JPH0425715B2 - - Google Patents
Info
- Publication number
- JPH0425715B2 JPH0425715B2 JP15389682A JP15389682A JPH0425715B2 JP H0425715 B2 JPH0425715 B2 JP H0425715B2 JP 15389682 A JP15389682 A JP 15389682A JP 15389682 A JP15389682 A JP 15389682A JP H0425715 B2 JPH0425715 B2 JP H0425715B2
- Authority
- JP
- Japan
- Prior art keywords
- copper
- wiring
- chromium
- zirconium
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052802 copper Inorganic materials 0.000 claims description 16
- 239000010949 copper Substances 0.000 claims description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 15
- 229910052726 zirconium Inorganic materials 0.000 claims description 10
- 229910052804 chromium Inorganic materials 0.000 claims description 9
- 239000011651 chromium Substances 0.000 claims description 9
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 description 7
- 230000005012 migration Effects 0.000 description 6
- 238000013508 migration Methods 0.000 description 6
- 229910000599 Cr alloy Inorganic materials 0.000 description 5
- 239000000788 chromium alloy Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 229910000881 Cu alloy Inorganic materials 0.000 description 4
- GXDVEXJTVGRLNW-UHFFFAOYSA-N [Cr].[Cu] Chemical compound [Cr].[Cu] GXDVEXJTVGRLNW-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000005275 alloying Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910001093 Zr alloy Inorganic materials 0.000 description 2
- XTYUEDCPRIMJNG-UHFFFAOYSA-N copper zirconium Chemical compound [Cu].[Zr] XTYUEDCPRIMJNG-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、半導体素子、特にバイポーラ集積回
路素子、およびバブル磁区素子表面弾性波素子等
の高電流密度用に適した薄膜配線に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to thin film interconnects suitable for high current densities such as semiconductor devices, particularly bipolar integrated circuit devices, and bubble domain devices and surface acoustic wave devices.
現在、バイポーラ集積回路素子では、高電流密
度用の配線材料としてアルミニウム・銅合金が用
いられている。この材料に流し得る最高電流密度
は３×105A／cm2程度であり、電流密度は現在既
にこのレベルに達しており、アルミニウム・銅合
金では将来の高集積化に耐えない。また、高集積
化のための微細化は配線および電極断面積の減少
を招く。現在のアルミニウム合金を使う限り配線
抵抗が増し、信号遅延、電圧降下、ジユール発熱
等の問題が、高集積化の障害となる。したがつ
て、より低い電気抵抗率を有す材料の開発が必要
である。
Currently, aluminum-copper alloys are used as wiring materials for high current densities in bipolar integrated circuit devices. The maximum current density that can be passed through this material is about 3×10 5 A/cm 2 , and the current density has already reached this level, and aluminum-copper alloys will not be able to withstand future high integration. Furthermore, miniaturization for higher integration results in a reduction in the cross-sectional area of wiring and electrodes. As long as current aluminum alloys are used, wiring resistance increases, and problems such as signal delay, voltage drop, and heat generation become obstacles to high integration. Therefore, there is a need to develop materials with lower electrical resistivity.
本発明は、高い電流密度下（たとえば×
106A／cm2以上）での通電に耐えると同時に、現
在用いられているアルミニウム・銅合金よりも低
い電気抵抗率を有する材料を提供することを目的
とする。
The present invention can be applied under high current density (e.g. ×
The purpose of the present invention is to provide a material that can withstand current flow (10 6 A/cm 2 or higher) and at the same time has a lower electrical resistivity than currently used aluminum-copper alloys.
