JPH0427692B2 - - Google Patents

Info

Publication number
JPH0427692B2
JPH0427692B2 JP19785181A JP19785181A JPH0427692B2 JP H0427692 B2 JPH0427692 B2 JP H0427692B2 JP 19785181 A JP19785181 A JP 19785181A JP 19785181 A JP19785181 A JP 19785181A JP H0427692 B2 JPH0427692 B2 JP H0427692B2
Authority
JP
Japan
Prior art keywords
oxide film
silicon
silicon oxide
element isolation
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP19785181A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5898935A (ja
Inventor
Kohei Higuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP19785181A priority Critical patent/JPS5898935A/ja
Publication of JPS5898935A publication Critical patent/JPS5898935A/ja
Publication of JPH0427692B2 publication Critical patent/JPH0427692B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
JP19785181A 1981-12-09 1981-12-09 半導体装置の製造方法 Granted JPS5898935A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19785181A JPS5898935A (ja) 1981-12-09 1981-12-09 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19785181A JPS5898935A (ja) 1981-12-09 1981-12-09 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5898935A JPS5898935A (ja) 1983-06-13
JPH0427692B2 true JPH0427692B2 (enrdf_load_stackoverflow) 1992-05-12

Family

ID=16381387

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19785181A Granted JPS5898935A (ja) 1981-12-09 1981-12-09 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5898935A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS5898935A (ja) 1983-06-13

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