications (2)

Publication Number Publication Date
JPS59171852A JPS59171852A (ja) 1984-09-28
JPH0429974B2 true JPH0429974B2 (pm) 1992-05-20

Family

ID=12775592

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58047454A Granted JPS59171852A (ja) 1983-03-22 1983-03-22 半導体イオンセンサ

Country Status (1)

Country Link
JP (1) JPS59171852A (pm)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS636350U (pm) * 1986-06-25 1988-01-16
US6134461A (en) * 1998-03-04 2000-10-17 E. Heller & Company Electrochemical analyte
CN114502952A (zh) * 2019-10-10 2022-05-13 国立大学法人香川大学 维管束汁液测量传感器

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56153247A (en) * 1980-04-28 1981-11-27 Kuraray Co Ltd Measuring circuit for ion sensor
JPS57191540A (en) * 1981-05-21 1982-11-25 Nec Corp Semiconductor field effect type ion sensor
JPH0416546Y2 (pm) * 1988-09-13 1992-04-14

Also Published As

Publication number Publication date
JPS59171852A (ja) 1984-09-28

Similar Documents

Publication Publication Date Title
US4508613A (en) Miniaturized potassium ion sensor
US4354308A (en) Method for manufacture of a selective chemical sensitive FET transducer
JPS5870155A (ja) イオンに応答する半導体装置
US20050156584A1 (en) Ion sensitive field effect transistor (ISFET) sensor with improved gate configuration
CN107064255A (zh) 一种基于CMOS工艺的复合电极式pH传感器及其制备方法
JPH0429974B2 (pm)
JP3167022B2 (ja) ガスセンサ
JPH0469338B2 (pm)
JPS5948646A (ja) 半導体電荷センサ
JPH03131749A (ja) 水素ガスセンサ
US8410530B2 (en) Sensitive field effect transistor apparatus
JPH0241581Y2 (pm)
JPS60209162A (ja) 化学感応電界効果トランジスタおよびその製造方法
TWI342392B (en) Ph-ion selective field effect transistor (ph-isfet) with a miniaturized silver chloride reference electrode
JP2000187016A (ja) 半導体イオンセンサ
JPS62110145A (ja) 環境検知装置及びその製造方法
JPS59142452A (ja) イオンセンサ
JPS59142453A (ja) イオンセンサ
JPS60202347A (ja) 電界効果型半導体センサ
JP2988020B2 (ja) 半導体イオンセンサ
JPH0315974B2 (pm)
JPH01219659A (ja) 溶液成分センサー
JP2999522B2 (ja) イオンセンサ
JPS62250353A (ja) 半導体化学センサ
JPS585245Y2 (ja) イオンセンサ用電界効果トランジスタ