電流密度の制限はエレクトロマイグレーシヨン
による劣化によつて決まる。耐マイグレーシヨン
性を増すために、金属の種類を変えること、合金
化等の方法がとられる。タングステンモリブデン
等の高融点合属は非常に高い耐マイグレーシヨン
性を有するが、電気抵抗率がアルミニウムの２〜
３倍以上（薄膜）であり、現在の目的には適さな
い。アルミニウムより低抵抗の材料として、金、
銀、銅がある。この中では銅価格の面で有利であ
るが、純銅では、耐マイグレーシヨン性が必ずし
も十分でない。F.M.d′Heurleらのデータ（Thin
Solid Films25（1975）PP.531−544）から判断
すると３×106A／cm2程度が限度と思われる。こ
れ以上の電流密度で使うために合金化によつて耐
マイグレーシヨン性を改善する。上記の文献では
銅・ベリリウム系が有効なことを示しているが、
この系は電気抵抗率が高く有効でない。抵抗率が
それほど悪化せずに耐マイグレーシヨン性を改善
できるものとして、銅・クロム、銅・ジルコニウ
ム系がある。これらの系でも電気抵抗率がアルミ
ニウム以下であるためにはクロム、ジルコニウム
の添加量に制限があり、それぞれ、約２重量％ク
ロム、１重量％ジルコニウムとなる。
Current density limitations are determined by electromigration degradation. In order to increase migration resistance, methods such as changing the type of metal and alloying are used. High melting point alloys such as tungsten molybdenum have extremely high migration resistance, but their electrical resistivity is 2 to 2 that of aluminum.
It is more than 3 times as large (thin film) and is not suitable for current purposes. Gold, as a material with lower resistance than aluminum,
There is silver and copper. Among these, copper is advantageous in terms of price, but pure copper does not necessarily have sufficient migration resistance. Data from FMd′Heurle et al. (Thin
Judging from Solid Films 25 (1975) PP.531-544), the limit seems to be about 3×10 6 A/cm 2 . For use at higher current densities, migration resistance is improved by alloying. The above literature shows that copper/beryllium type is effective, but
This system has high electrical resistivity and is not effective. Copper/chromium and copper/zirconium based materials can improve migration resistance without significantly deteriorating resistivity. Even in these systems, in order for the electrical resistivity to be lower than aluminum, there is a limit to the amounts of chromium and zirconium added, which are approximately 2% by weight chromium and 1% by weight zirconium, respectively.
以下、本発明を実施例を参照して詳細に説明す
る。
Hereinafter, the present invention will be explained in detail with reference to Examples.
実施例 １
銅・クロム合金の薄膜配線を以下のようにして
作製した。シリコン基板を熱酸化して表面に
0.2μｍ厚のシリコン酸化膜層を形成する。銅の
シリコン酸化膜への付着力は弱いので、接着層と
してクロムを約50nｍ蒸着する。真空を破るこ
となく、引き続いて銅・0.6重量％クロム合金を
0.5μｍ蒸着する。通常のフオトエツチング法に
より、配線パターンを形成する。400〜500℃で
焼鈍する。これは蒸着時の基板温度が150℃程度
であるため、蒸着膜中に形成された多数の格子欠
陥を除去し、抵抗値を下げるためである。Example 1 A copper-chromium alloy thin film wiring was produced as follows. Thermal oxidation of silicon substrate to the surface
A silicon oxide film layer with a thickness of 0.2 μm is formed. Since the adhesion of copper to the silicon oxide film is weak, chromium is deposited to a thickness of about 50 nm as an adhesive layer. Copper and 0.6 wt% chromium alloy were subsequently added without breaking the vacuum.
Deposit 0.5 μm. A wiring pattern is formed by a normal photoetching method. Anneal at 400-500℃. This is because the substrate temperature during vapor deposition is about 150° C., so many lattice defects formed in the vapor deposited film are removed and the resistance value is lowered.
このようにして作製した配線に300℃、３×
106A／cm2の条件で通電し、同時に作製した純銅
配線と比較した。断線までの時間（平均寿命）
は、幅3μｍ、長さ100μｍの配線で、850hであり、
配線幅が広いと、多少長くなる。この寿命は同条
件で通電試験した純銅の平均寿命70hの10倍程度
であつた。 The wiring produced in this way was heated to 300°C, 3×
Electricity was applied under the condition of 10 6 A/cm 2 and comparison was made with pure copper wiring fabricated at the same time. Time until disconnection (average life)
is a wiring with a width of 3 μm and a length of 100 μm, and is 850 h.
