JPH0427638B2 - - Google Patents

Info

Publication number
JPH0427638B2
JPH0427638B2 JP62081094A JP8109487A JPH0427638B2 JP H0427638 B2 JPH0427638 B2 JP H0427638B2 JP 62081094 A JP62081094 A JP 62081094A JP 8109487 A JP8109487 A JP 8109487A JP H0427638 B2 JPH0427638 B2 JP H0427638B2
Authority
JP
Japan
Prior art keywords
column
line
mos transistor
row
address data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62081094A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63302495A (ja
Inventor
Hiroshi Iwahashi
Masamichi Asano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP62081094A priority Critical patent/JPS63302495A/ja
Publication of JPS63302495A publication Critical patent/JPS63302495A/ja
Publication of JPH0427638B2 publication Critical patent/JPH0427638B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Read Only Memory (AREA)
JP62081094A 1987-04-03 1987-04-03 半導体メモリ装置 Granted JPS63302495A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62081094A JPS63302495A (ja) 1987-04-03 1987-04-03 半導体メモリ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62081094A JPS63302495A (ja) 1987-04-03 1987-04-03 半導体メモリ装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP55041569A Division JPS6027118B2 (ja) 1980-03-31 1980-03-31 半導体メモリ装置

Publications (2)

Publication Number Publication Date
JPS63302495A JPS63302495A (ja) 1988-12-09
JPH0427638B2 true JPH0427638B2 (enExample) 1992-05-12

Family

ID=13736801

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62081094A Granted JPS63302495A (ja) 1987-04-03 1987-04-03 半導体メモリ装置

Country Status (1)

Country Link
JP (1) JPS63302495A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10431265B2 (en) * 2017-03-23 2019-10-01 Silicon Storage Technology, Inc. Address fault detection in a flash memory system

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5263637A (en) * 1975-11-20 1977-05-26 Toshiba Corp Device for non-volatile semiconductor memory
US4151603A (en) * 1977-10-31 1979-04-24 International Business Machines Corporation Precharged FET ROS array
JPS54136239A (en) * 1978-04-14 1979-10-23 Nec Corp Integrated circuit

Also Published As

Publication number Publication date
JPS63302495A (ja) 1988-12-09

Similar Documents

Publication Publication Date Title
US4783764A (en) Semiconductor integrated circuit device with built-in memories, and peripheral circuit which may be statically or dynamically operated
US4760561A (en) MOS static type RAM having a variable load
EP0616334B1 (en) Non-volatile semiconductor memory device having floating gate
JPH0143400B2 (enExample)
US6744680B2 (en) Semiconductor device realized by using partial SOI technology
KR940007726B1 (ko) 다이나믹 랜덤억세스 메모리장치
JPS6027118B2 (ja) 半導体メモリ装置
JPH0766675B2 (ja) プログラマブルrom
JP3544933B2 (ja) 半導体集積回路
JPS59121694A (ja) 電力散逸を減少させたmosランダムアクセスメモリ用の交差結合型トランジスタメモリセル
JPS6245182A (ja) 半導体記憶装置
JPH0427638B2 (enExample)
US5327392A (en) Semiconductor integrated circuit capable of preventing occurrence of erroneous operation due to noise
EP0377841B1 (en) Semiconductor integrated circuit capable of preventing occurrence of erroneous operation due to noise
JP3047659B2 (ja) 半導体集積回路
JPS60226095A (ja) 半導体記憶装置
US6353560B1 (en) Semiconductor memory device
JPH0516119B2 (enExample)
JP2937592B2 (ja) 基板バイアス発生回路
EP0102485A2 (en) Semiconductor memory
JPH05120881A (ja) 半導体記憶装置
JPS5913117B2 (ja) 半導体メモリ
JPH0715798B2 (ja) 半導体記憶装置
JP2783023B2 (ja) 半導体スタティックメモリ
JPS5938674B2 (ja) 記憶装置