JPH0427703B2 - - Google Patents

Info

Publication number
JPH0427703B2
JPH0427703B2 JP57138684A JP13868482A JPH0427703B2 JP H0427703 B2 JPH0427703 B2 JP H0427703B2 JP 57138684 A JP57138684 A JP 57138684A JP 13868482 A JP13868482 A JP 13868482A JP H0427703 B2 JPH0427703 B2 JP H0427703B2
Authority
JP
Japan
Prior art keywords
film
etching
insulating film
sio
fluid material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57138684A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5928358A (ja
Inventor
Katsuhiko Hieda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57138684A priority Critical patent/JPS5928358A/ja
Publication of JPS5928358A publication Critical patent/JPS5928358A/ja
Publication of JPH0427703B2 publication Critical patent/JPH0427703B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0148—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations comprising introducing impurities in side walls or bottom walls of trenches, e.g. for forming channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations

Landscapes

  • Element Separation (AREA)
  • Weting (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Drying Of Semiconductors (AREA)
JP57138684A 1982-08-10 1982-08-10 半導体装置の製造方法 Granted JPS5928358A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57138684A JPS5928358A (ja) 1982-08-10 1982-08-10 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57138684A JPS5928358A (ja) 1982-08-10 1982-08-10 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5928358A JPS5928358A (ja) 1984-02-15
JPH0427703B2 true JPH0427703B2 (enExample) 1992-05-12

Family

ID=15227684

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57138684A Granted JPS5928358A (ja) 1982-08-10 1982-08-10 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5928358A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5984548A (ja) * 1982-11-08 1984-05-16 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法
JPH0738383B2 (ja) * 1984-10-29 1995-04-26 日本電信電話株式会社 半導体装置の製造方法
JPS6224627A (ja) * 1985-07-25 1987-02-02 Sony Corp ドライエツチング方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5363871A (en) * 1976-11-18 1978-06-07 Matsushita Electric Ind Co Ltd Production of semiconductor device
JPS5791537A (en) * 1980-11-29 1982-06-07 Toshiba Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS5928358A (ja) 1984-02-15

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