If the wiring width is wide, it will become a little longer. This lifespan was approximately 10 times the average lifespan of 70 hours for pure copper tested under the same conditions.
全く同様の手順で、銅クロム合金の代りに、銅
ジルコニウム合金（0.2重量％ジルコニウム）を
0.5μｍ厚に蒸着し、配線パターンを形成した。幅
3μｍ、長さ100μｍの配線に、300℃、３×106A／
cm2で通電し寿命を測定した。得られた平均寿命
は、650hで、実施例１の銅・クロム合金より多
少劣るものの、純銅に比較すれば約10倍の値であ
る。また、ZrおよびCrの含有量と寿命との関係
を求めると、第１図に示すように、ZrおよびCr
の含有量がそれぞれ、ほぼ0.02および0.05重量％
以上であればAlCuTa合金以上の寿命が得られる
ことがわかつた。 Using exactly the same procedure, copper zirconium alloy (0.2 wt% zirconium) was used instead of copper chromium alloy.
It was deposited to a thickness of 0.5 μm to form a wiring pattern. width
3×10 6 A/300℃ for 3μm, 100μm long wiring
The life was measured by applying current at cm2 . The obtained average life was 650 hours, which was somewhat inferior to the copper-chromium alloy of Example 1, but was about 10 times as long as pure copper. Furthermore, when determining the relationship between Zr and Cr content and lifespan, as shown in Figure 1, Zr and Cr
The content of approximately 0.02 and 0.05% by weight, respectively
It was found that if the lifespan is above that, a life longer than that of AlCuTa alloy can be obtained.
実施例 ２
実施例１に示した手順で作製した蒸着薄膜の電
気抵抗値を測定した。添加元素の濃度を変え、
銅・クロム合金では６種類、銅・ジルコニウム合
金では３種類の試料について、500℃×1hの焼鈍
後の電気抵抗率を求めた。第２図にその結果を示
す。純銅の電気抵抗率はバルク値に比べ、１割程
度大きい。合金元素を添加すると、濃度増加に伴
つて電気抵抗率も増加し、濃度と電気抵抗率との
間には、第２図に示すような直線関係がある。同
濃度で比較すると、ジルコニウムではクロムの２
倍程度の電気抵抗率の増加がある。第２図から明
らかなように、クロムでは８重量％、ジルコニウ
ムでは４重量％をそれぞれ銅に添加した合金薄膜
はいずれも、Cu合金よりもはるかにエレクトロ
マイグレーシヨン性のすぐれたＷ、Mo膜以下の
電気抵抗を有し、実用に供することができる。Example 2 The electrical resistance value of the vapor-deposited thin film produced by the procedure shown in Example 1 was measured. By changing the concentration of added elements,
The electrical resistivity of six types of copper-chromium alloy samples and three types of copper-zirconium alloy samples were determined after annealing at 500°C for 1 hour. Figure 2 shows the results. The electrical resistivity of pure copper is about 10% higher than its bulk value. When an alloying element is added, the electrical resistivity increases as the concentration increases, and there is a linear relationship between the concentration and the electrical resistivity as shown in FIG. Comparing the same concentration, zirconium has 2
There is an increase in electrical resistivity of about twice as much. As is clear from Figure 2, the alloy thin films in which 8% by weight of chromium and 4% by weight of zirconium are added to copper each have a much better electromigration property than the Cu alloy, compared to the W and Mo films. It has an electrical resistance of , and can be put to practical use.
以上説明したごとく、本発明によれば、銅にほ
ぼ0.05〜８重量％のクロム、ほぼ0.02〜４重量％
のジルコニウムを加えた合金は、Ｗ、Moより低
抵抗で、かつ現在最も耐性のあるAl合金（Al、
Cu、Ta）よりも優れた耐マイグレーシヨン性を
有する。従つて高電流密度用の電極配線材料とし
て有用である。
As explained above, according to the present invention, copper contains approximately 0.05 to 8% chromium and approximately 0.02 to 4% by weight.
