JPH0429638B2 - - Google Patents

Info

Publication number
JPH0429638B2
JPH0429638B2 JP59078487A JP7848784A JPH0429638B2 JP H0429638 B2 JPH0429638 B2 JP H0429638B2 JP 59078487 A JP59078487 A JP 59078487A JP 7848784 A JP7848784 A JP 7848784A JP H0429638 B2 JPH0429638 B2 JP H0429638B2
Authority
JP
Japan
Prior art keywords
raw material
lanthanum hexaboride
single crystal
growing
lab
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59078487A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60226495A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP59078487A priority Critical patent/JPS60226495A/ja
Publication of JPS60226495A publication Critical patent/JPS60226495A/ja
Publication of JPH0429638B2 publication Critical patent/JPH0429638B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP59078487A 1984-04-20 1984-04-20 六硼化ランタン単結晶の育成方法 Granted JPS60226495A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59078487A JPS60226495A (ja) 1984-04-20 1984-04-20 六硼化ランタン単結晶の育成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59078487A JPS60226495A (ja) 1984-04-20 1984-04-20 六硼化ランタン単結晶の育成方法

Publications (2)

Publication Number Publication Date
JPS60226495A JPS60226495A (ja) 1985-11-11
JPH0429638B2 true JPH0429638B2 (enrdf_load_stackoverflow) 1992-05-19

Family

ID=13663333

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59078487A Granted JPS60226495A (ja) 1984-04-20 1984-04-20 六硼化ランタン単結晶の育成方法

Country Status (1)

Country Link
JP (1) JPS60226495A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07100640B2 (ja) * 1988-03-04 1995-11-01 宇部興産株式会社 単結晶の製造法
CN108048907B (zh) * 2017-12-14 2020-08-07 合肥工业大学 一种大尺寸、高性能六硼化镧单晶的制备方法
CN114908422B (zh) * 2022-06-29 2024-06-14 合肥工业大学 锶掺杂六硼化镧单晶及其制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5310481Y2 (enrdf_load_stackoverflow) * 1971-05-18 1978-03-20
JPS56145197A (en) * 1980-04-09 1981-11-11 Nec Corp Growing method of single crystal by floating-zone method
JPS5852958A (ja) * 1981-09-25 1983-03-29 松下冷機株式会社 冷凍装置

Also Published As

Publication number Publication date
JPS60226495A (ja) 1985-11-11

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