JPH0425715B2 - - Google Patents

Info

Publication number
JPH0425715B2
JPH0425715B2 JP57153896A JP15389682A JPH0425715B2 JP H0425715 B2 JPH0425715 B2 JP H0425715B2 JP 57153896 A JP57153896 A JP 57153896A JP 15389682 A JP15389682 A JP 15389682A JP H0425715 B2 JPH0425715 B2 JP H0425715B2
Authority
JP
Japan
Prior art keywords
copper
wiring
chromium
zirconium
alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57153896A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5943570A (ja
Inventor
Kenji Hinode
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57153896A priority Critical patent/JPS5943570A/ja
Publication of JPS5943570A publication Critical patent/JPS5943570A/ja
Publication of JPH0425715B2 publication Critical patent/JPH0425715B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Landscapes

  • Conductive Materials (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP57153896A 1982-09-06 1982-09-06 薄膜配線 Granted JPS5943570A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57153896A JPS5943570A (ja) 1982-09-06 1982-09-06 薄膜配線

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57153896A JPS5943570A (ja) 1982-09-06 1982-09-06 薄膜配線

Publications (2)

Publication Number Publication Date
JPS5943570A JPS5943570A (ja) 1984-03-10
JPH0425715B2 true JPH0425715B2 (enrdf_load_stackoverflow) 1992-05-01

Family

ID=15572474

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57153896A Granted JPS5943570A (ja) 1982-09-06 1982-09-06 薄膜配線

Country Status (1)

Country Link
JP (1) JPS5943570A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2511289B2 (ja) * 1988-03-30 1996-06-26 株式会社日立製作所 半導体装置
JPH0262035A (ja) * 1988-08-29 1990-03-01 Nippon Telegr & Teleph Corp <Ntt> 半導体装置
US5243222A (en) * 1991-04-05 1993-09-07 International Business Machines Corporation Copper alloy metallurgies for VLSI interconnection structures
JP4423379B2 (ja) 2008-03-25 2010-03-03 合同会社先端配線材料研究所 銅配線、半導体装置および銅配線の形成方法

Also Published As

Publication number Publication date
JPS5943570A (ja) 1984-03-10

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