The alloy containing zirconium has lower resistance than W and Mo, and is currently the most resistant Al alloy (Al,
It has better migration resistance than Cu, Ta). Therefore, it is useful as an electrode wiring material for high current density.
第１図および第２図はそれぞれ本発明の効果を
示す曲線図である。
FIGS. 1 and 2 are curve diagrams showing the effects of the present invention, respectively.
Claims (1)
ニウムほぼ0.02〜４重量％を含む銅の薄膜からな
る薄膜配線。1. Thin film wiring consisting of a copper thin film containing approximately 0.05 to 8% by weight of chromium or approximately 0.02 to 4% by weight of zirconium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15389682A JPS5943570A (en) | 1982-09-06 | 1982-09-06 | Thin film wiring electrode material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15389682A JPS5943570A (en) | 1982-09-06 | 1982-09-06 | Thin film wiring electrode material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5943570A JPS5943570A (en) | 1984-03-10 |
| JPH0425715B2 true JPH0425715B2 (en) | 1992-05-01 |
Family
ID=15572474
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15389682A Granted JPS5943570A (en) | 1982-09-06 | 1982-09-06 | Thin film wiring electrode material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5943570A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2511289B2 (en) * | 1988-03-30 | 1996-06-26 | 株式会社日立製作所 | Semiconductor device |
| JPH0262035A (en) * | 1988-08-29 | 1990-03-01 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
| US5243222A (en) * | 1991-04-05 | 1993-09-07 | International Business Machines Corporation | Copper alloy metallurgies for VLSI interconnection structures |
| JP4423379B2 (en) | 2008-03-25 | 2010-03-03 | 合同会社先端配線材料研究所 | Copper wiring, semiconductor device, and method of forming copper wiring |
-
1982
- 1982-09-06 JP JP15389682A patent/JPS5943570A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5943570A (en) | 1984-03-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3881884A (en) | Method for the formation of corrosion resistant electronic interconnections | |
| US4319264A (en) | Nickel-gold-nickel conductors for solid state devices | |
| US4372809A (en) | Method for manufacturing solderable, temperable, thin film tracks which do not contain precious metal | |
| JPH0582991B2 (en) | ||
| JPH0621140A (en) | Electronic device provided with metallurgy containing compound of copper and semiconductor | |
| US4166279A (en) | Electromigration resistance in gold thin film conductors | |
| US3617816A (en) | Composite metallurgy stripe for semiconductor devices | |
| US4268584A (en) | Nickel-X/gold/nickel-X conductors for solid state devices where X is phosphorus, boron, or carbon | |
| JPS59104184A (en) | Solar battery | |
| KR970005162B1 (en) | Improvements in or relating to high-tc superconducting units having low contact surface resistivity | |
| US5051812A (en) | Semiconductor device and method for manufacturing the same | |
| JPH0425715B2 (en) | ||
| Philofsky et al. | A review of the limitations of aluminum thin films on semiconductor devices | |
| US4615908A (en) | Method for the manufacture of plasma-polymer multilayer capacitors | |
| Morabito et al. | Material characterization of Ti-Cu-Ni-Au (TCNA)-a new low cost thin film conductor system | |
| JPH0262035A (en) | Semiconductor device | |
| JPH06236878A (en) | Metal wiring | |
| JPH08125203A (en) | Manufacture of cdte element | |
| JP2606547B2 (en) | Method for manufacturing semiconductor device | |
| JPH0140511B2 (en) | ||
| CA1153128A (en) | Electrical circuit assemblies | |
| JPS61184859A (en) | Silicon heat sink chip | |
| TWI733120B (en) | Thin film resistor | |
| JPS61144847A (en) | Semiconductor device and manufacture thereof | |
| JPS5936822B2 (en) | Pressure contact type semiconductor device |