JPS56145197A - Growing method of single crystal by floating-zone method - Google Patents

Growing method of single crystal by floating-zone method

Info

Publication number
JPS56145197A
JPS56145197A JP4667680A JP4667680A JPS56145197A JP S56145197 A JPS56145197 A JP S56145197A JP 4667680 A JP4667680 A JP 4667680A JP 4667680 A JP4667680 A JP 4667680A JP S56145197 A JPS56145197 A JP S56145197A
Authority
JP
Japan
Prior art keywords
melt
burners
single crystal
rod
floating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4667680A
Other languages
Japanese (ja)
Inventor
Kenichi Shiraki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4667680A priority Critical patent/JPS56145197A/en
Publication of JPS56145197A publication Critical patent/JPS56145197A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: A high-temperature fluid is jetted upward from the lower side of the melt formed on the raw material rod to the melt, thus improving the crystallinity of the single crystal made by the floating-zone method.
CONSTITUTION: A sintered alumina rod 1, a raw material of sapphire, is made to rotate in the arrow direction and single crystal already formed 2 is made to rotate in the opposite direction. Oxyhydrogen burners 4 are arranged around the center shaft of the crystal of the sintered alumina rod 1 and hydrogen is fed to the inner pipe and oxygen is fed to the outer pipe in the burners. The burners are inclined by an angle, e.g., 30° from the perpendicular plane to the rod and nozzles are directed upward. The flames 5 jetted from the burners 4 upward reach near the melt 3 at almost the same angle to support the melt so as to keep the same diameter by the flame pressure even when the melt would swell out over the outer diameter.
COPYRIGHT: (C)1981,JPO&Japio
JP4667680A 1980-04-09 1980-04-09 Growing method of single crystal by floating-zone method Pending JPS56145197A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4667680A JPS56145197A (en) 1980-04-09 1980-04-09 Growing method of single crystal by floating-zone method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4667680A JPS56145197A (en) 1980-04-09 1980-04-09 Growing method of single crystal by floating-zone method

Publications (1)

Publication Number Publication Date
JPS56145197A true JPS56145197A (en) 1981-11-11

Family

ID=12753969

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4667680A Pending JPS56145197A (en) 1980-04-09 1980-04-09 Growing method of single crystal by floating-zone method

Country Status (1)

Country Link
JP (1) JPS56145197A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60226495A (en) * 1984-04-20 1985-11-11 Hitachi Ltd Method of allowing lanthanum hexaboride single crystal to grow

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60226495A (en) * 1984-04-20 1985-11-11 Hitachi Ltd Method of allowing lanthanum hexaboride single crystal to grow
JPH0429638B2 (en) * 1984-04-20 1992-05-19

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